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    SVD4N65F

    Abstract: svd4n65 TO-220F-3L SVD4N65T 4A650V 2TC2-5 mosfet 650v
    Text: SVD4N65T/SVD4N65F 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored


    Original     		PDF SVD4N65T/SVD4N65F SVD4N65T O-220-3L 50Unit/Tubr O-220F-3L SVD4N65F svd4n65 TO-220F-3L SVD4N65T 4A650V 2TC2-5 mosfet 650v

    SVD4N65F

    Abstract: svd4n65 SVD4N65T TO220F-3L IDM-16 TO220-3L VDMOS 650v ias40a svd4n
    Text: SVD4N65T/SVD4N65F 4A 650V N 2 SVD4N65T/F N MOS S-RinTM VDMOS 1 3 1. AC-DC H 2. 3. DC-DC PMW 1 ∗ 4A 650V RDS on 1 2 3 23 TO-220F-3L =2.3Ω@VGS=10V TO-220-3L ∗ ∗ ∗ ∗ dv/dt SVD4N65T TO-220-3L SVD4N65T 50 / SVD4N65F TO-220F-3L SVD4N65F 50 / ( TC=25°C)


    Original     		PDF SVD4N65T/SVD4N65F SVD4N65T/F O-220F-3L O-220-3L SVD4N65T SVD4N65F SVD4N65F svd4n65 SVD4N65T TO220F-3L IDM-16 TO220-3L VDMOS 650v ias40a svd4n

    svd4n65f

    Abstract: SVD4N65T SVD4N65M 4A650V svd4n65 TO-251-3L 2513L to2513l svd4n TO220F-3L
    Text: SVD4N65T/F/M 4A650V N沟道增强型场效应管 描述 SVD4N65T/F/M N沟道增强型高压功率MOS场效应 晶体管采用士兰微电子的S-RinTM平面高压VDMOS 工艺技 术制造。先进的工艺及条状的原胞设计结构使得该产品具


    Original     		PDF SVD4N65T/F/M 4A650V SVD4N65T/F/M 4A650VRDS SVD4N65T O-220-3L SVD4N65F O-220F-3L svd4n65f SVD4N65T SVD4N65M svd4n65 TO-251-3L 2513L to2513l svd4n TO220F-3L