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Kyocera AVX Components TAJE226M035RNJ CAP TANT 22UF 20% 35V 2917
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DigiKey	TAJE226M035RNJ	Digi-Reel	3,552		1	1 $3.09 10 $2.024 100 $1.4592 1000 $1.4592 10000 $1.4592	Buy Now
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Avnet Americas	TAJE226M035RNJ	Reel		12 Weeks	400	1 - 10 - 100 - 1000 $0.994 10000 $0.92383	Buy Now
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Newark	TAJE226M035RNJ	Cut Tape			400	1 - 10 - 100 - 1000 $1.55 10000 $1.55	Buy Now
	TAJE226M035RNJ	Reel			400	1 - 10 - 100 - 1000 $0.97 10000 $0.97	Buy Now
RS	TAJE226M035RNJ	Bulk		21 Weeks	400	1 - 10 - 100 - 1000 $2.2 10000 $2.09	Get Quote

Bristol Electronics	TAJE226M035RNJ		659			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	TAJE226M035RNJ		292			1 $2.5052 10 $2.5052 100 $2.5052 1000 $1.1587 10000 $1.1587	Buy Now
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TTI	TAJE226M035RNJ	Reel	52,800		400	1 - 10 - 100 - 1000 $0.98 10000 $0.91	Buy Now
TME	TAJE226M035RNJ				400	1 - 10 - 100 - 1000 $0.65 10000 $0.65	Get Quote
ComSIT USA	TAJE226M035RNJ		320			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Abacus	TAJE226M035RNJ	Reel		14 Weeks	400	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Kyocera AVX Components TAJE226M035HNJ CAP TANT
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DigiKey	TAJE226M035HNJ	Reel			4,400	1 - 10 - 100 - 1000 - 10000 $1.43725	Buy Now
Avnet Americas	TAJE226M035HNJ	Reel		20 Weeks	4,400	1 - 10 - 100 - 1000 - 10000 $1.36702	Buy Now
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Newark	TAJE226M035HNJ	Reel			4,400	1 - 10 - 100 - 1000 - 10000 $1.5	Buy Now
RS	TAJE226M035HNJ	Bulk		21 Weeks	400	1 - 10 - 100 - 1000 $1.94 10000 $1.84	Get Quote
Kyocera AVX Components TAJE226M035SNJ CAP TANT
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DigiKey	TAJE226M035SNJ	Reel			1,500	1 - 10 - 100 - 1000 - 10000 $1.05997	Buy Now
Avnet Americas	TAJE226M035SNJ	Reel		12 Weeks	1,500	1 - 10 - 100 - 1000 - 10000 $1.25339	Buy Now
Mouser Electronics	TAJE226M035SNJ					1 - 10 - 100 - 1000 - 10000 $1.24	Get Quote
Newark	TAJE226M035SNJ	Reel			1,500	1 $1.71 10 $1.71 100 $1.71 1000 $1.71 10000 $1.41	Buy Now
	TAJE226M035SNJ	Cut Tape			1,500	1 $1.83 10 $1.83 100 $1.83 1000 $1.83 10000 $1.83	Buy Now
RS	TAJE226M035SNJ	Bulk		21 Weeks	1,500	1 - 10 - 100 - 1000 - 10000 $2.06	Get Quote

Bristol Electronics	TAJE226M035SNJ		1,200			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	TAJE226M035SNJ	Reel			1,500	1 - 10 - 100 - 1000 - 10000 $0.749	Buy Now
TME	TAJE226M035SNJ				1,500	1 - 10 - 100 - 1000 - 10000 $0.65	Get Quote
Avnet Abacus	TAJE226M035SNJ	Reel		14 Weeks	1,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Kyocera AVX Components TAJE226M035HNJV Cap Tant Solid 22uF 35V E CASE 20% SMD 2917 125?C T/R - Tape and Reel (Alt: TAJE226M035HNJV)
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Avnet Americas	TAJE226M035HNJV	Reel		20 Weeks	4,400	1 - 10 - 100 - 1000 - 10000 $1.3466	Buy Now
Mouser Electronics	TAJE226M035HNJV					1 - 10 - 100 - 1000 - 10000 -	Get Quote
RS	TAJE226M035HNJV	Bulk		21 Weeks	400	1 - 10 - 100 - 1000 $2.16 10000 $2.06	Get Quote
KYOCERA AVX Components TAJE226M035RNJ Cap Tant Solid 22uF 35V E CASE 20%( 7.3 X 4.3 X 4.1mm) Inward L SMD 7343-43 0.5 Ohm 125°C T/R
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Verical	TAJE226M035RNJ		8,400		800	1 - 10 - 100 - 1000 $0.758 10000 $0.758	Buy Now

