GVVZS3000-21A-2
Abstract: VVQ2000-51A-C10 SS5V1-W16SA1WD-06B-C6 EX500-AC000-S diode catalogue AS3000 SS5V1-16 GVVZS3000-21A-4 IEC529 turck 8 pin m12 connector
Text: 5 Port Solenoid Valve Series SV SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 1.1-1 New Concept Connector Type Manifold Series Series SV1000/2000/3000/4000 SV1000/2000/3000/4000 The use of multi-pin connectors to replace wiring inside manifold blocks provides
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SV1000/2000/3000/4000
30Vrms
UL1310,
UL1585
GVVZS3000-21A-2
VVQ2000-51A-C10
SS5V1-W16SA1WD-06B-C6
EX500-AC000-S
diode catalogue
AS3000
SS5V1-16
GVVZS3000-21A-4
IEC529
turck 8 pin m12 connector
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Untitled
Abstract: No abstract text available
Text: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)
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AG01A
AG01Y
AG01Z
FMB-29
FMB-29L
FMB-32
EL02Z
SFPB-66
SFPB-69
SFPB-72
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turck 8 pin m12 connector
Abstract: OMRON RM201 marking code A1W SMC ex250 AN203 MATSUSHITA MATSUA compressor wiring diagram frc100a solenoid valve 24v JIS-X-5101 eb142
Text: CAT.ES11-81 A 5 Port Solenoid Valve Series SV New Concept Connector Type Manifold Series Series SV1000/2000/3000/4000 SV1000/2000/3000/4000 The use of multi-pin connectors to replace wiring inside manifold blocks provides flexibility when adding stations or changing manifold configuration.
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ES11-81
SV1000/2000/3000/4000
turck 8 pin m12 connector
OMRON RM201
marking code A1W
SMC ex250
AN203 MATSUSHITA
MATSUA compressor wiring diagram
frc100a
solenoid valve 24v
JIS-X-5101
eb142
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EEX500-IB1-E8
Abstract: EX250 JIS-X-5101 connector 11 pin female lumberg EX500-IB1 GVVZS3000-21A-4 diode catalogue OMRON BF 302 VINCENT sv 236 EX120-SIB1
Text: CAT.ES11-81 A -UK 5 Port Solenoid Valve Series SV New Concept Connector Type Manifold Series Series SV1000/2000/3000/4000 SV1000/2000/3000/4000 The use of multi-pin connectors to replace wiring inside manifold blocks provides flexibility when adding stations or changing manifold configuration.
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ES11-81
SV1000/2000/3000/4000
EEX500-IB1-E8
EX250
JIS-X-5101
connector 11 pin female lumberg
EX500-IB1
GVVZS3000-21A-4
diode catalogue
OMRON BF 302
VINCENT sv 236
EX120-SIB1
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UX-F5B
Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Text: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100
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O-220F
RZ1030
RZ1040
RZ1055
RZ1065
RZ1100
RZ1125
RZ1150
UX-F5B
UX-F5B diode
RG-2A Diode
shv-30j
FMQ2FU
axial package
fmp2fur
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transistor ac51
Abstract: 8 PIN RELAY 24V dc pla MOSFET 1200v 30a 5.1 home theatre assembling SMCV6110 RC snubber thyristor design IGBT ac switch in SSR SKB 7 / 12 PLA relay SMCV6150
Text: Solid state relays celdu ¤ cr elais Scope Heating Plasturgy Furnaces Power supply distribution systems Air conditioning Textile Home heating Infrared heating Drying Thermoforming Etc. Motor starting Pumps Compressors Plasturgy see above Conveyors Fans
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sensor hall 95A
Abstract: 95A sensor hall 95A hall effect sensor D41A3100L hall current sensor 95A 5.1 home theatre assembling Celduc Relais 95A magnetic sensor HALL 95A HALL EFFECT SENSOR 95A
Text: www.celduc.com Selection Guide ED G E T H AT CO M P E TIVE TI PRO SOLID STATE RELAYS OU U D TO S E RV E Y MAGNETIC SENSORS . REED RELAYS AND SWITCHES elais Word of Introduction Dear Customers, dear Readers, T IV E ED Keep our customers satisfied !! This “selection guide” catalogue is a picture of the products that are available
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GUIDCR02
sensor hall 95A
95A sensor hall
95A hall effect sensor
D41A3100L
hall current sensor 95A
5.1 home theatre assembling
Celduc Relais
95A magnetic sensor
HALL 95A
HALL EFFECT SENSOR 95A
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SS5V1-10
Abstract: SV2000 L 2605 CV cv 2663 SS5V4-10 SV1000-59-2A cartridges SV2000-59-1A SV1000 SS5V2-10
Text: Base Mounted Solenoid Valve Series SV1/2/3/4000 5 Port Base mounted solenoid valve Series R SV1/2/3/4000 NRTL /C Features IP67 base mounted valves Easy to expand manifolds Dual 3 port valve bodies available Cassette and tie rod manifold construction Wide choice of serial transmission options
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SV1/2/3/4000
SV1000
SV2000
SV3000
SV4000
SV100-05-
SV100-06-
SV1300--.
