VGT300039
Abstract: PT6045 VGT300022 PT6005
Text: V L S I TECHNOLOGY INC 47 E D T3flfl34? n o n a T T a V L S I Tech n o lo gy , in c . 3 VTI T -H Z -d -C R VGT350/VGT353 LIBRARY I.O-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology
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T3flfl34?
VGT350/VGT353
85-micron
VGT350/353
VGT300039
PT6045
VGT300022
PT6005
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VL86C110
Abstract: video processor acorn
Text: VLSI TECHNOLOGY INC Tñ DE] T3flñ347 DDDlt.4ci bf V L S I Technology , in c . T - l 5 -3 1 -v i VL86C110 RISC MEMORY CONTROLLER MEMC FEATURES DESCRIPTION • Drives up to 32 standard dynamic RA M s giving 4M bytes of real memory with 1M bit devices The memory controller (MEMC) acts as
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VL86C110
VL86C110
VL86C110-08LC
video processor acorn
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i8237A
Abstract: i8237 i8259a 68C45 Z80 CRT controller micron cmos 1988 interface 8254 with 8086 8086 structure block diagram of 8086 and 8088 M85C30
Text: V L S I TECHNOLOGY INC IflE D H P V L S I T ech n o lo gy, inc. • T3flfl347 0D0324L. S ■ t- ^ VMC10 AND VMC100 SERIES 2-MICRON AND 1.5 MICRON ADVANCED CMOS MEGACELL FAMILY FEATURES FAMILY DESCRIPTION ASIC COMPATIBLE • Library of m icroprocessor peripheral functions
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T3flfl347
0D0324L.
VMC10
VMC100
82C84A
82C88
VSY368C45-YYZ20
VSY382C37-YYZ20
VSY382C50-YYZ20
i8237A
i8237
i8259a
68C45
Z80 CRT controller
micron cmos 1988
interface 8254 with 8086
8086 structure
block diagram of 8086 and 8088
M85C30
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Untitled
Abstract: No abstract text available
Text: MICRON S E M I C O N D U C T O R INC b3E J> b l l l S M T OOGfllHS T3fl • MRN m l^ iic n o N 2 MEG DRAM MODULE X MT18D236 36 DRAM MODULE 2 MEG x 36 DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Comm on RA S control per side pinout in a 72-pin
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MT18D236
72-pin
024-cycle
72-Pin
DE-12)
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VY86C110
Abstract: VY86C110-12QC ARM processor Arm processor vlsi technology VY86C11012QC
Text: V L S I TECHNOLOGY INC M7E D T3flfl347 OOC^T? a VLSI T ec h n o lo g y , in c . VTI T - 5 2 -3 3 -2 1 VY 86 C 110 RISC MEMORY CONTROLLER FEATURES DESCRIPTION • Drives up to 32 standard dynamic RAMs giving 4 MBytes of real memory with 1M bit devices • Logical-to-physical address translation
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T3flfl347
000b3
VY86CI10
VY86CIIO
A25-A0
VY86C110
VY86C110-12QC
ARM processor
Arm processor vlsi technology
VY86C11012QC
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Untitled
Abstract: No abstract text available
Text: V L S I T E C H N O L O G Y INC 47E D T3flfl347 Q D a ñ ? 7 T T V L S I Tech no lo gy , in c . VTI T -V 2 -* // VSRAM 100 HIGH SPEED STATIC RAM LIBRARY FEATURES DESCRIPTION • RAM configuration up to 4K bits — word width 4 or 8 bits — word depth 128, 256 or
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T3flfl347
VSRAM00
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP n r r U U LU 2flim[]7 ODOGlb? T3fl H D I X SñE D DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 Data Sheet No.: FSDP-301-A1 'P O ' i ' l S 3 AMP FAST RECOVERY SILICON DIODES
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FSDP-301-A1
DO-27,
MIL-STD-202,
DB25/T
DB25/W
DB25P/T
DB25P/W
O-220
O-247)
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Untitled
Abstract: No abstract text available
Text: V T C INC '9 3889 29 D | T3flflci2Ii 0 0 0 1 3 0 4 V T C INC 9 9D 01304 VA2717 T ' " 7 <? - 0 7 . ¿ o DUAL HIGH-SPEED, FAST-SETTLING, HIGH OUTPUT CURRENT OPERATIONAL AMPLIFIER, A q|_S 12 SHEETS FEATURES • Fast Settling Time: ±0.1% In 150ns • High Slew Rate:.105 V/^s
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VA2717
150ns
300MHz
VA2717
DS032-5M8861
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE J> bb53131 0027554 T3fl IAPX b C b lb A SILICON PLANAR DARLINGTON TRANSISTOR P-N-P silicon planar darlington transistor in a plastic TO-92 envelope. N-P-N complement is BC517. Q U IC K R E F E R E N C E D A T A Collector-emitter voltage open base
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bb53131
BC517.
