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    TO247 Search Results

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    TO247 Price and Stock

    t-Global Technology CP33-TO247-28.5-17.5-5.8-0.45

    THERM PAD 28.5X17.5X5.8MM GRAY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CP33-TO247-28.5-17.5-5.8-0.45 Box 35,308 1
    • 1 $0.64
    • 10 $0.565
    • 100 $0.5002
    • 1000 $0.44269
    • 10000 $0.40636
    		Buy Now

    t-Global Technology XL25W-TO247-22-17-0.64

    CERAMIC HEAT SPREADER 22X17MM WH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey XL25W-TO247-22-17-0.64 Bulk 818 1
    • 1 $0.53
    • 10 $0.47
    • 100 $0.4159
    • 1000 $0.36806
    • 10000 $0.33786
    		Buy Now

    onsemi NCP-NCV51152TO2474LGEVB

    EVAL BOARD FOR NCV51152
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NCP-NCV51152TO2474LGEVB Box 5 1
    • 1 $164.81
    • 10 $155.875
    • 100 $155.875
    • 1000 $155.875
    • 10000 $155.875
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    Avnet Americas NCP-NCV51152TO2474LGEVB Bulk 5
    • 1 $155.875
    • 10 $155.875
    • 100 $155.875
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    Mouser Electronics NCP-NCV51152TO2474LGEVB 5
    • 1 $155.87
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    onsemi NCP-NCV51752TO2474LGEVB

    EVB WITH TO-247-4L TYPE POWER S/
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NCP-NCV51752TO2474LGEVB Box 5 1
    • 1 $164.81
    • 10 $155.875
    • 100 $155.875
    • 1000 $155.875
    • 10000 $155.875
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    Avnet Americas NCP-NCV51752TO2474LGEVB Bulk 5
    • 1 $159.8718
    • 10 $159.8718
    • 100 $159.8718
    • 1000 $159.8718
    • 10000 $159.8718
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    Mouser Electronics NCP-NCV51752TO2474LGEVB 5
    • 1 $155.87
    • 10 $155.87
    • 100 $155.87
    • 1000 $155.87
    • 10000 $155.87
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    onsemi NCP-NCV51152TO2473LGEVB

    EVAL BOARD FOR NCV51152
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NCP-NCV51152TO2473LGEVB Box 5 1
    • 1 $164.81
    • 10 $155.875
    • 100 $155.875
    • 1000 $155.875
    • 10000 $155.875
    		Buy Now
    Avnet Americas NCP-NCV51152TO2473LGEVB Bulk 5
    • 1 $155.875
    • 10 $155.875
    • 100 $155.875
    • 1000 $155.875
    • 10000 $155.875
    		Buy Now
    Mouser Electronics NCP-NCV51152TO2473LGEVB 5
    • 1 $155.87
    • 10 $155.87
    • 100 $155.87
    • 1000 $155.87
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    Find more TO247 price and stock on Findchips.com

    TO247 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TO-247 Harris Semiconductor HARRIS HYPER-FAST RECOVERY RECTIFIER PRODUCT LINE Original PDF
    TO247 Unknown HEXFET TO-247AC Outline Dimensions are shown in millimeters (inches) Original PDF
    TO247 STMicroelectronics TO247 - ASD & DISCRETES - TOURS Original PDF
    TO247AC Unknown HEXFET TO-247AC Outline Dimensions are shown in millimeters (inches) Original PDF
    TO-247AC Package International Rectifier Case Outline and Dimensions Original PDF
    TO-247AC Package International Rectifier Case Outline and Dimensions Original PDF
    TO247C Unknown HEXFET TO-247AC Outline Dimensions are shown in millimeters (inches) Original PDF
    TO-247 Package Intersil 2 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE (FOR RECTIFIERS ONLY) Original PDF
    TO-247 Package Intersil 3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE Original PDF
    TO-247 Package Intersil 5 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE Original PDF

