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    TK30A06 Price and Stock

    Toshiba America Electronic Components TK30A06N1,S4X

    MOSFET N-CH 60V 30A TO220SIS
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    DigiKey TK30A06N1,S4X Tube 633 1
    • 1 $1.27
    • 10 $1.27
    • 100 $1.27
    • 1000 $0.37454
    • 10000 $0.2925
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    Mouser Electronics TK30A06N1,S4X
    • 1 $0.9
    • 10 $0.552
    • 100 $0.486
    • 1000 $0.35
    • 10000 $0.292
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    Toshiba America Electronic Components TK30A06N1

    Trans MOSFET N-CH 60V 43A 3-Pin TO-220SIS - Rail/Tube (Alt: TK30A06N1,S4X)
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    Avnet Americas TK30A06N1 Tube 11,000 16 Weeks 1
    • 1 $0.2753
    • 10 $0.27144
    • 100 $0.25986
    • 1000 $0.25986
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    Toshiba America Electronic Components TK30A06N1,S4X(S

    Mosfet, N-Ch, 60V, 43A, To-220Sis; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:43A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Toshiba TK30A06N1,S4X(S
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    Newark TK30A06N1,S4X(S Bulk 1,738 1
    • 1 $0.914
    • 10 $0.74
    • 100 $0.518
    • 1000 $0.403
    • 10000 $0.329
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    Quest Components TK30A06N1,S4X(S 1,280
    • 1 $1.185
    • 10 $1.185
    • 100 $0.5925
    • 1000 $0.474
    • 10000 $0.474
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    Chip One Stop TK30A06N1,S4X(S Bulk 171
    • 1 -
    • 10 $0.814
    • 100 $0.364
    • 1000 $0.364
    • 10000 $0.364
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    TK30A06N1,S4X(S Bulk 10
    • 1 -
    • 10 $0.814
    • 100 $0.814
    • 1000 $0.814
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    EBV Elektronik TK30A06N1,S4X(S 19 Weeks 50
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    Toshiba America Electronic Components TK30A06N1S4XS

    MOSFET SILICON N-CHANNEL MOS (U-MOSVIII-H) Power Field-Effect Transistor, 43A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA TK30A06N1S4XS 600
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    TK30A06 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK30A06N1 Toshiba TK30A06N1 - Nch 30V Original PDF
    TK30A06N1 Toshiba Transistors - Mosfets Original PDF
    TK30A06N1 Toshiba Japanese - Transistors - Mosfets Original PDF
    TK30A06N1,S4X Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 30A TO-220 Original PDF

    TK30A06 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor K30A

    Abstract: K30A06J TK30A06J3 K30A06J3 k30a06 k30a TC5080
    Text: TK30A06J3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSⅢ TK30A06J3 Motor Drive Application Unit: mm Load Swithch Application Chopper Regulator and DC−DC Converter Application  Low drain-source ON resistance: RDS (ON) = 19 mohm (typ.)


    Original     		TK30A06J3 transistor K30A K30A06J TK30A06J3 K30A06J3 k30a06 k30a TC5080 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK30A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK30A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original     		TK30A06N1 O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK30A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK30A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original     		TK30A06N1 O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK30A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK30A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original     		TK30A06N1 O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK30A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK30A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original     		TK30A06N1 O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK30A06N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK30A06N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 12.2 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 60 V)


    Original     		TK30A06N1 O-220SIS PDF

    K30A06J3

    Abstract: TK30A06J3A toshiba K30a06j3 k30a06 transistor K30A K30A06J TK30A06J3 K30A06J3A tk30a tk30a06
    Text: TK30A06J3A TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSⅢ TK30A06J3A Switching Regulator Applications z Unit: mm Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) z High forward transfer admittance: |Yfs| = 34 S (typ.) z Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		TK30A06J3A K30A06J3 TK30A06J3A toshiba K30a06j3 k30a06 transistor K30A K30A06J TK30A06J3 K30A06J3A tk30a tk30a06 PDF

    TK30A06N1

    Abstract: No abstract text available
    Text: TK30A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK30A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original     		TK30A06N1 O-220SIS TK30A06N1 PDF

    K30A06J3

    Abstract: k30a06 K30A06J TK30A06J3A k30a K30A06J3A TK30A06J3
    Text: TK30A06J3A 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅢ TK30A06J3A ○ スイッチングレギュレータ用 単位: mm • : RDS (ON) = 19 m Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: |Yfs|= 34 S (標準)


    Original     		TK30A06J3A SC-67 2-10U1B K30A06J3 k30a06 K30A06J TK30A06J3A k30a K30A06J3A TK30A06J3 PDF

    K30A06J3

    Abstract: k30a06 TK30A06J3A K30A06J toshiba K30a06j3
    Text: TK30A06J3A 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅢ TK30A06J3A ○ スイッチングレギュレータ用 単位: mm • : RDS (ON) = 19 m Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: |Yfs|= 34 S (標準)


    Original     		TK30A06J3A SC-67 2-10U1B K30A06J3 k30a06 TK30A06J3A K30A06J toshiba K30a06j3 PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    fast tlp785

    Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
    Text: System Catalog 2012-12 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng –2 Power Supply Circuit Types and Their Applications Switching Power Supplies AC-DC Resonant Half-Bridge Power Supplies Up to around 800 W


    Original     		SCE0024F fast tlp785 TK10A60D 5252 F solar tcv7116 TPH1400ANH PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03 PDF

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028 PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Text: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


    Original     		BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120 PDF

    tpc8118 equivalent replacement

    Abstract: SSM3J307T Zener diode smd 071 A01
    Text: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		BCE0082A tpc8118 equivalent replacement SSM3J307T Zener diode smd 071 A01 PDF

    TK12A10K3

    Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
    Text: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		BCJ0082D BCJ0082C TK12A10K3 tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3 PDF

    gt50jr22

    Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W
    Text: System Catalog May 2014 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g –2 Types and Applications of Switching Power Supplies Types of DC-DC converters embedded in various


    Original     		SCE0024G gt50jr22 fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W PDF

    2sk4110

    Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
    Text: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3


    Original     		BCE0017D S-167 BCE0017E 2sk4110 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent PDF

    TPCA8077

    Abstract: TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A
    Text: 製品カタログ 2010-3 東芝半導体 製品カタログ MOSFET h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		BCJ0082C BCJ0082B TPCA8077 TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A PDF