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    TO220 PACKAGE INFINEON Search Results

    TO220 PACKAGE INFINEON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    TO220 PACKAGE INFINEON Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN-TO220-3-31-01

    Abstract: to220 torque for SELF TAPPING SCREW application note AN-TO220-3-31-01 TO220 HEATSINK DATASHEET Siemens 6126 TO220 package infineon CH-8047 BD 100 V LIST pirelli P-2720-093
    Text: Version 1.0 , July 2000 Application Note AN-TO220-3-31-01 Mounting considerations for TO220-3-31 fully isolated package Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g Mounting considerations for TO220-3-31 fully


    Original     		AN-TO220-3-31-01 O220-3-31 O220-3-31 Room14J1 Room1101 AN-TO220-3-31-01 to220 torque for SELF TAPPING SCREW application note AN-TO220-3-31-01 TO220 HEATSINK DATASHEET Siemens 6126 TO220 package infineon CH-8047 BD 100 V LIST pirelli P-2720-093 PDF

    to220-7-180

    Abstract: H8243 IL12 P-TO220-7-230 Q67060-S6058 power transistor for inductive load in to220 package
    Text: P R O D U C T B R I E F The BTS 6144P is a single channel high-side power switch 9 mΩ in TO220-7-230 package. The BTS 6144B is the same high-side power switch in TO220-7-180 (SMD) package. They are fully protected by embedded protection functions including ReverSafe.


    Original     		6144P O220-7-230 6144B O220-7-180 B152-H8243-X-X-7600 to220-7-180 H8243 IL12 P-TO220-7-230 Q67060-S6058 power transistor for inductive load in to220 package PDF

    1614G

    Abstract: No abstract text available
    Text: SPP15P10P G SIPMOS Power-Transistor Product Summary Feature • P-Channel VDS -100 V • Enhancement mode RDS on 0.24 Ω • Avalanche rated ID -15 A • dv/dt rated PG-TO220-3 Drain pin 2 Type Package SPP15P10P PG-TO220-3 Gate pin1 Lead free Marking


    Original     		SPP15P10P PG-TO220-3 SPP15P10P 15P10P -200A/ 1614G PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP15P10P G SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS -100 V • Enhancement mode RDS on 0.24 Ω • Avalanche rated ID -15 A • dv/dt rated PG-TO220-3 Drain pin 2 Type Package SPP15P10P PG-TO220-3 Gate pin1 Marking Source


    Original     		SPP15P10P PG-TO220-3 SPP15P10P 15P10P -200A/ PDF

    smd diode 106a

    Abstract: Q67042-S4166 SPP15P10P
    Text: SPP15P10P Preliminary data SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS -100 V • Enhancement mode RDS on 0.24 Ω • Avalanche rated ID -15 A • dv/dt rated P-TO220-3-1 Drain pin 2 Type Package Ordering Code SPP15P10P P-TO220-3-1


    Original     		SPP15P10P P-TO220-3-1 Q67042-S4166 smd diode 106a Q67042-S4166 SPP15P10P PDF

    to220 pcb footprint

    Abstract: "thermal via" PCB D2PAK LFPAK footprint Renesas LFPAK footprint POWERPAK SO8 TO220 HEATSINK DATASHEET thermal PCB D2PAK sot669 lfpak LFPAK package
    Text: LFPAK The Toughest Power-SO8 The evolution of Power MOSFET packages Typical TO220 construction TO220 is the ‘original’ through-hole power package. It is suitable for through-hole mounting and low-cost wave soldering. It also provides very low thermal resistances when mounted to a suitable heatsink.


    Original     		soldering/sot669 to220 pcb footprint "thermal via" PCB D2PAK LFPAK footprint Renesas LFPAK footprint POWERPAK SO8 TO220 HEATSINK DATASHEET thermal PCB D2PAK sot669 lfpak LFPAK package PDF

    smd diode 106a

    Abstract: Q67042-S4166 SPP15P10P
    Text: SPP15P10P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS -100 V • Enhancement mode RDS on 0.24 Ω • Avalanche rated ID -15 A • dv/dt rated PG-TO220-3-1 Drain pin 2 Type Package Ordering Code SPP15P10P PG-TO220-3-1 Q67042-S4166


