Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TOSHIBA 1SS Search Results

    TOSHIBA 1SS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA 1SS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    tb31224cf

    Abstract: transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52
    Text: 2005-2 PRODUCT GUIDE Semiconductor Product Guide 2005 Toshiba Electronics Malaysia Sdn. Bhd. Toshiba Semiconductor Thailand Co., Ltd. Toshiba Semiconductor (Wuxi) Co., Ltd. semiconductor http://www.semicon.toshiba.co.jp/eng Committed to people, Committed to the Future


    Original     		SCE0007A tb31224cf transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52 PDF

    1ss421

    Abstract: TMP86FH12MG SSM3J108TU SSM3K101TU SSM3K102TU SSM3K104TU SSM3K105TU SSM3K106TU SSM3K107TU SSM3K116TU
    Text: TOSHIBA SEMICONDUCTOR BULLETIN EYE JANUARY 2006 VOLUME 162 CONTENTS INFORMATION Toshiba and NEC Electronics to Collaborate on 45-nanometer System LSI Process


    Original     		45-nanometer 2021-size 1ss421 TMP86FH12MG SSM3J108TU SSM3K101TU SSM3K102TU SSM3K104TU SSM3K105TU SSM3K106TU SSM3K107TU SSM3K116TU PDF

    1SS364

    Abstract: No abstract text available
    Text: 1SS364 TOSHIBA 1 SS364 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE VHF TUNER BAND SWITCH APPLICATIONS • • • Small Package. Small Total Capacitance : Cx = 1.2pF Max. Low Series Resistance : rs = 0.60 (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		1SS364 100MHz 1SS364 PDF

    1SS364

    Abstract: No abstract text available
    Text: 1SS364 TOSHIBA 1 SS364 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE VHF TUNER BAND SWITCH APPLICATIONS • • • Small Package. Small Total Capacitance : Cx = 1.2pF Max. Low Series Resistance : rs = 0.60 (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		1SS364 100MHz 1SS364 PDF

    1SS272

    Abstract: No abstract text available
    Text: TOSHIBA 1SS272 1 SS272 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. + 0.2 = 25°C CHARACTERISTIC Maximum Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms)


    OCR Scan     		1SS272 SC-61 961001EAA2' 1SS272 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS378 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER TYPE HIGH SPEED SWITCHING. • • Low Forward Voltage : Vp = 0.23V Typ. @Tp = 5mA Small Package : SC-70 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage SYMBOL


    OCR Scan     		1SS378 SC-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS397 TOSHIBA 1SS397 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package :Vjr= 1.0V Typ. : V r = 400V (Min.)


    OCR Scan     		1SS397 SC-70 961001EAA2' PDF

    1SS397

    Abstract: No abstract text available
    Text: 1SS397 TOSHIBA 1 SS397 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package Vjr = 1.0V Typ. VR —400V (Min.)


    OCR Scan     		1SS397 SC-70 300/u 961001EAA2' 1SS397 PDF

    1SS399

    Abstract: No abstract text available
    Text: TOSHIBA 1SS399 1 SS399 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package Vp = 1.0V Typ. VR = 400V (Min.)


    OCR Scan     		1SS399 SC-61 300pi 961001EAA2' 1SS399 PDF

    1SS362

    Abstract: No abstract text available
    Text: TOSHIBA 1SS362 1 SS362 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Small Package Low Forward Voltage : Vjn = 0.97V Typ. Fast Reverse RecoveryTime : trr= 1.6ns (Typ.) Small Total Capacitance


    OCR Scan     		1SS362 961001EAA2' 1SS362 PDF

    SS307

    Abstract: No abstract text available
    Text: TOSHIBA 1SS307 1 SS307 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE GENERAL PUROPOSE RECTIFIER APPLICATIONS. Low Forward Voltage Low Reverse Current Small Total Capacitance Small Package • : : : ; +0.5 2.5 - 0.3 Vjr l.UV lyp. lR = 0.1nA(Typ.) Crp = 3.UpF (Typ.)


