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    TN28F010 Price and Stock

    Rochester Electronics LLC TN28F010-150-G

    TN28F010-150-G
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    DigiKey TN28F010-150-G Bulk 9
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    Rochester Electronics TN28F010-150-G 8,182 1
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    Intel Corporation TN28F010150

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    Bristol Electronics TN28F010150 70
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    Intel Corporation TN28F010-200PIC4

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    Bristol Electronics TN28F010-200PIC4 58
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    Intel Corporation TN28F010-120

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    Bristol Electronics TN28F010-120 8
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    Intel Corporation TN28F010-150

    IC,EEPROM,NOR FLASH,128KX8,CMOS,LDCC,32PIN,PLASTIC
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    Quest Components TN28F010-150 398
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    TN28F010-150 76
    • 1 $7.41
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    • 100 $4.5695
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    Find more TN28F010 price and stock on Findchips.com

    TN28F010 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TN28F010 Unknown 1024K (128K x 8) CMOS FLASH MEMORY Original PDF
    TN28F010-120 Intel 28F010 1024K (128K x 8) CMOS FLASH MEMORY Original PDF
    TN28F010-150 Intel 28F010 1024K (128K x 8) CMOS FLASH MEMORY Original PDF
    TN28F010-200 Intel 1024K CMOS Flash Memory Scan PDF
    TN28F010-90 Intel 28F010 1024K (128K x 8) CMOS FLASH MEMORY Original PDF

    TN28F010 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    28F010

    Abstract: TN28F010 N28F010-120 TN28F010-120 1N914 80C186 tn28f010-150 PLCC pin configuration 80c186 29020
    Text: E 28F010 1024K 128K X 8 CMOS FLASH MEMORY 8 n n n n n n n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  2 Second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% V PP


    Original     		28F010 1024K 28F010 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 N28F010-120 TN28F010 N28F010-120 TN28F010-120 1N914 80C186 tn28f010-150 PLCC pin configuration 80c186 29020 PDF

    M28F512-12C3

    Abstract: 93C56P xicor 28C64 AT28C17-25PC 93C66P m5m28f102j AT28C16-20PC ATMEL serial EEPROM 32K 93C56SN eeprom 28c64
    Text: Main Menu September 2001 Cross Reference Guide Main Menu Main Menu Table of Contents Product Page Number Featured Product Information Serial EEPROM Atmel Fairchild Microchip ST Microelectronics Xicor 3-Wire/Microwire Serial EEPROM Atmel Microchip Fairchild


    Original     		11F-16, M28F512-12C3 93C56P xicor 28C64 AT28C17-25PC 93C66P m5m28f102j AT28C16-20PC ATMEL serial EEPROM 32K 93C56SN eeprom 28c64 PDF

    29F020

    Abstract: 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 28F010 80C186 E28F010 N28F010
    Text: E 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 n n n n n n n Flash Electrical Chip-Erase  1-Mbit: 1 Second Typical Chip-Erase  2-Mbit: 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  1-Mbit: 1 Second Chip-Program


    Original     		28F010 28F020 32-Lead P28F010-90 P28F010-120 P28F010-150 TN28F010-90 TN28F010-120 TN28F010-150 TP28F010-90 29F020 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 80C186 E28F010 N28F010 PDF

    TN80C196KC20

    Abstract: TE28F800B3TA120 N80C51FA1 TN80C196KB16 N80C31BH1 TE28F008B3T115 N80C196KC20 DT28F320S5-90 TE28F160F3T120 N80C3224
    Text: Product Change Notification Please respond to your distributor if you have any issues with the timeline or content of this change. No response from customers will be deemed as acceptance of the change and the change will be implemented pursuant to the key milestones set forth in this attached PCN.


    Original     		PLCC44 PLCC68 TN80C196KC20 TE28F800B3TA120 N80C51FA1 TN80C196KB16 N80C31BH1 TE28F008B3T115 N80C196KC20 DT28F320S5-90 TE28F160F3T120 N80C3224 PDF

    UM61256AK-15

    Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE


    Original     		CP005-1E AS7C1024-12JC AS7C1024-12PC AS7C1024-12TJC AS7C1024-12TPC AS7C1024-15JC AS7C1024-15PC AS7C1024-15TJC AS7C1024-15TPC AS7C1024-20JC UM61256AK-15 UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256 PDF

    um61256ak-15

    Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
    Text: ISSI Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM/NVM Serial EEPROM EPROM FLASH Static RAM SEPTEMBER 1996 CROSS REFERENCE GUIDE E2PROM ATMEL ISSI MIL PACKAGE SYMBOL PC P SC G SC GR AT93C46-10PC AT93C46-10PC-2.7 AT93C46-10SC AT93C46-10SC-2.7


    Original     		AT93C46-10PC AT93C46-10PC-2 AT93C46-10SC AT93C46-10SC-2 AT93C46R-10SC AT93C46R-10SC-2 AT93C46W-10SC AT93C46W-10SC-2 AT93C56-10PC AT93C56-10PC-2 um61256ak-15 w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257 PDF

