Untitled
Abstract: No abstract text available
Text: AU105 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)130 I(C) Max. (A)10 Absolute Max. Power Diss. (W)27 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)500uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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AU105
time900n
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Untitled
Abstract: No abstract text available
Text: MG50D2DM1 Transistors Independent MOSFET Power Module Circuits Per Package2 V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)50 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case I(DSS) Min. (A) I(GSS) Max. (A)150n @V(GS) (V) (Test Condition)20
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MG50D2DM1
time900n
HL080HD5
Code4-310
NumberTR00400310
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Untitled
Abstract: No abstract text available
Text: NTC1868 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400öè V(BR)CBO (V) I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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NTC1868
time900n
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Untitled
Abstract: No abstract text available
Text: GSI550 Transistors N-Channel IGBT with Current Sensing V BR CES (V)500 V(BR)GES (V)25 I(C) Max. (A)80 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case700m td(on) Max (s) On time delay100n t(r) Max. (s) Rise time200nÂ
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GSI550
Junc-Case700m
delay100nÃ
time200nÃ
time900nÃ
StyleTO-218
Code5-71
NumberTR00500071
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Untitled
Abstract: No abstract text available
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Capacitors - Aluminum SMD for High Temperature I INNOVAT AND TEC O L OGY 140 CRH N HN VISHAY BCcomponents O 19 62-2012 140 CRH SMD Aluminum Capacitor, RoHS Compliant Key Benefits • • • • • • High-temperature operation 125 ºC
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AEC-Q200
MAL214099xxxE3
23-Apr-13
DESCRIBED23-Apr-13
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Untitled
Abstract: No abstract text available
Text: 78Q8392L/A03 Low Power Ethernet Coaxial Transceiver November 2008 DESCRIPTION FEATURES The 78Q8392L/A03 Ethernet Transceiver is a replacement for the SSI/TDK/Teridian 78Q8392L/A02 coax line transmitter/receiver. Only a single resistor value change is required for
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78Q8392L/A03
78Q8392L/A03
78Q8392L/A02
78Q8392L/A03.
10Base5
10Base2
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78Q8392L-CP
Abstract: 27 MHZ rc transmitter teridian 78Q8392L aui isolation transformer circuit diagram of rc transmitter and receiver pulse transformer driver ic 78Q8392L-28CH heart monitor circuit trf 510 transistor 78Q8392L
Text: 78Q8392L Low Power Ethernet Coaxial Transceiver DATA SHEET JULY 2005 DESCRIPTION FEATURES The 78Q8392L Ethernet Transceiver is a low power BiCMOS coax line transmitter/receiver. The device includes analog transmit and receive buffers, a 10 MHz on-board oscillator, timing logic for jabber and
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78Q8392L
78Q8392L
10Base5
10Base2
78Q8392L-CP
27 MHZ rc transmitter
teridian 78Q8392L
aui isolation transformer
circuit diagram of rc transmitter and receiver
pulse transformer driver ic
78Q8392L-28CH
heart monitor circuit
trf 510 transistor
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PDF
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ICL 2025 audio amp
Abstract: 73K224SL-IP STS Bv 1500 current transformers XX111X varistor 594 ph 250v ph 4148 zener diode pdf electra 171-3 MIDCOM 671-8001 75T2091-IH zener PH 4148
Text: TDK Semiconductor Corporation HOW TO REACH US The Worldwide Web: www.tdksemiconductor.com TDK Semiconductor has had an active web site since 1995. We invite you to visit it often for new and updated product information. As new products are introduced and updates made to existing products, this information will
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Untitled
Abstract: No abstract text available
Text: HGTG24N60D1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)25 I(C) Max. (A)40 Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case1.0 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.
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HGTG24N60D1
delay100nÃ
time150nÃ
time900n
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78Q8392LA03
Abstract: 78Q8392LA0328CH 78Q8392L 78Q8392L-28CH 78Q8392L-CP RR23 marking A03 MARK A03 A03 amplifier
Text: 78Q8392L/A03 Low Power Ethernet Coaxial Transceiver November 2008 DESCRIPTION FEATURES The 78Q8392L/A03 Ethernet Transceiver is a replacement for the SSI/TDK/Teridian 78Q8392L/A02 coax line transmitter/receiver. Only a single resistor value change is required for
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78Q8392L/A03
78Q8392L/A03
78Q8392L/A02
78Q8392L/A03.
