Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TC55VCM216 Search Results

    SF Impression Pixel

    TC55VCM216 Price and Stock

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics TC55VCM216ASGN-55 2,292
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics TC55VCM216ASGN55 488
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Quest Components TC55VCM216ASGN55 1,833
    • 1 $13.5
    • 10 $13.5
    • 100 $13.5
    • 1000 $9
    • 10000 $9
    Buy Now
    TC55VCM216ASGN55 257
    • 1 $16.9592
    • 10 $16.9592
    • 100 $13.1905
    • 1000 $12.0598
    • 10000 $12.0598
    Buy Now
    TC55VCM216ASGN55 220
    • 1 $12
    • 10 $12
    • 100 $7.2
    • 1000 $6.9
    • 10000 $6.9
    Buy Now
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC55VCM216ASTN55LA 1,293
    • 1 $20.898
    • 10 $20.898
    • 100 $20.898
    • 1000 $15.6735
    • 10000 $15.6735
    Buy Now

    Toshiba America Electronic Components TC55VCM216ASTN55

    IC,SRAM,256KX16,CMOS,TSSOP,48PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC55VCM216ASTN55 191
    • 1 $12
    • 10 $12
    • 100 $7.2
    • 1000 $6.9
    • 10000 $6.9
    Buy Now
    TC55VCM216ASTN55 2
    • 1 $24.63
    • 10 $24.63
    • 100 $24.63
    • 1000 $24.63
    • 10000 $24.63
    Buy Now

    TC55VCM216 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC55VCM216ASGN40 Toshiba 262,144-Word BY 16-BIT FULL CMOS STATIC RAM Original PDF
    TC55VCM216ASTN Toshiba SRAM - Low Power Original PDF
    TC55VCM216ASTN40 Toshiba 262,144 Word By 16 Bit Full CMOS Static RAM Original PDF
    TC55VCM216ASTN40 Toshiba TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Original PDF
    TC55VCM216ASTN55 Toshiba 262,144 Word By 16 Bit Full CMOS Static RAM Original PDF
    TC55VCM216ASTN55 Toshiba TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Original PDF

    TC55VCM216 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TC55VCM216ASTN

    Abstract: TC55VCM216ASTN40
    Text: TC55VCM216ASTN40,55 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM216ASTN is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to


    Original
    TC55VCM216ASTN40 144-WORD 16-BIT TC55VCM216ASTN 304-bit PDF

    TC55VCM216ASGN40

    Abstract: TC55VCM216 TC55VCM216asgn
    Text: TC55VCM216ASGN40,55 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM216ASGN is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to


    Original
    TC55VCM216ASGN40 144-WORD 16-BIT TC55VCM216ASGN 304-bit TC55VCM216 PDF

    TSOP48-P-1214-0

    Abstract: TC55VCM216ASTN TC55VCM216ASTN40
    Text: TC55VCM216ASTN40,55 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM216ASTN is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to


    Original
    TC55VCM216ASTN40 144-WORD 16-BIT TC55VCM216ASTN 304-bit TSOP48-P-1214-0 PDF

    TC55VCM216ASTN

    Abstract: TC55VCM216ASTN40
    Text: TC55VCM216ASTN40,55 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM216ASTN is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to


    Original
    TC55VCM216ASTN40 144-WORD 16-BIT TC55VCM216ASTN 304-bit PDF

    pf3ad

    Abstract: 16-Bit Priority Encoder using two copies of 8 bit pk1n
    Text: Z16F2800100ZCOG ZNEO Series of Microcontrollers Development Kit User Manual UM020203-0606 ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com ZNEO™ Development Kit User Manual


    Original
    Z16F2800100ZCOG UM020203-0606 EG1218 SN74LVC00 Z8F1285 96C0999-001 pf3ad 16-Bit Priority Encoder using two copies of 8 bit pk1n PDF

