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    T491C105K050AT Price and Stock

    KEMET Corporation T491C105K050AT

    CAP TANT 1UF 10% 50V 2312
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    DigiKey T491C105K050AT Digi-Reel 6,517 1
    • 1 $0.74
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    T491C105K050AT Cut Tape 6,517 1
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    T491C105K050AT Reel 6,500 500
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    Mouser Electronics T491C105K050AT 17,383
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    Component Electronics, Inc T491C105K050AT 42
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    KEMET Corporation T491C105K050AT7280

    CAP TANT 1UF 10% 50V 2312
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    DigiKey T491C105K050AT7280 Cut Tape 2,970 1
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    T491C105K050AT7280 Digi-Reel 2,970 1
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    KEMET Corporation T491C105K050ATAUTO

    CAP TANT 1UF 10% 50V 2312
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    DigiKey T491C105K050ATAUTO Cut Tape 1,467 1
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    T491C105K050ATAUTO Digi-Reel 1,467 1
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    Mouser Electronics T491C105K050ATAUTO 1,576
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    KEMET Corporation T491C105K050AT4118

    CAP TANT 1UF 10% 50V 2312
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    DigiKey T491C105K050AT4118 Reel 1,000
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    KEMET Corporation T491C105K050AT7622

    CAP TANT 1UF 10% 50V 2312
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    DigiKey T491C105K050AT7622 Reel 1,000
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    T491C105K050AT Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    T491C105K050AT KEMET Tantalum Capacitors, Capacitors, CAP TANT 1UF 50V 10% 2413 Original PDF
    T491C105K050AT KEMET Solid Tantalum Chip Capacitors / T491 Series - Precision Molded Chip; Capacitance [nom]: 1uF; Working Voltage (Vdc)[max]: 50V; Capacitance Tolerance: +/-10%; Dielectric: Tantalum, Solid; Lead Style: Surface-Mount Chip; Lead Dimensions: 6032-28; Termination: 100% Tin (Sn); Body Dimensions: 6.0mm x 3.2mm x 2.5mm; Temperature Range: -55C to +125C; Container: Tape & Reel; Qty per Container: 500 Original PDF
    T491C105K050AT2478 KEMET Capacitors - Tantalum Capacitors - CAP TANT 1UF 10% 50V 2312 Original PDF
    T491C105K050AT24787280 KEMET Capacitors - Tantalum Capacitors - CAP TANT 1UF 10% 50V 2312 Original PDF
    T491C105K050AT40622478 KEMET Capacitors - Tantalum Capacitors - CAP TANT 1UF 10% 50V 2312 Original PDF
    T491C105K050AT4106 KEMET Capacitors - Tantalum Capacitors - CAP TANT 1UF 10% 50V 2312 Original PDF
    T491C105K050AT4118 KEMET Capacitors - Tantalum Capacitors - CAP TANT 1UF 10% 50V 2312 Original PDF
    T491C105K050AT4153 KEMET Capacitors - Tantalum Capacitors - CAP TANT 1UF 10% 50V 2312 Original PDF
    T491C105K050AT4280 KEMET Capacitors - Tantalum Capacitors - CAP TANT 1UF 10% 50V 2312 Original PDF
    T491C105K050AT4539 KEMET Capacitors - Tantalum Capacitors - CAP TANT 1UF 10% 50V 2312 Original PDF
    T491C105K050AT4838 KEMET Capacitors - Tantalum Capacitors - CAP TANT 1UF 10% 50V 2312 Original PDF
    T491C105K050AT7280 KEMET Capacitors - Tantalum Capacitors - CAP TANT 1UF 10% 50V 2312 Original PDF
    T491C105K050AT7622 KEMET Capacitors - Tantalum Capacitors - CAP TANT 1UF 10% 50V 2312 Original PDF
    T491C105K050ATAU007280 KEMET Capacitors - Tantalum Capacitors - CAP TANT 1UF 10% 50V 2312 Original PDF
    T491C105K050ATAU04 KEMET Capacitors - Tantalum Capacitors - CAP TANT 1UF 10% 50V 2312 Original PDF
    T491C105K050ATAUTO KEMET Capacitors - Tantalum Capacitors - CAP TANT 1UF 10% 50V 2312 Original PDF
    T491C105K050ATAUTO7555 KEMET Capacitors - Tantalum Capacitors - CAP TANT 1UF 10% 50V 2312 Original PDF
    T491C105K050ATAUTO7606 KEMET Capacitors - Tantalum Capacitors - CAP TANT 1UF 10% 50V 2312 Original PDF
    T491C105K050ATC7280 KEMET CAP 1UF 50V 10% TANT SMD-6032-28 TR-13-PL SN100% Original PDF

