specification diode 4148
Abstract: 1N4148 1N4148 derating diode do35 C 4148 4148 diode axial
Text: Transys Electronics L I M I T E D HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD 1N4148 DO-35, 500mW MARKING: Cathode band + 4148 no body coat General purpose applications. Hermetically sealed glass and the glass passivated chip Provides excellent stability.
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1N4148
DO-35,
500mW
DO-35
specification diode 4148
1N4148
1N4148 derating
diode do35 C 4148
4148 diode axial
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Untitled
Abstract: No abstract text available
Text: H igh S peed S w itc hing Diode 500mW Surface Mounted Data Sheet M e c ha nic a l Dim e ns ions L L 4148 Description MINIMELF DO-213AA F e a ture s # I N DU S T R Y S T A N DA R D DO -2 1 3 A A P A C K A G E /F O O T P R I N T # E L E C T R I C A L LY I DE N T I C A L T O
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500mW
DO-213AA)
LL4148
100nS
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diode f 4148
Abstract: diode t 4148 T 4148 t 4148 diode 4148 t 4148 4448 diode 4448 diode do35 C 4148 diode IN 4148
Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current
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914/A/B
916/A/B
DO-35
OT-23
diode f 4148
diode t 4148
T 4148
t 4148 diode
4148 t
4148
4448
diode 4448
diode do35 C 4148
diode IN 4148
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diode 4148
Abstract: 4148 diode diode do35 C 4148 B916 FDLL4148 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914
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914/A/B
916/A/B
LL-34
DO-35
LL-34
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
diode 4148
4148 diode
diode do35 C 4148
B916
FDLL4148
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
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diode f 4148
Abstract: 914 or 4148 diode diode 4148 diode t 4148 diode 4448 4148 1n 4148 diode B9-16 Zener+Diode+ph+4148 FDLL914A
Text: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914
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914/A/B
916/A/B
LL-34
DO-35
LL-34
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
diode f 4148
914 or 4148 diode
diode 4148
diode t 4148
diode 4448
4148
1n 4148 diode
B9-16
Zener+Diode+ph+4148
FDLL914A
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diode 4148
Abstract: 1N4148G 1N4148-G
Text: Zowie Technology Corporation 1N4148G Silicon Epitaxial Planar Switching Diode Lead free product Max. 0.5 Applications • High-speed switching Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Features • Fast switching speed • Ultra-small surface mount package
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1N4148G
DO-35
diode 4148
1N4148G
1N4148-G
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Untitled
Abstract: No abstract text available
Text: LL4148 SILICON EPITAXIAL PLANAR DIODE fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4148 These diodes are delivered taped. Details see “Taping”. Absolute Maximum Ratings Ta = 25oC
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LL4148
1N4148
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diode t 4148
Abstract: t 4148 diode SEMTECH ELECTRONICS 1n4148 1N4148 1n 4148 diode 1N4148 4148 4148 diode 4148 LL4148 1n4148 semtech
Text: 1N4148 SILICON EPITAXIAL PLANAR DIODE Fast switching diode This diode is also available in MiniMELF case with the type designation LL4148. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150
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1N4148
LL4148.
diode t 4148
t 4148 diode
SEMTECH ELECTRONICS 1n4148
1N4148
1n 4148 diode
1N4148 4148
4148
diode 4148
LL4148
1n4148 semtech
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DIODE 5H
Abstract: mmbd1201 fw sot-23 5H MARKING BD4148 MMBD4148 MMBD4148CA MMBD4148CC MMBD4148SE Diode Marking 1p SOT-23
Text: MMBD4148 I SE I CC I CA i Discrete P O W E R & S ig n a l Technologies National S e m i c o n d u c t o r M M B D 4148 / SE / CC / CA FI r CONNECTION DIAGRAMS 5H TU ET M M B D 4148 M M B D 4148C C 5H Dò M M B D 4148C A M M B D 4148S E -V t + * t +* 1 D6 D4
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MMBD4148
OT-23
MMBD4148CA
MMBD4148CC
MMBD4148SE
414SSE
414SCC
4141C
MMBD1201-1205
DIODE 5H
mmbd1201
fw sot-23
5H MARKING
BD4148
Diode Marking 1p SOT-23
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D4148
Abstract: OA91 OA91 DIODES oa47 diode in4007 IN 4004 diodes OA47 OA79 IN 4007 OA90 diode
Text: Diodes and Rectifiers M in ia tu re D iod es in glass package M ax im u m ratings Case D 03 D3 O A 91 O A 90 O A 47 O A 79 IN 4148 D 59 D542 D 4148 C o n s tru c tio n y RM V Pt. C o n ta c t Ge Pt. C o n ta c t Ge G o ld B onded Ge Pt. C o n ta ct Ge Si_ D iffused_
