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    TO-5 METAL CASE FOR TRANSISTOR Search Results

    TO-5 METAL CASE FOR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    TO-5 METAL CASE FOR TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TYPE 2N118 N-P-N GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO. DL-S 5 8 8 9 7 , MARCH 1 9 5 8 18 to 40 beta spread Specifically desigaed for high gaia at high teaiperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grains.


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    2N118 X10-6 PDF

    BSS44

    Abstract: P008B
    Text: BSS44 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A.


    Original
    BSS44 BSS44 P008B PDF

    BSS44

    Abstract: No abstract text available
    Text: BSS44  SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A.


    Original
    BSS44 BSS44 PDF

    BSS44

    Abstract: No abstract text available
    Text: BSS44 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A.


    Original
    BSS44 BSS44 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS44 SILICON PNP TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A. INTERNAL SCHEMATIC DIAGRAM


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    BSS44 BSS44 P008B PDF

    P008B

    Abstract: "PNP Transistor" BSS44
    Text: BSS44 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A.


    Original
    BSS44 BSS44 P008B "PNP Transistor" PDF

    bss44

    Abstract: No abstract text available
    Text: BSS44 SILICON NPN TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A. TO-39 INTERNAL SCHEMATIC DIAGRAM


    Original
    BSS44 BSS44 PDF

    BSS44

    Abstract: No abstract text available
    Text: BSS44 SILICON NPN TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A. TO-39


    Original
    BSS44 BSS44 PDF

    2N118

    Abstract: X10-4 I15-0 ScansUX7
    Text: TYPE 2N118 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T IN N O . D L -S 5 8 8 9 7 , M A R C H 1 9 5 8 18 to 4 0 beta sprawl SpedficaHy designa i for Ugh gaia at htgii t— porat— s mochanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.


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    2N118 X10-4 7S222 I15-0 ScansUX7 PDF

    TRANSISTOR b 772 p

    Abstract: bfw 16 transistor BFW 72 TRANSISTOR BFW 16
    Text: E5C D • fi235bQS 0004725 1 H S I E 6 NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF BFW 16 A is an epitaxial NPN silicon planar RF transistor In TO 39 metal case 5 C 3 DIN 41873 intended for general applications up to the GHz range, e.g. for


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    fi235bQS Q62702-F319 C--12 23SbQS Q0QM727 BFW16A TRANSISTOR b 772 p bfw 16 transistor BFW 72 TRANSISTOR BFW 16 PDF

    2N117

    Abstract: 2n117 texas
    Text: TYPE 2N117 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N N O . O L -S 5 8 8 9 6 , M A R C H 19S8 9 to 20 beta spread Specifically designed for high gain at high temperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.


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    2N117 2n117 texas PDF

    BCY65

    Abstract: BCY65-VIII BCY65-IX BCY65-VII BCY65IX
    Text: BCY65 T " 3 5 '- / I PHILIPS INTERNATIONAL SbE D 7110ÖSb DDM21D2 T Sü « P H I N SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in TO-18 metal envelope with the collector connected to the case and designed for use in amplifier and switching applications.


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    BCY65 T-35-- 7110flSb DDM21D2 BCY65-VII 195S2; BCY65 BCY65-VIII BCY65-IX BCY65-VII BCY65IX PDF

    2N120

    Abstract: ScansUX7
    Text: TYPE 2N120 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N N O . D L-S 5 8900, M A R C H 1958 76 to 333 beta spread Specifically designed for high gain at high temperatures mechanical d a ta Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.


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    2N120 ScansUX7 PDF

    2N336

    Abstract: No abstract text available
    Text: TYPE 2N336 N-P-N GROWN JUNCTION SILICON TRANSISTOR B U L L E T I N N O . D L - S 5 9 1 0 3 9 , M A R C H 1959 Beta From 76 to 333 Specifically designed for high gain at high temperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. L nit weight is approximately


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    2N336 PDF

    bfw 106 c

    Abstract: BFW16 Q62702-F319 transistor BFW 10 bfw16a
    Text: E5C D fi235bQ5 Q0047ES 1 H S I E G • NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF ^^-'31-2.3 BFW 16 A is an epitaxial NPN silicon planar RF transistor in TO 39 metal case 5 C 3 DIN 41 87 3 intended for general applications up to the GHz range, e.g. for


