GT20D101
Abstract: GT20D201 pc180
Text: 45E D • TCH7250 0017ÔS1 TOSM T ■ TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR - GT20D201 SILICON P CHANNEL TYPE TOSHIBA D IS C R E T E / O P T O HIGH POWER AMPLIFIER APPLICATION Unit in mm V c ES=-250V (MIN.) . High Forward Transfer Admittance I Yfe I =10S (TYP.)
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TDT72S0
0017AS1
GT20D101
-250V
GT20D201
T-39-31
GT20D101
GT20D201
pc180
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2sc2704
Abstract: 2SA1144 AC46C Toshiba 2sC2704
Text: TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA Sb <DI S C R E T E / O P T O 5bC 07586 J J — 0~J 2SC2704 SILICON NPN EPITA X IA L TYPE PCT PROCESS) AUDIO FREQUENCY A M P L I F I E R DE I TCH7250 DQD7Sflti 0 f Unit in mm APPLICATIONS. 7 .9 M A X .
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TCH72S0
2SC2704
2SA1144.
200MHz
TCH725D
2sc2704
2SA1144
AC46C
Toshiba 2sC2704
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Toshiba gt20d101
Abstract: No abstract text available
Text: 45E D • TCH7250 0017ÔS1 T ■ TOSHIBA IN S U LA T ED G ATE B IP O LA R T R A N S IS TO R TOS M - SILICO N P C H A N N E L T Y P E TOSHIBA GT20D201 DISCRETE/OPTO HIGH POWER AMPLIFIER APPLICATION Unit in mm V c ES=-250V (MIN.) . High Forward Transfer Admittance
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GT20D101
-250V
GT20D201
T-39-31
Toshiba gt20d101
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T0T7250
Abstract: FS1N
Text: TCD6162AU GEN ERAL The TC6162AU is a C M O S LSI chip for generating NTSC television synchronization signals and operating a 400,000- pixel FITCCD area image sensor. This chip covers the electronic shutter m ode of 1 /60 to 1 / 2000 seconds. It has a vertical reset pin that enables
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TCD6162AU
TC6162AU
TCH72S0
Q051S44
QFP44-P-1010A
T0T7250
FS1N
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P-|dB = 36 dBm at 5.9 GHz to 6.4 GHz
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TIM5964-4L
MW50710196
TIM5964-4L
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S3006D
Abstract: S3060S k39c DIODE 39c
Text: DE I TQT7BSQ 0000532 ñ — 9097250 TOSHIBA DI S C R E T E / O P T O = ^ t> - y - r 7 r - K 39C 0 0 5 3 2 0 7~-/> o -7 4 ;/ P Í t f ; o M icrowave + + / 1 & ffl Mi x e r / D e t e c t o r • i& m g - c - i - * i fé • Low No i se N F „ = 6.0 d B
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S3060E
S3060D
S3060S
H725D
D0DDS37
S3006D
S3060S
k39c
DIODE 39c
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SJ238 Field Effect Transistor U n i t in m m Silicon P Channel MOSType L2-t>MOS IV 4.6MAX. High Speed, High Current DC-DC Converter, 1,6 MAX. 0.4 ± 0 .0 5 1.7 MAX. J3a= Relay Drive and Motor Drive Applications “ 3 n F e a tu re s
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2SJ238
00E15b?
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, Single Carrier Level • High power - P1dB = 39.5 dBm at 7.7 GHz to 8.5 GHz
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TIM7785-8SL
TCH7250
TIM7785-8SL
MW51090196
TGT725D
DG227D4
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Untitled
Abstract: No abstract text available
Text: TIM6472-30L FEATURES • LOW INTERMODULATION DISTORTION IM 3 = - 4 3 dBc at Po = 34.5 dBm, Single Carrier Level - HIGH POWER PldB = 4 4 .5 dBm at 6.4 GHz to 7.2 GHz • HIGH GAIN G IdB = 7-° dB at 6 4 GHz t0 7 2 GHz - BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE
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TIM6472-30L
2608C.
