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Samtec Inc IDMD-14-T-09.00 SLIM BODY DOUBLE-ROW IDC MALE AS Free Sample
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DigiKey	IDMD-14-T-09.00	Bulk			1	1 $13.66 10 $13.66 100 $13.66 1000 $13.66 10000 $13.66	Buy Now
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Newark	IDMD-14-T-09.00	Bulk			1	1 $17.55 10 $16.32 100 $9.86 1000 $9.86 10000 $9.86	Buy Now
Samtec Inc IDMD-12-T-09.00 SLIM BODY DOUBLE-ROW IDC MALE AS Free Sample
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DigiKey	IDMD-12-T-09.00	Bulk			1	1 $12.2 10 $12.2 100 $12.2 1000 $12.2 10000 $12.2	Buy Now
Newark	IDMD-12-T-09.00	Bulk			1	1 $15.69 10 $14.58 100 $8.82 1000 $8.82 10000 $8.82	Buy Now
Samtec Inc IDMD-25-T-09.00 SLIM BODY DOUBLE-ROW IDC MALE AS Free Sample
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DigiKey	IDMD-25-T-09.00	Bulk			1	1 $19.84 10 $19.84 100 $19.84 1000 $19.84 10000 $19.84	Buy Now
Newark	IDMD-25-T-09.00	Bulk			1	1 $25.51 10 $23.72 100 $14.34 1000 $14.34 10000 $14.34	Buy Now
Samtec Inc IDMS-11-T-09.00 SLIM BODY SINGLE-ROW IDC MALE AS Free Sample
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DigiKey	IDMS-11-T-09.00	Bulk			1	1 $8.32 10 $8.32 100 $8.32 1000 $8.32 10000 $8.32	Buy Now
Newark	IDMS-11-T-09.00	Bulk			1	1 $11.95 10 $11.95 100 $7.81 1000 $5.93 10000 $5.93	Buy Now
Samtec Inc IDMS-05-T-09.00 SLIM BODY SINGLE-ROW IDC MALE AS Free Sample
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DigiKey	IDMS-05-T-09.00	Bulk			1	1 $5.1 10 $5.1 100 $5.1 1000 $5.1 10000 $5.1	Buy Now
Newark	IDMS-05-T-09.00	Bulk			1	1 $8.74 10 $8.74 100 $6.4 1000 $3.46 10000 $3.46	Buy Now