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original
    BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000 PDF

    pf3ad

    Abstract: Z16F2811AL20SG PG3AD pg6a PG2AD pg7ad TC55VCM216 PG5AD
    Text: Z16F2800100ZCOG ZNEO Z16F Series Development Kit User Manual UM020205-0908 Copyright 2008 by Zilog®, Inc. All rights reserved. www.zilog.com ZNEO® Z16F Series Development Kit User Manual Warning: DO NOT USE IN LIFE SUPPORT LIFE SUPPORT POLICY ZILOG'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN


    Original
    Z16F2800100ZCOG UM020205-0908 reas11 96C0999-001 pf3ad Z16F2811AL20SG PG3AD pg6a PG2AD pg7ad TC55VCM216 PG5AD PDF

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original
    BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN PDF

    tsop-56 samsung

    Abstract: TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga
    Text: TOSHIBA FLASH Network FCRAM NOR Flash SRAM Memory Selection Guide PSRAM NAND Flash Multi-Chip Packages Memory Cards September 2004 Toshiba America Electronic Components TOSHIBA Toshiba offers one of the widest varieties of memory products of any semiconductor manufacturer. Based on the three core memory technologies:


    Original
    576Mb 256Mb tsop-56 samsung TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga PDF

    th50vpf

    Abstract: TH50VPF5783 TC55VEM208ASTN55 th58nvg TC554161AFT-70L TC554161AFT-70 TC55V8512JI-12 TC55VD1636FFI-150 tc58128aft TC58NVG0S3AFT00
    Text: MOS Memories Dynamic RAMs Static RAMs NOR Flash Memories NAND E2PROM Media Card MCPs multi-chip packages z 2 z 3 z 10 z 11 z 12 z 13 1 Dynamic RAMs Fast Cycle RAM (FCRAMTM ) (DDR) Capacity 256 Mbits 288 Mbits Product No. — TC59LM806CFT-50 — TC59LM806CFT-55


    Original
    TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60 TC59LM814CFT-50 TC59LM814CFT-55 TC59LM814CFT-60 TC59LM818DMB-30 TC59LM818DMB-33 TC59LM818DMB-40 64M/32M th50vpf TH50VPF5783 TC55VEM208ASTN55 th58nvg TC554161AFT-70L TC554161AFT-70 TC55V8512JI-12 TC55VD1636FFI-150 tc58128aft TC58NVG0S3AFT00 PDF

    zilog Smart usb cable schematic

    Abstract: pf3ad UM0171 pg4ad led project with name plate TC55VCM216 CS1 cable PG2AD
    Text: ZNEO Series of Microcontrollers Development Kit Quick Start Guide QS005703-0908 Introduction This Quick Start Guide describes how to set up Zilog’s ZNEO® Series Development Kit and start using it to build designs and applications. Kit Contents For a complete list of material shipped with the ZNEO Series Development Kit, refer to


    Original
    QS005703-0908 PAK0010) 98SE/ Win2000 III/500 SN74LVC04 EG1218 SN74LVC00 zilog Smart usb cable schematic pf3ad UM0171 pg4ad led project with name plate TC55VCM216 CS1 cable PG2AD PDF

    TH58NVG2S3

    Abstract: TC554161AFT-70L 69-206 TC55VCM316BSGN55 TSOP 48 Package nand memory toshiba toshiba sram 2 mbits AFT 181 TC58FVM6T2AFT65 TC58*VG*02 AFT-70L
    Text: 2004-2 PRODUCT GUIDE MOS Memory semiconductor 2004 http://www.semicon.toshiba.co.jp/eng 1. Selection Guide DRAM Dynamic RAMs Network FCRAMTM (DDR FCRAM) 200 MHz (400 Mbps) 182 MHz (364 Mbps) 167 MHz (334 Mbps) 32M x 8 TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60


    Original
    TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60 TC59LM814CFT-50 TC59LM814CFT-55 TC59LM814CFT-60 TC59LM818DMB-30 TC59LM818DMB-33 TC59LM818DMB-40 TC59LM836DMB-30 TH58NVG2S3 TC554161AFT-70L 69-206 TC55VCM316BSGN55 TSOP 48 Package nand memory toshiba toshiba sram 2 mbits AFT 181 TC58FVM6T2AFT65 TC58*VG*02 AFT-70L PDF