    T491C105K050AT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    T491C105K0

    Abstract: No abstract text available
    Text: KEMET Part Number: T491C105K050ATAUTO Capacitor, tantalum, 1 uF, 6032, +/-10% Tol, 50V@85C General Information Manufacturer: KEMET Electrical Specifications Capacitance: 1 uF Voltage DC @ 85C: 50V Voltage DC @ 105C: 41.5V Voltage DC @ 125C: 33V Tolerance:


    Original     		T491C105K050ATAUTO 12ee4076-5451-48d1-bf0e-d6c706492f96 T491C105K0 PDF

    Untitled

    Abstract: No abstract text available
    Text: KEMET Part Number: T491C105K050ATAUTO Capacitor, tantalum, 1 uF, 6032, +/-10% Tol, 50V@85C General Information Manufacturer: KEMET Electrical Specifications Capacitance: 1 uF Voltage DC @ 85C: 50V Voltage DC @ 105C: 41.5V Voltage DC @ 125C: 33V Tolerance:


    Original     		T491C105K050ATAUTO PDF

    GR331

    Abstract: en220 arcotronics mkp 1.44 b3202 y2 panasonic GC 5.5v 1.0f EPOC E68 X2 CAP 220nF ±20 275V murata ARCOTRONICS MKP 1.44 7.5 arcotronics mkp 1.44 ac capacitors mkp21
    Text: An invaluable resource for buyers and engineers This particular book presents Anglia’s primary capacitor product lines sourced from eleven key suppliers. Compiled in a convenient format to assist both buyers and engineers, it provides all the essential data and part numbers to aid the


    Original     		N1200 TZ03Z2R3E169B00 TZ03Z050E169B00 TZ03Z070E169B00 TZ03Z100E169B00 TZ03T110E169B00 TZ03R200E169B00 TZ03R300E169B00 TZ03P450E169B00 GR331 en220 arcotronics mkp 1.44 b3202 y2 panasonic GC 5.5v 1.0f EPOC E68 X2 CAP 220nF ±20 275V murata ARCOTRONICS MKP 1.44 7.5 arcotronics mkp 1.44 ac capacitors mkp21 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 2, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be


    Original     		MD7P19130H MD7P19130HR3 MD7P19130HSR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev. 5,12/2010 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6P21190HR6 LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110


    Original     		MRF6P21190HR6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 1, 7/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		MRF7S21110H MRF7S21110HR3 MRF7S21110HSR3 MRF7S21110HR3 PDF

    T491C105K0

    Abstract: No abstract text available
    Text: Document Number: MRF6P21190HR6 Rev. 5,12/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6P21190HR6 LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF6P21190HR6 MRF6P21190HR6 T491C105K0 PDF

    EEEFK1H101P

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6P18190HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P18190H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		MRF6P18190H MRF6P18190HR6 EEEFK1H101P A114 A115 AN1955 C101 JESD22 MRF6P18190HR6 PDF

    mcr63

    Abstract: T491C105K050AT A114 A115 AN1955 C101 JESD22 MRF7S21110HR3 MRF7S21110HSR3 mcr63v477m
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 0, 9/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		MRF7S21110H MRF7S21110HR3 MRF7S21110HSR3 MRF7S21110HR3 mcr63 T491C105K050AT A114 A115 AN1955 C101 JESD22 MRF7S21110HSR3 mcr63v477m PDF

    MHVIC910HR2

    Abstract: MW6S010NR1 CRCW12061001FKEA ATC700A331JT150XT 1265A ATC700a FREESCALE PACKING A113 A114 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 5, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		MW6S010N MW6S010NR1 MW6S010GNR1 MHVIC910HR2 CRCW12061001FKEA ATC700A331JT150XT 1265A ATC700a FREESCALE PACKING A113 A114 AN1955 PDF