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    fi235bQ5 Q0047ES Q62702-F319 23SbOS 00Q4727 BFW16 bfw 106 c Q62702-F319 transistor BFW 10 bfw16a PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 7 ^5 3 7 005fii4fl5 T tm r" P 3 3 - 1 5 BDY57 BDY58 SGS-THOMSON iLiCTËMOtSS HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTORS S Q S-THOMSO DESCRIPTION The BDY57 and BDY58 are silicon multiepitaxial planar NPN transistors in Jedec TO-3 metal case, intended for use in switching and linear applications


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    005fii4fl5 BDY57 BDY58 BDY57 BDY58 PDF

    Transistor 5331

    Abstract: BSV16 BSV17 BSV17-10 bsv16-16 BSV16-10 BSV15 BSV15-10 Silicon Epitaxial Planar Transistor philips
    Text: I I N AMER PHIL I P S / D I S C R E T E t.'ÎE J> 002707b 341 I IAPX BSV15 to 17 ^ 5 3 ^ 3 1 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes with the collector connected to the case. These transistors are intended for general industrial applications.


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    BSV15 BSV15â BSV16â BSV17â BSV15; BSV16; Transistor 5331 BSV16 BSV17 BSV17-10 bsv16-16 BSV16-10 BSV15-10 Silicon Epitaxial Planar Transistor philips PDF

    BSX46

    Abstract: BSX45 Transistor BSX45-10 Transistor BSX45 BSX47 BSX47-10 IEC134 Z8239 silicon planar epitaxial transistors
    Text: B S X 4 5 to 47 _ P H IL IP S INTERNATIO N AL 5bE D 711002b T - * 7 - 2 3 _ OGMEHOb 3 4 e! « P H I N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes with the collector connected to the case. These transistors are intended for general industrial applications.


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    BSX45to 711DflSb BSX45 BSX46 BSX47 BSX45â BSX45- BSX46â BSX46- BSX47â Transistor BSX45-10 Transistor BSX45 BSX47 BSX47-10 IEC134 Z8239 silicon planar epitaxial transistors PDF

    2N333

    Abstract: ScansUX7
    Text: TYPE 2N333 N-P-N G R O W N -JU N C TIO N SILICON TRANSISTOR B U L L E T I N N O . D L -S 5 9 1 0 3 6 , M A R C H 1960 Bata From 18 to 40 Specifically designed for high gain at high temperatures •Mchanleal data Welded case with glass-to-metal hermetic seal between case and leads. Unit weight is approximately


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    2N333 ScansUX7 PDF

    BSX45A

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL B S X 4 5 to 47 _ T - z y - z z _ 711DÖSb DGMEHÜb 3MT « P H I N SbE D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in T O -39 metal envelopes w ith the collector connected to the case. These transistors are intended for general industrial applications.


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    BSX45 BSX46 BSX47 BSX46â BSX45 7110fl2b 7Z82399 Fig-13 BSX45A PDF

    bsx46

    Abstract: bsx45
    Text: 3GE D • 7 ^5 ^ 3 7 ooaiobs 3 ■ /IT SGS-THOMSON ^ 7# . S G BSX45 BSX46 S-THOMSON MEDIUM POWER AMPLIFIERS DESCRIPTION The BSX45 and BSX46 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, inten­ ded for use in medium power general industrial ap­


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    BSX45 BSX46 BSX46 BSX45-BSX46 BSX45-BSX46 QQ31Qbö T-33-05 PDF

    2N4391

    Abstract: 2n4393 2N4392 2N 4391 NS2N
    Text: 7 1 1 0 0 5 b O D h ö D ? 1* 50b • P H I N 2N4391 to 4393 y v N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO -18 metal envelopes w ith the gate connected to the case. The transistors are intended for low power, chopper or switching,


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    711005b 2N4391 0Gbfl077 2N4392 2N4393 2N 4391 NS2N PDF

    bux41n

    Abstract: No abstract text available
    Text: rZ ^ 7 J S G S -T H O M S O N 5 L iO T Q K S # BUX41N HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESCRIPTIO N The BUX41N is a silicon multiepitaxial planar NPN transistor in Jedec TO-3 metal case, intented for use in switching and linear applications in military


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    BUX41N BUX41N PDF

    BDY92

    Abstract: No abstract text available
    Text: r Z Z SGS-THOMSON ^ 7# 5 BDY90/1/2 HIGH CURRENT, HIGH SPEED TRANSISTORS D E S C R IP T IO N The BDY90, BDY91, BDY92 are silicon multiepitaxial planar NPN transistors in Jedec TO-3 metal case intended for use in switching and linear appli­ cations in military and industrial equipment.


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    BDY90/1/2 BDY90, BDY91, BDY92 PDF