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    T03 PACKAGE TRANSISTOR PIN DIMENSIONS Search Results

    T03 PACKAGE TRANSISTOR PIN DIMENSIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH8R316MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -90 A, 0.0064 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH3R10AQM Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 120 A, 0.0031 Ω@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    T03 PACKAGE TRANSISTOR PIN DIMENSIONS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N7805

    Abstract: gw 340 diode t03 package transistor pin configuration 32N03 DTG2400 DTG-2400 2N2144A 2N1100 2N126 2n228 transistor
    Text: CY7C1339 128K x 32 Synchronous-Pipelined Cache RAM Features The CY7C1339 I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V tolerant when V DDq=2.5V. * Supports 100-MHz bus fo r Pentium and PowerPC operations w ith zero w ait states


    OCR Scan     		CY7C1339 100-MHz 166-MHz 133-MHz CY7C1339 Y220a/ T0220AA T0220AB TMW515TDB 2N7805 gw 340 diode t03 package transistor pin configuration 32N03 DTG2400 DTG-2400 2N2144A 2N1100 2N126 2n228 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: i IT ¡electronics . SILICON EPITAXIAL NPN TRANSISTOR '• E - - Semelab Limited 2N5886 Hermetic T03 Metal Package. Designed For General Purpose, Switching and Power Amplifier Applications Screening Options Available


    OCR Scan     		2N5886 PDF

    t03 package transistor pin dimensions

    Abstract: 8830 transistor
    Text: i IT ¡electronics . SILICON EPITAXIAL NPN TRANSISTOR '• E - - Semelab Limited 2N5886 Hermetic T03 Metal Package. Designed For General Purpose, Switching and Power Amplifier Applications Screening Options Available


    OCR Scan     		2N5886 t03 package transistor pin dimensions 8830 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN POWER TRANSISTOR IT ¡electronics . Semelab Limited 2N3055 High Gain A t High Current. Hermetic T03 Metal package. Ideally Suited For General Purpose Switching Screening Options Available


    OCR Scan     		2N3055 PDF

    Transistor 2n3055

    Abstract: power transistor 2n3055 t03 package transistor pin dimensions tr 2n3055 2N3055 2n3055 pin
    Text: SILICON NPN POWER TRANSISTOR IT ¡electronics . Semelab Limited 2N3055 High Gain A t High Current. Hermetic T03 Metal package. Ideally Suited For General Purpose Switching Screening Options Available


    OCR Scan     		2N3055 Transistor 2n3055 power transistor 2n3055 t03 package transistor pin dimensions tr 2n3055 2N3055 2n3055 pin PDF

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES Low Noise, Matched Dual PNP Transistor MAT03 FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 jiV max Low Noise: 1 n V /\ Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE — 0.3 i l typ


    OCR Scan     		MAT03 PDF

    6331-1

    Abstract: t03 package transistor pin dimensions LAS6330P1 LAS 6330P1 LAS6331A za100 LAS-6330 6331P1 LAS6330 LAS6331P1
    Text: A LAMBDA SWITCHING REGULATORS LAS 63 30 SERIES 3 AMP SWITCHING REGULATORS ABSOLUTE MAXIMUM RATINGS SYMBOL MAXIMUM UNITS 35 Volts I I O o PARAMETER Control C ircuit Voltage :< > FEATURES • • • • • DC to 100 kHz operation Adjustable output voltage


    OCR Scan     		LAS6330, LAS6330P1, 6331P1 113-Jâ LAS6330 LAS6331 LAS6330P1 LAS6331P1 6331-1 t03 package transistor pin dimensions LAS6330P1 LAS 6330P1 LAS6331A za100 LAS-6330 6331P1 LAS6330 LAS6331P1 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE DbE D • PowerMOS transistor ODlHbflT 4 ■ BUZ83A T-Z°l-1 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ83A T-39-11 DD14fc bbS3T31 PDF

    BUZ24

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53cl31 OOmSTfl 1 ■ - BUZ24 r-3 i-is July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		bb53c BUZ24 bbS3T31 Q014bD2 T-39-13 BUZ24_ 0D14b03 BUZ24 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor " • bbS3TBl 00147BH B BUZ54A T -2 ? -/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		00147BH BUZ54A T-39-13 bbS3T31 0D1472T bb53131 PDF

    BUZ84

    Abstract: No abstract text available
    Text: N AMER PH IL IP S/ D I S CR E T E PowerMOS transistor ObE D • bb53T31 O O m b l b BU Z84 1 ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		bb53T31 BUZ84 T-39-13 S3131 BXXZ84_ D0147Q2 BUZ84 PDF

    Untitled

    Abstract: No abstract text available
    Text: _ _ _ _ _ _ PowerMOS transistor N AMER PHILIPS/DISCRETE B U Z 4 5 A _ ObE D ^ • bbSa^l O D m b S M J ’ ~ ~ T - 2? - i 3 July 1987 GENERAL DESCRIPTION N-channel enhancement moae field-effect power transistor in a metal envelope.


