transistor equivalent table 557
Abstract: 21045F
Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication
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AGR18030EF
DS04-204RFPP
PB04-101RFPP)
transistor equivalent table 557
21045F
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HV430
Abstract: PWM 220v ac 75E1 HV430WG HV430WG-G MS-013 high power pulse generator with mosfet
Text: Supertex inc. HV430 High-Voltage Ring Generator Features ► ► ► ► ► ► ► 105Vrms ring signal Output over current protection 5.0V CMOS logic control Logic enable/disable to save power Adjustable deadband in single-control mode Power-on reset Fault output for problem detection
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HV430
105Vrms
HV430
DSFP-HV430
A062509
PWM 220v ac
75E1
HV430WG
HV430WG-G
MS-013
high power pulse generator with mosfet
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xenon tube
Abstract: igbt CY25AAJ-8F igbt xenon tube INB14 xenon tube IGBT PTSP0005ZC-A PUSN0005KA-A RD3CYD08 RD3CYD08CME RD3CYD08VSE
Text: RD3CYD08 IGBT Driver RJJ03D0269-0200 Rev.2.00 2005.10.06 概要 RD3CYD08 は, 5 ピンパッケージに 2 入力 AND ゲートで構成されています。 本製品は, ルネサス製 IGBT のドライバ用 IC として最適化しています。 特長
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RD3CYD08
RJJ03D0269-0200
RD3CYD08CME
RD3CYD08VSE
RD3CYD08WPE
PTSP0005ZC-A
PUSN0005KA-A
SXBG0005LB-A
xenon tube
igbt CY25AAJ-8F
igbt xenon tube
INB14
xenon tube IGBT
PTSP0005ZC-A
PUSN0005KA-A
RD3CYD08
RD3CYD08CME
RD3CYD08VSE
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Megger cbt3
Abstract: Megger RCD testers cbt3 avo AVO International CBT3 IEC 1010-1 General Safety Requirements
Text: - MEGGER RCD TESTER ^3 INTERNATIONAL RCD TESTER AVO A robust instrument for testing most modern types of residual current devices MEGGER CBT3 Fully tests circuit breakers with standard ratings between 6 mA and 500 mA. Intelligent testing of ‘S’ and ‘G’ type selective
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180MIDOLEFIELQ
Megger cbt3
Megger
RCD testers
cbt3 avo
AVO International
CBT3
IEC 1010-1 General Safety Requirements
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Untitled
Abstract: No abstract text available
Text: \ T f7 C M C-421000B9 1 ,0 4 8 ,5 7 6 x 9-BIT c m o s d y n a m ic r a m m o d u le * w N E C Electronics Inc. PRELIM IN A RY INFORMATION Description Pin Configurations The MC-421000B9 is a nibble-mode 1,048,576-word by 9-bit CMOS dynamic RAM module designed to operate
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MC-421000B9
576-word
//PD421001
C-421000B9
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VcO 869
Abstract: No abstract text available
Text: MLS9109-00881 M/A-COM Surface Mount Frequency Synthesizer CDMA 869 -894 MHz Features • Integrated VCO/PLL • Miniature SMT Package • Low Phase Noise • +5V Operation 12 Lead Package 12 11 10 9 8 annnn M/ A- COM LTD PART NO. DATE CODE Description The M LS9109-00881 synthesizer design integrates a high perfor
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MLS9109-00881
LS9109-00881
VcO 869
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rlr20c
Abstract: No abstract text available
Text: DISK # E7 DASH NO DWG SIZE B DATA CONTAINED IN THIS DOCUMENT IS PROPRIETARY TO TROMPETER ELECTRONICS INC. -AND SHALL NOT BE DISCLOSED. COPIED OR USED FOR PROCUREMENT OR MANUFACTURE WITHOUT EXPRESS WRITTEN PERMISSION. D DESCRIPTION TYPE -1 TNP1-1 -2 TNPl-2-/§\ TERM WITH 2.5 BRASS CHAIN
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TNP1-5-73V
RLR20C
rlr20c
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2953
Abstract: IDN2934W DN2953B
