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    T1P32B Search Results

    T1P32B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    T1P32B Continental Device India Semiconductor Device Data Book 1996 Scan PDF

    T1P32B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T1P42C

    Abstract: T1P-42C 53a33 2sb85 T1P42A T1P32B T1P32A
    Text: POWER PACKAGE TRANSISTORS PNP M axim um R atin gs E lectrical C h aracte ristics VCE0 v EBO PD 'CBO « v CB (V) (V) (W) (V) Un Mn Mn a Tc=25°C MJE350T 300 300 3 21 100 300 30 240 0.05 10 2SA940 150 150 5 25 10 120 40 140 0.50 10 1.5 BD240C 115 100 5 30


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    PDF MJE350T 2SA940 BD240C BD242C 2SB856A 2SB856C BD242 BD244 TIP32 TIP42 T1P42C T1P-42C 53a33 2sb85 T1P42A T1P32B T1P32A

    TIP31AF

    Abstract: TIP31BF TIP31CF TIP31DF TIP31F TIP32BF TIP32DF TIP32F
    Text: TIP32F; 32AF TIP32BF; 32CF TIP32DF SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors, each in a SOT186 envelope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed


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    PDF TIP32F; TIP32BF; TIP32DF OT186 TIP31F, TIP31AF, TIP31BF, TIP31CF TIP31DF. TIP32F TIP31AF TIP31BF TIP31DF TIP31F TIP32BF TIP32DF

    Untitled

    Abstract: No abstract text available
    Text: TO-220 Power Package Transistors PNP Electrical Characteristics (Ta=25 C. Unless Otherwise Specified) Maximum Ratings Type No. TIP117 V C80 V CEO ^EBO (V) Min (V) Min (V) Min 100 100 5 pc (W) @Tc=25“c 50 <c (A) 2 *C80 (pA) Max 1000 @ (V) V.ÍS V CE (mA)


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    PDF O-220 TIP117 IP125 TIP126 TIP32 T1P32B TIP42

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    PDF

    1n52408

    Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
    Text: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which


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    PDF 301PT1115 302PT1115 303PT1115 311PT1110 312PTI110 319PTI110 327PTI110 351PT1115 353PT1115 1n52408 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC

    T1P127

    Abstract: T1P42C TIP3iC T1P-127 MJE350T 2SA940 BD240C BD242B BD242C MJE2S55T
    Text: PO W ER P A C K A G E T R A N SIST O R S PNP M a x im u m R a t in g s Typ» No. VcBO Electrical C h a ra c te ris tic s « vCB « lc 4 VCE 00 hin VCE0 (V) Mn MJE350T 300 300 3 21 100 300 30 240 0.05 10 2SA940 150 150 5 25 10 120 40 140 0.50 10 1.5 BD240C


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    PDF MJE350T 2SA940 BD240C BD242C BD244C 2SB856 2SB856A 2SB856C BD242 BD244 T1P127 T1P42C TIP3iC T1P-127 BD242B MJE2S55T

    TIp328

    Abstract: TIP31 PNP Transistor T1P32A
    Text: TIP32, TIP32A,TtP32B, TIP32C PNP SILICON POWER TRANSISTORS C o p y right 1997, Pow er Innovations Limited, U K • Designed tor Complementary Use with the TIP31 Series • 40 W at 25°C Case Temperature • 3 A Continuous Collector Current • 5 A Peak Collector Current


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    PDF TIP32, TIP32A TtP32B, TIP32C TIP31 O-220 TIP32 TIP32B TIp328 TIP31 PNP Transistor T1P32A

    T1P32B

    Abstract: No abstract text available
    Text: ^ 33- H Power Transistors TIP32, TIP32A, TIP32B, TIP32C HARRIS SEMICOND SECTOR File N um ber 27E D H 4302571 0050344 987 2 • HAS Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors For Power-Am plifier and High-Speed-Switching Applications Fea tu re s: ■


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    PDF TIP32, TIP32A, TIP32B, TIP32C TIP32B. TIP32C. T1P32B

    TIP32AF

    Abstract: TIP32DF TIP31AF TIP31BF TIP31CF TIP31F TIP32BF TIP32F 32-AF
    Text: TIP32F; 32 A F TIP32BF; 32CF TIP32DF PHILIPS INTERNATIONAL SbE D • 7110a2b 0 0 4 3 ^ 0 210 M P H I N T - 3 3 - 1 7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base.


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    PDF TIP32F; TIP32BF; TIP32DF 711002b OT186 TIP31F, TIP31AF, TIP31BF, TIP31CF andTIP31DF. TIP32AF TIP32DF TIP31AF TIP31BF TIP31F TIP32BF TIP32F 32-AF

    MJE520

    Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
    Text: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic


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    PDF -204AA -204AE T0-204A 97A-02 O-205AD BUS51 BUV21 BUV11 2N6249 BUX41 MJE520 bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u