    Original     		SPP15P10P PG-TO220-3-1 Q67042-S4166 smd diode 106a Q67042-S4166 SPP15P10P PDF

    15P10P

    Abstract: SPP15P10P smd diode 106a
    Text: SPP15P10P G SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS -100 V • Enhancement mode RDS on 0.24 Ω • Avalanche rated ID -15 A • dv/dt rated PG-TO220-3-1 Drain pin 2 Type Package SPP15P10P PG-TO220-3-1 Gate pin1 Marking


    Original     		SPP15P10P PG-TO220-3-1 SPP15P10P 15P10P 15P10P smd diode 106a PDF

    smd diode 106a

    Abstract: No abstract text available
    Text: SPP15P10P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS -100 V • Enhancement mode RDS on 0.24 Ω • Avalanche rated ID -15 A • dv/dt rated P-TO220-3-1 Drain pin 2 Type Package Ordering Code SPP15P10P P-TO220-3-1 Q67042-S4166


    Original     		SPP15P10P P-TO220-3-1 SPP15P10P Q67042-S4166 -200A/ smd diode 106a PDF

    02N80C3

    Abstract: Q67040-S4432 SPA02N80C3 SPP02N80C3 02N8
    Text: SPP02N80C3 SPA02N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 2.7 Ω ID 2 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)


    Original     		SPP02N80C3 SPA02N80C3 P-TO220-3-31 P-TO220-3-1 P-TO-220-3-31: Q67040-S4432 02N80C3 02N80C3 Q67040-S4432 SPA02N80C3 SPP02N80C3 02N8 PDF

    smd marking 58a

    Abstract: 80N10L INFINEON PART MARKING to220 pcb footprint SPI80N10L SPP80N10L 80N10 SMD marking code 58A
    Text: SPI80N10L SPP80N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS Package Ordering Code Marking SPP80N10L PG-TO220-3-1 Q67042-S4173 80N10L


    Original     		SPI80N10L SPP80N10L PG-TO262-3-1 PG-TO220-3-1 Q67042-S4173 80N10L smd marking 58a 80N10L INFINEON PART MARKING to220 pcb footprint SPI80N10L SPP80N10L 80N10 SMD marking code 58A PDF

    2N06LH5

    Abstract: DIODE H5 SMD Q67060-S6055 S6054 smd diode H5 ANPS071E SPB80N06S2L-H5 SPP80N06S2L-H5 2N06
    Text: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 55 ID • 175°C operating temperature • dv/dt rated Package Ordering Code Marking SPP80N06S2L-H5 P- TO220 -3-1 Q67060-S6054


    Original     		SPP80N06S2L-H5 SPB80N06S2L-H5 Q67060-S6054 Q67060-S6055 2N06LH5 BSPP80N06S2L-H5 BSPB80N06S2L-H5, 2N06LH5 DIODE H5 SMD Q67060-S6055 S6054 smd diode H5 ANPS071E SPB80N06S2L-H5 SPP80N06S2L-H5 2N06 PDF

    47N10

    Abstract: SPB47N10 SPI47N10 SPP47N10 V550-12 Q67060-S7431
    Text: Preliminary data SPI47N10 SPP47N10,SPB47N10 SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS P-TO262-3-1 Package Ordering Code Marking SPP47N10 P-TO220-3-1


    Original     		SPI47N10 SPP47N10 SPB47N10 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP47N10 Q67040-S4183 47N10 47N10 SPB47N10 SPI47N10 V550-12 Q67060-S7431 PDF

    02N80C3

    Abstract: SPP02N80C3 Q67040-S4432
    Text: SPP02N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 2.7 Ω ID 2 A P-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated Type Package Ordering Code


    Original     		SPP02N80C3 P-TO220-3-1 Q67040-S4432 02N80C3 02N80C3 SPP02N80C3 Q67040-S4432 PDF

    15P10PL

    Abstract: No abstract text available
    Text: SPP15P10PL G SPD15P10PL G SIPMOS Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -100 V R DS on ,max 0.20 Ω ID -15 A • logic level • Avalanche rated PG-TO220-3 • Pb-free lead plating; RoHS compliant Type Package


    Original     		SPP15P10PL SPD15P10PL PG-TO220-3 PG-TO252-3 PG-TO220-3 15P10PL 15P10PL PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP15P10PL G SPD15P10PL G SIPMOS Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -100 V R DS on ,max 0.20 Ω ID -15 A • logic level • Avalanche rated PG-TO220-3 • Pb-free lead plating; RoHS compliant Type Package


