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Vishay Sfernice RCMT02365R0DES03 SFERNICE FIXED RESISTORS
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DigiKey	RCMT02365R0DES03	Bag	10		1	1 $68.48 10 $44.756 100 $68.48 1000 $68.48 10000 $68.48	Buy Now
Samtec Inc IDMD-13-T-02.36 SLIM BODY DOUBLE-ROW IDC MALE AS Free Sample
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DigiKey	IDMD-13-T-02.36	Bulk			1	1 $11.43 10 $11.43 100 $11.43 1000 $11.43 10000 $11.43	Buy Now
Avnet Americas	IDMD-13-T-02.36	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IDMD-13-T-02.36					1 $11.43 10 $10.35 100 $7.77 1000 $6.94 10000 $6.94	Get Quote
Master Electronics	IDMD-13-T-02.36					1 - 10 $13.28 100 $8.45 1000 $6.23 10000 $6.23	Buy Now
Sager	IDMD-13-T-02.36				1	1 $11.43 10 $10.35 100 $7.77 1000 $6.94 10000 $6.94	Buy Now
Samtec Inc IDMD-10-T-02.36 SLIM BODY DOUBLE-ROW IDC MALE AS Free Sample
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DigiKey	IDMD-10-T-02.36	Bulk			1	1 $8.92 10 $8.92 100 $8.92 1000 $8.92 10000 $8.92	Buy Now
Avnet Americas	IDMD-10-T-02.36	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IDMD-10-T-02.36					1 $8.92 10 $8.08 100 $6.06 1000 $5.42 10000 $5.42	Get Quote
Master Electronics	IDMD-10-T-02.36					1 - 10 $10.36 100 $6.79 1000 $4.87 10000 $4.87	Buy Now
Sager	IDMD-10-T-02.36				1	1 $8.92 10 $8.08 100 $6.06 1000 $5.42 10000 $5.42	Buy Now
Vishay Sfernice RCMT0236500FHS03 SFERNICE FIXED RESISTORS
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DigiKey	RCMT0236500FHS03	Bag			10	1 - 10 $39.359 100 $39.359 1000 $39.359 10000 $39.359	Buy Now
Vishay Sfernice RCMT0236501BES03 SFERNICE FIXED RESISTORS
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DigiKey	RCMT0236501BES03	Bag			10	1 - 10 $73.71 100 $73.71 1000 $73.71 10000 $73.71	Buy Now

