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    T3913 Search Results

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    T3913 Price and Stock

    Fix Supply ZUSA-HT-3913

    Latex Tubing - 4mm ID x 6mm OD x
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    DigiKey ZUSA-HT-3913 Bulk 1
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    Honeywell Sensing and Control 31NT391-3-C08

    SWITCH TOGGLE SPDT 15A 125V
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    Mouser Electronics 31NT391-3-C08
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    Honeywell Sensing and Control 32NT391-3-C07

    SEALED OI SWITCH
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    Honeywell Sensing and Control 631NT391-3-B08

    SEALED OI SWITCH
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    TE Connectivity CGAT-39-13-0-SP

    CGAT-39/13-0-SP 1=1M
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    DigiKey CGAT-39-13-0-SP Box 60
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    T3913 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    T3913 Semicon Components 30A Iout, 400V Vrrm Fast Recovery Rectifier Scan PDF
    T3913R Semicon Components 30A Iout, 400V Vrrm Fast Recovery Rectifier Scan PDF

    T3913 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: T3913 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current30 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time200n @I(F) (A) (Test Condition)1 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)30


    Original
    T3913 Current30 Voltage400 Time200n Current25u PDF

    sfn065d

    Abstract: itron 406
    Text: 8368602 SOL ITRON DEVICES SFN065D INC 01990 SWITCH MOS PA CKA G E TO-3 IDM VGS PD XL T J oper T . stg UNITS Voltage, Drain to Source Drain Current, Clamped Inductive XDSS V 010 G fs VGS(th). IGSS C ISS CRSS coss ^d(on) t r td ( o f f ) Cf 16 W 20 A -55 to +150


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    T-39-11 SFN065D 5M6-24UNF-2A P06fTKM eA03AT sfn065d itron 406 PDF

    sfnf065a

    Abstract: TO228
    Text: S O L IT R O N D E V IC E S INC- 7D d e . | a a tflb D a o a o n a a SWITCH MOS i | t^39^o7 SFNF065A POWER MOS MAXIMUM IDM VGS PD h ^•J oper T stg I. UNITS Voltage, Drain to Source 60 V Drain Current, Continuous @ T =25°C ’ c Drain Current, Pulsed


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    SFNF065A Drain0411 5M6-24UNF-2A P06fTKM eA03AT sfnf065a TO228 PDF

    sfn452a

    Abstract: No abstract text available
    Text: 8368602 » F l f l B b ö b O S OQQECHB DEVICES 1 I INC 70C ÏI3 Ç M 3 02093 SWITCH MOS ^ SFN452A POWER MOS PACKAGE TO -3 MAXIMUM RATINGS VDS *D XDM VGS PD Tj oper T stg 1- UNITS PARAMETER SYMBOL Voltage, Drain to Source 500 V Drain Current, Continuous @ T *25°C


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    SFN452A Voltag0-32 5M6-24UNF-2A P06fTKM eA03AT sfn452a PDF

    sfn151

    Abstract: No abstract text available
    Text: 8368602 SOLITRON DEVICES INC SFN151 70C 02020 SWITCH MOS PACKAGE TO -3 D T-39-13 ï>F|fl3 bûL.oE □□□sded 7 | ~ POWER MOS MAXIMUM RATINGS VDS XD IDM VGS PD *L ^J oper T stg UNITS PARAMETER SYMBOL 60 Drain Current, Continuous @ Tc=25°C 40 Drain Current, Pulsed


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    T-39-13 SFN151 5M6-24UNF-2A P06fTKM eA03AT sfn151 PDF

    sfnf101a

    Abstract: electrical symbols
    Text: SOLÎTRON DEVICES INC 7Ü DE | Û3t.flti02 O Q O l ^ l b | T-39-05 SWITCH MOS SFNF101A POWER MOS PACKAGE TO-39 MAXIMUM RATINGS *DM VGS PD XL ^J oper T „ stg “ 100 Drain Current, Continuous @ T »25°C c Drain Current, Pulsed 1 .5 4.5 A Voltage, Gate-to-Source


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    flti02 T-39-05 SFNF101A 5M6-24UNF-2A P06fTKM eA03AT sfnf101a electrical symbols PDF

    2N7074

    Abstract: No abstract text available
    Text: 33E D SILICONIX INC fCT'S i ficonix • 62SM73S QOlbDEb 5 « S I X 2N7074 incorporated N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW o PRODUCT SUMMARY V BR|DSS "W* Id (A 500 0,85 7.0 1 DRAIN 2 SOURCE 3 GATE 1 2 3 Case Isolated


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    62SM73S 2N7074 O-254AA THERMG01ba21 T-39-13 PDF

    eRVDS

    Abstract: 2SK797 OS1012
    Text: "t û DÊJb427S2S 6427525 N E C 0Dlflci4S ELECTRONICS fl 98D INC 18942 D T 3e N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK797 D E S C R IP TIO N The 2SK797 Is N-Channel MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed for solenoid, motor and lamp driver.


