SUP60N10-18P
Abstract: No abstract text available
Text: SPICE Device Model SUP60N10-18P Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the
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SUP60N10-18P
18-Jul-08
SUP60N10-18P
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27332
Abstract: AN609 SUP60N10-16L
Text: SUP60N10-16L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SUP60N10-16L
AN609
19-Dec-07
27332
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sup60n10
Abstract: 50V 60A MOSFET SUP60N10-16L
Text: SPICE Device Model SUP60N10-16L Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP60N10-16L
0-to-10V
17-Nov-03
sup60n10
50V 60A MOSFET
SUP60N10-16L
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Untitled
Abstract: No abstract text available
Text: SUP60N10-18P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.0183 at VGS = 10 V 60 0.023 at VGS = 8.0 V 53 Qg (Typ.) 48 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
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SUP60N10-18P
2002/95/EC
O-220AB
SUP60N10-18P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUP60N10-18P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.0183 at VGS = 10 V 60 0.023 at VGS = 8.0 V 53 Qg (Typ.) 48 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
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SUP60N10-18P
2002/95/EC
O-220AB
SUP60N10-18P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUP60N10-18P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.0183 at VGS = 10 V 60 0.023 at VGS = 8.0 V 53 Qg (Typ.) 48 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
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SUP60N10-18P
2002/95/EC
O-220AB
SUP60N10-18P-E3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SUP60N10-18P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.0183 at VGS = 10 V 60 0.023 at VGS = 8.0 V 53 Qg (Typ.) 48 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
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SUP60N10-18P
2002/95/EC
O-220AB
SUP60N10-18P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SUP60N10-16L
Abstract: No abstract text available
Text: SUP60N10-16L Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 60 0.018 @ VGS = 4.5 V 56 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized APPLICATIONS D DC/DC Primary Side Switch
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SUP60N10-16L
O-220AB
60lectual
18-Jul-08
SUP60N10-16L
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SUP60N10-16L
Abstract: No abstract text available
Text: SPICE Device Model SUP60N10-16L Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP60N10-16L
18-Jul-08
SUP60N10-16L
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AN609
Abstract: SUP60N10-18P
Text: SUP60N10-18P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SUP60N10-18P
AN609,
04-Jan-10
AN609
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A6053
Abstract: No abstract text available
Text: SUP60N10-18P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.0183 at VGS = 10 V 60 0.023 at VGS = 8.0 V 53 Qg (Typ.) 48 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
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SUP60N10-18P
2002/95/EC
O-220AB
SUP60N10-18P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
A6053
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PDF
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71928
Abstract: No abstract text available
Text: SUP60N10-16L New Product Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 60 0.018 @ VGS = 4.5 V 56 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized APPLICATIONS
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SUP60N10-16L
O-220AB
S-21262--Rev.
05-Aug-02
71928
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SUP60N10-16L
Abstract: No abstract text available
Text: SUP60N10-16L Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 60 0.018 @ VGS = 4.5 V 56 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized APPLICATIONS D DC/DC Primary Side Switch
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SUP60N10-16L
O-220AB
08-Apr-05
SUP60N10-16L
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUP60N10-16L www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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SUP60N10-16L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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sup60n10
Abstract: SUP60N10-16L
Text: SUP60N10-16L Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 60 0.018 @ VGS = 4.5 V 56 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized APPLICATIONS D DC/DC Primary Side Switch
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SUP60N10-16L
O-220AB
60ture
S-03600--Rev.
31-Mar-03
sup60n10
SUP60N10-16L
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SUP60N10-16L
Abstract: No abstract text available
Text: SPICE Device Model SUP60N10-16L Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP60N10-16L
S-71515Rev.
23-Jul-07
SUP60N10-16L
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Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM
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CY8C38
CY8C29
incl795
12T9797
12T9804
12T9803
12T9800
12T9802
12T9801
12T9805
Arduino Mega2560
13001 S 6D TRANSISTOR
arduino uno rev 3
agilent optical encoder 9988
MZ 13001 TRANSISTOR
arduino mega 2650
skiip 613 gb 123 ct
arduino sound sensor module pic
arduino nano
mc34063l
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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sum45n25
Abstract: PPAP PPAP for thermistor 0034D sud*45N05-20L SQ7414EN ceramic disc aec capacitors siliconix an80 SUP57N20-33 SUP75N06-08
Text: For Automotive Applications w w w. v i s h a y. c o m SELECTOR GuIdE Power MoSFeTs P O w E R M O S F E Ts V I S H AY I N T E R T E C H N O L O G Y, I N C . SeMICoNDUCTorS reCTIFIerS Schottky single, dual Standard, Fast, and ultra-Fast Recovery (single, dual)
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VMN-SG2117-0705
sum45n25
PPAP
PPAP for thermistor
0034D
sud*45N05-20L
SQ7414EN
ceramic disc aec capacitors
siliconix an80
SUP57N20-33
SUP75N06-08
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q406 transistor
Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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SiP41109
SiP41110
SiP41111
75/2A
q406 transistor
SI9120
equivalent Q406
q406
SUM65N20-30
Si3456BDV SPICE Device Model
sud*50n025
Si4304DY
0038 tsop
Si2325DS
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
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Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
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Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs
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Diod92
VMN-SG2127-0911
Diode SOT-23 marking 15d
SI4210
si4812b
SI-4102
SI7149DP
SiM400
si4932
si7135
SiB914
SI4477
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sud*50n025-06p
Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m
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VSA-SG0019-0310
sud*50n025-06p
SUD70N03-04P
SI9120
sum45n25
SI9119
Si7810DN
sud*50n025-09p
SI2301ADS
SI4732CY
si9110
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gs 069
Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
Text: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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SC-75
SC-75A
SC-89
gs 069
PowerPACK 1212-8
Si4946BEY
Si2314EDS
SI4430BDY
tsop6 marking 345
TN2404K
1206-8 chipfet layout
Si4630DY
SUM110N04-04
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