BUZ73A equivalent
Abstract: buz73a BUZ73 ta4600 BUZ76A TB334
Text: BUZ73A Semiconductor Data Sheet 5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET October 1998 File Number 2263.1 Features • 5.8A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.600Ω (BUZ73 field effect transistor designed for applications such as
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BUZ73A
BUZ73
TA4600.
BUZ73A equivalent
buz73a
ta4600
BUZ76A
TB334
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Untitled
Abstract: No abstract text available
Text: BUZ73A Semiconductor Data Sheet October 1998 5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET T his is an N -C hannel e n h a n ce m e n t m ode silicon gate pow er field e ffect tra n sisto r d e sig n e d for ap plicatio ns such as File Number 2263.1 Features
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BUZ73A
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