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RP300
Abstract: RP301 RP302 RP304 RP306 RP308 RP310
Text: DIOTEC ELECTRONICS CORP n U r U r L U 2flim[]7 ODOGlb? T3fl H D I X SñE D DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 Data Sheet No.: FSDP-301-A1 'P O 'i'lS 3 AMP FAST RECOVERY SILICON DIODES
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FSOP-301-A1
DO-27,
MIL-STD-202,
DO-27
AT60Hz
30qaS
50/100ns/em
RP300
RP301
RP302
RP304
RP306
RP308
RP310
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tea 9502
Abstract: Electronic Arrays Inc T3FL 9502c inverter /Invertron Vti
Text: V L S I TECHNOLOGY I NC 72 dË| T3flfl3M7 D D D 0 4 2 D 5 | p ^~~T-42-ll-09 % VGC SERIES ADVANCED 2-MICRON CMOS GATE ARRAY FAMILY Q FEATURES • 500,900,1200,1900,2400,3200, 4000,6000 and 8000 gates. • True 2-micion silicon gate CMOS technology • High performance—
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T-42-ll-09
VGC0500)
tea 9502
Electronic Arrays Inc
T3FL
9502c
inverter /Invertron Vti
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Untitled
Abstract: No abstract text available
Text: V^L S I TECHNOLOGY INC bDE V L S I T e c h n o lo g y in c. D • T3flfl347 000R5S3 flSfl * V T I -t~ is -p VP15323TSPP TRIPLE SONET STS PAYLOAD PROCESSOR DESIGNER'S GUIDE August 1992 V L S I TECHNOLOGY INC bDE ]> ■ ^360347 G G G C] 2 2 4 7=14 ■ VTI Ü P V L S I T e c h n o l o g y , in c .
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T3flfl347
000R5S3
VP15323TSPP
VP15323
VP15323-QC
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VTA1011
Abstract: VTA1012 VTA1013
Text: S Id E D 3 0 3 0 b D cì D Q O L l ^ .050" NPN Photodarlingtons T3fl VCT V T A 1 0 1 1 , 12, 13 TO-46 Flat Window Package E fi & G VACTEC PACKAGE DIMENSIONS inch mm •SO («2.7) .206 (5.23) .195 <4 95) (0.64) (0.38) &_ (2.54) i .188 (4.78) .178 (4.52) (0.51)
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VTA1011,
T0-46
100/iA
4001c
VTA1011
VTA1012
VTA1013
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VTA1011
Abstract: VTA1012 VTA1013
Text: S Id E D 3 0 3 0 b D cì D Q O L l ^ .050" NPN Photodarlingtons T3fl VCT V T A 1 0 1 1 , 12, 13 TO-46 Flat Window Package E fi & G VACTEC PACKAGE DIMENSIONS inch mm •SO («2.7) .206 (5.23) .195 <4 95) (0.64) (0.38) &_ (2.54) i .188 (4.78) .178 (4.52) (0.51)
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VTA1011,
T0-46
100/iA
4001c
VTA1011
VTA1012
VTA1013
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keyboard ic
Abstract: RASH PCD3331-1P PCD3331-1T S020
Text: 7 1 1 0 0 2 b 00 54 7 0 S T3fl H P H I N Philips Semiconductors Multistandard pulse/tone dialler/ringer _ IP S P H IL Objective specification PCD3331-1 bOE ]> INTERNATIONAL 75-0 7 ' 07 FEATURES GENERAL DESCRIPTION • Pulse and DTMF mixed mode dialling The PCD3331-1 is a mixed-mode multistandard
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711002b
00547GS
PCD3331-1
PCD3331-1
UEA664
keyboard ic
RASH
PCD3331-1P
PCD3331-1T
S020
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17-4 bh curve
Abstract: 12x4 tube T0247 T0247 package T0247AB RP300 RP301 RP302 RP304 RP306
Text: DIOTEC ELECTRONICS CORP 2flim[]7 ODOGlb? T3fl H D I X SñE D DIOTEC ELECTRONICS CORP. n r r UULU Data Sheet No.: FSDP-301 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 'P O 'i 'l S 3 AMP FAST RECOVERY SILICON DIODES VOLTAGE RANGE
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FSOP-301-A1
DO-27,
MIL-STD-202,
DO-27
DB25/T
DB25/W
DB25P/T
DB25P/W
T0-220
O-247)
17-4 bh curve
12x4 tube
T0247
T0247 package
T0247AB
RP300
RP301
RP302
RP304
