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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC55V1325FF-8/10/12 PRELIMINARY 32,768 WORD x 32 BIT SYNCHRONOUS PIPELINE BURST SRAM Description The TC55V1325FF is a 1,048,576 bit synchronously pipelined burst SRAM that is organized as 32,768 words by 32 bits and designed for use in a secondary cache to support MPUs which have burst functions.


    OCR Scan     		TC55V1325FF-8/10/12 TC55V1325FF SR01021095 TGT724Ã LQFP100- P-1420) PDF

    Untitled

    Abstract: No abstract text available
    Text: - TC7S04F TC7S04F INVERTER U nit in mm The TC7S04F is a high speed C2MOS INVERTER fabricated with silicon gate C2MOS technology. It achieves high speed operation similar to equivalent LSTTL while m aintaining the C2MOS low power dissipation.


    OCR Scan     		-TC7S04F TC7S04F) TC7S04F TC74HC TGT724fl PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5117440BS J-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5117440BSJ is the new generation dynamic RAM organized 4,194,304 word by 4 bits. TheTC5117440BSJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both


    OCR Scan     		TC5117440BS J-60/70 TC5117440BSJ TheTC5117440BSJ 300mil) DR16090394 TDT7240 TC5117440BSJ-60/70 SOJ28-P-300B) PDF