uPD3599
Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
|
Original
|
X10679EJFV0SG00
uPD3599
transistor nec 2SK2396
MOS FET BUZ 444
MC-7643
nec 3S4M
4305 regulator nec
RD2.4S equivalent
2SC4305 NEC
2sA1441 nec
NPN transistor SST 117
|
PDF
|
lg crt monitor circuit diagram
Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
|
Original
|
X10679EJGV0SG00
lg crt monitor circuit diagram
micro servo 9g
samsung lcd tv power supply diagrams
MP 1008 es
uPa2003
8049 microcontroller APPLICATION
LG lcd tv tuner
pioneer car dvd service manual
lg washing machine circuit diagram
8ch pnp DARLINGTON TRANSISTOR ARRAY
|
PDF
|
free transistor equivalent book 2sc
Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
|
Original
|
X10679EJHV0SG00
free transistor equivalent book 2sc
uPA1556AH
The Japanese Transistor Manual 1981
samsung UHF/VHF TV Tuner
MOSFET cross-reference 2sk
PD431000A-X
upper arm digital sphygmomanometer circuit diagram
PD72001
uPC1237
uPC 2002
|
PDF
|
Untitled
Abstract: No abstract text available
Text: The streak camera is an ultra high-speed detector which captures light emission phenomena occurring in extremely shorttime periods. Streak Tube Preface This booklet has been put together in order to introduce the operating principle of streak cameras, show some examples of how streak cameras are used,
|
Original
|
B1201
SHSS0006E01
APR/2008
|
PDF
|
MIP51
Abstract: MIP806 MIP803 MIP501 MIP704 MIP805 MIP824 MIP825 MIP826 MIP2
Text: New EL Display Driving IPD Series with Built-in Diode MIP824/MIP825/MIP826 Overview Unit : mm This series of IPDs Intelligent Power Devices incorporates a diode which formerly was connected externally. It can drive an EL display with high brightness and low power consumption.
|
Original
|
MIP824/MIP825/MIP826
MIP824
MIP825)
MIP501
MIP511
MIP704
MIP709
MIP805
MIP13*
MIP14*
MIP51
MIP806
MIP803
MIP805
MIP825
MIP826
MIP2
|
PDF
|
IPD Converter
Abstract: MIP806 MIP814 MIP02 foreign exchange companies MIP2 MA2Z001 MIP501 MIP704 MIP805
Text: New L a r g e - s c r e e n E L D r i ve r M I P 8 1 4 • Overview Unit : mm Part A 4.3±0.2 0.25±0.1 10 9 8 7 6 123 4 5 0.5±0.07 12˚ 6.3±0.2 MIP814 is an IPD Intelligent Power Device that can drive large-screen EL display units with low current to deliver exceptionally bright pictures. Its
|
Original
|
MIP814
MIP501
MIP511
MIP704
MIP709
MIP805
MIP13*
MIP14*
MIP15*
MIP16*
IPD Converter
MIP806
MIP02
foreign exchange companies
MIP2
MA2Z001
MIP805
|
PDF
|
HSC277
Abstract: pin diode application
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
REJ27G0028-0100/Rev
HSC277
pin diode application
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky
|
Original
|
2002/95/EC)
MTM86727
MTM86727
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM76720 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview MTM76720 is the composite MOS FET (N-channel MOS FET and schottky
|
Original
|
2002/95/EC)
MTM76720
MTM76720
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky
|
Original
|
2002/95/EC)
MTM86727
MTM86727
|
PDF
|
IC sine wave generator for automotive
Abstract: DB2S311 DMT9FK01
Text: This product complies with the RoHS Directive EU 2002/95/EC . DMT9FK01 Silicon epitaxial planar type (Diode) Silicon PNP epitaxial planar type (Tr) For high speed switching circuits For digital circuits • Features Package Two elements incorporated into one package (SBD + Tr)
|
Original
|
2002/95/EC)
DMT9FK01
DRAQA44E
DB2S311
IC sine wave generator for automotive
DB2S311
DMT9FK01
|
PDF
|
MTM15624
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM15624 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits • Package Overview Code Mini5-G1 Pin Name 1: Cathode 2: Drain
|
Original
|
2002/95/EC)
MTM15624
MTM15624
