Untitled
Abstract: No abstract text available
Text: 05308 P5V0S1ULC STANDARD CAPACITANCE TVS COMPONENT APPLICATIONS ✔ ✔ ✔ ✔ Ethernet - 10/100/1000 Base T Cellular Phones Personal Digital Assistant PDA USB Interfaces IEC COMPATIBILITY (EN61000-4) ✔ 61000-4-2 (ESD): Air - 15kV, Contact - 8kV ✔ 61000-4-4 (EFT): 40A - 5/50ns
|
Original
|
EN61000-4)
5/50ns
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 05302 P5V0S1UL STANDARD CAPACITANCE TVS COMPONENT APPLICATIONS ✔ ✔ ✔ ✔ Ethernet - 10/100/1000 Base T Cellular Phones Personal Digital Assistant PDA USB Interfaces IEC COMPATIBILITY (EN61000-4) ✔ 61000-4-2 (ESD): Air - 15kV, Contact - 8kV ✔ 61000-4-4 (EFT): 40A - 5/50ns
|
Original
|
EN61000-4)
5/50ns
8/20s)
|
PDF
|
P500-Gxxx
Abstract: fultec GR-1089 P500-G200-WH P850-G120-WH 85GA 50ga MOSFET SMD MARKING CODE 618 bourns potentiometer 321
Text: PL IA NT Features CO M • Formerly The P500-G & P850-G Series are currently available, but not recommended for new designs. Bourns TBU-PL Series is preferred. brand *R oH S ■ Extremely high speed performance ■ Blocks high voltages and currents ■ Two TBU® protectors in one small package
|
Original
|
P500-G
P850-G
P500-G
P850-G120-WH
MOV-10D361K
GSD2004S-V
MMBD2004S
P500-Gxxx
fultec
GR-1089
P500-G200-WH
P850-G120-WH
85GA
50ga
MOSFET SMD MARKING CODE 618
bourns potentiometer 321
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PL IA NT Features CO M • Formerly The P500-G & P850-G Series are currently available, but not recommended for new designs. Bourns TBU-PL Series is preferred. brand *R oH S ■ Extremely high speed performance ■ Blocks high voltages and currents ■ Two TBU® protectors in one small package
|
Original
|
P500-G
P850-G
P500-G
E315805.
GR-1089
P850-G
|
PDF
|
85GA
Abstract: P850-G120-WH P500-G120-WH GR-1089 P500-G200-WH MOV surge protection circuit diagram k20e VISHAY BC 047 P850-G200-WH
Text: PL IA NT Features CO M • Formerly The P500-G & P850-G Series are currently available, but not recommended for new designs. Bourns TBU-PL Series is preferred. brand *R oH S ■ Extremely high speed performance ■ Blocks high voltages and currents ■ Two TBU® protectors in one small package
|
Original
|
P500-G
P850-G
P500-G
P850-G120-WH
MOV-10D361K
GSD2004S-V
MMBD2004S
85GA
P850-G120-WH
P500-G120-WH
GR-1089
P500-G200-WH
MOV surge protection circuit diagram
k20e
VISHAY BC 047
P850-G200-WH
|
PDF
|
85GA
Abstract: p500g diode smd marking code 76
Text: PL IA NT Features CO M • Formerly The P500-G & P850-G Series are currently available, but not recommended for new SLIC designs. Bourns TBU-PL Series is preferred. brand *R oH S ■ Extremely high speed performance ■ Blocks high voltages and currents
|
Original
|
P500-G
P850-G
P500-G
E315805.
