T3115 Search Results

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Part	ECAD Model	Manufacturer	Description	Download	Buy
CMT3-11.5-6L		Coilcraft Inc	Single Phase EMI Filter, ROHS COMPLIANT PACKAGE-4

T3115 Price and Stock

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NXP Semiconductors AFT31150NR5 RF MOSFET LDMOS 32V OM780-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AFT31150NR5	Digi-Reel			1	1 $238.2 10 $238.2 100 $238.2 1000 $238.2 10000 $238.2	Buy Now
	AFT31150NR5	Reel			50	1 - 10 - 100 $190.4358 1000 $190.4358 10000 $190.4358	Buy Now
	AFT31150NR5	Cut Tape			1	1 $238.2 10 $238.2 100 $238.2 1000 $238.2 10000 $238.2	Buy Now
Avnet Americas	AFT31150NR5	Reel		10 Weeks	50	1 - 10 - 100 $177.50902 1000 $165.21992 10000 $165.21992	Buy Now
Mouser Electronics	AFT31150NR5					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	AFT31150NR5	Cut Tape			1	1 $185.14 10 $185.14 100 $185.14 1000 $185.14 10000 $185.14	Buy Now
	AFT31150NR5	Reel			50	1 - 10 - 100 $178.88 1000 $178.88 10000 $178.88	Buy Now
Richardson RFPD	AFT31150NR5				50	1 - 10 - 100 $187.7 1000 $187.7 10000 $187.7	Buy Now

Avnet Silica	AFT31150NR5			12 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	AFT31150NR5			12 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Fix Supply ZUSA-HT-3115 Polyester Braid Reinforced FDA S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ZUSA-HT-3115	Bulk			1	1 $221.46 10 $221.46 100 $221.46 1000 $221.46 10000 $221.46	Buy Now
Omega Engineering WT-3115 5 M/S CLOSED LOOP BENCHTOP WIND TUNNEL W/ 30.5"L X 10.2"W X 4.5"D TEST CHAMBER - Bulk (Alt: WT-3115)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	WT-3115	Bulk		14 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	WT-3115	Bulk			1	1 $53290.85 10 $53290.85 100 $53290.85 1000 $53290.85 10000 $53290.85	Buy Now
Bivar Inc MLPS-RT-3-1105-00-0500-0000-D LED Light Pipes
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	MLPS-RT-3-1105-00-0500-0000-D					1 - 10 - 100 $56.37 1000 $56.37 10000 $56.37	Get Quote
TE Connectivity 1SET311581R0000 M8-Ms-4P-M8-Fs-Pur-5.0 \|Te Connectivity 1SET311581R0000
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	1SET311581R0000	Bulk	31		4	1 $27.52 10 $27.52 100 $27.52 1000 $27.52 10000 $27.52	Buy Now
IBS Electronics	1SET311581R0000		31		4	1 - 10 $20.364 100 $18.852 1000 $18.852 10000 $18.852	Buy Now
Master Electronics	1SET311581R0000					1 $41.06 10 $36.63 100 $32.62 1000 $31.27 10000 $31.27	Buy Now
Sager	1SET311581R0000				16	1 - 10 - 100 $30.53 1000 $30.53 10000 $30.53	Buy Now