    Original     		SPP15P10PL SPD15P10PL PG-TO220-3 15P10PL PG-TO252-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP18P06P SIPMOS Power-Transistor Product Summary Features V DS • P-Channel • Enhancement mode -60 V R DS on ,max 0.13 Ω ID -18.6 A • Avalanche rated • dv /dt rated P-TO220-3 • 175°C operating temperature Type Package Tape and reel information


    Original     		SPP18P06P P-TO220-3 SPP18P06P P-TO220-3 PDF

    DA300

    Abstract: No abstract text available
    Text: SPP15P10PL G SPD15P10PL G SIPMOS Power-Transistor Product Summary Features V DS -100 V • P-Channel R DS on ,max 0.20 : • Enhancement mode ID -15 A • logic level • Avalanche rated PG-TO220-3 • Pb-free lead plating; RoHS compliant Type Package Marking


    Original     		SPP15P10PL SPD15P10PL PG-TO220-3 PG-TO252-3 PG-TO220-3 15P10PL 15P10PL DA300 PDF

    2N06LH5

    Abstract: S6054 DIODE H5 SMD Q67060-S6055 smd diode H5 SPB80N06S2L-H5 ANPS071E SPP80N06S2L-H5
    Text: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS =Power-Transistor Product Summary Feature 55 VDS  N-Channel R DS on  Enhancement mode ID 175°C operating temperature Type SPP80N06S2L-H5 Package Ordering Code P- TO220 -3-1 Q67060-S6054 Marking SPB80N06S2L-H5 P- TO263 -3-2 Q67060-S6055


    Original     		SPP80N06S2L-H5 SPB80N06S2L-H5 Q67060-S6054 Q67060-S6055 2N06LH5 BSPP80N06S2L-H5 BSPB80N06S2L-H5, 2N06LH5 S6054 DIODE H5 SMD Q67060-S6055 smd diode H5 SPB80N06S2L-H5 ANPS071E SPP80N06S2L-H5 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP15P10P G SPD15P10P G SIPMOS Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -100 V R DS on ,max 0.24 Ω ID -15 A • Normal level • Avalanche rated PG-TO220-3 • Pb-free lead plating; RoHS compliant Type Package


    Original     		SPP15P10P SPD15P10P PG-TO220-3 15P10P PG-TO252-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP15P10P G SPD15P10P G SIPMOS Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -100 V R DS on ,max 0.24 Ω ID -15 A • Normal level • Avalanche rated PG-TO220-3 • Pb-free lead plating; RoHS compliant Type Package


    Original     		SPP15P10P SPD15P10P PG-TO220-3 PG-TO252-3 PG-TO220-3 15P10P 15P10P PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP15P10PL G SPD15P10PL G SIPMOS Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -100 V R DS on ,max 0.20 Ω ID -15 A • logic level • Avalanche rated PG-TO220-3 • Pb-free lead plating; RoHS compliant Type Package


    Original     		SPP15P10PL SPD15P10PL PG-TO220-3 PG-TO252-3 PG-TO220-3 15P10PL 15P10PL PDF

    2N06H5

    Abstract: ANPS071E SPB80N06S2-H5 SPP80N06S2-H5
    Text: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 5.5 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package


    Original     		SPP80N06S2-H5 SPB80N06S2-H5 Q67060-S6052 2N06H5 Q67060-S6053 BSPP80N06S2-H5 BSPB80N06S2-H5, 2N06H5 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5 PDF

    2n0612

    Abstract: smd diode 77a infineon 2n0612 BSPP77N06S2-12 SPP77N06S2-12 SPB77N06S2-12 BSPB77N06S2-12 80H100 55BA 2350pf
    Text: SPP77N06S2-12 SPB77N06S2-12 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 12 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package


    Original     		SPP77N06S2-12 SPB77N06S2-12 Q67060-S6029 2N0612 Q67060-S6030 BSPP77N06S2-12 BSPB77N06S2-12, 2n0612 smd diode 77a infineon 2n0612 SPP77N06S2-12 SPB77N06S2-12 BSPB77N06S2-12 80H100 55BA 2350pf PDF