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D4148
D36/50
D36/100
D36/200
D36/400
D36/600
D36/800
D36/1000
OA91
OA91 DIODES
oa47 diode
in4007
IN 4004 diodes
OA47
OA79
IN 4007
OA90 diode
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1N4140
Abstract: 1N4305 diode in 4148 diode 1N4151
Text: I n t e r n a t io n a l S e m ic o n d u c to r , I n c . 1N 4148 1N 4446 thru thru 1N 4154 1N 4454 1N 4305 GENERAL PURPOSE PLANAR DIODES DIFFUSED SILICON PLANAR ELECTRICAL CHARACTERISTICS À at 25°C unless otherwise specified Maximum Maximum »laximum IS I
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1N4148
1N4140
1N4150
1N4151
1N4152
1N4153
1N4154
1N4305
1N4446
1N4447
diode in 4148
diode 1N4151
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1N4444
Abstract: 1h44
Text: B K C INTERNA TIO NA L BKC International 30E D Electronics, • 1171183 00003 45 ö ■ Inc. T '0 3 -0<n SPEC. HO: ÌH4444 REVISION: 0 Page: 1 MATERIAL <00-35, SILICON DIODE, TYPE 4148, PC 20a UITB SOLDER PLATED LEADS, »INDICATES WHERE CHANGES FROH PREVIOUS ISSUE HERE HADE.
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00Q03M5
1H4444
1N4444
I472BA
50V-1
200ifi-SEE
25/150C
DO-35
1N4444
1h44
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Untitled
Abstract: No abstract text available
Text: Red Laser Diode DL-4148-021/-221 Features • • • • Tolerance : ± 0 .2 Unit : mm Package Short wavelength : 635 nm Typ. High output p o w e r: 10 mW CW Low threshold cu rren t: Ith = 40 mA (Typ.) Small package : 0 5.6mm Applications • Laser pointer
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DL-4148-021/-221
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Untitled
Abstract: No abstract text available
Text: JA N 1N 4148-1 ☆ JA T Ñ K ? Microísemi Corp. $ The û'Ode e xp ert? SANTA A N A , CA SCOTTSDALE, A 2 F o r m o re in fo rm a tio n call: 714 979-8220 MILITARY SWITCHING DIODES FEA TU RES • MICROMINIATURE PACKAGE • TRIPLE LAYER PASSIVATION • METALLURGICALLY BONDED
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MIL-S-19
I-51J
100mA
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CJ 4148
Abstract: smd 4148 CDSV3-4148-G CDSV3-4448-G
Text: coAVCHir Small Signal Switching Diodes S M D D io d e s S p e c ia lis t CDSV3-4148-G/4448-G R everseVoltage: 75Volts Forward Current: 200 mA RoHS Device Features S O T -3 2 3 - D e s i g n f o r m o u n t i n g on s m al l s u r f a c e . -High speed switching.
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CDSV3-4148-G/4448-G
CDSF4148/4448
1005size
CDSU4148/4448
OT-323,
MIL-STD-750,
OT-323
QW-B0006
CDSV3-4148-G/4448-G)
Tj-25Â
CJ 4148
smd 4148
CDSV3-4148-G
CDSV3-4448-G
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5011N
Abstract: IC la 4148 1N44 wm9 05
Text: TY P ES IN 4148 WM9 1N4446 THRU 1N4449 SILICON SWITCHING DIODES B U L L E T IN N O . D L S 7 3 9 2 6 9 , O C T O B E R 1 9 6 6 - R E V IS E D M A R C H 197 3 FA ST SWITCHING DIODES Rugged Double-Plug Construction • Electrical Equivalents: 1N4148 . . . 1N914 . . . 1N4531
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1N4446
1N4449
1N4148
1N914
1N4531
1N4149
1N916
1N4446
1N914A
1N4447
5011N
IC la 4148
1N44
wm9 05
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T 4148
Abstract: n4148 N 4148 Diode N4148 diode 4149 1N4148 1n 4148 diode 4446 T03B 95288
Text: A E G CORP 17E D TTSUHFIUMìSIIIiO electronic CtealcveTechna'ogies o a a m a t a o c n a a i 5 • 1 N 4148 - 1 N 4 1 4 9 - 1 N 4446 1 |M 4447 • 1 N 4 44 8 -1 N 4449 Silicon Epitaxial Planar Diodes A pplication s: Extreme fast switches Features: • •
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002T42b
N4148
DIN41
-T-03
2c142b
T 4148
N 4148
Diode N4148
diode 4149
1N4148
1n 4148 diode
4446
T03B
95288
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EI-33
Abstract: marking S16 EI33
Text: Scottsdale, aAZz Micmsemi M M m rb c o t t s a a i e , u P r o g r e s s P o w e re d b y T e ch n o lo g y S16-4148 8700 E. Thomas Road Scottsdale, A Z 85251 602 941-6300 A nd S16-4150 Switching Diode Array FEATURES • • • 8 Isolated lines Standard SOIC 16 pin Surface M ount Package
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S16-4148
S16-4150
100mA
200mA
S16-4148
S16-4150
EI-33
marking S16
EI33
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smd ka2 diode
Abstract: smd ka2 KA2 DIODE smd diode marking 77 smd diode arrays
Text: COAVCHir SMD Switching Diode Arrays S M D D io d e s S p e c ia lis t CDSV6-16-G/4148-G Forward Current: 0.15A Reverse Voltage: 75V RoHS Device Features - F a s t s w itc h in g s p e e d . - F o r g e n e r a l p u r p o s e s w i c t h i n g a p p lic a tio n s .
