Untitled
Abstract: No abstract text available
Text: SAN SUN G E L E C T R O N I C S INC b7E D 7 Tb4145 KMM532256CV/CVG 0 0 1 S034 TSQ • SMGK DRAM MODULES 256Kx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM532256CV is a 256K b itsx3 2 Dynamic RAM high density memory module. The Samsung
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Tb4145
KMM532256CV/CVG
256Kx32
KMM532256CV
20-pin
72-pin
22/iF
KMM532256CV-6
110ns
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BC307
Abstract: No abstract text available
Text: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 • LOW NOISE: BC309 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Emitter Voltage :BC307 :BC308/309 Collector-Emitter Voltage :BC307 B C 3 0 8 /3 0 9
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BC307/308/309
BC309
BC307
BC308/309
BC307
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2943666671
Abstract: fr014 l289 FR2 material data sheet BEAD, WOUND FERRITE, 2943666671 FRQ24 FRQ05 fr024 Video cvbs 656 act ddr2 he ntc
Text: ADVANCE INFORMA TION KS0123 Data Sheet MULTIMEDIA VIDEO DIGITAL VIDEO ENCODER The KS0123 multi-standard video encoder converts CCIR 656 8-bit multiplexed digital component video into analog baseband signals. It outputs composite video CVBS and S-Video simultaneously at three analog output pins.
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KS0123
2943666671
fr014
l289
FR2 material data sheet
BEAD, WOUND FERRITE, 2943666671
FRQ24
FRQ05
fr024
Video cvbs 656
act ddr2 he ntc
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM332V204AT KMM332V204AT Fast Page Mode 2Mx32 DRAM DIMM Low Power, 4K Refresh, 3.3V GENERAL DESCRIPTION The Sam sung KM M 332V204AT is a 2M bit x 32 FEATURES • Performance Range: tRAC 60ns 70ns 80ns D ynam ic RAM high density m em ory module. The
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KMM332V204AT
KMM332V204AT
2Mx32
332V204AT
x16bit
72-pin
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Untitled
Abstract: No abstract text available
Text: CMOS DIGITAL INTEGRATED CIRCUIT KS0068 DOT MATRIX LCD CONTROLLER & DRIVER The K S0068 is a dot m atrix LCD driver & controller LSI which is 100 QFP fabricated by low power C M O S technology. FUNCTIO N • C haracter type dot m atrix LCD driver & controller
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KS0068
S0068
32kinds
64-QFP-1420D
Q0220b7
0D220bfl
98-STAB-35mm
120-STAB-35mm
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D KM416C1OOOL/LL • 7Tb4].4S GDlb3b5 134 CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1000L/LL is a CMOS high speed 1,048,576 b itx 16 Dynamic Random Access Memory.
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KM416C1OOOL/LL
KM416C1000L/LL
130ns
KM416C10OOLVLL-8
150ns
KM416C1OOOL/LL-10
100ns
180ns
KM416C1000L/LL-7
KM416C1
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KMM59256-12
Abstract: KMM59256 KMM49257-12
Text: S A M S U N G S E M I C O N D U C T O R INC I>Ejj| 7 ^ b 4 1 M 5 OGDSSlfl KMM49256/KMM49257 ’ KMM59256/KMM59257 ^ 1 1 1 ' MEMORY MODULES 2 5 6 K x 9 Bit DRAM Memory Modules SIP/SIMM FEATURES GENERAL DESCRIPTION • 262,144 x 9-blt Organization • Ninth device has separate D,Q and CSS for Parity
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KMM49256/KMM49257
KMM59256/KMM59257
KMM49256,
KMM49257,
KMM59256
KMM59257
256Kx
256Kx9
KM41256/7
18-pin
KMM59256-12
KMM49257-12
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