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T0236 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BFR540C Abstract: No abstract text available Text: SO T2 3 BFR540 NPN 9 GHz wideband transistor Rev. 6 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits   	Original	PDF	BFR540 BFR540 BFR540C
MPS004 Abstract: npn darlington motorola to92 k0221 HS5305 MPS-004 PMBTA14 PMBTA13 Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BA CEO (V) Ie Max (A) Po Max (W) fT hFE Min Max (Hz) leBO Max (A) t, Max (I) tf Max (I) Tope, Max (Oe) Package Style Complimen Lary Darlington Pairs SOM3003 SOM3000 SOM3004 SOM3001 SOM3005 SOM3002	Original	PDF	SOM3003 SOM3000 SOM3004 SOM3001 SOM3005 SOM3002 2NS534 2NS535 2NS53S 2NS537 MPS004 npn darlington motorola to92 k0221 HS5305 MPS-004 PMBTA14 PMBTA13
2410m Abstract: 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002 Text: Tem ic S e m i c o n d u c t o r s ^ S08 < > ^ T052 T0220 ^ TO237 T092 2 lead T092 (3 lead) Low-Power Discretes I I % DMOS FETs - Low-Power MOS N-Channel Enhancement-Mode I , Pm Number 14-Pin Sidebraze (P) and Plastic (J) i- V Q 1001J 30 V Q 1001P • ■	OCR Scan	PDF	T0220 14-Pin 1001P 1001J 1004J 1004P L000J 1000P 1006P T0236 2410m 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002
Untitled Abstract: No abstract text available Text: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì \|g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)	OCR Scan	PDF	T0220 14-Pin VQ2001J VQ200IP VQ2004J T0236 TP0101T TP0202T TP06I0T VP06I0T
MARKING bs170 Abstract: No abstract text available Text: A pril 1995 National Semiconductor” BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Deccription Features These N-channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products	OCR Scan	PDF	BS170 MMBF170 500mA MMBF170 OT-23, MARKING bs170
Untitled Abstract: No abstract text available Text: TO SHIBA 2SA1621 2 S A 1 621 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO POWER AMPLIFIER APPLICATIONS + 0.5 2 .5 - 0 . 3 • • High hpE : hpE = 100~320 Complementary to 2SC4210 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	PDF	2SA1621 2SC4210
2n6152 Abstract: 1N7000 2N61B 2N676 2N6757 1N7001 2N5184 2N6164 2n6800 IXTP4N90 Text: - 248 M - € tt f ft t Vd s or € i * £ Vg s ÍS Ta=25'0 * /CH Vd g as. 1GSS Pd Id V g s th 1DSS max * /CH ft % 4# fe (13=2 5 * 0 Id (on) Vd s = Vg s Ciss Coss Crss ft & m n V g s =0 (typ) (max) (pF) (max) typ (0) typ (A) Id (A) Vg s (V) typ (S) Id	OCR Scan	PDF	2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6791 O-205AF 2N6792 2n6152 1N7000 2N61B 2N676 1N7001 2N5184 2N6164 2n6800 IXTP4N90
2N7003 Abstract: 2N7011 2N7009 1N7003 2N7073 2N700I 2N6798 2N6799 2N6801 2N6802 Text: - 316 - m £ ± f V Vd s or £ A * Vd g 11/ V £ (V) m (Ta=25°C> Vg s b Ig s s Pd * /CH * /CH (A) m (nA) V g s th) loss Vg s (V) Vd s (V) (HA) min max (V) (V) m ft Id OnA) & 14 CTa=25tl) I d (on) I Ds(on) Vd s = Vss Ciss g fs Coss Crss V g s “0 (max)	OCR Scan	PDF	2N8797 T0-205AF 2N6798 O-205AF 2N6799 O-254AA 2N7077 2N7003 2N7011 2N7009 1N7003 2N7073 2N700I 2N6801 2N6802
Untitled Abstract: No abstract text available Text: RN1410,RN1411 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1410, RN1411 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.5 2.5 — 0.3 + 0.25 1 . 5 - 0.15 With Built-in Bias Resistors Simplify Circuit Design	OCR Scan	PDF	RN1410 RN1411 RN1410, RN2410, RN2411
relay Re 04501 Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031 Text: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997	OCR Scan	PDF	ENGI86 4970A E1199 relay Re 04501 JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
transistor marking ra Abstract: No abstract text available Text: MMBF170LT1 CASE 318-07, STYLE 21 SOT-23 T0-236AB M AXIM UM RATINGS Rating Symbol Value Unit D ra in -S o u rce V o lta g e VD SS 60 Vdc D ra in G a te V o lta g e Vd g s 60 V dc G a te -S o u rce V olta g e — C o n tin u o u s - N o n -re p e titive <tp $ 50 /is)	OCR Scan	PDF	MMBF170LT1 OT-23 T0-236AB) transistor marking ra
226AA Abstract: T0-226AA T0236AB T0226AA Text: Sm all-Signal Small-Signal DMOS Transistors % T0-236AB SOT-23 T0-226AA (TO-92) 219	OCR Scan	PDF	T0-236AB OT-23) T0-226AA 226AA T0-226AA T0236AB T0226AA
marking 1d4 Abstract: No abstract text available Text: DUAL ZENER DIODES COMMON ANODE, 300mW AZ23 SERIES CASE TYPE; T0-236AB (SOT-23) % Dynamic Resistance Zener Voltage1 at lz - 5 m A Reverse Voltage at Ir = 100 nA VzV at lz = 5mA t = 1 kHz rg o D1 2.5 . 2.9 7 5 (<83) <500 - 9 . . -4 AZ23-C3 D2 2.8 . 3.2	OCR Scan	PDF	300mW) T0-236AB OT-23) AZ23-C2V7 AZ23-C3 AZ23-C3V3 AZ23-C3V6 AZ23-C3V9 AZ23-C4V3 AZ23-C4V7 marking 1d4
MMBD1502A Abstract: 1N914 SOT-23 T0236 FOH300 MMBD1402 1n4148 LL34 1N3070 FOH300A 1N485B 1N486B Text: hot a m bSDHBD D03TS07 423 NATL VRRM Irrm Volts Min Device 250 1N486B BAV21 1N3070 1N459 1N459A 1N485B 1N4938 1S923 BAS21 BAV20 FDH400 MMBD1401 MMBD1402 MMBD1403 MMBD1404 MMBD1405 MMBD1501A MMBD1502A MMBD1503A MMBD1504A MMBD1505A 1N3595 1N458A 1N6099 200	OCR Scan	PDF	1N486B D0-35 BAV21 DO-35 1N3070 1N459 1N459A MMBD1502A 1N914 SOT-23 T0236 FOH300 MMBD1402 1n4148 LL34 FOH300A 1N485B