10Base5
10Base2
78Q8392LA03
78Q8392LA0328CH
78Q8392L
78Q8392L-28CH
78Q8392L-CP
RR23
marking A03
MARK A03
A03 amplifier
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Untitled
Abstract: No abstract text available
Text: SJS Series Sector Antenna SJS515090-16 Innovative Technology for a Connected World 5.5 GHz DUAL-SLANT POLARIZED HIGH-PERFORMANCE 90° SECTOR The Laird Technologies SJS515090-16 5.5 GHz wide-band, dual-slant polarized 90° sector antenna covers frequencies from 5.15-5.85 GHz. Extremely low-side lobes, null fill below the
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SJS515090-16
SJS515090-16
45deg)
-45deg)
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FAG 32 diode
Abstract: SHARP "lot code" FAG 28 diode diode FAG 50 300C LT1W92A FAG 32 FAG 50 diode
Text: PREPARED BY: @ @ S P E C N o . DG–95Y036 DATE : DATE : APPROVED BY FILE No. %24.~97J sHA~p ISSUE PAGE ELECTRONIC COMPONENTS GROUP 22,1995 6 Pages REPRESENTATIVE DIVISION SHARP CORPORATION XM. Nov. OPTO–ELECTRONIC DEVICES DIV. b#3t/fls - SPECIFICATION I
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95Y036
LT1W92A
FAG 32 diode
SHARP "lot code"
FAG 28 diode
diode FAG 50
300C
LT1W92A
FAG 32
FAG 50 diode
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PDF
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APP20
Abstract: No abstract text available
Text: I I APP20VED 3Y: I ELECTRONIC COMPONENTS GIOU? DATE : I I PAGE 8 Pages L REPRESENTATIVE DIVISION r ‘pEc’F’cAT’ON DE’/ICI [ S?ECIFIC.\TION FOR OPTO–ELECTRONIC ‘EVICES ‘lv\ “- Ga? Yello7-grseen Chip LZD Device YODEL ~0. LTLE9?.A ! 1. This specification sheets include the cance~ts under the ccpyright of Sharz Corporation (“Sharp” .
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APP20VED
Time90
120sec
at30C,
APP20
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Untitled
Abstract: No abstract text available
Text: NTC1867 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250öè V(BR)CBO (V) I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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NTC1867
time900n
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS LH 3344-QO DOUBLE HETERO JUNCTION LH 3364-MO DOUBLE HETERO JUNCTION Hyper-Red GaAIAs T1 3mm LED Lamp Package Dimensions in Inches (mm) LED Lamps Surface not Flat 232 (5.9) FEATURES * T1 (3mm) Package * Double Hetero Junction Technology * Choice of Diffused Lens-LH 3364 or Red
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3344-QO
3364-MO
LH3344,
LH3344
LH3364
time-10%
time-90%
053b32b
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PDF
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Untitled
Abstract: No abstract text available
Text: OTDK. 78Q8392L Low Power Ethernet Coaxial Transceiver TDK SEMICONDUCTOR CORP. February 1998 DESCRIPTION FEATURES The 78Q8392L Ethernet Transceiver is a low power BiCMOS coax line transmitter/receiver. The device includes analog transmit and receive buffers, a 10
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78Q8392L
78Q8392L
10Base5
10Base2
28-Pin
78Q8392L-28CH
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33642P
Abstract: No abstract text available
Text: 44E D SIEMENS CMPNTSi OPTO SIEMENS • fla3b32b 0005441 5 BISIEX' LH 3343-PO SINGLE HETRO JUNCTION LH 3363-KO DOUBLE HETRO JUNCTION LH 3344-QO DOUBLE HETRO JUNCTION LH 3364-LO SINGLE HETRO JUNCTION HYPER RED GaAIAs T1 3mm LED LAMP T-MH3 P ack ag e Dim ensions in Inches (mm)
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fla3b32b
3343-PO
3363-KO
3344-QO
3364-LO
LH3363,
LH3363
LH3364,
LH3364
LH3343/3363/3344/3364
33642P
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PDF
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XCKM
