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    rfl2n06

    Abstract: AN7254 AN7260 RFL2N06L
    Text: RFL2N06L Data Sheet October 1999 2A, 60V, 0.950 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 2A, 50V and 60V The RFL2N06L N-channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers,


    Original     		RFL2N06L RFL2N06L TA952ingements rfl2n06 AN7254 AN7260 PDF

    TA9520

    Abstract: No abstract text available
    Text: RFL2N05L, RFL2N06L HARRIS S E M I C O N D U C T O R 2A, 50V and 60V, 0.95 Ohm, Logic Level, N-Channel Power MOSFETs July 1998 Description Features 2A, 50V and 60V Com patible with Autom otive Drive Requirements The RFL2N05L and RFL2N06L are N-channel enhancement


    OCR Scan     		RFL2N05L, RFL2N06L RFL2N05L RFL2N06L TA9520. 0-95i2 AN7254 AN7260. TA9520 PDF

    RFL2N05L

    Abstract: RFL2N06L RFP4N05L RFP4N06L TA9520
    Text: Logic-Level Power MOSFETs RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L File N u m be r 1560 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINALDIAGRAM 2 and 4 A, 50 V — 60 V rDs(on): 0.6 0 and 0.750 Features: • ■


    OCR Scan     		RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L RFL2N05L RFL2N06L RFP4N05L RFP4N06L* RFP4N06L TA9520 PDF