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T3115 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TAIMAG HD 081 A Abstract: ce-0702 TAIMAG HA 003 1C-8100 ALC660 CE-0703 0845a asus sw3205 R3627 Text: 5 4 3 2 1 G1S: MEROM/965-PM/ICH8-M/NB8P-GS BLOCK DIAGRAM CLOCK GEN CK505 ICS9LPR363CGLF-T D Merom CPU FAN + THERMAL SENSOR 478B uFCPGA VRAM CH.C GDDR3 2 LVDS PAGE 45 PAGE 46 PAGE 50 FSB 800 MHz 136 FBGA PAGE 72 NVIDIA NB8P-GS CRT PAGE 3-6 VRAM CH.A GDDR3 2	Original	MEROM/965-PM/ICH8-M/NB8P-GS CK505) ICS9LPR363CGLF-T 965PM 667MHz RTL8111B ISL6227 FDS2501 TPS51116 MAX1844 TAIMAG HD 081 A ce-0702 TAIMAG HA 003 1C-8100 ALC660 CE-0703 0845a asus sw3205 R3627	PDF
asus F3J inverter Abstract: T3509 schematic asus f3j inverter ALC660 asus f3j c2406 diode R5538D001 asus F3J Power inverter C2407 ASUS Text: A B C D E F2J SCHEMATIC R11 ER Content PAGE 1 2 3 4 PAGE SYSTEM PAGE REF. 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 YONAH CPU (1) YONAH CPU (2) CPU CAP/THERMAL SENSOR CLOCK GEN.	Original	RTL8111B asus F3J inverter T3509 schematic asus f3j inverter ALC660 asus f3j c2406 diode R5538D001 asus F3J Power inverter C2407 ASUS	PDF
Untitled Abstract: No abstract text available Text: II SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a microminiature plastic envelope, intended for applications in thick and thin-film circuits such as self-oscillating mixer in u.h.f. tuners in conjunction with bipolar transistors or with M O S fets.	OCR Scan	BF569 T-31-15	PDF
BFX89 Abstract: case BFX89 transistor IR 652 P Text: N AMER P H I L I P S / D I S C R E T E 25E D • b tiS 3 T 3 1 0 0 1 flE 2 3 ■ BFX89 . 'T -S I-iÇ ' N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the case. The transistor has a low noise, a very high power gain and good intermodulation properties.	OCR Scan	bbS3T31 BFX89 7Z08812 7Z08857 7Z08814 T-37-15 7Z08815 BFX89 case BFX89 transistor IR 652 P	PDF
BF569 Abstract: sot-23 MARKING CODE ZA Self-Oscillating mixer transistor 359 A k Text: SILICON PLANAR EPITAXIAL TRA N SISTO R P-N-P transistor in a microminiature plastic envelope, intended for applications in thick and thin-film circuits such as self-oscillating mixer in u.h.f. tuners in conjunction with bipolar transistors or with M O S fets.	OCR Scan	GD1S712 BF569 OT-23 BF569 T-31-15 7Z84416 sot-23 MARKING CODE ZA Self-Oscillating mixer transistor 359 A k	PDF
BFG90A Abstract: BFG51 Q017b BFG90 SOT-103 SOT103 transistor BT 136 Text: N AMER PHILIPS/DISCRETE 25 E bt.53131 Q Q 1 7 t 7 Î D Q • BFG51 T *- 31- I S~ P-N-P 2 GHz W IDEBAND TRANSISTOR P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in C A T V and M A T V systems, up to 2 GHz.	OCR Scan	QQ17t73i BFG51 OT-103) BFG90A. 7Z94139 bh53131 0Q17b77 BFG90A BFG51 Q017b BFG90 SOT-103 SOT103 transistor BT 136	PDF