D0E300H
TIM6472-30L-----------------
------------------------------TIM6472-30L
00E3004
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P ld B = 36 dBm at 6.4 GHz to 7.2 GHz
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TIM6472-4L
MW50850196
CH72SD
0Q22547
TIM5964-4L
TCH7250
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2SC2115
Abstract: DDD374 S21E
Text: 3T TOSHIBA {DISCRETE/OPTO} 9097250 TOSHI BA DISCRETE/OPTO 39C 00370 o u H F -c o i i s '<-s vi& m & M m m a* O U H F —C O High Band Speed T^3/-/S . Low No ¡ s e Ampi i f i e r App 1 i c a I i o n s Swi t c h i n g A p p 1 i c a t i o n s • f t = 6.5GHz
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00D0370
IS21EI2-
DDD374
2SC2115
2SC2115
S21E
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TPM1919-40 TECHNICAL DATA FEATURES : • HIGH POWER ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE PidB = 46.0 dBm at 1.9 GHz ■ HIGH GAIN GidB = 13 dB at 1.9 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C
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TPM1919-40
0010406F
175SD
TPM1919-40Ã
TCH7250
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-30L Low Distortion internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - PldB = 45 dBm at 5.3 GHz to 5.9 GHz
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TIM5359-30L
TIM5359-30L
MW50680196
TCH7250
0Q22432
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TIM5359-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P-idB = 39 dBm at 5.3 GHz to 5.9 GHz • High gain - G idB = 8.5 dB at 5.3 GHz to 5.9 GHz • Broad band internally matched • Hermetically sealed package
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TIM5359-8
TIM5359-8
MW50660196
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n25d
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-14L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM 3 = -42 dBc at Po = 3 1 .5 dBm, - Single carrier level • High power - P1dB = 42.0 dBm at 6.4 GHz to 7.2 GHz
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TIM6472-14L
0D2252D
n25d
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Untitled
Abstract: No abstract text available
Text: TOSHIBA S4D88N S4D88N,S4D88X LED SMD Lamp Outline drawing SURFACE MOUNT DEVICE as ni Y FEATURES • • • • • 2.0 L X 1,25(W) X 1,1(H)mm SIZE SMALL PACKAGE - HIGH DENSITY MOUNTING IS AVALIABLE AVAILABLE OF AUTOMOUNTING MACHINE USE DIP AND REFLOW SOLDERING ARE APPLICABLE
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S4D88N
S4D88X
S4D88D
660nm
620nm
S4D88X
590nm
TCH7250
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-10LA Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz
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TIM1414-10LA
Inte80
MW50350196
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Untitled
Abstract: No abstract text available
Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG8J6ES1 High Power Switching Applications Motor Control Applications • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage : VCE sat = 4.0V (Max.)
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PW03260796
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, Single Carrier Level • High power - P-idB = 39-5 dBm at 5.9 GHz to 6.4 GHz
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TIM5964-8SL
MW50750196
G02251S
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM0910-15 Features • High power - p 1dB = 42.0 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 7.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package RF Performance Specifications Q¡ = 25°C
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TIM0910-15
2-11C1B)
MW50060196
TCH7250
002E2L
TIM0910-1
TCH72S0
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SK1719 Field Effect Transistor Silicon N Channel MOS Type l?-rc-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance ‘ ^D S (O N ) = 0 -0 8 Q (T y p .)
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2SK1719
10OpA
TCH7250
0D21b45
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SK1113 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType L2-rt-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance
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2SK1113
10OpA
TCH72S0
DE15C
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLG1005, TLGD1005, TLPG1005, TLOE1005, TLYE1005, TLS1005, TLRA1005 LED Surface Mount Device Unit in mm Features • 2 mm Thrust Out Domed Lens • 3.2 L x 2.4(W) x 2.5(H) mm Size - High Efficiency SMD Lamps - Realizing over 5 times Luminous than TL*1002 Series
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TLG1005,
TLGD1005,
TLPG1005,
TLOE1005,
TLYE1005,
TLS1005,
TLRA1005
AK225
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Untitled
Abstract: No abstract text available
Text: G a As INFRARED EMITTER TLN107A TLN107A INFRARED LED FOR PHOTO INTERRUTER OPTO-ELECTRONIC SWITCH INFRARED RAYS APPLIED EQUIPMENT • • • High radiant intensity Excellent linearity of radiant intensity and modulation by pulse operation and high frequency is possible.
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TLN107A
TLN107A)
TPS607A
TPS608A
TPS608A
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