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T0900 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
T0900EA45A Abstract: D-68623 IC-900A Text: WESTCODE An Date:- 20 Sep, 2006 Data Sheet Issue:- 4 IXYS Company Insulated Gate Bi-Polar Transistor Type T0900EA45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V VCES Collector – emitter voltage 4500 VDC link Permanent DC voltage for 100 FIT failure rate.	Original	T0900EA45A T0900EA45A D-68623 IC-900A	PDF
MJ 5030 Abstract: T0900TA52E Text: Date:- 17 Jun, 2003 Provisional Data Data Sheet Issue:- 2 Absolute Maximum Ratings VOLTAGE RATINGS Insulated Gate Bi-Polar Transistor Type T0900TA52E MAXIMUM LIMITS UNITS Collector – emitter voltage 5200 V VDC link Permanent DC voltage for 100 FIT failure rate.	Original	T0900TA52E T0900TA52E MJ 5030	PDF
Untitled Abstract: No abstract text available Text: WESTCODE An Date:- 30 Oct, 2008 Data Sheet Issue:- 1 IXYS Company Provisional Data Insulated Gate Bi-Polar Transistor Type T0900EB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.	Original	T0900EB45A 10ms1 T0900EB45A	PDF
Untitled Abstract: No abstract text available Text: Date:- 6 May, 2014 Data Sheet Issue:- P1 Prospective Data Insulated Gate Bi-Polar Transistor Type T0900DF65A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 6500 V VCES Collector – emitter voltage Tj 25°C	Original	T0900DF65A T0900DF65A	PDF
T0900EB Abstract: ad 156 transistor D-68623 OF IGBT 2000A 2000V Westcode Semiconductors transistor T0900EB45A Text: WESTCODE An Date:- 30 Oct, 2008 Data Sheet Issue:- 1 IXYS Company Provisional Data Insulated Gate Bi-Polar Transistor Type T0900EB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V VCES Collector – emitter voltage 4500 VDC link Permanent DC voltage for 100 FIT failure rate.	Original	T0900EB45A T0900EB45A T0900EB ad 156 transistor D-68623 OF IGBT 2000A 2000V Westcode Semiconductors transistor	PDF
press-pack igbt Abstract: T0240NB45E T2400GB45E E0800QC25C E0280YH25C snubber IGCT T1200TB25A westcode igbt IGBT 5kV T1500TB25E Text: PRODUCT BRIEF d e v o V r Imp nd 4.5k a V s k t 5 e . s 2 chip Press-Pack IGBTs Features and Benefits May 2010 Issue 2 Featuring the improved 2.5kV and 4.5 kV chipsets with typically 25% reduced Vce sat With a track record spanning more than 10 years as a leading	Original	D-68623 press-pack igbt T0240NB45E T2400GB45E E0800QC25C E0280YH25C snubber IGCT T1200TB25A westcode igbt IGBT 5kV T1500TB25E	PDF
the calculation of the power dissipation for the igbt and the inverse diode in circuits Abstract: IGCT 10 kw schematic induction heating "the calculation of the power dissipation for the igbt and the inverse diode in circuits" IGCT thyristor calculation of IGBT snubber snubber IGCT IEGT abb press-pack igbt igbt inverter schematic induction heating Text: Positive development in power electronics New 5.2kV Extra Fast Recovery Diode for IGBT and IGCT Applications. New 5.2 kV Extra Fast Recovery Diode for IGBT and IGCT Applications A. Golland, F. J. Wakeman, G. Li Westcode Semiconductors Ltd, Langley Park, Chippenham, SN15 1GE, UK	Original		PDF
C0044BG400 Abstract: T2400GB45E T0850VB25E T0570VB25G C0044BG400SBT gate driver IGBT westcode igbt C0044BG400SBF C0044BG400SBJ T0160NB45A Text: Date:- 14 April, 2011 Data Sheet Issue:- A1 Provisional Data IGBT Gate Driver Type C0044BG400 Special Features • High reliability topology • Separate gate interface card for optimal packaging • Designed for ultra low power consumption • Balanced supply current in ON and OFF mode	Original	C0044BG400 C0044BG400 T2400GB45E T0850VB25E T0570VB25G C0044BG400SBT gate driver IGBT westcode igbt C0044BG400SBF C0044BG400SBJ T0160NB45A	PDF
IGBT presspack Abstract: IGBT 3kv high voltage 5kv igbt press-pack igbt IGBT 5kV C0030BG400 igbt 1500A C0030BG400SAC 100KV T0900TA52E Text: High Voltage IGBT Gate Driver – C0030BG400 Westcode Semiconductors Limited introduce a high voltage IGBT gate drive unit GDU designed to complement our range of high voltage Press-Pack IGBTs and standard IGBT modules. The device, known as C0030BG400, is a single	Original	C0030BG400 C0030BG400, 100kV/ IGBT presspack IGBT 3kv high voltage 5kv igbt press-pack igbt IGBT 5kV C0030BG400 igbt 1500A C0030BG400SAC 100KV T0900TA52E	PDF
calculation of IGBT snubber Abstract: abb press-pack igbt IEGT press-pack igbt IEGT presspack McMurray 6.5kV IGBT GTO 4.5kv press-pack iegt IGBT 3.3KV ABB Text: New family of 4.5kV press-pack IGBTs. Positive development in power electronics New family of 4.5kV Press-pack IGBTs F. Wakeman, G. Li, A. Golland Westcode Semiconductors Ltd, Langley Park, Chippenham, SN15 1GE, UK Tel: +44 0 1249 441122, e-mail: [email protected]	Original	EPE99, T0900TA52E calculation of IGBT snubber abb press-pack igbt IEGT press-pack igbt IEGT presspack McMurray 6.5kV IGBT GTO 4.5kv press-pack iegt IGBT 3.3KV ABB	PDF
intel i7 processor mtbf Abstract: intel core i7 processor mtbf intel core i7-2670qm Text: Toucan-QM57 COM Express Module Intel Core i7 Processor Features Intel Core i7 Processor, 2.53 GHz max. 4 GB DDR3 ECC RAM maximum. Supports ruggedized XR-DIMM™ modules. 2 DisplayPorts, LVDS dual channel 1 x Gigabit LAN 8 x USB 2.0 host ports 4 x SATA with RAID support	Original	Toucan-QM57 620UE, i7-610E: DDR3-106 D-68163 intel i7 processor mtbf intel core i7 processor mtbf intel core i7-2670qm	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
full bridge igbt induction heating generator Abstract: transistor x112 WESTCODE catalog 100-12E8 2-IAO-QMC-01001 IGBT ac switch in SSR IGBT D-Series IGCT 4.5kv ixys vuo 52 input id MITA15WB1200TMH Text: P R O D U C T S E L E C T O R G U I D E IGBT & Rectifier Modules M A Y 2 0 0 7 Selector Guide incl.: Product Overview Tables Application Overview Technology Overview MiniPack 2 NEW Press-Pack IGBTs POWER DEVICES Power MOSFET Discreets RF Power MOSFETs IGBT Discreets	Original		PDF
C0044BG400 Abstract: T0500NB25E Text: Date:- 14 April, 2011 Data Sheet Issue:- A1 Provisional Data IGBT Gate Driver Type C0044BG400 Special Features • High reliability topology • Separate gate interface card for optimal packaging • Designed for ultra low power consumption • Balanced supply current in ON and OFF mode	Original	C0044BG400 swi85 C0044BG400 T0500NB25E	PDF