Text: *2953 AND 2 9 5 4 FULL-BRÌDGE P\VM MOTOR DRIVERS U D N 2953B FU N C T IO N A L KI.OCK DIAGRAM Tf MPERATUftC IW C üira U* 004 1 U D N 2 954W L ^ H * «I CO* ID N 2 9 5 4 W T E M P fn A T U H E IN *C t<m%m»*t+ t r it ìi ta ble Output Enable Phase low Low
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DN2953B
UDN295IW
IDN2934W
ki2/l70
2953
IDN2934W
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diodes ir
Abstract: 1N3595 marking D03S
Text: Micro/semi Corp. ? Tnp diocie experts -, MV SANTA A NA, CA F o r m o r e i n f o r m a ti o n call: 714 9 7 9 - 8 2 2 0 FEATURES G EN ERAL PURPOSE DIO DES • HIGH CONDUCTANCE • EXTREMELY LOW REVERSE CURRENT • ULTRA-STABLE OPERATION UP TO +150°C • VO IDLESS HERMETICALLY SEALED GLASS PACKAGE
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1N3595
MIL-S-19500-241
diodes ir
1N3595
marking D03S
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rg3j 005
Abstract: 4948 1N5626 HP214A HP-214A
Text: G P R 3A GLASS AMP II 3A Toper ~ 65" + 175 C T.t r K,! 300 C Type Types Typen G 3A G 3B G 3D G 3G G 3J G 3K G 3M lo V rrm (V) (1N 5624) (1N 5625) (1N5626) (1N 5627) 50 100 200 400 600 800 1000 FAST RECOVERY-GPR Topor = - 6 5 ° + 175 C — RG 1A RG 1B RG 1D
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1N5626)
HP-214A
rg3j 005
4948
1N5626
HP214A
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Untitled
Abstract: No abstract text available
Text: MFC M C-421000B8 1 ,0 4 8 ,5 7 6 X 8-BIT c m o s d y n a m ic r a m m o d u le NEC Electronics Inc. PRELIM IN A RY INFORMATION Description Pin Configurations The MC-421000B8 isa nibble-mode 1,048,576-word by 8-bit dynamic R A M module designed to operate from a
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MC-421000B8
576-word
/uPD421001
C-421000B8
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Untitled
Abstract: No abstract text available
Text: / . j 1N3595 Micro/semi Corp. / [☆JANS* $ Tnp diode experts SANTA ANA, CA F o r m o r e in f o r m a ti o n call: 714 9 7 9 - 8 2 2 0 FEATURES G EN ERAL PURPOSE DIO DES • HIGH CONDUCTANCE • EXTREMELY LOW REVERSE CURRENT • ULTRA-STABLE OPERATION UP TO +150°C
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1N3595
MIL-S-19500-241
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SFH4423
Abstract: No abstract text available
Text: SFH 4423/4424 LOW POWER LASERDIODE SM FIBER PIGTAIL _ P re lim in a ry D ata Sheet Package Dimensions in mm SFH4423 10.7 10. ' , , 12 Min. 1 -4 2.3 2.0 - 1 16.2 15.8 ~T E L MD CD - è 0.55 0.4 - * LD r 6.5 1 5.5 15 11
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SFH4423
SFH4424
SFH4423/4424
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Untitled
Abstract: No abstract text available
Text: DEVICE TYPf PACKAGE BVCEO BVCBO BVEBO ICBO VCB VI M I N I V M IN V | M IN |m A I MAX I V) HFE @ VC & 1C MI N - M A X |V ) 1-t.AI COB FT l>l| M A X IM Mil P N 3M 3 PN3644 PN3645 PN3646 PN366S NPN PNP PNP NPN NPN TO-92 (72) TO-92 (72) TO-92 (72) TO-92 (72)
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PN3644
PN3645
PN3646
PN366S
PN3666
PN3673
PN3678
PN3691
PN369?
PN403Q
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smd code marking NEC
Abstract: fuse smd code y smd marking gz smd fuse marking code K k smd fuse marking code national semiconductor thyristor 3T230B GW smd fuse marking code 1 smd fuse marking code n smd fuse marking 20
Text: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210 La Quinta, CA. U.S.A. 92253 Tel: 760*564-8656 * Fax: 760-564-2414 TWO TERMINAL THYRISTOR SERIES SURFACE MOUNT AND AXIAL LEAD TWO TERMINAL THYRISTOR 3T SURGE SUPPRESSOR DEVICE SYMBOL FEATURES UL94V-0 Flammability Classification
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UL94V-0
IEC100-4-4
UL1459,
DO-15
3T3108
3T310A
GR-1Q89-CORE.