GR-1089
P850-G
85GA
p500g
diode smd marking code 76
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PL IA N T Features Bourns Model P500-G and P850-G Series TBU® HSPs are not recommended for POTS applications. This series is suited for applications requiring a dual bidirectional device where 50 ohms of series resistance is acceptable. For new SLIC applications, we recommend that
|
Original
|
P500-G
P850-G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PL IA N T Features Bourns Model P500-G and P850-G Series TBU® HSPs are not recommended for POTS applications. This series is suited for applications requiring a dual bidirectional device where 50 ohms of series resistance is acceptable. For new SLIC applications, we recommend that
|
Original
|
P500-G
P850-G
|
PDF
|
LTP190
Abstract: marking p50 LTP070 LTP070S LTP100 LTP100S LTP180 LTP180S LTP260 LTP300
Text: P50-59LT.NEW 1/15/99 12:05 PM Page 245 LTP Selection Guide and Product Data This section has two parts: • A Selection Guide that walks you through the process of selecting the correct LTP device for a circuit. • Product Data that outlines electrical characteristics,
|
Original
|
P50-59LT
LTP070
LTP070S
LTP100
LTP100S
LTP180
LTP180S
LTP190
LTP190R-U
LTP260
LTP190
marking p50
LTP070
LTP070S
LTP100
LTP100S
LTP180
LTP180S
LTP260
LTP300
|
PDF
|
TYCO MODULE
Abstract: diode MARKING CODE 18A QBW018A0B QBW018A0B-P58 TYCO module p
Text: Option Data Sheet October 14, 2004 Document: DS04-044 PDF name: qbw018a0b-P58_ds.pdf QBW018A0B-P58 Power Module; dc-dc Converters 36-75 Vdc Input; 12Vdc Output; 18A Description The QBW018A0B-P58 power module is a modified version of the QBW018A0B as defined in the standard
|
Original
|
DS04-044
qbw018a0b-P58
12Vdc
QBW018A0B
x3001
TYCO MODULE
diode MARKING CODE 18A
TYCO module p
|
PDF
|
marking P16
Abstract: 2x4 RJ45 LED RJ45 jack dimension P5 94v0 jack p10 RJ45 CONNECTOR jack RJ45 modular jack RJ45 panel jack TOP SIDE MARKING P5 80626
Text: INTEGRATED MODULAR JACK 10/100 Base TX RJ45 2xN Port Options: 2x1, 2x4, 2x6, 2x8 Port Meets or exceeds IEEE 802.3 standard for 10/100 Base-TX Available with or without LEDs 350 uH minimum OCL with 8mA DC bias current Minimum 1500Vrms isolation per IEEE802.3 requirement
|
Original
|
1500Vrms
IEEE802
M288027,
M287944,
file94219539
file11/274
file11/284
file11/304
marking P16
2x4 RJ45 LED
RJ45 jack dimension
P5 94v0
jack p10
RJ45 CONNECTOR jack
RJ45 modular jack
RJ45 panel jack
TOP SIDE MARKING P5
80626
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MC100E193 5V ECL Error Detection/ Correction Circuit The MC100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives the parity of the whole word. The word parity is also
|
Original
|
MC100E193
12-bit
MC100E193/D
|
PDF
|
3525 "application note"
Abstract: SECDED ic 4050 AN1404 AND8020 E160 MC100E193 MC100E193FN MC100E193FNR2 socket 775 pinout
Text: MC100E193 5VĄECL Error Detection/ Correction Circuit The MC100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives the parity of the whole word. The word parity is also
|
Original
|
MC100E193
MC100E193
12-bit
r14525
MC100E193/D
3525 "application note"
SECDED
ic 4050
AN1404
AND8020
E160
MC100E193FN
MC100E193FNR2
socket 775 pinout
|
PDF
|
LXES2TBCC4-028
Abstract: No abstract text available
Text: Silicon ESD protection device LXESxxB series Document No. LX–1-1122 Rev1.0 p1/35 1. Application This specification shall be applied to the ESD Protection Device. LXES03BAA1-110 LXES03BAA1-131 LXES1UBAB1-007 LXES1UBBB1-008 LXES1UBAA1-096 LXES1TBCC2-004 LXES1TBBB2-013
|
Original
|
p1/35
LXES03BAA1-110
LXES03BAA1-131
LXES1UBAB1-007
LXES1UBBB1-008
LXES1UBAA1-096
LXES1TBCC2-004
LXES1TBBB2-013
LXES2SBAA4-016
LXES2SBBB4-026
LXES2TBCC4-028
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: Silicon ESD protection device LXESxxB series Document No. LX–1-1122 Rev1.0 p1/35 1. Application This specification shall be applied to the ESD Protection Device. LXES03BAA1-110 LXES03BAA1-131 LXES1UBAB1-007 LXES1UBBB1-008 LXES1UBAA1-096 LXES1TBCC2-004 LXES1TBBB2-013
|
Original
|
p1/35
LXES03BAA1-110
LXES03BAA1-131
LXES1UBAB1-007
LXES1UBBB1-008
LXES1UBAA1-096
LXES1TBCC2-004
LXES1TBBB2-013
LXES2SBAA4-016
LXES2SBBB4-026
|
PDF
|
hall sensor 477
Abstract: 4 pin hall marking code 6 AH480 hall marking code 6 marking code fg AH477 marking code 8 lead msop package hall effect sensor 4 pin ic hall effect sensor 4 pin MSOP-8L
Text: AH477/480 Single Phase Hall Effect Latch Features General Description - On-chip Hall sensor - Bi-direction H type output drivers for single coil - Internal bandgap regulator allows temperature compensated operations and a wide operating voltage range
|
Original
|
AH477/480
AH477/480
AH480
858mm
209mm
hall sensor 477
4 pin hall marking code 6
hall marking code 6
marking code fg
AH477
marking code 8 lead msop package
hall effect sensor 4 pin ic
hall effect sensor 4 pin
MSOP-8L
|
PDF
|
"on semiconductor"
Abstract: E160 MC100E193 MC100E193FN MC100E193FNR2 MC10E193 MC10E193FN MC10E193FNR2 p4350
Text: MC10E193, MC100E193 5VĄECL Error Detection/ Correction Circuit The MC10E/100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives the parity of the whole word. The word parity is also
|
Original
|
MC10E193,
MC100E193
MC10E/100E193
12-bit
r14525
MC10E193/D
"on semiconductor"
E160
MC100E193
MC100E193FN
MC100E193FNR2
MC10E193
MC10E193FN
MC10E193FNR2
p4350
|
PDF
|
60PS-JMDSS-G-1-TF
Abstract: No abstract text available
Text: JMD CONNECTOR 0.5mm Emboss Tape Board-to-board connectors .020" pitch Features–––––––––––––––––––––––– • Smooth connection Thanks to the cantilever type contacts, mating is very smooth. • Distortion preventive construction
|
Original
|
5mm/20
0mm/30
0mm/50
Perpendicular/20
60PS-JMDSS-G-1-TF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RJ Filter Port Jacks with 10Base-T Filters ELECTRONICS INC. EPJ9372 • Designed for SitePlayer • Space saving RJ-45 Connectors • Available in different shielding configurations Electrical Parameters @ 25° C Cut-off Frequency MHz Insertion Loss (dB Max.)
