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Vishay Siliconix SUD50N024-09P-E3 MOSFET N-CH 22V 49A TO252
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DigiKey	SUD50N024-09P-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SUD50N024-09P-T4E3
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Bristol Electronics	SUD50N024-09P-T4E3		17,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SUD50N024-09P-T4
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Bristol Electronics	SUD50N024-09P-T4		2,190			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SUD50N02409P Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SUD50N024-09P		Vishay Siliconix	MOSFETs		Original	PDF
SUD50N024-09P-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 22V 49A TO252		Original	PDF
SUD50N024-09P-E3		Vishay Telefunken			Original	PDF
SUD50N024-09P SPICE Device Model		Vishay	N-Channel 20-V (D-S) 175°C MOSFET		Original	PDF

SUD50N02409P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
AN609 Abstract: SUD50N024-09P Text: SUD50N024-09P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	SUD50N024-09P AN609 18-Sep-07	PDF
SUD50N024-09P Abstract: No abstract text available Text: SUD50N024-09P Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)d 0.0095 @ VGS = 10 V 49 0.017 @ VGS = 4.5 V 36 VDS (V) 24c D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency	Original	SUD50N024-09P O-252 SUD50N024-09P--E3 S-41168--Rev. 14-Jun-04 SUD50N024-09P	PDF
SUD50N024-09P Abstract: No abstract text available Text: SPICE Device Model SUD50N024-09P Vishay Siliconix N-Channel 20-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUD50N024-09P S-60543Rev. 10-Apr-06 SUD50N024-09P	PDF
STF12A80 Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer	Original	02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B	PDF
SUD50N024-09P Abstract: No abstract text available Text: SPICE Device Model SUD50N024-09P Vishay Siliconix N-Channel 20-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUD50N024-09P 18-Jul-08 SUD50N024-09P	PDF
q406 transistor Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no	Original	SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS	PDF
41168 Abstract: VISHAY 34D SUD50N02409P Text: SUD50N024-09P Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)d 0.0095 @ VGS = 10 V 49 0.017 @ VGS = 4.5 V 36 VDS (V) 24c D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency	Original	SUD50N024-09P O-252 SUD50N024-09P SUD50N024-09P--E3 08-Apr-05 41168 VISHAY 34D SUD50N02409P	PDF
Untitled Abstract: No abstract text available Text: SUD50N024-09P New Product Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)d 0.0095 @ VGS = 10 V 49 0.017 @ VGS = 4.5 V 36 VDS (V) 24c D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency	Original	SUD50N024-09P O-252 SUD50N024-09P S-31399--Rev. 30-Jun-03	PDF
sud50n025-06p Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud50n025-09p SI2301ADS SI4732CY si9110 Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m	Original	VSA-SG0019-0310 sud50n025-06p SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud50n025-09p SI2301ADS SI4732CY si9110	PDF
SUD50N024-09P Abstract: 34DL Text: SUD50N024-09P Vishay Siliconix N-Channel 22-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)d 0.0095 @ VGS = 10 V 49 0.017 @ VGS = 4.5 V 36 VDS (V) 24c D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency	Original	SUD50N024-09P O-252 SUD50N024-09P--E3 18-Jul-08 SUD50N024-09P 34DL	PDF
SUD50N024-09P Abstract: *50N024 Text: SPICE Device Model SUD50N024-09P Vishay Siliconix N-Channel 20-V D-S 175°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUD50N024-09P 0-to10V 01-Aug-03 SUD50N024-09P *50N024	PDF