K 3115 Abstract: transistor k30 KSC3125 KSC388 PC G 3115 samsung tv A12W k20a samsung tv test FC Text: SAMSUNG SEMICONDUCTOR INC KSC3125 14E D J ? cl b m 4 a OOO^^S 1 NPN EPITAXIAL SILICON TRANSISTOR T-31-1B TV FINAL PICTURE AMPLIFIER APPLICATION SOT-23 ABSOLUTE MAXIMUM RATINGS T,=25°C Characteristic Collector-Base Voltage Cottector-Emitter Voltage Emitter-Base Voltage	OCR Scan	KSC3125 T-31-15 KSC388 OT-23 K 3115 transistor k30 PC G 3115 samsung tv A12W k20a samsung tv test FC	PDF
2SC1809 Abstract: LB-10N 2SC 374 Text: — - 7= ?/-/£“ NPN ‘> ' j 3 > h 7 > V ^ ^ « a a Ü Î i f f l / R F Amplifier Epitaxial Planar NPN Silicon Transistor • W ë ’+ jiB /D Im e n e lc m s Unil : mm • «* 1) fj=6 00 M H z Typ<al 1 m A )fc » v \ 2) C«b^1.4pF Typ. (àt 6V)	OCR Scan	600MHz 500MHz 9C-43 2SC1809 T-31-15 -10CMHÂ 2SC1809 LB-10N 2SC 374	PDF
BFR99 Abstract: BFR99 transistor Text: 3DE D F I • 7 e15,ì537 QQaQ^bl H ■ T^3U5~ SGS-THOMSON iLieraKS BFR99 S 6 S-THOMSON DESCRIPTION The BFR99 is a silicon planar epitaxial PNP transis tor in Jedec TO-72 metal case, particularly designed for wide band common-emitter linear amplifier appli	OCR Scan	BFR99 300ns, BFR99 transistor	PDF
T3115 Abstract: No abstract text available Text: MOTOROLA SC -CXSTRS/R DËT\|b3b7a5L\| □□aaobh F> 6 3 6 7 2 5 4 MOTOROLA SC 96D Ö 206 6 X S T R S /R F D T-31-15 M A X I M U M R A T IN G S R ating Sym bol V alue Unit MMBTH81 VCEO 20 Vdc Coilector-Base V oltage VcBO 20 Vdc Em itter-Base V oltage Ve b O	OCR Scan	T-31-15 MMBTH81 OT-23 O-236AA/AB) T3115	PDF
TO-236-AA Abstract: No abstract text available Text: 3>F\|b3L.75S4 O D Û S Q h S S M O T O R O L A SC -CXSTRS/R F> 6367254 » M OT O RO L A S C XSTRS/R ' 96D 8 2 0 6 5 . _ F * T-31-15 M À XIM U M RATINGS Sym bol Value Unit Collector-Emitter Voltage VcEO 30 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage	OCR Scan	T-31-15 MMBTH24 OT-23 O-236AA/AB) TO-236-AA	PDF
Untitled Abstract: No abstract text available Text: ROHM CO LTD IRHn 40E D . h 7 > V 7, $ / T ransistors 2SC1809 - 7 = j / - / r 2SC1! y y ^ > h 7 > y X $ i ^ ü ^ i i Î i Æ / R F Am plifier Epitaxial Planar N P N Silicon Transistor •	OCR Scan	2SC1809 500MHz 500MHz	PDF
BFG51 Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bb53l31 Q017b7i 0 BFG51 H5E D J T - S I ~ I S~ P-N-P 2 GHz WIDEBAND TRANSISTOR •• » P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in CATV and M A TV systems, up to 2 GHz.	OCR Scan	bb53l31 Q017b7i BFG51 OT-103) BFG90A. BFG51	PDF
1HT251 Abstract: 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313 Text: WmmËÊÊm W h A iW f W * i rïS >••> ro s ît. ;<W«a 7 mm m$m 15ÎÏ3 Sktófefc?¿feS 11181 immm SI f ' ■ ' ' ' : m S ËÊB B S M M CnPABOHHMK nonynpoBQQHHKOBbiE nPHBOPbl TPAH3MCTOPbl MAflOI/ì MOLUHOCTM n O f l PEA A K L4H EPÌ A . B rO flO M E A O B A	OCR Scan	FojO33 KT357 KT358 KT361 KT363 KT364-2 KT366 KT368 KT369 KT369-1 1HT251 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313	PDF

