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    T4C400 Search Results

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    T4C400 Price and Stock

    Micron Technology Inc MT4C4007JDJ-6

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    Bristol Electronics MT4C4007JDJ-6 17,410
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    Micron Technology Inc MT4C4001JDJ6

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    Bristol Electronics MT4C4001JDJ6 1,794
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    Micron Technology Inc MT4C4001JDJ7

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    Bristol Electronics MT4C4001JDJ7 649
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    Micron Technology Inc MT4C4004JDJ-6

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    Bristol Electronics MT4C4004JDJ-6 265
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    MICRON/945 MT4C4001JZ-70

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    Bristol Electronics MT4C4001JZ-70 100
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    T4C400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT4C4001

    Abstract: mt4c4001jdc sm03b
    Text: MICRON TECHNOLOGY INC 55E D WÊ blllSHT ITT H I URN M T4C4001J DIE 1 MEG x 4 DRAM fAICRQN MILITARY DRAM DIE 1 MEG x 4 DRAM DIE FEATURES DIE OUTLINE Top View 14 13 12 11 10 15 5 4 3 2 □ □ □ □ □ □□□ □ □ □ □□□ □ DIE DATA BASE D15B


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    PDF T4C4001J 450mW 024-cycle MT4C4001 mt4c4001jdc sm03b

    Untitled

    Abstract: No abstract text available
    Text: M T4C4003J lEG X 4 DRAM M IC R O N 1 MEG DRAM X 4 DRAM DRAM STATIC COLUMN FEATURES PIN ASSIGNMENT (Top View OPTIONS 20-Pin ZIP (DC-1) (DB-2) DQ1 DQ2 WE RAS A9 MARKING • Timing 70ns access 80ns access • Packages Plastic SOJ (300 mil) Plastic ZIP (350 mil)


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    PDF T4C4003J 024-cycle 20/26-Pin 20-Pin MT4C4003J

    T4C400

    Abstract: mt4c4004jdj
    Text: M T4C4004J 1 MEG X 4 DRAM l^ldRON DRAM 1 MEG x 4 DRAM QUAD CAS PARITY, FAST PAGE MODE FEATURES _ • Four independent C A S controls, allo w ing in d ivid u al m anipulation to each of the four data In p u t/O u tp ut ports DQ1 through DQ4 . • Offers a single chip solution to byte level parity for 36bit words w hen using 1 M eg x 4 D R A M s for m emory


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    PDF T4C4004J 36bit 225mW 024-cycle MT4C4001JDJ MT4C4004JDJ MT4C4004J MT4C40040 T4C400 mt4c4004jdj

    T4C4001JDJ-6

    Abstract: mt4c4001
    Text: T4C4001 J S 1 MEG X 4 DRAM [M IC R O N DRAM 1 MEG X 4 DRAM FEATURES • 1,024-cycle refresh distributed across 16ms (T4C4001J) or 128ms (M T4C4001J S) • Industry-standard pinout, timing, functions and packages • High-perform ance CM O S silicon-gate process


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    PDF MT4C4001 024-cycle MT4C4001J) 128ms T4C4001J MT4C4001J 225mW 20/26-Pin 20-Pin T4C4001JDJ-6

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M IC R O N M T4C40004/5 4 MEG x 4 DRAM FAST PAGE MODE: T4C40004 STATIC COLUMN: T4C40005 FEATURES • Industry standard x4 pinout, timing, functions and packages • High performance, CMOS silicon gate process • Single power supply : +5V±10% or +3.3V±10%


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    PDF T4C40004/5 250mW 2048-cycle 4096-cycle 475mil) 400mil) MT4C40004/5

    Untitled

    Abstract: No abstract text available
    Text: M T 4 C 4 0 0 1 J S 1 MEG x 4 DRAM |U|(=RON DRAM 1 MEG x 4 DRAM 5V, STANDARD OR SELF REFRESH FEATURES • 1,024-cycle refresh distributed across 16ms (M T4C4001J) or 128ms (M T4C4001J S) • Industry-standard pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process


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    PDF 024-cycle T4C4001J) 128ms T4C4001J MT4C4001J 20/26-Pin MT4C4001

    intel 29F

    Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
    Text: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256


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    PDF 628127H T7164 712S6 DT71Q08 1S61C64AH LS61C2S6AH IS61LV3216 S61C512 IS61C64 S61LV256 intel 29F T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568