SS5V1-10
SV2000
L 2605 CV
cv 2663
SS5V4-10
SV1000-59-2A
cartridges
SV2000-59-1A
SV1000
SS5V2-10
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SLD1324ZT
Abstract: 10w laser diode
Text: SLD1324ZT High-Power Density 1W Laser Diode For the availability of this product, please contact the sales office. Description The SLD1324ZT is a gain-guided, high-power laser diode with 1W red visible output. The flat package with built-in TE cooler is adopted and fine
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SLD1324ZT
SLD1324ZT
M-272
10w laser diode
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B 2306 BARRIER RECTIFIER
Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Text: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41
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VR-60SS
VR-61SS
B 2306 BARRIER RECTIFIER
diode RU 3B
FMQ2FU
RBV-406
UX-F5B
w 2206 schottky
fmv -30j
EZ0150
fmu 22 u
FMP-3FU
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95A sensor hall
Abstract: celduc d31c2110 d31c2110 sensor hall 95A HALL 95A D41A3100L 95A magnetic sensor IGBT ac switch in SSR swt kw 11 7 1 16a 250vac ac SYNCHRONOUS MOTOR WIRING
Text: Selection Guide REED RELAYS AND SWITCHES MAGNETIC SENSORS SOLID STATE RELAYS IV E ED We are pleased to present the third version of our short form catalogue. The last 3 years have seen a dramatic growth in customers in a diverse range of industries, allowing us to demonstrate high quality, innovative design techniques incorporated in many of the new products shown in this catalogue.
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diode 8603
Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Text: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41
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VR-60SS
VR-61SS
diode 8603
SOT23 1Z
FMV-3HU
RM2C
RN4Z
General FBT
UX-F5B
3gu diode
diode RBV-406M
Part marking
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SE135N
Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
Text: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1488
2SA1492
SE135N
SE110N
UX-C2B
SE140N
STR83159
SE130N
STR2012
Transistor AC 51
SE140
SE115N
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sv 4a diode
Abstract: 2SD870 equivalent LG08A 2SD870
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD870 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES: • High Voltage : V c b o =1500V • Low Saturation Voltage : VCE sat =SV (Max -) (Ic=4A, Ib =0.8A) • High Speed ; tf=1.0ps (Max.) (ICp=4A, Ifil(end)=0.8A) • Built-in Damper Type.
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2SD870
-65VL50
AC42C
200mA,
sv 4a diode
2SD870 equivalent
LG08A
2SD870
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SHINDENGEN DIODE
Abstract: SF10SC3L
Text: '> 3 h + A ' <J T # - f ^ — K 7 Schottky Barrier Diode 7 S Twin Diode OUTLINE DIMENSIONS SF10SC3L 30 V 10A •T j I 50C •<SV = 0 .45 V ♦ P rh s m y i X z ? y ' j T s u • ,« » » Œ 2 K V « li ffl i * •S R S S •D C /D C D > A '-5 ’ • * « . y - A . 0 A«g§
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SF10SC3L
SHINDENGEN DIODE
SF10SC3L
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4SB60L
Abstract: No abstract text available
Text: W y v S W -K fty -rx s K ^ Single In-line Package Bridoe Diode Low Noise type O U TL IN E DIM ENSIONS D4SBL 600V 4A • Æ fè * RATINGS A b so lu te Maximum R a tin g s « Item m I te ^ Ä, Æ Symbol C o n d it L s - - aa -I ^
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50HzIE?
