2N3421
Abstract: 2N3419 2N3420 1000C 2N3418 2N3418S 2N3419S 2N3420S
Text: TECHNICAL DATA 2N3418, S, JAN, TX, TXV 2N3419, S, JAN, TX, TXV 2N3420, S, JAN, TX, TXV 2N3421, S, JAN, TX, TXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/393 NPN SILICON MEDIUM-POWER TRANSISTOR 2N3418, 2N3419, 2N3420, 2N3421 TO- 5 MAXIMUM RATINGS Ratings
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2N3418,
2N3419,
2N3420,
2N3421,
MIL-PRF-19500/393
2N3421
1000C
2N3421
2N3419
2N3420
2N3418
2N3418S
2N3419S
2N3420S
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2N3868
Abstract: 2N3867S 2N3867 2N3868S JTX 2N3867 2N3868S JAN
Text: TECHNICAL DATA 2N3867 JAN, JTX, JTXV 2N3867S JAN, JTX, JTXV 2N3868 JAN, JTX, JTXV 2N3868S JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/350 PNP SILICON SWITCHING TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage
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2N3867
2N3867S
2N3868
2N3868S
MIL-PRF-19500/350
2N3867
2N3867S
2N3868
2N3868S
2N3867,
JTX 2N3867
2N3868S JAN
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2N6660 JANTX
Abstract: No abstract text available
Text: 2N6660JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS
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2N6660JAN/JANTX/JANTXV
2N6659/2N6660,
VQ1004J/P
VNDQ06
P-37515--Rev.
04-Jul-94
2N6660 JANTX
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IRF150CF
Abstract: GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTF152 YTFP150 2SK747
Text: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Max (V) Clsa Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 BUZ349 BUZ349 SFN152 YTFP152
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BUZ349
SFN152
YTFP152
YTF152
IRFP152
RFH35Nl0
RFK35Nl0
PB125N60HM
PB125N60HP
IRF150CF
GENTRON
2SK747A
EUM159M
2SK798
EFM159M179
YTFP150
2SK747
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2N5781
Abstract: No abstract text available
Text: 2N5781 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)
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2N5781
O205AD)
1-Aug-02
2N5781
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BSX46
Abstract: No abstract text available
Text: BSX46 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)
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BSX46
O205AD)
1-Aug-02
BSX46
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2N5333
Abstract: No abstract text available
Text: 2N5333 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)
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2N5333
O205AD)
1-Aug-02
2N5333
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CV7727
Abstract: No abstract text available
Text: CV7727 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)
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CV7727
O205AD)
1-Aug-02
CV7727
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2N6303
Abstract: No abstract text available
Text: 2N6303 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016)
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2N6303
O205AD)
1-Aug-02
2N6303
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2N4272A
Abstract: No abstract text available
Text: 2N4272A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 140V 0.41 (0.016)
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2N4272A
O205AD)
1-Aug-02
2N4272A
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2N1132A
Abstract: 2N3495 2N5415 2n1132a transistor 2N3494 2N2800 2N4033 2N2904 2N2905 2N3467
Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PN P TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637 2N3743
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O-5/TO205AD/TO-39
T0205AD
2N1132A
2N2800
2N2904
2N2904AA
2N2905
2N2905AA
2N5415
2N5416
2N3495
2n1132a transistor
2N3494
2N4033
2N3467
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2N4033
Abstract: 2N3494 2N5415
Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V cE O Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637
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OCR Scan
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O-5/TO205AD/TO-39
T0205AD
2N1132A
2N2800
2N2904
2N2904AA
2N2905
2N2905AA
2N5415
2N5416
2N4033
2N3494
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2N 3495
Abstract: 2N5415
Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PINT TRANSISTOR TO-5/TO205AD/TO-39 PACKAG E D E V IC E T Y PE VcEO sus VOLTS Ic (m ax) AM PS TO -5 T O 205A D 2N 1132A 40 0.6 2N 2800 35 2N 2904 i T O -39 fn ^FE @ V V CE m in/m ax @ m A /V VcE(sat) @ I c/I b V @ m A /m A
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O-5/TO205AD/TO-39
2N 3495
2N5415
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2N4405
Abstract: 2N4890 2N4036 2N4929 2N4037 2N4404 2N4406 2N4407 2N4928 2N5022
Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 IC/ V c e min/max @ mA/V @ Ic/IB V @ mA/mA c <p P MHz 1.0 40/140@150/10 0.65@150/15 30 60 40 1.0 50/250@l 50/10 1.4@150/15 30 60 2N4404 80 1.0 40/120@ 150/5 0.2@150/15 10 200 2N4405