Abstract: xck-m
Text: SIEMENS " • * LH -MO DOUBLE HETERO JU N C T IO N *^ DOUBLE HETEBO JUNCTION 834 1-00 3364 Hyper-Red GaAIAs T1 3mm LED Lamp Package Dimensions in Inches (mm) ~ J 024 (0 6 ) 016 (0 4 ) - tF M —^ 028 (07 ) mksi 016 (0 .4 ) *«(5 2) I- .- « - ’« » »
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Lens-LH3364
LH3343/3344
LH3363/3364
3344-QO
3364-MO
IH3344,
time-10%
time-90%
LH3344/3364
XCKM
xck-m
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Untitled
Abstract: No abstract text available
Text: SIEMENS LH 5424-QO DOUBLE HETERO JUNCTION LH 5464-LO DOUBLE HETERO JUNCTION HYPER RED GaAIAs T1% 5mm LED LAMP Maximum Ratings Operating Temperature Range (T0P) . -55°C to + 100°C Storage Temperature Range (Tstg) . -55°C to +100°C
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5424-QO
5464-LO
time-10%
time-90%
LH5424/5464
5424-QO
5464-LO
LH5424)
LH5464)
23b32b
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Led 5mm 35 mA 3V
Abstract: No abstract text available
Text: SIEMENS LH 5424-QO DOUBLE HETERO JUNCTION LH 5464-LO DOUBLE HETERO JUNCTION HYPER RED GaAIAs T1% 5mm LED LAMP Maximum Ratings Operating Temperature Range (T0P) . -55°C to + 100°C Storage Temperature Range (Tstg) . -55°C to +100°C
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5424-QO
5464-LO
T13/4
T13/4
time-10%
time-90%
LH5424/5464
LH5424)
LH5464)
00D6454
Led 5mm 35 mA 3V
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hetero
Abstract: No abstract text available
Text: SIEMENS LH 3344 DOUBLE HETERO JUNCTION LH 3364 DOUBLE HETERO JUNCTION Hyper-Red GaAIAs T1 3 mm LED Lamp Dimensions in inches (mm) GEX6717 FEATURES • Lens -LH3344: rad, dear - LH3364: rad diffused • Double heterojunction in GaAIAs technology • Especially high luminous Intensity
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GEX6717
-LH3344:
LH3364:
100mA,
time-10%
time-90%
3344-QT
3344-R
LH3344-S
LH3344-T
hetero
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3364-MQ
Abstract: LH 3364-MQ
Text: SIEMENS LH 3344-QO DOUBLE HETERO JUNCTION LH 3364-MO DOUBLE HETERO JUNCTION Hyper-Red GaAIAs T1 3mm LED Lamp Package Dimensions in Inches (mm) LED Lamps Surface not Flat 232 (5.9) FEATURES • T1 (3mm) Package * Double Hetero Junction Technology * Choice of Diffused Lens-LH 3364 or Red
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3344-QO
3364-MO
Lens-LH3364
LH3344
LH3364
10rnA)
time-10%
time-90%
3364-MQ
LH 3364-MQ
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LH 3A 05
Abstract: No abstract text available
Text: bOE D • SIEMENS 3 8535bOS 004b253 Ibi « S I E Û LH 3344-QO DOUBLE HETERO JUNCTION LH 3364-MO DOUBLE HETERO JUNCTION Hyper-Red GaAIAs T1 3mm LED Lamp SIEMENS AKTIENGESELLSCHAF Package Dimensions in Inches (mm) <2M ) T 204 ( 5 2 ) _ 1 7 7 (4 5 ) 0 3 1 (0 8 )
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8535bOS
004b253
3344-QO
3364-MO
LH3343/3344
LH3363/3364
3364-MO
LH3344,
time-10%
LH 3A 05
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AT27C256R25JI
Abstract: AT27C258R-20KI 27C256R AT27C256 AT27C256R AT27C256R15LC AT27C256R-12DC AT27C256R20JI AT27C256R-25DM AT27C256R12LI
Text: ATMEL CORP 43E D B 1G74177 ÖD017U 3 BATM AT27C256R Features • Low Power CMOS Operation 100 nA max. Standby 20 mA max. Active at 5 MHz • Fast Read Access. Time-90ns • Wide Selection of JEDEC Standard Packages Including OTP 28-Lead 600 mil Cerdlp and OTP Plastic DIP or SOIC
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0D01711
AT27C256R
-90ns
28-Lead
32-Pad
32-Lead
200mA
AT27C256
Military/883C
28DW6
AT27C256R25JI
AT27C258R-20KI
27C256R
AT27C256R15LC
AT27C256R-12DC
AT27C256R20JI
AT27C256R-25DM
AT27C256R12LI
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