E3P102
Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001 SCILLC, 2001 Previous Edition 1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.
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Original
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DL135/D
Apr-2001
r14525
DLD601
E3P102
T2-955V
e6n02
t9n10e
DL135
1086v
l1n06c
24 v DC relay 34.51.7
d3n03
20n06hl
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PDF
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T50N06
Abstract: AN569 MTB50N06VL MTB50N06VLT4 sot-223 body marking D K Q F T50N06VL
Text: MTB50N06VL Preferred Device Power MOSFET 42 Amps, 60 Volts, Logic Level N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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Original
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MTB50N06VL
r14525
MTB50N06VL/D
T50N06
AN569
MTB50N06VL
MTB50N06VLT4
sot-223 body marking D K Q F
T50N06VL
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PDF
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Untitled
Abstract: No abstract text available
Text: MTB50N06VL Preferred Device Power MOSFET 42 Amps, 60 Volts, Logic Level N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power
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Original
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MTB50N06VL
MTB50N06VL/D
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PDF
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