    OCR Scan     		1SS307 SS307 SC-59 SS307 PDF

    x300n

    Abstract: 1SS387
    Text: TOSHIBA 1SS387 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS387 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION • • • • Small Package Low Forward Voltage : Vp 3 = 0.98V (Typ.) Fast Reverse RecoveryTime : trr= 1.6ns (Typ.) Small Total Capacitance


    OCR Scan     		1SS387 961001EAA2' x300n 1SS387 PDF

    TOSHIBA 1N DIODE

    Abstract: No abstract text available
    Text: TOSHIBA 1SS200 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS2Q0 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. Low Forward Voltage : Vp 3 = 0.92V (Typ.) Fast Reverse Recovery Time : trr = 1.6ns (Typ.) Small Total Capacitance : C^ =2 .2pF' (Typ.)


    OCR Scan     		1SS200 55MAX 961001EAA2' TOSHIBA 1N DIODE PDF

    1SS190

    Abstract: No abstract text available
    Text: TOSHIBA 1SS190 TOSHIBA DIODE 1 SILICON EPITAXIAL PLANAR TYPE S S 1 9 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time SYMBOL VF(1)


    OCR Scan     		1SS190 100mA 961001EAA2 961001EAA2' 1SS190 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS382 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS382 ULTRA HIGH SPEED SWITCHING APPLICATION • • • • Small Package Composed of 2 independentdiodes. Low Forward Voitage : Vy 3 = 0.9 2V (TYP.) Fast Reverse Recovery Time ; trr = 1.6ns (TYP,)


    OCR Scan     		1SS382 961001EAA2' PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS403 TOSHIBA TENTATIVE TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS403 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS Two-pin small packages are suitable for higher mounting densities. Excellent in Forward Current and Forward Voltage Characteristics : V f 2 = 0.90 V (Typ.)


    OCR Scan     		1SS403 PDF

    1SS360F

    Abstract: No abstract text available
    Text: 1SS360F TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS360F Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS 1.6 ± 0.1 0.85 ±0.1 Small Package : 1608 Fiat Lead Excellent in Forward Current and Forward Voltage Characteristics VF 3 —0.92 V (Typ.)


    OCR Scan     		1SS360F 1SS360F PDF

    1ss373

    Abstract: No abstract text available
    Text: 1SS373 TOSHIBA TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION • • 1 SS373 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm Small Package Low Forward Voltage : Vjn = 0.23V TYP. @Ijr = 5mA 0.8 ±0.1 MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING UNIT CHARACTERISTIC


    OCR Scan     		1SS373 1ss373 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS399 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE 1SS399 Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package + 0.2 : Vp = 1.0V Typ. : V r = 400V (Min.)


    OCR Scan     		1SS399 SC-61 961001EAA2' PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS314 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE VHF TUNER BAND SWITCH APPLICATIONS. Unit in mm • Small Package. • Small Total Capacitance : Ct = 1.2pF Max. • Low Series Resistance : rs = 0.5i2 (Typ.) MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING


    OCR Scan     		1SS314 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS381 1 SS381 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE VHF TUNER BAND SWITCH APPLICATIONS • • • Small Package Small Total Capacitance Low Series Resistance : Ct = 1.2 pF Max. : rs = 0.6 fl (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		1SS381 SS381 PDF

    1SS398

    Abstract: No abstract text available
    Text: TOSHIBA 1SS398 1 SS398 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package VF = 1.0V Typ. V r = 400V (Min.)


    OCR Scan     		1SS398 SC-59 300pi 961001EAA2' 1SS398 PDF

    1SS307

    Abstract: K3250
    Text: TOSHIBA 1SS307 1 SS307 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm GENERAL PUROPOSE RECTIFIER APPLICATIONS. • • • • Low Forward Voltage Low Reverse Current Small Total Capacitance Small Package +0.5 2.5-0.3 +0.25 1.5-0.15 VF = 1.0V Typ.


    OCR Scan     		1SS307 SC-59 O-236MOD 1SS307 K3250 PDF

    1SS368

    Abstract: No abstract text available
    Text: TOSHIBA 1SS368 1 SS368 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION Vp 3 = 0.98V (TYP.) trr= 1.6ns (TYP.) CT = 0.5pF (TYP.) 0.8 ±0.1 io 1 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Forward Voltage


    OCR Scan     		1SS368 961001EAA2' 1SS368 PDF