smd code marking NEC
fuse smd code y
smd marking gz
smd fuse marking code K
k smd fuse marking code
national semiconductor thyristor
3T230B GW
smd fuse marking code
1 smd fuse marking code n
smd fuse marking 20
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TK111XXM
Abstract: TK11
Text: REFERENCE DATA [ SPECIFICATION Voltage regulator with on/off TKlllxxM CL xx P art: Correspondence list Output Voltage Voltage Code Output Voltage Voltage Code Output Voltage Voltage Code Output Voltage Voltage Code 4.0V 4.1 40 41 5.0V 50 4.2 42 2.0V 2.1 2.2
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DB3-K007
60mVor
TK111XXM
TK11
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Untitled
Abstract: No abstract text available
Text: ADV M ICR O -CM EM O R Y} I t D E | 0 B S 7 5 2 fl D OEbM O? Am90CL257 Low-Power 256K x 1 CMOS Static Column Mode DRAM > OVERVIEW 3 The 256K x 1 CMOS Low-Powér 'L' DRAM versions share common functional descriptions, DC and AC characteristics with the corresponding standard CMOS (non-'L1) versions. The only additions to these sections are:
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Am90CL257
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S7235B2
Abstract: S7235A2
Text: S-7235 Series PULSE/DTMF SWITCHABLE DIALER The S -7235 Series is a CM OS DTM F/PULSE switchable dialer, which has a 32-digit redial memory. Input is m ade from keyboard or CPU. Features • Functions Flash • Operating supply voltage PULSE mode: 1.5 V to 5.5 V
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S-7235
32-digit
A1234M3
QDD2777
G00277A
S7235B2
S7235A2
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Untitled
Abstract: No abstract text available
Text: S G S-T HOnSON D7C D | S T S 3 7 0 0 1 M Ì SD 7 C O S /H IO S INTEGRATED CIRCUIT 7929225 S G S 41C 08964 SEMICONDUC TOR ""CORP o r - ¥ J - 2 j HEX BUFFER • • • • • • • • 1 T T L -LO A D OUTPUT DRIVE C APAB ILITY 2 OUTPUT-DISABLE CONTROLS
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4503B
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LH2108
Abstract: LH2108A LH2108AD LH2108D LH2308D LM108 LM108A
Text: LH2108/LH2308 LH2108/LH2308 Dual Super-Beta Operational Amplifier GENERAL DESCRIPTION FEATURES The LH 21 08A /L H 2 308 A and LH 21 08/L H 230 8 series of dual operational am plifiers consist of tw o LM 108A or LM 108 type op am ps in a single herm etic package. Featur
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LH2108/LH2308
LH2108A/LH2308A
LH2108/LH2308
LM108A
LM108
LH2108A:
LH2108:
LH2108D
LH2108AD
16-PIN
LH2108
LH2108A
LH2308D
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2M X 8-Bit Dynamic RAM HYB 5117800BSJ-50/-60/-70 Advanced Inform ation • • • • 2 097 152 w ords by 8-bit organization 0 to 70 "C operating tem perature Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 version)
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5117800BSJ-50/-60/-70
fiE35LD5
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la4620
Abstract: 2SC1348 l02s vn02 DS442 mylar capacitors 2071TS
Text: Ordering number: EN 3607A Monolithic Linear 1C NO.3607A á SAMYO LA4620 Two-channel Audio Power Amplifier I PINOUT OVERVIEW The LA4620 is a two-channel high-power audio ampli fier for automotive stereo and general-purpose audio amplification equipment. vcc [V
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LA4620
LA4620
23-pin
2SC1348
l02s
vn02
DS442
mylar capacitors
2071TS
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LTCM
Abstract: No abstract text available
Text: M ITEL DGT409BC A6565 Gate Turn-off Thyristor SEMICONDUCTOR DS4414-3.3 July 1998 Supersedes March 1998 version, DS4414-2.1 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse
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DS4414-2
DGT409BC
A6565
DS4414-3
DGT409
LTCM
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1N916
Abstract: AM29821 D2825 SN74ALS29821
Text: SN74ALS29821 10-BIT BUS INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS D2825, JAN U AR Y 19B6 - REVISED MARCH 1988 Functionally Equivalent to AM D A M 29821 and A M 29 822 Provides Extra Data Width Necessary for Wider Address/Data Paths or Buses with Parity •
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SN74ALS29821
10-BIT
D2825,
AM29821
AM29822
300-mil
1N916
D2825
SN74ALS29821
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