    28F010

    Abstract: P28F010-150 intel 28F010 N28F010-120 80C186 E28F010-120 28F010-120 28f010-150 290207-010
    Text: 28F010 1024K 128K x 8 CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g 5% VPP Y High-Performance Read


    Original     		28F010 1024K 32-Pin 32-Lead AP-325 28F010-65 28F010-90 28F010 P28F010-150 intel 28F010 N28F010-120 80C186 E28F010-120 28F010-120 28f010-150 290207-010 PDF

    TN28F010-120

    Abstract: 28F010 N28F010-120 TN28F010 intel 28F010 1N914 80C186 n28f010-150 TP28F010
    Text: E 28F010 1024K 128K X 8 CMOS FLASH MEMORY 8 n n n n n n n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  2 Second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% V PP


    Original     		28F010 1024K 28F010 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 N28F010-120 TN28F010-120 N28F010-120 TN28F010 intel 28F010 1N914 80C186 n28f010-150 TP28F010 PDF

    TN28F010

    Abstract: 29020
    Text: 1024K 128K X 28F010 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		1024K 28F010 USA/E69Q/1093/5K/MS TN28F010 29020 PDF

    29020

    Abstract: No abstract text available
    Text: in te i 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm — 10 ju-s Typical Byte-Program — 2 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read


    OCR Scan     		28F010 1024K 28F010-65 28F010-90 29020 PDF

    29020

    Abstract: No abstract text available
    Text: i n y 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash E lectrical C h ip -E rase — 1 S ec o n d T yp ic al C h ip-E rase Q uick Pulse P ro g ram m in g A lg orith m — 10 jus T yp ic al B y te-P ro g ra m — 2 S ec o n d C h ip -P ro g ram • ■ — M axim um L atch -U p Im m u n ity


    OCR Scan     		28F010 1024K 28F010-65 28F010-90 29020 PDF

    PLD intel

    Abstract: intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD
    Text: INTEL CORP MEMORY/PL] / SbE I 4fl2bl7b Q07bBbl T i l « I T L P in te l 28F010 1024K (128K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 2 Second Chip-Program


    OCR Scan     		Q07bBbl 28F010 1024K NonvolaF010-120 TN28F010-120 P28F010-150 N28F010-150 N28F010-90V05 E28F010-120 E28F010-150 PLD intel intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD PDF

    intel 28F010

    Abstract: N28F010-120 28F010 80C186 E28F010
    Text: 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm — 10 ju.s Typical Byte-Program — 2 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % VPP • Command Register Architecture for


    OCR Scan     		28F010 1024K AP-316, AP-325 from3000 28F010-65 28F010-90 4fl2bl75 intel 28F010 N28F010-120 28F010 80C186 E28F010 PDF

    Untitled

    Abstract: No abstract text available
    Text: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write interface ■ Quick-Pulse Programming Algorithm — 10 ¿is Typical Byte-Program


    OCR Scan     		28F010 1024K EF010-120 TF28F010-120 ER-20, ER-24, RR-60, AP-316, AP-325 PDF

    29F020

    Abstract: 28F010 28F020 80C186 E28F010 N28F010 P28F010 29020
    Text: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/M icrocontroller Compatible Write Interface


    OCR Scan     		28F010 28F020 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 E28F010-150 TE28F010-90 29F020 28F020 80C186 E28F010 N28F010 P28F010 29020 PDF

    intel 28F010

    Abstract: 28f01o-120 N28F010-120 28F010 80C186 E28F010 N28F010 P28F010 28f010-200 29020
    Text: 1024K 128K X 28F010 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick Pulse Programming Algorithm — 10 jas Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		28F010 1024K HR-20, ER-24, ER-28, RR-60, AP-316, AP-325 28F010-65 28F010-90 intel 28F010 28f01o-120 N28F010-120 28F010 80C186 E28F010 N28F010 P28F010 28f010-200 29020 PDF

    TN28F010

    Abstract: No abstract text available
    Text: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 )j,s Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		28F010 1024K 32-Pin 32-Lead 28F010-65 28F010-90 TN28F010 PDF

    tegra t30

    Abstract: No abstract text available
    Text: ¡n tg l 1024K 128K X 28F010 8 CMOS FLASH MEMORY • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick Pulse Programming Algorithm — 10 ¡j,s Typical Byte-Program


    OCR Scan     		1024K 28F010 AP-325 28F010-65 28F010-90 405bl tegra t30 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1024K 128K X 28F010 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick Pulse Programming Algorithm — 10 jus Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ±5% Vpp ■ High-Performance Read


    OCR Scan     		1024K 28F010 RR-60, AP-316, AP-325 28F010-65 28F010-90 PDF

    28F010-120

    Abstract: 28f010
    Text: in te l 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Qulck-Pulse Programming Algorithm — 10 jus Typical Byte-Program


    OCR Scan     		28F010 1024K N28F010-120 TN28F010-120 N28F010-150 F28F010-120 F28F010-150 TE28F010-120 TF28F010-120 ER-20, 28F010-120 PDF