TO-220
Abstract: TO247 FULLPAK TO-247 TO220
Text: TO-220 FullPak and TO-247 Leadform Options TO-220 FullPak Leadform Options Lead Assignments 1 - Gate 2 - Drain 3 - Source Internet: http://www.irf.com All dimensions in millimetres inches 3 TO-220 FullPak and TO-247 Leadform Options TO-220 FullPak Leadform Options cont’d
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O-220
O-247
TO-220
TO247
FULLPAK
TO-247
TO220
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LEADFORM
Abstract: 9840 0642 8801 221-837
Text: TO-220 FullPak and TO-247 Leadform Options TO-247 Leadform Options Lead Assignments 1 - Gate 2 - Drain 3 - Source Internet: http://www.irf.com All dimensions in millimetres inches 5 TO-220 FullPak and TO-247 Leadform Options TO-247 Leadform Options Lead Assignments
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O-220
O-247
475-1897OGNA.
S-163
mjw/05/97
LEADFORM
9840
0642
8801
221-837
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Untitled
Abstract: No abstract text available
Text: TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 800 V RDS on (max) 1.05 Ω Qg 53 nC Features Block Diagram ● Low RDS(ON) 1.05Ω (Max.) ● Low gate charge typical @ 53nC (Typ.)
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TSM10N80
O-220
ITO-220
50pcs
TSM10N80CZ
TSM10N80CI
900ppm
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF730 MOSFET N-Channel FEATURES TO-220 z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement 1. GATE 2. DRAIN
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O-220
IRF730
O-220
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF840 MOSFET N-Channel FEATURES TO-220 z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement 1. GATE 2. DRAIN
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O-220
IRF840
O-220
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF630 MOSFET N-Channel FEATURES z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement TO-220 1. GATE 2. DRAIN
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O-220
IRF630
O-220
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF840 MOSFET N-Channel FEATURES TO-220 z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement 1. GATE 2. DRAIN
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O-220
IRF840
O-220
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF640 MOSFET N-Channel FEATURES z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement TO-220 1. GATE 2. DRAIN
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O-220
IRF640
O-220
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF640 MOSFET N-Channel FEATURES z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement TO-220 1. GATE 2. DRAIN
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O-220
IRF640
O-220
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF630 MOSFET N-Channel FEATURES TO-220 z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement 1. GATE 2. DRAIN
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O-220
IRF630
O-220
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF730 MOSFET N-Channel FEATURES TO-220 z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement 1. GATE 2. DRAIN
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O-220
IRF730
O-220
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Untitled
Abstract: No abstract text available
Text: STP40NF10 N-channel 100 V, 0.025 Ω, 50 A TO-220 low gate charge STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STP40NF10 100 V < 0.028 Ω 50 A • Exceptional dv/dt capability ■ Low gate charge ■ 100% avalanche tested 1 2 3 TO-220
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STP40NF10
O-220
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P40NF10
Abstract: STP40NF10 d1 marking code dpak transistor p40nf S2180
Text: STP40NF10 N-channel 100 V, 0.025 Ω, 50 A TO-220 low gate charge STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STP40NF10 100 V < 0.028 Ω 50 A • Exceptional dv/dt capability ■ Low gate charge ■ 100% avalanche tested 3 1 2 TO-220
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STP40NF10
O-220
P40NF10
STP40NF10
d1 marking code dpak transistor
p40nf
S2180
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors CJP75N80 N-Channel Power MOSFET TO-220 General Description The CJ75N80 uses advanced trench technology and design to Provide excellent RDS on with low gate charge. Good stability and
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O-220
CJP75N80
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CJ75N80
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DIODE B12
Abstract: B12 DIODE MOSFET 800V 3A MOSFET 800V 15A DIODE B12 41 MOSFET 50V 100A TO-220 DIODE B12 48 diode 800v DIODE B12 45 N-channel Power MOSFET
Text: TSM3N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 800 4.2 @ VGS =10V 1.5 General Description TO-251 (IPAK) The TSM3N80 TO-252 (DPAK) N-Channel Power MOSFET is produced by new advance planar process. This
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TSM3N80
O-220
ITO-220
O-251
O-252
TSM3N80
TSM3N80CH
TSM3N80CP
TSM3N80CZ
O-251
DIODE B12
B12 DIODE
MOSFET 800V 3A
MOSFET 800V 15A
DIODE B12 41
MOSFET 50V 100A TO-220
DIODE B12 48
diode 800v
DIODE B12 45
N-channel Power MOSFET
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TSM4N60CH
Abstract: power mosfet 600v 18BSC ITO-220
Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
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TSM4N60
O-220
ITO-220
O-251
O-252
TSM4N60
TSM4N60CH
power mosfet 600v
18BSC
ITO-220
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DIODE F10
Abstract: TSM4N60CZ TO-252 N-channel MOSFET
Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
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TSM4N60
O-220
ITO-220
O-251
O-252
TSM4N60
DIODE F10
TSM4N60CZ
TO-252 N-channel MOSFET
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Untitled
Abstract: No abstract text available
Text: TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 900 5.1 @ VGS =10V 1.25 General Description TO-251 (IPAK) The TSM3N90 TO-252 (DPAK) N-Channel Power MOSFET is produced by new advance planar process. This
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TSM3N90
O-220
ITO-220
O-251
O-252
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A12 diode
Abstract: MOSFET 900V TO-220 MOSFET 50V 100A TO-220 power mosfet 900v
Text: TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 900 5.1 @ VGS =10V 1.5 General Description TO-251 (IPAK) The TSM3N90 TO-252 (DPAK) N-Channel Power MOSFET is produced by new advance planar process. This
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TSM3N90
O-220
ITO-220
O-251
O-252
TSM3N90
TSM3N90CH
TSM3N90CP
TSM3N90CZ
O-251
A12 diode
MOSFET 900V TO-220
MOSFET 50V 100A TO-220
power mosfet 900v
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Untitled
Abstract: No abstract text available
Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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TSM4NB60
O-220
ITO-220
O-251
O-252
TSM4NB60
TSM4NB60CH
TSM4NB60CP
TSM4NB60CZ
O-251
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ITO-220
Abstract: TSM4N60CH
Text: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
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TSM4N60
O-220
ITO-220
O-251
O-252
TSM4N60
ITO-220
TSM4N60CH
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Untitled
Abstract: No abstract text available
Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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TSM4NB60
O-220
ITO-220
O-251
TSM4NB60
O-252
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TSM4NB60CP
Abstract: No abstract text available
Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This
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TSM4NB60
O-220
ITO-220
O-251
TSM4NB60
O-252
TSM4NB60CP
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Untitled
Abstract: No abstract text available
Text: Outline drawings Dimensions in mm and inches 1 mm = 0.0394" 1 TO-251 AA TO-252 AA (D PAK) TO-220 AB TO-220 AC Vf". J J ] r •» r ^ T f ' ' | j1 -■ 1 - IV ■ ' " 1. 2. 3. 4. Gate Dram Source Drain Sack heatsink Millimeter din. Max. 2.19 0.89 2.38 1.14
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O-251
O-252
O-220
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