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Toshiba America Electronic Components TK20A60W,S5VX MOSFET N-CH 600V 20A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK20A60W,S5VX	Tube	60		1	1 $3.84 10 $3.84 100 $3.84 1000 $1.34941 10000 $1.3375	Buy Now
Mouser Electronics	TK20A60W,S5VX		20			1 $3.49 10 $3.47 100 $1.67 1000 $1.33 10000 $1.33	Buy Now
Toshiba America Electronic Components TK20A60W5,S5VX MOSFET N-CH 600V 20A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK20A60W5,S5VX	Tube	31		1	1 $4.12 10 $4.12 100 $4.12 1000 $1.46875 10000 $1.46875	Buy Now
Mouser Electronics	TK20A60W5,S5VX					1 $4.01 10 $3.98 100 $1.91 1000 $1.46 10000 $1.46	Get Quote
Toshiba America Electronic Components TK20A60U(Q,M) MOSFET N-CH 600V 20A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK20A60U(Q,M)	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components TK20A25D,S5Q(M MOSFET N-CH 250V 20A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK20A25D,S5Q(M	Tube			50	1 - 10 - 100 $2.0764 1000 $2.0764 10000 $2.0764	Buy Now
Toshiba America Electronic Components TK20A60W5 Trans MOSFET N-CH 600V 20A 3-Pin TO-220SIS - Rail/Tube (Alt: TK20A60W5,S5VX)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TK20A60W5	Tube		32 Weeks	50	1 - 10 - 100 $1.75075 1000 $1.58625 10000 $1.58625	Buy Now

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TK20A Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
TK20A	Unknown	Discontinued Transistor Data Book 1975	Scan	PDF
TK20A20D	Toshiba	TK20A20D - Nch 150V	Original	PDF
TK20A25D	Toshiba	Transistors - Mosfets	Original	PDF
TK20A25D	Toshiba	Japanese - Transistors - Mosfets	Original	PDF
TK20A25D(Q)	Toshiba	TK20A25D - Trans MOSFET N-CH 250V 20A 3-Pin(3+Tab) TO-220SIS	Original	PDF
TK20A25D,S5Q(M	Toshiba	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 20A TO-220SIS	Original	PDF
TK20A60U	Toshiba	Transistors - Mosfets	Original	PDF
TK20A60U	Toshiba	Japanese - Transistors - Mosfets	Original	PDF
TK20A60U(Q)	Toshiba	TK20A60U - Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220SIS	Original	PDF
TK20A60U(Q,M)	Toshiba	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 20A TO-220SIS	Original	PDF
TK20A60U(STA4,Q,M)	Toshiba	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 20A TO220SIS	Original	PDF
TK20A60W	Toshiba	Transistors - Mosfets	Original	PDF
TK20A60W	Toshiba	Japanese - Transistors - Mosfets	Original	PDF
TK20A60W5,S5VX	Toshiba	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 20A TO-220	Original	PDF

TK20A60W,S5VX	Toshiba	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 20A TO220SIS	Original	PDF