|
Original
|
10Base-T
EPJ9372
RJ-45
EPJ9372
CSJ9372
|
PDF
|
LXES2TBCC4-028
Abstract: No abstract text available
Text: Silicon ESD protection device LXESxxB series Document No. LX–1-1122 Rev1.0 p1/30 1. Application This specification shall be applied to the ESD Protection Device. LXES1UBAB1-007 LXES1UBAA1-096 LXES1TBCC2-004 LXES1TBBB2-013 LXES2SBAA4-016 LXES2SBBB4-026 LXES2SBAA4-114
|
Original
|
p1/30
LXES1UBAB1-007
LXES1UBAA1-096
LXES1TBCC2-004
LXES1TBBB2-013
LXES2SBAA4-016
LXES2SBBB4-026
LXES2SBAA4-114
LXES2TBCC4-028
LXES4XBAA6-027
LXES2TBCC4-028
|
PDF
|
silicon npn planar rf transistor sot 143
Abstract: transistor AC 237 BFS 65 BFS62 F-05 Telefunken u 237 sot-23 TRANSISTOR MARKING 76 c10 g sot-23 sot-23 MARKING CODE GS 5 bc238c
Text: TELEFUNKEN ELECTRONIC m i [ F y » i K l electronic 81C » • S^SDDSb 0005314 M m A L G G 7 > S /~ /S " p e e RO B p5 bZ Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: General up to the VHF range Features: • Small feedback capacitance
|
OCR Scan
|
DDD53m
HAL66
BFS62
500WW
ft-11
569-GS
000s154
if-11
silicon npn planar rf transistor sot 143
transistor AC 237
BFS 65
BFS62
F-05
Telefunken u 237
sot-23 TRANSISTOR MARKING 76
c10 g sot-23
sot-23 MARKING CODE GS 5
bc238c
|
PDF
|
SI-30019
Abstract: No abstract text available
Text: LDWER ROW ELECTRICAL SPECIFICATIONS« 1.0 TURNS RATID P 1 -P 2 -P 3 i (J 1 -J 2 ) (P 4 - P 5 - P 6 ) i C J 3 -J 6 ) 2.0 INDUCTANCE (P 6 -P 4 ) (P 3 -P 1 ) 3.0 LEAKAGE INDUCTANCE P 6 -P 4 (W ITH J 6 AND J 3 SHORT) P 3-P 1 (W ITH J 2 AND J1 SHDRT) 4.0 INTERWINDING CAPACITANCE <P6,P5,P4) TD <J 6,J3 )
|
OCR Scan
|
1000PF,
350uH
CT720114
SI-30019
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LDVER RDW ELECTRICAL SPECIFICATIONS* l.D TURNS RATIO P 1-P E-P3 i (J1 -J2 ) CP 4-P 5 -P 6) ; (J3 -J6 > 2.0 INDUCTANCE <P6-P4> (P3-PL) 3.0 LEAKAGE INDUCTANCE P 6 -P 4 (WITH J6 AND J3 SHDRT) P3-P1 (WITH J2 AND JL SHDRT) 4.0 INTERW INDING CAPACITANCE CP6.P5.P4) TD (J6,J3)
|
OCR Scan
|
350uH
CT720112
|
PDF
|
35NAG
Abstract: td 6d01
Text: LDWER ROW <D <£> <£> £> ELECTRICAL SPECIFICATIONS: 1.Û TURNS RATIO (PL-P2-P3 i CJ1-J2) (P 4-P 5-P6 ) i CJ3-J6) 2.0 INDUCTANCE (P6-P4) (P3-P1) 3.0 LEAKAGE INDUCTANCE P6-P4 <V1TH J6 AND J3 SHDRT) P3-P1 (WITH JE ANI J1 SHDRT) 4.Û INTERWINDING CAPACITANCE (P6,P5,P4) TD (J6,J3>
|
OCR Scan
|
350uH
CT720114
ST-30083
35NAG
td 6d01
|
PDF
|