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T0-5/T02Ã
5AD/T0-39
T0205AD
2N4036
2N4037
2N4404
2N4405
2N4406
2N4407
2N4890
2N4929
2N4928
2N5022
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2N3019A
Abstract: 2N3501A
Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE TO-5 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N2270 2N3019A 2N3020 2N3053A 2N3114 2N3300 2N3498A 2N3499A 2N3500A 2N3501A 2N3724 2N3725
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O-5/TO205AD/TO-39
T0205AD
2N697
2N1711
2N1613A
2N1893
2N2218A
2N2218AA
2N2219A
2N2219AA
2N3019A
2N3501A
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2n4929
Abstract: 2N4405
Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V ceo sus VOLTS Ic (max) AMPS ^FE @ IC/ VcE min/max @ mA/V VcE(wt) @ I c/I b V @ mA/mA C(P P ij (MHz) 2N4036 65 1.0 40/140@l 50/10 0.65@150/15 30 60 2N4037 40 1.0 50/250@l 50/10 1.4@150/15
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O-5/TO205AD/TO-39
T0205AD
2N4036
2N4037
2N4404
2N4405
2N4406
2N4407
2N4890
2N4928
2n4929
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Untitled
Abstract: No abstract text available
Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 @ W VCE min/max @ mA/V @ L/I b V @ mA/mA C<^ P fT MHz 1.0 40/140@150/10 0.65@150/15 30 60 40 1.0 50/250@l 50/10 1.4@150/15 30 60 2N4404 80 1.0 40/120@ 150/5 0.2@150/15 10 200 2N4405
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O-5/TO205AD/TO-39
2N4404
2N4405
2N4406
2N4407
2N4890
2N4928
2N4929
2N4930
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Untitled
Abstract: No abstract text available
Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 T O -5 TO 205A D t ri T O -3 9 20 @ W ^C m in /m a x D E V IC E su s Ic (m a x ) TYPE VOLTS AM PS @ m A /V 2N 697 40h 0 .8 4 1 0 /1 2 0 @ 150/10 2N 1711 50h 1.0 2N 1613 50h 2N 1893
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OCR Scan
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O-5/TO205AD/TO-39
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VP0300M
Abstract: VP0300L VP0300B-2 VP0300B VP0300
Text: VP0300 SERIES P-Channel Enhancement-Mode MOS Transistors HHSüSSÜS PRODUCT SUMMARY PART NUMBER V BR DSS (V) VP0300B -3 0 VP0300L VP0300M BOTTOM VIEW TO-39 (TO-205AD) •d "W (A) PACKAGE 2.5 -1 .2 5 TO -39 -3 0 2.5 -0 .3 2 TO -92 -3 0 2.5 - 0 .5 TO -237 1 SOURCE
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VP0300
VP0300B
VP0300L
VP0300M
O-205AD)
O-226AA)
O-237
VP0300B2
VP0300L
VP0300B.
VP0300B-2
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2N6660
Abstract: s0437 2N6660 siliconix VQ1004J
Text: 2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V D-S Single and Quad MOSFETs PRODUCT SUMM ARY Part Number V (B R )D S S M i n ( V ) 2N6660 VQ1004J/P 60 r D S (o n) M a x ( Q ) V G S (th ) (V) I d (A) 3 @ V q s = 10 V 0.8 to 2 1.1 3.5 @ V qs = 10 V 0.8 to 2.5
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2N6660,
VQ1004J/P
2N6660
VQ1004J/P
S-04379--
16-Jul-01
s0437
2N6660 siliconix
VQ1004J
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VN0808M
Abstract: VNDQ09 VNDQ3CHP VN88A TO-205AD
Text: VNDQ09 N-Channel Enhancement-Mode MOSFETs iTSS?SS.xd DEVICE TYPE PACKAGE Single TO-39 TO-205AD Single TO-237 • VN0808M Single TO-220SD • VN88AFD Quad 14-Pin Plastic • VQ1006J Quad 14-Pin Dual-ln-Line • VQ1006P Single Chip • Available as VNDQ3CHP
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VNDQ09
O-205AD)
O-237
O-220SD
14-Pin
2N6661
VN0808M
VN88AFD
VQ1006J
VNDQ3CHP
VN88A
TO-205AD
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vn0300m
Abstract: No abstract text available
Text: SILICONIX INC 1ÔE D • GG3j MG7 4 b ■ VN0300 SERIES f X S ilicon ix X V 3254735 in c o r p o r a te d N-Channet Enhancement-Mode MOS Transistors T -S q -o S PRODUCT SUMMARY PART NUMBER TQ-205AD TO-39 V(BR)DSS fDS(ON) < ii) (V) Id (A) PACKAGE VN0300B
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OCR Scan
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VN0300
VN0300B
O-205AD
TQ-205AD
VN0300L
VN0300M
O-237
VNDQ03
O-237
VN0300B.
vn0300m
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Untitled
Abstract: No abstract text available
Text: -BTSSKte 2N6661 JANTX, JANTXV N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY _ TO-39 TO-205AD h O (V) (A) 90 4 0.86 V (B R )D S S BO TTO M VIEW •d 2 GATE 3 & C AS E-D R A IN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)
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2N6661
O-205AD)
MIL-S-19500/547A.
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2n3053A complementary
Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
Text: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697
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OCR Scan
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a00S72b
2N2102
2N4036
120MHz
2N697
2N1613
2N3053
2N2270
T0205AD/
2N3053A
2n3053A complementary
40362
BUX40A
40319
2n4314
2N1893
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