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TAJE226M035 Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
TAJE226M035A	AVX	Standard Tantalum Capacitor	Original	PDF
TAJE226M035B	AVX	Standard Tantalum Capacitor	Original	PDF
TAJE226M035H	AVX	Tantalum Capacitors, Capacitors, CAP TANT 22UF 35V 20% 2917	Original	PDF
TAJE226M035P	AVX	Standard Tantalum Capacitor	Original	PDF
TAJE226M035R	AVX	Standard Tantalum Capacitor	Original	PDF
TAJE226M035R	AVX	CAP 22UF 35V 20% TANT SMD-7343-43 TR-7	Original	PDF
TAJE226M035RNJ	AVX	CAP 22UF 35V 20% TANT SMD-7343-43 TR-7	Original	PDF
TAJE226M035S	AVX	Standard Tantalum Capacitor	Original	PDF
TAJE226M035Y	AVX	Standard Tantalum Capacitor	Original	PDF

TAJE226M035 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: MW4IC915 Freescale Semiconductor Rev. 6, 5/2006 Replaced by MW4IC915NBR1 GNBR1 . There are no form, fit or function changes with this part Technical Data replacement. N suffix added to part number to indicate transition to lead - free terminations. ARCHIVE INFORMATION	Original	PDF	MW4IC915 MW4IC915NBR1 MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1
Untitled Abstract: No abstract text available Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA MRF5S21150R3 and MRF5S21150SR3 replaced by MRF5S21150HR3 and MRF5S21150HSR3. H suffix indicates lower thermal resistance package. MRF5S21150R3 RF Power Field Effect Transistors MRF5S21150SR3	Original	PDF	MRF5S21150/D MRF5S21150R3 MRF5S21150SR3 MRF5S21150HR3 MRF5S21150HSR3. MRF5S21150R3 MRF5S21150SR3
100B0R5BW Abstract: MW4IC2020NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW4IC2020 Rev. 7, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020 wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage	Original	PDF	MW4IC2020 MW4IC2020NBR1 MW4IC2020GNBR1 MW4IC2020MBR1 MW4IC2020GMBR1 MW4IC2020 100B0R5BW
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5P20180HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	PDF	MRF5P20180HR6
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA MRF5S21150 RF Power Field Effect Transistors MRF5S21150R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21150S Designed for W–CDMA base station applications with frequencies from 2110	Original	PDF	MRF5S21150/D MRF5S21150 MRF5S21150R3 MRF5S21150S MRF5S21150SR3 MRF5S21150SR3
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage	Original	PDF	MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1
TAJE226M035 Abstract: 200B103MW Text: Freescale Semiconductor Technical Data Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P20180HR6 Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	PDF	MRF5P20180HR6 TAJE226M035 200B103MW
MW4IC2020NBR1 Abstract: Marking Z7 Gate Driver A113 AN1955 AN1977 AN1987 MW4IC2020 MW4IC2020GMBR1 MW4IC2020MBR1 MW4IC2020MBR Text: Document Number: MW4IC2020 Freescale Semiconductor Rev. 8, 5/2006 Replaced by MW4IC2020NBR1 GNBR1 . There are no form, fit or function changes with this Technical Data part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MW4IC2020 MW4IC2020NBR1 MW4IC2020 MW4IC2020MBR1 MW4IC2020GMBR1 Marking Z7 Gate Driver A113 AN1955 AN1977 AN1987 MW4IC2020GMBR1 MW4IC2020MBR
A113 Abstract: AN1987 MW4IC2020GMBR1 MW4IC2020MBR1 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC2020/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station	Original	PDF	MW4IC2020/D MW4IC2020M MW4IC2020MBR1 MW4IC2020GMBR1 A113 AN1987 MW4IC2020GMBR1
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	PDF	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MW4IC915N Rev. 8, 3/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi-stage	Original	PDF	MW4IC915N MW4IC915NB/GNB MW4IC915NBR1 MW4IC915GNBR1
J1103 Abstract: J294 MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 TAJE226M035R 465B AN1955 J966 Text: Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 MRF5S21150HR3 J1103 J294 MRF5S21150H MRF5S21150HSR3 TAJE226M035R 465B AN1955 J966
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF5P20180HR6 Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P20180HR6 Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	PDF	MRF5P20180HR6 MRF5P20180HR6
465B Abstract: AN1955 MRF5S21150 MRF5S21150R3 MRF5S21150SR3 TAJE226M035R vishay mosfet MTBF Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. RF Power Field Effect Transistors MRF5S21150R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150SR3	Original	PDF	MRF5S21150/D MRF5S21150R3 MRF5S21150SR3 MRF5S21150R3 465B AN1955 MRF5S21150 MRF5S21150SR3 TAJE226M035R vishay mosfet MTBF