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    Jb457S5S 2SK797 eRVDS OS1012 PDF

    2SK786

    Abstract: fsjc EER 35 kd
    Text: E m C ELECTRONICS T| b42752S INC ÜDiflT34 98D 18934 D T - 3 9 -1 3 =J . P R E LIM IN A R Y S P E C IF IC A T IO N F A S T S W IT C H IN G N -Ç H A N N EL S IL IC O N PO W ER Absolute Maximum Rat¡ngs Ta=25*C 800V VOSS Drain to Source Voltage ± 2j V vcss


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    T-39-13 GoiflT34 2SK786 -55to 51DTH fsjc EER 35 kd PDF

    2SK707

    Abstract: P07E2 18896 PVS100 SK707 6M60 nec 13A
    Text: 6427525 N E C ELECTRONICS INC N E C ELECTRONICS INC : fy bÿÿâÿ lK MO S F.IELD E F F E C T , T R A N S I ST 1 / FAST SWITCHING N-CHANNEL SILICON POWER M A X ., • 1 2 ± 0.2 * ,— A FET Features •«Suitable for switching power supplies, DC-DC converters and pulse c irc u its


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    -55tc PVS100 T-39rl3 2SK707 P07E2 18896 SK707 6M60 nec 13A PDF

    VNS009D

    Abstract: VNS008D 001S03 VNT008D VNT009D
    Text: 18E D SILICONIX INC • B254735 001502=1 fc, ■ VNT008D/9D, VNS008D/9D IX Sincorporated illconix JLM N-Channel Enhancement Mode Transistors TO-220AB TO P VIEW PRODUCT SUMMARY PART NUM BER V BR|DSS VNT008D O IDS(ON (il) (A) >D 650 1.5 5.77 VNS008D 600 1.5


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    2S473S VNT008D/9D, VNS008D/9D O-220AB VNT008D VNS008D VNT009D VNS009D ITQ09A NS009Ã 001S03 PDF

    diode G727

    Abstract: IRH150 T0204 731 MOSFET annealing copper g730 J600 MOSFET G-731 IRH15Q
    Text: HE D I 4055452 GQG^SG 7 | INTERNATIONAL R E C T I F I E R Preliminary Data Sheet No. PD-9.478A INTERNATIONAL RECTIFIER HEXF ET TRANSISTORS IRH15Q RAD HARD Product Summary 100 Volt, 0.0550, Rad Hard HEXFET International R e ctifie r’s RAD HARD H EXFETs demonstrate excellent threshold voltage stability and


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    40ss4sa IRH15Q IRH150 T-39-13 G-737 diode G727 T0204 731 MOSFET annealing copper g730 J600 MOSFET G-731 IRH15Q PDF

    AN-959

    Abstract: AN-961 AN-963 IRC150
    Text: HE 0 I MÔ5S452 ODOÔ"l4b ô | Provisional Data Sheet No. PD-9.502A INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER TOR REPETITIVE AVALANCHE AND dv/dt RATED HEXSense — Current; Sense IRCiSO Product Summary 100 Volt, 0.055 Ohm Current Sense Plastic Package Similar to T0-220


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    5S45Z T0-220 IRC150 O-204AE T-39-13 AN-959, AN-961, AN-962 AN-963. AN-959 AN-961 AN-963 PDF

    Diode FAJ 32

    Abstract: diode c604 st c608 A diode IRFPF40 IRFPF42 20V n-Channel Power MOSFET c608 e diode irf 607 diode lg 47a 7A, 100v fast recovery diode
    Text: h e D I M assM sa G ao flfisa □ | Data Sheet No. PD-9.580A IN TER NAT IO NA L R E C T IF IE R f-AJ INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFPF40 IRFPF4S N-CHANNEL 900 Volt, 2.5 Ohm HEXFET TO-247AC TO-3P Plastic Package


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    O-247AC C-607 IRFPF40, IRFPF42 T-39-13 C-608 Diode FAJ 32 diode c604 st c608 A diode IRFPF40 20V n-Channel Power MOSFET c608 e diode irf 607 diode lg 47a 7A, 100v fast recovery diode PDF

    irfae42

    Abstract: JRFAE42
    Text: he o I qassqsa oocnasq y | Data Sheet No. PD-9.579A INTERNATIONAL RECTIFIER T ^ T - fS ' INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED IRFAE40 IRFAE42 HEXFET TRANSISTORS N-CHANNEL 800 Volt, 2.0 Ohm HEXFET TO-204AA TO-3 Hermetic Package