    Untitled

    Abstract: No abstract text available
    Text: 1, 2 MEG X 32 DRAM SIMMs MICRON • ItCHtfULOGYIMC D R A M L ^ r iA A lV I MT8D132 X MT16D232(X) MODULE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin, single in-line m emory module (SIMM) • 4M B (1 M eg x 32) and 8MB (2 M eg x 32)


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    PDF MT8D132 MT16D232 72-pin, 024-cycle

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY .ü ïïi04,0^ !? -j, MEG x 4 DRAM « ch«oL„ „ « DRAM 1 MEG x 4 DRAM FEATURES * * » * «• Single +5V ±10% power supply JEDEC-standard pinout and packages High-perform ance CMOS silicon-gate process All inputs, outputs and clocks are TTL-com patible


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    PDF 024-cycle 128ms 25-35ns 128ms MT4C4007J 001E024

    T4C4001JDJ-6

    Abstract: T4C4001
    Text: DRAM 1 MEG X 4 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry standard x4 pinout, tim ing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply • All inputs, outputs and clocks are fully TTL compatible


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    PDF T4C4001J 024-cycle 128ms 225mW 20-Pin MT4C4001JL T4C4001JDJ-6 T4C4001

    MT4C4001

    Abstract: No abstract text available
    Text: MT20D240 2 MEG X 40 DRAM M ODULE p iC R O fS J 2 MEG X 40 DRAM DRAM MODULE NEW I FAST PAGE MODE MT20D240 LOW POWER, EXTENDED REFRESH (MT20D240 L) FEATURES • • • • PIN ASSIGNMENT (Top View) 72-pin single-in-line package High-performance CM OS silicon-gate process.


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    PDF MT20D240 72-pin 024-cycle 128ms MT20D240) MT4C4001

    MT4C4007JDJ

    Abstract: ST bsx 26
    Text: MTHat3Z XI(SFr MTt6D222(XJ (S | t M B G *ZM EE jc3ZDRÄIW1 M O D ULE DRAM 1 MEG, 2 MEG x 32 M UW D U L tr - 4, 8 MEGABYTE, 5V, OPTIONAL SELF REFRESH, FAST PAGE OR EDO PAGE MOPE FEATURES • JE D E C - a n d i n d u s tr y - s ta n d a r d pinout in a 72-pin,


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    PDF MTt6D222 72-pin, 23ZIX MT4C4007JDJ ST bsx 26

    W9C 08

    Abstract: marking W9C MT4C400
    Text: SSE D MICRON TECHNOLOGY INC blllSMT □ 0 G S 7 M C1 3T7 M N R N T4C4001J 883C 1 MEG X 4 DRAM IC Z R O N MILITARY DRAM 1 MEG X 4 DRAM FAST PAGE MODE PIN ASSIGNMENT Top View • SMD 5962-90847, Class M • JAN 5962-90847, Class B • MIL-STD-883, Class B


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    PDF MT4C4001J MIL-STD-883, 20-Pin 450mW 024-cycle MIL-STO-883 W9C 08 marking W9C MT4C400

    Untitled

    Abstract: No abstract text available
    Text: MICR ON S E M I C O N D U C T O R INC b3E D • b l l l S M T D D D V bb ? 51b ■ MRN T4C4004J 1 MEG x 4 DRAM I^HCRON DRAM 1 MEG x 4 DRAM QUAD CAS PARITY, FAST-PAGE-MODE FEATURES _ PIN ASSIGNMENT Top View • Four independent CAS controls, allowing individual


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    PDF MT4C4004J 36bit 275mW A1993, T4C4001JDJ T4C4004JDJ

    Untitled

    Abstract: No abstract text available
    Text: T4C4001 J S 1 MEG X 4 DRAM (MICRON DRAM 1 MEG x 4 DRAM 5V, STANDARD OR SELF REFRESH • 1,024-cycle refresh distributed across 16ms (T4C4001J) or 128ms (T4C4001J S) • Industry-standard pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process


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    PDF MT4C4001 024-cycle MT4C4001J) 128ms MT4C4001J 20/26-Pin 001217T

    Untitled

    Abstract: No abstract text available
    Text: M IC R O N I T4C4003J 1 MEG X 4 DRAM 1 MEG X 4 DRAM DRAM STATIC COLUMN FEATURES PIN ASSIGNMENT Top View • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 225m W active, typical