MW4IC2020NBR1 Abstract: A113 AN1955 AN1977 AN1987 MW4IC2020GNBR1 Text: Freescale Semiconductor Technical Data Document Number: MW4IC2020N Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020N wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage	Original	PDF	MW4IC2020N MW4IC2020N MW4IC2020NBR1 MW4IC2020GNBR1 A113 AN1955 AN1977 AN1987 MW4IC2020GNBR1
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF5S21150HR3 MRF5S21150HSR3
vishay mosfet MTBF Abstract: J29-4 465B AN1955 MRF5S21150 MRF5S21150HR3 MRF5S21150HSR3 MRF5S21150R3 MRF5S21150SR3 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA MRF5S21150R3 and MRF5S21150SR3 replaced by MRF5S21150HR3 and MRF5S21150HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21150R3 RF Power Field Effect Transistors MRF5S21150SR3	Original	PDF	MRF5S21150/D MRF5S21150R3 MRF5S21150SR3 MRF5S21150HR3 MRF5S21150HSR3. MRF5S21150R3 MRF5S21150SR3 vishay mosfet MTBF J29-4 465B AN1955 MRF5S21150 MRF5S21150HSR3
200B Abstract: AN1955 MRF5P20180HR6 Text: Freescale Semiconductor Technical Data MRF5P20180HR6 Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P20180HR6 Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	PDF	MRF5P20180HR6 200B AN1955 MRF5P20180HR6
1206 cms diode Abstract: 020C AN1955 AN1987 MW4IC915 MW4IC915GMBR1 MW4IC915MBR1 Text: Freescale Semiconductor Technical Data MW4IC915 Rev. 3, 12/2004 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage	Original	PDF	MW4IC915 MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1 1206 cms diode 020C AN1955 AN1987 MW4IC915 MW4IC915GMBR1
Motorola 506 Abstract: No abstract text available Text: MOTOROLA Order this document by MW4IC2020/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC	Original	PDF	MW4IC2020/D MW4IC2020M MW4IC2020MBR1 MW4IC2020GMBR1 Motorola 506
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF5S21150H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 MRF5S21150HR3
Untitled Abstract: No abstract text available Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P20180/D SEMICONDUCTOR TECHNICAL DATA Replaced by MRF5P20180HR6. H suffix indicates lower thermal resistance package. The RF MOSFET Line MRF5P20180R6 RF Power Field Effect Transistor 1990 MHz, 38 W AVG.,	Original	PDF	MRF5P20180/D MRF5P20180HR6. MRF5P20180R6 Channel2003
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF5S21150H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3

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Kyocera AVX Components TAJE226M035RNJ

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TAJE226M035 Datasheets (9)

TAJE226M035 Datasheets Context Search

Untitled

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100B0R5BW

Untitled

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TAJE226M035

MW4IC2020NBR1

A113

schematic diagram atx Power supply 500w

Untitled

J1103

Untitled

465B

MW4IC2020NBR1

Untitled

vishay mosfet MTBF

200B

1206 cms diode

Motorola 506

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