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DMT9FK01 Silicon epitaxial planar type (Diode) Silicon PNP epitaxial planar type (Tr) For high speed switching circuits For digital circuits • Features Package Two elements incorporated into one package (SBD + Tr)
|
Original
|
2002/95/EC)
DMT9FK01
DRAQA44E
DB2S311
DMT9FK010R
|
PDF
|
MTM76720
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM76720 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits M Di ain sc te on na tin nc ue e/ d • Package
|
Original
|
2002/95/EC)
MTM76720
MTM76720
|
PDF
|
|
MIP2L4MY
Abstract: mosfet MIP2L4MY MIP2L40MY 20/mosfet MIP2L4MY mip0 mip2e mip2L
Text: MIP2L40MY Silicon MOS FET type integrated circuit • Features Package Reducing the average noise Adding a frequency jitter function to MIP2E/3E* series to dramatically reduce the average noise and simplify EMI parts Stabilization of maximum electric power by input correction
|
Original
|
MIP2L40MY
O-220-A2
voltaP01*
MIP00*
MIP55*
MIP816/826
MIP50*
MIP02*
MIP52*
MIP56*
MIP2L4MY
mosfet MIP2L4MY
MIP2L40MY
20/mosfet MIP2L4MY
mip0
mip2e
mip2L
|
PDF
|
mosfet MIP2L4MY
Abstract: MIP2L40MY MIP2L4My MIP2L
Text: MIP2L40MY Silicon MOS FET type integrated circuit • Features Package Reducing the average noise Adding a frequency jitter function to MIP2E/3E* series to dramatically reduce the average noise and simplify EMI parts Stabilization of maximum electric power by input correction
|
Original
|
MIP2L40MY
O-220-A2
MIP803/804
MIP52
MIP816/826
MIP55
MIP50
MIP51
mosfet MIP2L4MY
MIP2L40MY
MIP2L4My
MIP2L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XN09D61 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 1 2 3 (0.95) (0.95) 1.9±0.1
|
Original
|
2002/95/EC)
XN09D61
2SA2046
MA3ZD12
|
PDF
|
MA3ZD12
Abstract: XN09D58
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XN09D58 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 • XN9D57 + MA3ZD12 SBD 2
|
Original
|
2002/95/EC)
XN09D58
XN9D57
MA3ZD12
MA3ZD12
XN09D58
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XN09D57 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 • Basic Part Number • XN9D57 + MA3XD11
|
Original
|
2002/95/EC)
XN09D57
XN9D57
MA3XD11
|
PDF
|
UN234
Abstract: No abstract text available
Text: Small Signal Transistor Arrays UNA0234 Silicon PNP epitaxial planar type 4 elements Silicon NPN epitaxial planar type (4 elements) Unit: mm For motor drives For Small motor drive circuits in general 0.2+0.1 –0.0 12° 0.3±0.1 16 151413121110 9 12 345678
|
Original
|
UNA0234
UN234
|
PDF
|
MTM86627
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter For switching circuits • Package Overview MTM86627 is the composite MOS FET (P-channel MOS FET and Schttoky
|
Original
|
2002/95/EC)
MTM86627
MTM86627
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14847 Revision. 1 Product Standards MOS FET FC6B22220L FC6B22220L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.56 5 4 1 2 3 Features y Low source-source ON resistance:Rss on typ. = 8.2 m Ω(VGS = 4.5 V)
|
Original
|
TT4-EA-14847
FC6B22220L
|
PDF
|
mip2e
Abstract: mip2l3
Text: MIP2L30MS Silicon MOS FET type integrated circuit • Features Package Reducing the average noise Adding a frequency jitter function to MIP2E/3E* series to dramatically reduce the average noise and simplify EMI parts Stabilization of maximum electric power by input correction
|
Original
|
MIP2L30MS
RatP01*
MIP00*
MIP55*
MIP816/826
MIP50*
MIP02*
MIP52*
MIP56*
MIP51*
mip2e
mip2l3
|
PDF
|
mip2l3
Abstract: mip2e 1/mip2l3 MIP2L30MS
Text: MIP2L30MS Silicon MOS FET type integrated circuit • Features Package Reducing the average noise Adding a frequency jitter function to MIP2E/3E* series to dramatically reduce the average noise and simplify EMI parts Stabilization of maximum electric power by input correction
|
Original
|
MIP2L30MS
MIP803/804
MIP52
MIP816/826
MIP55
MIP50
MIP51
mip2l3
mip2e
1/mip2l3
MIP2L30MS
|
PDF
|