    TO247 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    11N60CFD

    Abstract: SPW11N60CFD 11N60C
    Text: SPW11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		SPW11N60CFD P-TO247 Q67040-S4619 11N60CFD 11N60CFD SPW11N60CFD 11N60C PDF

    infineon 6r045

    Abstract: mosfet 6r045 IPW60R045CS 6r045 infineon 6r045 PG-TO-247-3 Q67045A5061 JESD22 PG-TO247-3 IPW60R045
    Text: IPW60R045CS CoolMOS TM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R045CS PG-TO247-3 Q67045A5061 6R045 infineon 6r045 mosfet 6r045 IPW60R045CS 6r045 infineon 6r045 PG-TO-247-3 Q67045A5061 JESD22 PG-TO247-3 IPW60R045 PDF

    Untitled

    Abstract: No abstract text available
    Text: STW69N65M5-4 N-channel 650 V, 0.037 Ω typ., 58 A, MDmesh V Power MOSFET in a TO247-4 package Datasheet - production data Features Order code VDS @ TJmax RDS on max ID STW69N65M5-4 710 V 0.045 Ω 58 A • Higher VDS rating 2 • Higher dv/dt capability


    Original     		STW69N65M5-4 O247-4 O247-4 AM10177v1 DocID024925 PDF

    am1017

    Abstract: No abstract text available
    Text: STW57N65M5-4 N-channel 650 V, 0.056 Ω typ., 42 A, MDmesh V Power MOSFET in a TO247-4 package Datasheet − production data Features Order code VDS @ TJmax RDS on max ID STW57N65M5-4 710 V 0.063 Ω 42 A • Higher VDS rating 1 2 • Higher dv/dt capability


    Original     		STW57N65M5-4 O247-4 O247-4 AM10177v1 DocID024559 am1017 PDF

    STW55NE10

    Abstract: No abstract text available
    Text: STW55NE10 N - CHANNEL 100V - 0.021Ω - 55A - TO247 STripFET POWER MOSFET TYPE STW55NE10 • ■ ■ ■ ■ VDSS R DS on ID 100 V <0.027 Ω 55 A TYPICAL RDS(on) = 0.021 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC


    Original     		STW55NE10 O-247 STW55NE10 PDF

    f1010n

    Abstract: A 0412 MHP100101F
    Text: 100W TO247 High Power Resistors MHP 100 • · · · · · · Non-inductive, high power resistor. Thermally enhanced Industry standard TO-247 package. Extremely Low thermal resistance, 1.3 °C/W resistor hot spot to metal tab. Complete thermal flow design available for easy


    Original     		O-247 0R100 f1010n A 0412 MHP100101F PDF

    BUV48A

    Abstract: TIP35CW failure report IGBT B505 BDW83C BU941ZP TIP142 TIP2955 TIP34C tip35
    Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN APM-PWR/07/2362 Notification Date 03/19/2007 Package change from TO218 to TO247 for Power Bipolar products PWR - PWR BIP/ IGBT/ RF 1/14 PCN APM-PWR/07/2362 - Notification Date 03/19/2007 Table 1. Change Identification


    Original     		APM-PWR/07/2362 APM-PWR/07/2362 BUV48A TIP35CW failure report IGBT B505 BDW83C BU941ZP TIP142 TIP2955 TIP34C tip35 PDF

    MBR4015LWT

    Abstract: MBR4015LWTG
    Text: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		MBR4015LWT MBR4015LWT/D MBR4015LWT MBR4015LWTG PDF

    G60T120

    Abstract: IGW60T120 IGBT 1200V 60A PG-TO-247-3
    Text: IGW60T120 TrenchStop Series Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • • • • • • C Best in class TO247 Short circuit withstand time – 10 s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 1200 V applications


    Original     		IGW60T120 G60T120 IGW60T120 IGBT 1200V 60A PG-TO-247-3 PDF

    11n60cfd

    Abstract: SPW11N60CFD 11N6
    Text: SPW11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		SPW11N60CFD PG-TO247 Q67040-S4619 11N60CFD 11n60cfd SPW11N60CFD 11N6 PDF