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    PDF MT4C4003J 024-cycle 20/26-Pin T4C4003JDJ-7

    pin diagram for IC 7476

    Abstract: INTERNAL DIAGRAM OF IC 7476
    Text: ADVANCE |U|ICRON 1 MEG 1 MEG DRAM MODULE MT16D T 164 64 DRAM MODULE 64 DRAM FAST PAGE MODE (MT16D(T)164) LOW POWER, EXTENDED REFRESH (MT16D(T)164 L) FEATURES PIN A SSIG N M E N T (Top View) • Industry-standard pinout in a 168-pin, dual read-out, single in-line package


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    PDF MT16D 168-pin, 600mW 024-cycle 128ms 168-Pi pin diagram for IC 7476 INTERNAL DIAGRAM OF IC 7476

    marking wml

    Abstract: j-l003 marking WMM C1994 MT4C4001 MT4C4001J MT4C4001JDJ-6
    Text: M ir n O M I .“ hT M T 4C 4001J S 1 M EG X 4 D R A M 1 MEG DRAM X 4 DRAM STANDARD OR SELF REFRESH a J3 > FEATURES • 1,024-cycle refresh distributed across 16ms (T4C4001J) or 128ms (T4C4001J S) • Industry-standard pinout, timing, functions and packages


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    PDF MT4C4001 024-cycle MT4C4001J) 128ms MT4C4001J 225mW CI994. marking wml j-l003 marking WMM C1994 MT4C4001JDJ-6

    LIS-1024

    Abstract: No abstract text available
    Text: OBSOLETE M I C R O N 1 ^cnllvZ DRAM E G x 4 T4C4007J FEATURES PIN ASSIGNMENT Top View • • • • • Single +5V +10% pow er supply JED EC-standard pinout and packages H igh-perform ance CM OS silicon-gate process All inputs, outputs and clocks are TTL-com patible


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    PDF 024-cycle 128ms MT4C4007J 20/26-Pin 128ms LIS-1024

    Untitled

    Abstract: No abstract text available
    Text: [m i c r o T4C4003J 1 MEG X 4 DRAM n DRAM 1 MEG X 4 DRAM STATIC COLUMN FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, C M O S silicon-gate process • Single +5V ±10% p ow er supply • L o w power, 3 m W standby; 225mW active, typical


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    PDF MT4C4003J 225mW 024-cycle 20-Pin 70nsde

    T4C4004JDJ

    Abstract: marking W7F
    Text: T4C4004J 1 MEG X 4 DRAM I^ IIC R O N DRAM 1 MEG x 4 DRAM FEATURES _ PIN ASSIGNMENT Top View • Four independent CAS controls, allowing individual manipulation to each of the four data inpu t/output ports (DQ1 through DQ4). • Offers a single chip solution to byte level parity for 36bit words when using 1 M eg x 4 DRAMs for memory


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    PDF MT4C4004J 36bit 275mW 024-cycle 24-Pin MT4C4001JDJ MT4C4004JDJ T4C4004JDJ marking W7F

    T4C4007JDJ-7

    Abstract: No abstract text available
    Text: PRELIMINARY T4C4007J S 1 MEG X 4 DRAM M IC R O N 1 MEG x 4 DRAM DRAM 5V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) • • • • • Single +5V ±10% power supply JEDEC-standard pinout and packages High-perform ance CM OS silicon-gate process


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    PDF MT4C4007J 024-cycle 128ms 25-35ns 20/26-Pin T4C4007JDJ-7

    U15-U10

    Abstract: MT18D236
    Text: MT9D136, MT18D236 1 MEG. 2 MEG x 36 DRAM MODULE |V /|ICZRO N DRAM MODULE 1 MEG, 2 MEG x 36 FEATURES PIN ASSIGNMENT Front View • C o m m o n R A S co n tro l p er sid e p in o u t in a 72-p in , sin g le-in -lin e m em o ry m o d u le (SIM M ) • H ig h -p e rfo rm a n ce C M O S silico n -g a te p ro cess.


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    PDF MT9D136, MT18D236 72-Pin MT1BD236 U15-U10

    T4C4007J

    Abstract: No abstract text available
    Text: OBSOLETE 1, 2 MEG X 32 DRAM SIMMs MICRON I TECHNOLOGY, INC. MT8D132 X MT16D232(X) DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) • JED EC - and industry-standard pinout in a 72-pin, single in-line m em ory m odule (SIMM) • 4M B (1 M eg x 32) and 8MB (2 M eg x 32)


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    PDF MT8D132 MT16D232 72-pin, 024-cycle 72-Pin T4C4007J