K 3115 Abstract: transistor marking code 325 bf550R transistor jt BF550 PHILIPS 1980 MARKING SA transistor transistor marking SA Text: I N AMER PH IL bbS3T31 001S7QÔ =1 IP S/»IS CRETE_ O b E ^ BF550 3 ¡ - 15- r - SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor Is primarily intended for use in i.f. detection applications.	OCR Scan	001S7QÃ BF550 bbS3T31 0Q15710 BF550 T-31-15 K 3115 transistor marking code 325 bf550R transistor jt PHILIPS 1980 MARKING SA transistor transistor marking SA	PDF
2n3600 Abstract: 2N918 sy 171 BFX73 19S8 BFX73-2N918 G2053 Text: „ S C S -T H O M S O N B FX 73-2N 918 fc7 # 2 N 3 6 0 0 S G S - T H 0MS0N HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS The BFX73, 2N918 and 2N3600 are silicon planar epitaxial NPN transistors in Jedec TO-72 metal case. They are designed for low-noise VHF amplifiers, os	OCR Scan	OQBCHfl11) BFX73-2N918 2N3600 BFX73, 2N918 2N3600 G-20SJ G-2053 2e1237 BFX73-2N918-2N3600 sy 171 BFX73 19S8 BFX73-2N918 G2053	PDF
PSD3-20 Abstract: PSD5-28 Text: • ■ ■ Uliw Split Bobbin Power Transformers 115V and 115/230V 50/60Hz T31 and T32 T31 Series:Single 115V Primary T32 SeriesiDual 115/230 V Primary Single Dual Secondary Connections Primary Primary Size Parallel Series P/N P/N VA VAC Arms VAC Arms T31-1-10	OCR Scan	115/230V 50/60Hz T31-1-10 T31-2-10 T31-6-10 T31-12-10 T32-1-10 T32-2-10 T32-6-10 T32-12-10 PSD3-20 PSD5-28	PDF
I12C Abstract: KSC2758 samsung tuner Text: SAMSUNG SEM ICON D UCTOR . INC KSC2758 14E D \| T 'lb M m a OOObTSS fl \| NPN EPITAXIAL SILICO N TRANSISTOR ' RF. MIXER FOR UHF TUNER T-31-15 SO T-23 • HIGH POWER GAIN TYP. 17d8 • LOW NF TYP. 2.8dB ABSOLUTE MAXIMUM RATINGS T,=25°C Characteristic Colector-Base Voltage	OCR Scan	71b4ma KSC2758 T-31-15 OT-23 600MH 400MHz I12C samsung tuner	PDF
FL 210 transistor Abstract: G1203 KSC3120 samsung tv Text: SAMSUNG SEMICONDUCTOR INC KSC3120 14E D \| 7^4142 0001^ 73 S J .-3 / \| NPN EPITAXIAL SILICON TRANSISTOR MIXER FOR UHF TV TUNER Gc*=17c»B TYP C =0.6pF (TYP) SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Cottector-Emitter Voltage	OCR Scan	KSC3120 OT-23 Vcc-10V FL 210 transistor G1203 samsung tv	PDF
BH RT transistor Abstract: SOT-23 marking a8 KSC2757 N1000 Text: S A M S U N G S E M I C O ND UC TO R INC KSC2757 14E D \| ?Tb4142 OG Ob 'm T fi \| NPN EPITAXIAL SILICO N TRANSISTOR T-31-15 MIXER OSCILLATOR FOR VHF TUNER SOT-23 HIGH fT fT1100MHz lyp. ABSOLUTE MAXIMUM RATINGS (T,=25°C) Characteristic Symbol Collector-Base Voltage	OCR Scan	b4142 KSC2757 1100MHz T-31-15 OT-23 f-1000MHz fc-10m> N1000 BH RT transistor SOT-23 marking a8	PDF
D0312 Abstract: HA20 T3115 Text: 3QE D • o o a i s s 6 7 m s f Z 7 S G S -T H O M S O N “ 7# [f [L IO T s« S T T 2 N5179 S-THOMSON VHF/UHF AMPLIFIER DESC RIPTIO N The 2N5179 Is a silicon planar epitaxial NPN tran sistor in Jedec TO-72 metal case, intended for lownoise tuned-amplifier and converter applications up	OCR Scan	N5179 2N5179 D0312 HA20 T3115	PDF
Untitled Abstract: No abstract text available Text: I 1 , 1. t N AMER PHILIPS/DISCRETE QbE D bb53T31 0015704 1 • BF536 SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature plastic envelope. Primarily intended for use as mixer in v.h.f. tuners. Also suitable as r.f. amplifier and oscillator in f.m. tuners.	OCR Scan	bb53T31 BF536 001570b T-31-15	PDF
BFR99A Abstract: No abstract text available Text: 3QE D • 715*1237 G 0 3 0 U 3 fi ■ ^ £ Z 7 S G S -T H O M S O N ^ 7 # _ ^ B @ \|L i0 r a M a 0 i S 6 S-THOMSON — B FR 9 9 A WIDE BAND VHF/UHF AMPLIFIER ■ SILICON PLANAR EPITAXAL TRANSISTOR ■ TO -72 M ETAL CASE ■ VERY LO W NOISE A P P L IC A T IO N S :	OCR Scan	BRF99A BFR99A 00301bb T-31-15 G-1678 G-1090 100mV Q03Q1b7 BFR99A	PDF
BFY90 PHILIPS Abstract: BFY90 ic 1014b PHILIPS WIDE BAND AMPLIFIERS 3I15 enamelled copper wire Text: P hilips Sem iconductors Product specification NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE BFY90 T> 713.0a2b Dü4ti04S D24 • P H IN PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the	OCR Scan	BFY90 711002b 004bD4^ MBA383 BFY90 PHILIPS BFY90 ic 1014b PHILIPS WIDE BAND AMPLIFIERS 3I15 enamelled copper wire	PDF

T3115 Search Results

T3115 Result Highlights (1)

T3115 Price and Stock

NXP Semiconductors AFT31150NR5

Fix Supply ZUSA-HT-3115

Omega Engineering WT-3115

Bivar Inc MLPS-RT-3-1105-00-0500-0000-D

TE Connectivity 1SET311581R0000

T3115 Datasheets Context Search

TAIMAG HD 081 A

asus F3J inverter

Untitled

BFX89

BF569

BFG90A

K 3115

2SC1809

BFR99

T3115

TO-236-AA

Untitled

BFG51

1HT251

K 3115

2n3600

PSD3-20

I12C

FL 210 transistor

BH RT transistor

D0312

Untitled

BFR99A

BFY90 PHILIPS