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    Bourns Inc TIP29D-S

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    TIP29D Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TIP29D Bourns NPN SILICON POWER TRANSISTORS Original PDF
    TIP29D Power Innovations NPN SILICON POWER TRANSISTOR Original PDF
    TIP29D Motorola European Master Selection Guide 1986 Scan PDF
    TIP29D Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    TIP29D Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    TIP29D Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    TIP29D Semelab Transistor Selection Guide Scan PDF
    TIP29D Texas Instruments 160 V, 1 A, 30 W, NPN silicon power transistor Scan PDF
    TIP29DF Philips Semiconductors Silicon Epitaxial Power Transistor Original PDF

    TIP29D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TIP29D

    Abstract: TIP29E TIP29F
    Text: TIP29D, TIP29E, TIP29F NPN SILICON POWER TRANSISTORS ● 30 W at 25°C Case Temperature ● 1 A Continuous Collector Current ● 3 A Peak Collector Current ● Customer-Specified Selections Available TO-220 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.


    Original     		PDF TIP29D, TIP29E, TIP29F O-220 TIP29E TIP29D TIP29D TIP29E TIP29F

    Untitled

    Abstract: No abstract text available
    Text: TIP29D Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)160 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)300u° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF TIP29D

    Untitled

    Abstract: No abstract text available
    Text: TIP29DF Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)160 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)14 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u° @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V).70 @I(C) (A) (Test Condition)1.0


    Original     		PDF TIP29DF

    TIP29D

    Abstract: TIP29E TIP29F
    Text: TIP29D, TIP29E, TIP29F NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK ● 30 W at 25°C Case Temperature ● 1 A Continuous Collector Current ● 3 A Peak Collector Current ● Customer-Specified Selections Available JULY 1968 - REVISED MARCH 1997


    Original     		PDF TIP29D, TIP29E, TIP29F O-220 TIP29D TIP29E TIP29D TIP29E TIP29F

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


    Original     		PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


    Original     		PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


    Original     		PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


    Original     		PDF 2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

    TIP29E

    Abstract: No abstract text available
    Text: TIP29D, TIP29E, TIP29F NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK • 30 W at 25°C Case Temperature • 1 A Continuous Collector Current • 3 A Peak Collector Current • Customer-Specified Selections Available JULY 1968 - REVISED MARCH 1997


    OCR Scan     		PDF TIP29D, TIP29E, TIP29F T0-220 TIP29D TIP29E

    TIP290

    Abstract: TIP29CF TIP30CF TIP29AF TIP29BF TIP29DF TIP29F TIP30AF TIP30BF TIP30DF
    Text: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope w ith an electrically insulated mounting base, intended fo r use in audio o u tp u t stages, general purpose am plifier and high-speed switching applications.


    OCR Scan     		PDF T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF OT186 TIP30F, TIP30AF, TIP30BF, TIP30CF TIP290 TIP29CF TIP29AF TIP29BF TIP29DF TIP29F TIP30AF TIP30BF TIP30DF

    TIP29F

    Abstract: TIP30CF TIP29AF TIP29BF TIP29CF TIP29DF TIP30AF TIP30BF TIP30DF TIP30F
    Text: TIP29F TIP29AF; TIP29BF TIP29CF; TIP29DF PHILIPS INTERNATIONAL SbE D • 7110flSb 0043452 SILICON EPITAXIAL POWER TRANSISTORS lib ■ P H I N ' 7 -3 3 -0 7 NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base, intended for use in audio output stages, general purpose amplifier and high-speed switching applications.


    OCR Scan     		PDF TIP29F TIP29AF; TIP29BF TIP29CF; TIP29DF 7110flSb OT186 TIP30F, TIP30AF, TIP30BF, TIP29F TIP30CF TIP29AF TIP29BF TIP29CF TIP29DF TIP30AF TIP30BF TIP30DF TIP30F

    Untitled

    Abstract: No abstract text available
    Text: TEXA S IN ST R -COPTOÏ bS D E ^ j f l T t . l 7 S L 0□ 3 b 744 8 9 6 1 7 2 6 TEXAS INSTR OPTO 62C r 36744 - j j - o ? TIP29, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F N-P-N SILICON POWER TRANSISTORS J U LY 1 9 68 - RE V ISE D OCTO BER 1 9 84 •


    OCR Scan     		PDF TIP29, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F TIP30 T0-220AB

    C2688

    Abstract: C 2688 TEXAS INSTRUMENTS TIP29 c2688 transistor 74ti c2688 L TIP29 TIP29A TIP29B TIP29D
    Text: INSTR -COPTO* bS »E^jflTt.l7SL 0□ 3b744 8 9 6 1 7 2 6 TEXAS INSTR OPTO 62C 36744 r - j j - o ? TIP29, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F N-P-N SILICON POWER TRANSISTORS JU LY 1968 - REVISED OCTOBER 1984 • Designed for Complementary Use With TIP30 series


    OCR Scan     		PDF 003tj744 TIP29, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F TIP30 T0-220AB C2688 C 2688 TEXAS INSTRUMENTS TIP29 c2688 transistor 74ti c2688 L TIP29 TIP29A TIP29B TIP29D

    Untitled

    Abstract: No abstract text available
    Text: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF PHILIPS INTERNATIONAL SbE D • 711002b 0043452 lib ■ P H I N ' SILICO N EPITAXIAL POW ER TR A NSISTO R S T-33-07 NPN silicon power transistors in a S O T 186 envelope w ith an electrically insulated mounting base,


    OCR Scan     		PDF T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF 711002b T-33-07 TIP29F

    Untitled

    Abstract: No abstract text available
    Text: TIP29D, TIP29E, T1P29F NPN SIUCON POWER TRANSISTORS Copyrtghl €> 1997, Pow er Innovations Limited, U K _ • 30 W at 25°C Case Temperature • 1 A Continuous Collector Current • 3 A Peak Collector Current • Customer-Specified Selections Available


    OCR Scan     		PDF TIP29D, TIP29E, T1P29F O-220 TJP29D TIP29D TIP29F

    I8212

    Abstract: No abstract text available
    Text: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL 5 bE D I 7 1 1 DflEb [IDM3 4 bb 7 G 0 « P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications.


    OCR Scan     		PDF TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF OT186 TIP29F, TIP29AF, TIP29BF, TIP29CF I8212

    TIP3I

    Abstract: No abstract text available
    Text: INTEX/ SEMITRONICS CORP 57E I> • Mflti24b 0GD0324 ? discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 General Purpose Amplifier and Switching Applications IC VC B O VCEO A M IV ) PD |W ) Package IMPN 1 40 40 30 TO-220 TIP29 1 60 60 30 TO-220


    OCR Scan     		PDF Mflti24b 0GD0324 O-220 TIP29B TIP30A T1P29A TIP30 TIP29 TIP3I

    Untitled

    Abstract: No abstract text available
    Text: TIP30F TIP30AF; TIP30BF T1P30CF; TIP30DF J SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, fo r use in audio output stages and for general purpose amplifier and high-speed switching applications.


    OCR Scan     		PDF TIP30F TIP30AF; TIP30BF T1P30CF; TIP30DF OT186 TIP29F, TIP29AF, TIP29BF, TIP29CF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF