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Abstract: No abstract text available
Text: 1N957B.1N963B Vishay Telefunken Silicon Z–Diodes Features D Very sharp reverse characteristic D Very high stability D Low reverse current level D VZ–tolerance ± 5% Applications 94 9367 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter
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1N957B.
1N963B
TLx75
200mA
13-Nov-98
D-74025
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1N957B
Abstract: 1N958B 1N959B 1N960B 1N961B 1N962B 1N963B
Text: 1N957B.1N963B Vishay Semiconductors Silicon Z–Diodes Features D Very sharp reverse characteristic D Very high stability D Low reverse current level D VZ–tolerance ± 5% Applications 94 9367 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter
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Original
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PDF
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1N957B.
1N963B
TLx75
13-Nov-98
D-74025
1N957B
1N958B
1N959B
1N960B
1N961B
1N962B
1N963B
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1N5221B
Abstract: 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B 1N5229B 1N5267B
Text: 1N5221B.1N5267B TELEFUNKEN Semiconductors Silicon Z–Diodes Features D Very sharp reverse characteristic D Very high stability D Low reverse current level D VZ–tolerance ± 5% Applications 94 9367 Voltage stabilization Absolute Maximum Ratings Tj = 25_C
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Original
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PDF
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1N5221B.
1N5267B
TLx75
D-74025
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5267B
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