TK20A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TK20A60W MOSFET シリコンNチャネルMOS形 DTMOS TK20A60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.13 Ω (標準) (2)	Original	TK20A60W O-220SIS	PDF
K20A60U Abstract: TK20A60U VDD400 k20a Text: TK20A60U 東芝電界効果トランジスタシリコンNチャネルMOS形 DTMOSⅡ TK20A60U ○ スイッチングレギュレータ用単位: mm z オン抵抗が低い。 : RDS (ON) = 0.165Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 12 S (標準)	Original	TK20A60U SC-67 2-10U1B K20A60U TK20A60U VDD400 k20a	PDF
Untitled Abstract: No abstract text available Text: TK20A20D MOSFETs Silicon N-Channel MOS π-MOS TK20A20D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.07 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)	Original	TK20A20D O-220SIS	PDF
K20A60U Abstract: K20A60 TK20A60U TK-20A TK20A60 Text: TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK20A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)	Original	TK20A60U K20A60U K20A60 TK20A60U TK-20A TK20A60	PDF
TK20A25D Abstract: No abstract text available Text: TK20A25D MOSFETs Silicon N-Channel MOS π-MOS TK20A25D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)	Original	TK20A25D O-220SIS TK20A25D	PDF
Untitled Abstract: No abstract text available Text: TK20A25D MOSFETs Silicon N-Channel MOS π-MOS TK20A25D 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)	Original	TK20A25D O-220SIS	PDF
K20A60T Abstract: k20a60 TK20A60T TK20A60 Text: TK20A60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS TK20A60T Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.165Ω (typ.) • • • High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)	Original	TK20A60T K20A60T k20a60 TK20A60T TK20A60	PDF
K20A60U Abstract: TK20A60U k20a Text: TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK20A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)	Original	TK20A60U K20A60U TK20A60U k20a	PDF
K20A60U Abstract: k20a60 tk20a60u Text: TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK20A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)	Original	TK20A60U K20A60U k20a60 tk20a60u	PDF
Untitled Abstract: No abstract text available Text: TK20A60W5 MOSFETs Silicon N-Channel MOS DTMOS TK20A60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 110 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.15 Ω (typ.) by used to Super Junction Structure : DTMOS	Original	TK20A60W5 O-220SIS	PDF
k20a60u Abstract: TK20A60U 2-10U1B 200909 Text: TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK20A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)	Original	TK20A60U k20a60u TK20A60U 2-10U1B 200909	PDF
Untitled Abstract: No abstract text available Text: TK20A60W MOSFETs Silicon N-Channel MOS DTMOS TK20A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching	Original	TK20A60W O-220SIS	PDF
Untitled Abstract: No abstract text available Text: TK20A60W MOSFETs Silicon N-Channel MOS DTMOS TK20A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching	Original	TK20A60W O-220SIS	PDF
Untitled Abstract: No abstract text available Text: TK20A25D MOSFETs Silicon N-Channel MOS π-MOS TK20A25D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)	Original	TK20A25D O-220SIS	PDF

Untitled Abstract: No abstract text available Text: TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK20A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)	Original	TK20A60U	PDF
k20a60t Abstract: tk20a60t Text: TK20A60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS TK20A60T Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.165 Ω (typ.) • • • High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)	Original	TK20A60T k20a60t tk20a60t	PDF
K20A60T Abstract: TK20A60T VDD400 Text: TK20A60T 東芝電界効果トランジスタシリコンNチャネルMOS形 DTMOS TK20A60T ○ スイッチングレギュレータ用単位: mm z オン抵抗が低い。 : RDS (ON) = 0.165Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 12 S (標準)	Original	TK20A60T SC-67 2-10U1B 20070701-JA K20A60T TK20A60T VDD400	PDF
Untitled Abstract: No abstract text available Text: TK20A25D MOSFET シリコンNチャネルMOS形 π-MOS TK20A25D 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 0.073 Ω (標準) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 250 V)	Original	TK20A25D O-220SIS	PDF
k20a60u Abstract: DTMF TONE GENERATOR TK20A60U Text: TK20A60U 東芝電界効果トランジスタシリコンNチャネルMOS形 DTMOSⅡ TK20A60U ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.165Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 12 S (標準)	Original	TK20A60U SC-67 2-10U1B 20070701-JA k20a60u DTMF TONE GENERATOR TK20A60U	PDF
k20a60 Abstract: No abstract text available Text: TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK20A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)	Original	TK20A60U k20a60	PDF
Untitled Abstract: No abstract text available Text: TK20A60W5 MOSFETs Silicon N-Channel MOS DTMOS TK20A60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 110 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.15 Ω (typ.) by used to Super Junction Structure : DTMOS	Original	TK20A60W5 O-220SIS	PDF
Untitled Abstract: No abstract text available Text: TK20A60W MOSFETs Silicon N-Channel MOS DTMOS TK20A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching	Original	TK20A60W O-220SIS	PDF
Untitled Abstract: No abstract text available Text: TK20A20D MOSFETs Silicon N-Channel MOS π-MOS TK20A20D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.07 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)	Original	TK20A20D O-220SIS	PDF
K20A60U Abstract: K20A60 TK20A60U 0001 TRANSISTOR 100TC Text: TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK20A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)	Original	TK20A60U K20A60U K20A60 TK20A60U 0001 TRANSISTOR 100TC	PDF

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TK20A Price and Stock

Toshiba America Electronic Components TK20A60W,S5VX

Toshiba America Electronic Components TK20A60W5,S5VX

Toshiba America Electronic Components TK20A60U(Q,M)

Toshiba America Electronic Components TK20A25D,S5Q(M

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TK20A Datasheets (15)

TK20A Datasheets Context Search

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K20A60U

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K20A60U

TK20A25D

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K20A60T

K20A60U

K20A60U

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k20a60u

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k20a60t

K20A60T

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k20a60u

k20a60

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K20A60U