    20n60s5* values

    Abstract: 20n60s5 SPW20N60S5 equivalent 20N60S5 TO247 SPW20N60S5
    Text: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 20n60s5* values 20n60s5 SPW20N60S5 equivalent 20N60S5 TO247 SPW20N60S5 PDF

    P12NK80

    Abstract: VDD400 w12nk80z B12NK80Z stw12nk80z p12nk80z W12NK80
    Text: STB12NK80Z STP12NK80Z - STW12NK80Z N-CHANNEL 800V - 0.65Ω - 10.5A - TO220-D²PAK-TO247 Zener-Protected SuperMESH MOSFET General features VDSS Type STB12NK80Z STP12NK80Z STW12NK80Z Package RDS on 800 V <0.75 Ω 800 V <0.75 Ω 800 V <0.75 Ω ID Pw 10.5 A


    Original     		STB12NK80Z STP12NK80Z STW12NK80Z O220-D PAK-TO247 O-220 O-247 P12NK80 VDD400 w12nk80z B12NK80Z stw12nk80z p12nk80z W12NK80 PDF

    BFC42

    Abstract: No abstract text available
    Text: SEME BFC42 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		BFC42 BFC42 PDF

    11N60S5

    Abstract: SPW11N60S5
    Text: SPW11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 11N60S5 SPW11N60S5 PDF

    SML5020BN

    Abstract: W112A
    Text: SEME SML5020BN LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC


    Original     		SML5020BN 380mS SML5020BN W112A PDF

    47N60

    Abstract: 47N60S5 SPW47N60S5 P-TO247
    Text: SPW47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPW47N60S5 P-TO247 Q67040-S4240 47N60S5 47N60 47N60S5 SPW47N60S5 P-TO247 PDF

    6r045

    Abstract: mosfet 6r045 IPW60R045Cp 6R045 infineon 6r045 IPW60R045CP SP000067149 JESD22 PG-TO-247-3 D44 MARKING CODE
    Text: IPW60R045CP CoolMOS Power Transistor Product Summary Features V DS @ Tjmax • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R045CP PG-TO247-3-1 SP000067149 6R045 009-134-A O-247 6r045 mosfet 6r045 IPW60R045Cp 6R045 infineon 6r045 IPW60R045CP SP000067149 JESD22 PG-TO-247-3 D44 MARKING CODE PDF

    Untitled

    Abstract: No abstract text available
    Text: TO -24 7 BYC30W-600P Hyperfast power diode 10 February 2014 Product data sheet 1. General description Hyperfast power diode in a SOD142 2-lead TO247 plastic package. 2. Features and benefits • • • • Low leakage current Low thermal resistance Low reverse recovery current


    Original     		BYC30W-600P OD142 PDF

    Untitled

    Abstract: No abstract text available
    Text: TrenchStop IKW40T120 Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C •           Best in class TO247 Short circuit withstand time – 10s


    Original     		IKW40T120 PDF

    transistor 20N60s5

    Abstract: SPW20N60S5
    Text: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPW20N60S5 PG-TO247 SPW20N60S5 Q67040-S4238 20N60S5 transistor 20N60s5 PDF

    mosfet 6r045

    Abstract: IPW60R045Cp 6R045 230 AC to 5V dc smps sd 431 transistor infineon 6r045 IPW60R045CP SP000067149 6R045
    Text: IPW60R045CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R045CP PG-TO247-3-1 PG-TO247-3-1 SP000067149 6R045 mosfet 6r045 IPW60R045Cp 6R045 230 AC to 5V dc smps sd 431 transistor infineon 6r045 IPW60R045CP SP000067149 6R045 PDF

    20n60cfd

    Abstract: No abstract text available
    Text: SPW20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		SPW20N60CFD PG-TO247 SPW20N60CFD Q67040-S4617 20N60CFD 20n60cfd PDF

    11n60cfd

    Abstract: No abstract text available
    Text: SPW11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		SPW11N60CFD PG-TO247 SPW11N60CFD Q67040-S4619 11N60CFD 11n60cfd PDF

    Untitled

    Abstract: No abstract text available
    Text: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		MBR4015LWT MBR4015LWT/D PDF