    ATC100B102JP50XT

    Abstract: nippon capacitors JESD22 MRF6P9220HR3 A114 AN1955 ATC100B101JP500XT Nippon chemi
    Text: MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 N - Channel Enhancement - Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with


    Original     		MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220HR3 20ers, MRF6P9220H ATC100B102JP50XT nippon capacitors JESD22 A114 AN1955 ATC100B101JP500XT Nippon chemi PDF

    capacitor mttf

    Abstract: T491C105K0 AN1955 MD7P19130H MD7P19130HR3 MD7P19130HSR3 GRM55DR61H106KA88B
    Text: Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 2, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be


    Original     		MD7P19130H MD7P19130HR3 MD7P19130HSR3 capacitor mttf T491C105K0 AN1955 MD7P19130H MD7P19130HSR3 GRM55DR61H106KA88B PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21110H Rev. 2, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S21110HR3 MRF7S21110HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		MRF7S21110H MRF7S21110HR3 MRF7S21110HSR3 MRF7S21110HR3 PDF

    T491A475K010AT

    Abstract: T491D686K016AT T491C106K016AT T491B226K016AT T491C105K050AT T491D335K050AT T491B156K010AT T491A225K010AT T491E477M010AT
    Text: 1798-2012.qxp:QuarkCatalogTempNew 9/18/12 2:38 PM Page 1798 Engineering Design Kits RoHS Tantalum Kits ᭤ Surface Mount Kits INTERCONNECT TEST & MEASUREMENT 21 Design Kits and Tantalum Chip Capacitors Stock No. Mfr.’s Type Capacitance Range Voltage Range


    Original     		PDF

    ATC100B101JT500XT

    Abstract: T491C105K050AT NIPPON CAPACITORS dvbt A114 A115 AN1955 C101 JESD22 MRFE6P3300HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 0, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P3300HR3 MRFE6P3300HR5 Designed for broadband commercial and industrial applications with


    Original     		MRFE6P3300H MRFE6P3300HR3 MRFE6P3300HR5 MRFE6P3300HR3 ATC100B101JT500XT T491C105K050AT NIPPON CAPACITORS dvbt A114 A115 AN1955 C101 JESD22 PDF

    UT-141A-TP

    Abstract: NIPPON CAPACITORS UT141A-TP MRFE6P3300H 863MHz dvbt 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A114
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 2, 12/2009 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance


    Original     		MRFE6P3300H MRFE6P3300HR3 UT-141A-TP NIPPON CAPACITORS UT141A-TP MRFE6P3300H 863MHz dvbt 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A114 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 2, 10/2008 MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with fre-


    Original     		MRF6P3300H MRF6P3300HR3/HR5 MRFE6P3300HR3/HR5. PCN12895 MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF6P9220H Rev. 3.1, 12/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with


    Original     		MRF6P9220H MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF6P18190H Rev. 3, 12/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF6P18190H MRF6P18190HR6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW6S010N Rev. 5, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		MW6S010N MW6S010NR1 MW6S010GNR1 PDF

    NIPPON CAPACITORS

    Abstract: A114 A115 AN1955 C101 JESD22 MRFE6P3300HR3 MRFE6P3300HR5 30C21 Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6P3300HR3 MRFE6P3300HR5 Designed for broadband commercial and industrial applications with


    Original     		MRFE6P3300H MRFE6P3300HR3 MRFE6P3300HR5 MRFE6P3300HR3 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRFE6P3300HR5 30C21 Nippon chemi PDF

    NIPPON CAPACITORS

    Abstract: A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRF5S9150HSR3 d 5287 transistor Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H - 2 Rev. 3, 3/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.


    Original     		MRF5S9150H MRF5S9150HSR3 150icers, MRF5S9150H-2 NIPPON CAPACITORS A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRF5S9150HSR3 d 5287 transistor Nippon chemi PDF

    transistor c 5287

    Abstract: NIPPON CAPACITORS A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRF5S9150HR3 d 5287 transistor
    Text: Document Number: MRF5S9150H - 1 Rev. 2, 3/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9150HR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.


    Original     		MRF5S9150H MRF5S9150HR3 MRF5S9150H-1 transistor c 5287 NIPPON CAPACITORS A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRF5S9150HR3 d 5287 transistor PDF