    OCR Scan     		BUZ45A_ bb53T31 0014bS7 T-39-13 T-39-13 D014bST BUZ45A PDF

    buz53a

    Abstract: No abstract text available
    Text: PowerMOS transistor N AMER PHILIPS/DISCRETE _BUZ53A_ DbE D • bbS3T31 DD14710 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ53A_ bbS3T31 DD14710 T-39-11 LLS3T31 BUZ53A 0Dm71b buz53a PDF

    Untitled

    Abstract: No abstract text available
    Text: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ83 ObE D • bb 53131 OOlMbfia 1 ■ r - 3 9 -!/ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ83 T-39-11 BUZ83_ bb53T31 bb53131 PDF

    BUZ84A

    Abstract: D147D MC 140 transistor V103 "MC 140" transistor V103 TRANSISTOR
    Text: PowerMOS transistor BUZ84A N AMER PHILIPS/DISCRETE — — — — 0L.E D • bbSBTBl QOIMTOB 5 — July 1987 QUICK REFERENCE DATA PARAMETER SYMBOL Drain-source voltage VDS Drain current d.c. Id Total power dissipation Ptot Drain-source on-state résistance


    OCR Scan     		BUZ84A 001470Tb T-39-13 BUZ84A D147D MC 140 transistor V103 "MC 140" transistor V103 TRANSISTOR PDF

    BUZ84

    Abstract: t03 package transistor pin dimensions V103 TRANSISTOR V103 transistor t03 buz84 ma
    Text: N AMER PH IL IPS/ DI SC RE TE ObE D P o w e rM O S tra n s is to r • ^53=131 QDlMblt 1 ■ B U Z 84 ^ - 5 ^ 1 3 July 1987 QUICK REFERENCE DATA PARAMETER SYMBOL Draln-source voltage VDS Drain current d.c. Id Total p*wer dissipation *tot Drain-source on-state resistance


    OCR Scan     		BUZ84 ttS3131 T-39-13 Q0147QE t03 package transistor pin dimensions V103 TRANSISTOR V103 transistor t03 buz84 ma PDF

    DAC-08

    Abstract: No abstract text available
    Text: ANALOG DEVICES Lo/vNase, ^fetched dial R\P Transistor M FEATURES Dual Matched P NPTransistor Low Offset Voltage: 100 jiV max Low Noise: 1 nV/^H z @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 M Hz typ Tight Gain M atching: 3% max Excellent Logarithmic Conformance: rBE — 0.3 i l typ


    OCR Scan     		PDF

    BUZ54A

    Abstract: t03 package transistor pin dimensions T-39-13 transistor BUZ54 IEC134 T3913 C413N 4-10N
    Text: N AMER PHI LI PS /D IS CR ET E übE D P o w e r M O S transistor " • ^53=131 0014724 S B U Z 54A T - 2 ^ -/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ54A 7Z63885 bbS3T31 0D14751 T-39-13 BUZ54A t03 package transistor pin dimensions T-39-13 transistor BUZ54 IEC134 T3913 C413N 4-10N PDF

    t03 package transistor pin configuration

    Abstract: LAS8100P c5cs transistors,darlingtons LAS8101 t03 package transistor pin dimensions
    Text: A LAM BDA INTERFACE DRIVERS LAS 8100 SERIES 3 AMP PEAK SWITCHING TRANSISTOR DRIVERS ABSOLUTE MAXIMUM RATINGS SYM BOL MAXIMUM UNITS Supply Voltage Vcc 26 Volts Logic Input Voltage V,N Vcc PARAM ETER FEATURES • • • • • Provides simple turn-on and turn-off


    OCR Scan     		100mV 8100P t03 package transistor pin configuration LAS8100P c5cs transistors,darlingtons LAS8101 t03 package transistor pin dimensions PDF

    Untitled

    Abstract: No abstract text available
    Text: PowerM OS transistor N AMER PHILIPS/DISCRETE _ BU Z63_J DbE D • hbSBTBl D014b33 T ■ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in


    OCR Scan     		D014b33 BUZ63_ bbS3T31 T-39-11 BUZ63 14h3fl III11 i111111 PDF

    VSK64

    Abstract: LAS6350P1 LAS6351P1 6351P1 LAS-6351P1 LAS6351 LAS6350 LAS-6350P1 LAS-6351
    Text: A LAMBDA SWITCHING REGULATORS LAS 6350 SERIES 5 AMP SWITCHING REGULATORS I ABSOLUTE MAXIMUM RATINGS FEATURES • • • • • D C to 100 kHz operation Adjustable output voltage Cycle-by-cycle current limit Internal thermal shutdown Inhibit/enable control pin


    OCR Scan     		LAS6350, LAS6350P1, 6351P1 LAS6350 LAS6351 LAS6350P1 LAS6351P1 VSK64 LAS6350P1 LAS6351P1 6351P1 LAS-6351P1 LAS6351 LAS6350 LAS-6350P1 LAS-6351 PDF

    BUZ83A

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE OLE D • PowerMOS transistor hbS3T31 DOlMbfii 4 ■ BUZ83A T - n - i i July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in


    OCR Scan     		BUZ83A 7Z8388S bbS3T31 T-S9-11 BUZ83A PDF

    BUZ84A

    Abstract: No abstract text available
    Text: PowerMOS transistor_ BUZ84A_ | N AUER PHILIPS/DISCRETE ObE D • bbSBTBl 0 0 m 7 0 3 5 ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metai envelope. This device is intended for use in


    OCR Scan     		BUZ84A_ BUZ84A bbS3T31 T-39-13 BUZ84A PDF

    vsk64

    Abstract: S6380 LAS6381 LAS6381P1 LAS6380 12v dc to 12v ct 12v amplifier
    Text: un INTEGRATED CIRCUITS LAS 6380 SERIES UNITRODE 8 AMP SWITCHING REGULATORS T-58-//-3/ FEATURES DESCRIPTION • • • • • The LAS 6380 Series are monolithic integrated circuits designed for fixed fre­ quency, pulse width modulated, switching converter applications such as step-down,


    OCR Scan     		6380PU6381P1 T-58-//-3/ VSK64 LAS6380, LAS6380P1, 6381P1 6TJ55 vsk64 S6380 LAS6381 LAS6381P1 LAS6380 12v dc to 12v ct 12v amplifier PDF