4SB60L
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Untitled
Abstract: No abstract text available
Text: interrii RFP4N05, RFP4N06 J u n e 1999 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs T h e s e are N -C h a n n e l e n h a n ce m e n t m o d e s ilico n g ate F ile N u m b e r 2 8 8 0 .2 Features * 4A, 5 0 V and 60V * rDS ON = 0 .8 0 0 Q pow er field effect tran sisto rs d e s ig n e d for a p p lica tio n s such
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RFP4N05,
RFP4N06
RFP4N06
AN7254
AN7260
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HPS082-0001
Abstract: D0650 Microwave PIN diode d0311 DFOC WE VQE 11 E DD211B DD311A DDF2311 DDF4311
Text: F IL M F IL n 3575745 m ic r o e l e c t r o n ic s M IC R O E L E C T R O N IC S • |L l I I I ■ DDDOmb fll3 I FLnn Microwave PIN Diode Drivers 7= 5-2-2./ The Ultimate fi Microelectronic Packaging and Interconnect Technology 106 Centennial Drwa fteftofly. MA 01960. USA • TEL 5081S31-8901. FAX: (508 532-9954
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S31-8901.
MILSTD-1772
DD212)
28-channe!
D02850)
MIL-STD-1772.
HPS082-0001
D0650
Microwave PIN diode
d0311
DFOC
WE VQE 11 E
DD211B
DD311A
DDF2311
DDF4311
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ssp4n80a
Abstract: L04A
Text: SSP4N80A Advanced Power MOSFET FEATURES BVdss “ 800 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jaA M ax @ ■ Low Rds(on) : 3.400 Q (Typ.)
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SSP4N80A
TQ-220
Factor178
ssp4n80a
L04A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA { DI SCRE TE /O PT O} 9097250 TOSHIBA 5h DISCRETE/OPTO 56C DE I ^ D T T S S D 00D7Ö3G 07830 O T - 3 3 - / / 2SD870 SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit in ram COLOR TV H O R I Z O N T A L OUTPUT A P P L I C A T I O N S . 085OMAX. 081.OMAX
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2SD870
085OMAX.
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Untitled
Abstract: No abstract text available
Text: SSW/I4N60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ B V 0SS = 6 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 pA Max. @
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SSW/I4N60A
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UV diode
Abstract: No abstract text available
Text: Tbl» material and the Information htr«1n 1« lh« property of Fyjr SleclrEc Co.»Ud. Th«y shall bo n«llh«r reproducid, copiad, font, or dfscfosod In any way whatsoever for Ih« u*« of any third party tior u»ed lor lh« manufacturing purpose» without
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2SK2870-01L
6/13e
UV diode
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ae9t
Abstract: M1011 T460 T760 TP802C09 A2D0.1 a456
Text: TP802C09 ioa SCHO TTKY B A R R IER DIODE ’ Features • 1&VF Low V p Connection Diagram Super high speed switching. High reliability by planer design I Applications High speed power switching. : Maximum Ratings and Characteristics : Absolute Maximum Ratings
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TP802C09
500ns,
l95t/R89
ae9t
M1011
T460
T760
A2D0.1
a456
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SRFE
Abstract: AE01 AG01 ERE51 SIE01 T760 T810 T930 SI AG01 aec1
Text: E R E 5 1 , S I E O I 16A * ± '< * 7 - 9 4 * — Y : Outline Drawings — t M K E f f i j ' * t * - F _ GENERAL-USE RECTIFIER DIODE Features i's'sT y ? • Glass passivated chip • High non-repetitive peak reverse • I f —¿ ^ 3 fe ( lFSM )*''*3^'
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ERE51
SIE01
SIE01
50HzIESÃ
egTi30Â
eaTS30Â
l95t/R89
SRFE
AE01
AG01
ERE51
T760
T810
T930
SI AG01
aec1
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