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CDSV6-16-G/4148-G
OT-363
QW-B0032
CDSV6-16-G/4148-G)
Ta-15(
Ta--40Â
smd ka2 diode
smd ka2
KA2 DIODE
smd diode marking 77
smd diode arrays
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Untitled
Abstract: No abstract text available
Text: D16-4148 A nd Micmsemi M M • Scottsdale, A Z D16-4150 m P r o g r e s s P o w e re d b y T e ch n o lo g y Switching Diode Array 8700 E. Thomas Road Scottsdale, A Z 85251 602 941-6300 FEATURES • • • 8 Isolated lines Standard 16 pin Dual-In-Line Package
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D16-4148
D16-4150
100mA
D16-4148
MSC0880
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4148SE
Abstract: BD4148 MBD4148 4148CA 4148C BD120 marking 5c diode "MARKING 5H"
Text: M ICDNDUCTOR ! MMBD4148/SE/CC/CA JH CONNECTION 4 1 ^ S O T -23 M M BD 4148 M M B D 4148C C [IT 3 • 4148SE \ * * * * * *2J 5H H] DIAGRAMS j 1 2 NC 3 I 4148C C MARKING 5H M M BD 4148C A D6 D5 M M BD 4148SE D4 1 2 3 I 4148C A High Conductance Ultra Fast Diode
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MBD4148/SE/CC/CA
MMBD4148/SE/CC/CA
4148SE
4148C
BD1201-1205
BD4148
MBD4148
4148CA
BD120
marking 5c diode
"MARKING 5H"
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Untitled
Abstract: No abstract text available
Text: M m m Chatsworth, CA m M ic m s e m i Prog ress P ow ered b y T echnology 9261 O w ensm outh Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (81 8 )7 0 1-4 9 3 9 M M B D 4148 Features • • • Low C urrent Leakage Low C ost Sm all O utline Surface M ount Package
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500mW
OT-23
QDD4225
MMBD4148
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F02S
Abstract: bd4448 D4148
Text: IIAIEt SURFACE MOUNT SWITCHING DIODES 350 mW SWITCHING DIODES/TO-236 Device Type P eak Reverse Voltage VRM : V V Marking Code : BAS 16 8A V 70 BAV99 B AW 56 BAL99 IM B D 4148 IM B D 4448 A6 JJ JE JD JF A2 A3 O P E R A T IN G /S TO R A G E TE M P E R A TU R E R A N G E -65°C to +175°C
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DIODES/TO-236
BAV99
BAL99
DF005S
DF04S
SDF01
F02S
bd4448
D4148
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diode t 4148
Abstract: t 4148 diode din 4148 diode din 4148 IN4448 T 4148 diode IN 4148 din 4448 diode IN4448 4148 t
Text: «m » 'W 1N 4148 O • 1N 4149 -1N 4446 0 1N 4447 • 1N 4448 O • 1N 4449 Silizium-Epitaxial-Planar-Dioden Silicon epitaxial planar diodes Anwendungen: Extrem schnelle Schalter Applications: Extrem fast switches Die elektrischen Daten entsprechen den Dioden:
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-1N4446
1N914A
IN4446
1N914B
IN4448
diode t 4148
t 4148 diode
din 4148
diode din 4148
T 4148
diode IN 4148
din 4448
diode IN4448
4148 t
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