93-5266 Abstract: transistor t09 Text: Tape Information Vishay Siliconix MLP 6 x 6 CARRIER TAPE + 0.1 Ø 1.5 - 0.0 12.00 Ø 1.50 min. 2.00 ± 0.10 see note 3 0.30 ± 0.05 1.75 ± 10 4.00 see note 1 A R 0.3 max. 7.5 ± 0.1 see note 3 Bo 16.0 ± 0.3 A Ko Ao 0.25 Section A-A Ao = 6.30 R 0.25 Bo = 6.30	Original	T09-0040-Rev. 23-Feb-09 0040-Rev. 93-5266 transistor t09	PDF
C0030BG400 Abstract: T0900EA45A T2400GA45E T0850 igbt failure T0800TA52E T0500NA25E T2400GA45 T1800GA T0850TA52B Text: Date:- 11 May, 2007 Data Sheet Issue:- 4 Provisional Data IGBT Gate Driver Type C0030BG400 Absolute Maximum Ratings Ratings VDD MIN. Supply voltage referred to ground IPopto Logic input optical IGP Peak gate current PO Average output power VOP Operating voltage	Original	C0030BG400 voltage595 C0030BG400 T0900EA45A T2400GA45E T0850 igbt failure T0800TA52E T0500NA25E T2400GA45 T1800GA T0850TA52B	PDF
IGBT DRIVER SCHEMATIC Abstract: IGBT failure IGBT 4000V T2400GA45E Zener ZPD 47K potentiometer T0850TA52B IGBT driver 4000V C0030CG400 igBT gate driver Text: WESTCODE An Date:- 19 Mar, 2008 Data Sheet Issue:- 1 IXYS Company Provisional Data IGBT Gate Driver with Two Synchronous Outputs Type C0030CG400 Absolute Maximum Ratings Ratings VDD Supply voltage referred to ground MIN. MAX. UNITS 14 16 VDC IPopto Logic input optical	Original	C0030CG400 C0030CG400 IGBT DRIVER SCHEMATIC IGBT failure IGBT 4000V T2400GA45E Zener ZPD 47K potentiometer T0850TA52B IGBT driver 4000V igBT gate driver	PDF
igbt circuit for induction melting Abstract: TX116TA17E McMurray induction melting IGBT presspack T180 T2400GA45E tx116 snubbers Text: An □ IX VS Company As a pioneer of press-pack Insulated Gate Bi-polar Transistor technology W estcode is able to offer a range of class leading devices with voltage ratings of 2.5 kV 1.25 kV DC link , 4.5 kV (2.8 kV DC link) and 1.7 kV currently in development.	OCR Scan	D-68623 igbt circuit for induction melting TX116TA17E McMurray induction melting IGBT presspack T180 T2400GA45E tx116 snubbers	PDF
m60013 Abstract: M60016 m60011 M60014 z46n M60030 M60024 Z24N M60012 m60043 Text: A m its u b is h i CMOS GATE ARRAYS ELECTRONIC DEVICE GROUP Mitsubishi CMOS Gate Arrays INTRODUCTION Mitsubishi offers three fami lies of CMOS gate arrays: 1.0 /im, 1.3 /j.m, and 2.0 ji.m, with usable gates ranging from 200 to 35,000. The 1.0 and 1.3 p.m devices are	OCR Scan	MDS-GA-11-90-RK m60013 M60016 m60011 M60014 z46n M60030 M60024 Z24N M60012 m60043	PDF
Untitled Abstract: No abstract text available Text: VTS 80, 82, 85 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION T h is series of p la n a r P on M large a rea silicon p ho todiodes is characterized tor use in the photovoltaic (unbiased) m o de . Their excellent speed and broadband sensitivity m akes them	OCR Scan	T0900	PDF

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T0900 Search Results

T0900 Price and Stock

Samtec Inc IDMD-14-T-09.00

Samtec Inc IDMD-12-T-09.00

Samtec Inc IDMD-25-T-09.00

Samtec Inc IDMS-11-T-09.00

Samtec Inc IDMS-05-T-09.00

T0900 Datasheets Context Search

T0900EA45A

MJ 5030

Untitled

Untitled

T0900EB

press-pack igbt

the calculation of the power dissipation for the igbt and the inverse diode in circuits

C0044BG400

IGBT presspack

calculation of IGBT snubber

intel i7 processor mtbf

7N60B equivalent

full bridge igbt induction heating generator

C0044BG400

93-5266

C0030BG400

IGBT DRIVER SCHEMATIC

igbt circuit for induction melting

m60013

Untitled