bc 7-25 pnp Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA Text: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30	OCR Scan	PDF	1N914 1N4148 1N4150 1N5229 1N5230 1N5231 1N5232 1N5233 1N5234 1N5235 bc 7-25 pnp transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
to-226aa Abstract: TO226AA T0-226AA CR16 J511 Text: T emic S e m i c o n d u c t o r s S08 T 078 T071 Small-Signal Diodes Part Number Nominal Forward Current mA Forward Current Tolerance (±%) Limiting Voltage Max (V) Peak Operating Voltage Min (V) Dynamic Impedance Min (kQ) Typ Knee Impedance (kQ) Package	OCR Scan	PDF	CR160 CR180 CR200 CR220 CR240 CR270 CR300 CR330 CR360 CR390 to-226aa TO226AA T0-226AA CR16 J511
DN6852 Abstract: 4 pin linear hall sensor schemi DN6849 DN6853 DN8893 DN8893MS DN8899 T0236 4 pin hall high sensitivity Text: Panasonic Hall ICs DN8893M S High Sensitivity Hall 1C Operating in Alternative Magnetic Field • Overview The DN8893MS is a combination of a Hall element, amplifier, Schmidt Circuit, stabilized power supply and temperature compensator integrated on an identical chip	OCR Scan	PDF	DN8893MS DN8893MS DN8893 DN6852 DN6849 DN6853 DN8899Â 4 pin linear hall sensor schemi DN6849 DN8899 T0236 4 pin hall high sensitivity
BD371C-10 Abstract: BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6 Text: NATL S E M IC O N D H E D IS C R E T E D • tS0 1 1 3 D 0Q371SB fi 1 S -a CM T" O z CM eg Y~ o CM r* ST -f u T-03-01 « e 3 m o o s i o « 0 *c a) /) c o z Sï (/) « fl «?&2 <D » <D o f X a Jr i o Û) 8 S to CO LU o CL k. w o Q. m S's U o o o o o o o o	OCR Scan	PDF	b50113D L5D1130 T-03-01 BD371C-10 BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6
Untitled Abstract: No abstract text available Text: Panasonic Hall ICs DN8893MS High Sensitivity Hall 1C Operating in Alternative Magnetic Field • Overview U nit I m m The D N8893M S is a combination of a Hall element, amplifier, Schmidt Circuit, stabilized power supply and temperature compensator integrated on an identical chip	OCR Scan	PDF	DN8893MS N8893M DN8893 DN6852 DN6849 DN8893 DN6849) SSIP003-P-0000
mps 444 Abstract: ib74 2N4125 2N4126 FTS03392 FTS03393 MPS3392 MPS3393 t144 curve set t144 Text: &H FAIRCHILD SEM ICO NDUCTOR DE ÍB Mb Tb 74 005737b MPS3392/FTS03392 MPS3393/FTS03393 FAIRCHILD A Schlumberger Company NPN Small Signal General Purpose Amplifiers - — « « • . . . 25 V M in hFE . • • 150-300 (M P S /FT S 03392), 90-180 (M P S /FT S 03393)	OCR Scan	PDF	MPS/FTS03392) MPS/FTS03393) 2N4125, 2N4126 MPS3392 MPS3393 FTS03392 FTS03393 O-236AA/AB O-236AA/AB mps 444 ib74 2N4125 2N4126 FTS03392 FTS03393 MPS3392 MPS3393 t144 curve set t144
Untitled Abstract: No abstract text available Text: 2SA1620 T O SH IB A 2 S A 1 620 TO SH IBA TRANSISTO R SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AU DIO FREQ U ENCY AM PLIFIER APPLICATIO N S + 0.5 2.5 - 0 .3 Complementary to 2SC4209 MAXIM UM RATINGS (Ta = + 0.25 1 .5 - 0 .1 5 , 25°C) SYMBOL CHARACTERISTIC	OCR Scan	PDF	2SA1620 2SC4209
MV2107 Abstract: MV2105* equivalent MMBV2109LT1 equivalent 4j diode MV2113 diode mv2105 MMBV2101LT1 MMBV2104 MV2103 MMBV2103LT1 Text: SILICON EPICAP DIODES . designed in the popular PLASTIC PA C KAG E for high volum e require ments of F M Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods.	OCR Scan	PDF	MV21XX MMBV21XXLT1 1MV21 40Vdc n/MV2109 MV2107 MV2105* equivalent MMBV2109LT1 equivalent 4j diode MV2113 diode mv2105 MMBV2101LT1 MMBV2104 MV2103 MMBV2103LT1
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes BAT54LT1 These Schottky barrier diodes are designed tor high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and	OCR Scan	PDF	BAT54LT1 OT-23 T0-236AB) DCH3A73
Untitled Abstract: No abstract text available Text: 1SS374 T O SH IB A TO SHIBA DIODE HIGH SPEED SW ITCHING APPLICATION 1 SS374 SILICON EPITAXIAL SCH O TTKY BARRIER TYPE Unit in mm + 0.5 8.5 0.3 • • + 0.2 5 1.5 - 0 .1 5 Small Package Low Forward Voltage : Vp 2 = 0.23V (TYP.) @Ijr = 5mA I- -I o' o + MAXIM UM RATINGS (Ta = 25°C)	OCR Scan	PDF	1SS374 SS374

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T0236 Price and Stock

Vishay Sfernice RCMT02365R0DES03

Samtec Inc IDMD-13-T-02.36

Samtec Inc IDMD-10-T-02.36

Vishay Sfernice RCMT0236500FHS03

Vishay Sfernice RCMT0236501BES03

T0236 Datasheets Context Search

BFR540C

MPS004

2410m

Untitled

MARKING bs170

Untitled

2n6152

2N7003

Untitled

relay Re 04501

transistor marking ra

226AA

marking 1d4

MMBD1502A

bc 7-25 pnp

to-226aa

DN6852

BD371C-10

Untitled

mps 444

Untitled

MV2107

Untitled

Untitled