RP306
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DS34C86TM
Abstract: b699 diagram pulsa
Text: NATL S E M I C O N D MEMORY böE D bSOHSb □DbRQ'iD T3fl NSC3 DS34C86T National ÆM Sem iconductor DS34C86T Quad CMOS Differential Line Receiver General Description Features The DS34C86T is a quad differential line receiver designed to meet the RS-422, RS-423, and Federal Standards 1020
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DS34C86T
DS34C86T
RS-422,
RS-423,
1N91S
TL/F/8699-9
TL/F/B699-10
DS34C86TM
b699
diagram pulsa
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Untitled
Abstract: No abstract text available
Text: I SANKEN ELECTRIC CO LTD S5E D STA322A • 7cn D 7 4 1 DDOllDb T3fl * S A K J Silicon PNP Epitaxial Planar ■M axim um Ratings oa=2 5 C liî ï i f l is? » r lï! 1: Collector-to-Base Voltage VCBO -5 0 V Collector-to-Emitter Voltage VCEO -5 0 V Emitter-to-Base Voltage
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STA322A
STA300
STA400
45max
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Untitled
Abstract: No abstract text available
Text: DAICO INDUSTRIES INC blE D • SbDMTSD DDDlbTfl T3fl ■ DAI FEATURES ■ 20- 700 MHz ■ 0.5 dB Insertion Loss ■ TTL Driver ■ ■ Small TO-8 Package Low Cost ■ Cascadable Building Block For Attenuators And Phase Shifters TEST CONFIGURATION Y EXTERNAL BLOCKING
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BC516
Abstract: BC517
Text: I I N AMER PHILIPS/ DISCRET E b^E D • ^53^31 GÜ27551* T3fl H A P X II b U b lb SILICON PLANAR DARLINGTON TRANSISTOR P-N-P silicon planar d a rlin g to n tran sisto r in a plastic TO -92 envelope. N-P-N co m plem ent is BC517. Q U IC K R E F E R E N C E D A T A
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BC517.
emitt00
BC516
BC517
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PT6042
Abstract: No abstract text available
Text: V L S I TECHNOLOGY I NC H7E J> T3flfl347 D a 0 ñ ñ 2 2 7 V L S I Tech n o lo gy , in c . - r - m PRELIMINARY VTI - m VSC450 SERIES O.8-MICRON HIGH-PERFORMANCE STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon
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T3flfl347
VSC450
T-42-41
PT6042
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC514800AJ/AZ/AFT-70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJ/AZ/AFT is the new generation dynam ic RAM organized 524,288 word by 8 bit. The TC514800A J/AZ/AFT utilizes T oshiba’s CM OS silicon gate process technology as w ell as advanced circuit
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TC514800AJ/AZ/AFT-70/80
TC514800AJ/AZ/AFT
TC514800A
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Untitled
Abstract: No abstract text available
Text: ¿ilimMtanS' SSI 32R2420 5V, 4-Channel 2-Terminal Read/Write Device A TDK Group/Company June 1994 DESCRIPTION FEATURES The SSI 32R2420 is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. It provides a low noise read amplifier, write
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32R2420
20-Lead
32R2420RIW-4CV
32R2420IW-4CV
61993Silicon
0694-rev.
DQ1243D
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DVCT-25V10
Abstract: No abstract text available
Text: VOLTAGE SENSOR H Compact & light weight H Complete isolation is provided between the voltage being sensed and the measuring circuit I I FEATURES: Fast response time H Excellent thermal characteristics I • Capable of measuring high voltage by adding external input resistance
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DVCT-25V10
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