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    IRFAE40 IRFAE42 O-204AA G-237 IRFAE40, IRFAE42 S54S2 G-238 JRFAE42 PDF

    2SK1171

    Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
    Text: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn


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    001SS7 25-35kg 2SK1171 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151 PDF

    2N6764

    Abstract: 2N6763 27812
    Text: FAIRCHILD SEMICONDUCTOR A4 DË 3 4 ^ 7 4 3469674 F AIRCHILD SEMICONDUCTOR □□27Û1D 1 J - 84D 2 7 8 1 0 D 2N6763/2N6764 T - *7-/3' N-Channel Power M O SFETs, 38 A, 60 V/100 V' F A IR C H IL D A Schlumberger Company Power And Discrete Division TO-2Q4AE


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    2N6763/2N6764 2N6764 2N670 2N6763/2N6764 T-39-13 2N6763 27812 PDF

    irf350

    Abstract: 1RF35 2clg
    Text: HE D I MflSS4S2 GQOTISE T | INTERNATIONAL RECTIFIER Data Sheet No. PD-9.304G T - lî z L l— INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRF3SO fo IRF351 IRF3SS IM - C h a n n e l IRF353 Features: 400 Volt, 0.3 Ohm HEXFET The HEXFET technology is the key to International


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    IRF351 IRF353 G-134 irf350 1RF35 2clg PDF

    Untitled

    Abstract: No abstract text available
    Text: 3QE { = J *w Æ u D _WÊ_ 7 ^ 5 3 ? S C S -T H O M S O N Q Ü S W S s fi 1 • ' " p 3 < :M 3 > S’ ,H # " S M H D ^ © [l[L i© ¥ ^ © iD g i S G S P 3 6 1 S G S P 3 6 2 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP361 SGSP362 V qss


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    SGSP361 SGSP362 SGSP361 PDF

    irfbc40

    Abstract: No abstract text available
    Text: HE D I MÛ55452 GODÖLSG 1 | Data Sheet No. PD-9.506A INTERNATIONAL RE CT I F I E R INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFBC40 IRFBC4S N-CHANNEL 600 Volt, 1.2 Ohm HEXFET TO-220AB Plastic Package Product Summary


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    IRFBC40 O-220AB C-405 IRFBC40, IRFBC42 C-406 irfbc40 PDF

    Untitled

    Abstract: No abstract text available
    Text: 6427S25 N E C D Ë J b427SES E L E C T R O N IC S DD11DD1 IN C 980 19009 D T - 3 «7-/3 1 |~ M 0S F I E L D E F F E C T T R A .V S I S T C K ELECTRON DP/ICE FAST SW IT C H IN G N - "C H A N N E L S I L I C O N POWER WOS FET PA CK A G E DIMENSIONS Features


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    6427S25 b427SES DD11DD1 T-39-13 PDF

    Untitled

    Abstract: No abstract text available
    Text: fiâïWS N E C N E C ELECTRONICS 98D INC ELECTRONICS INC ~Tfl 19005 D 7" — 3 DËf| t.Ma?SES i G D n D D S 4 — * *— M O S F I E L D E F F E C T T R A X S I S T C r . ELECTRON DEVICE 2 F A S T N - C H A N X E L S K 8 2 S S W I T C H I N G S I L I C O N '


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    T-39-13 PDF

    Untitled

    Abstract: No abstract text available
    Text: 6427525 N E C ELECTRONICS tiME75E!5 O G l f i W INC 9ÔD 18989 D -f- 3 ? W 3 1 |~ -••\.vs't.¿V-.-s:>•■*. V i r - v ,.-'•; - ? % § < , & V-ïÿ' ELECTRON DEVICE M O S " F I E L D ' 'E F F E~C T " T R Ä N S I S T 0 ?.~ /' • 2 S K F A S T


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    tiME75E h427sa5 T-39-13 PDF

    Untitled

    Abstract: No abstract text available
    Text: 6427525 TÛ N E C De | ELECTRO N ICS bM27S5S OaiöTBfi INC b P R E L IM IN A R Y S P E C IF IC A T IO N MOS FIE LD EFFECT P OWE R TRANSISTOR ELECTRON DEVICE FAST SWITCHING N-CHANNEL S I L I C O N POWER MOS FET FEATURES « S u ita b le f o r sw itch in g power s u p p lie s ,


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    bM27S5S PDF