TOSHIBA K3700 Search Results

TOSHIBA K3700 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
DF2B5M4ASL		Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2)
74HC4053FT		Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
TCR5RG28A		Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F

TOSHIBA K3700 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
toshiba k3700 Abstract: 2SK3700 Text: 2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK3700 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 4.5 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 720 V)	Original	2SK3700 900HIBA toshiba k3700 2SK3700	PDF
toshiba k3700 Abstract: K3700 2SK3700 Text: 2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK3700 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 4.5 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 720 V)	Original	2SK3700 toshiba k3700 K3700 2SK3700	PDF
K3700 Abstract: toshiba k3700 2sk3700 Text: 2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK3700 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 4.5 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 720 V)	Original	2SK3700 K3700 toshiba k3700 2sk3700	PDF
toshiba k3700 Abstract: 2SK3700 K3700 2SK37 VDD400 k370 Text: 2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK3700 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 4.5 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 720 V)	Original	2SK3700 toshiba k3700 2SK3700 K3700 2SK37 VDD400 k370	PDF
Untitled Abstract: No abstract text available Text: 2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK3700 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 4.5 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 720 V)	Original	2SK3700	PDF
toshiba k3700 Abstract: 2SK3700 K3700 SC-65 Text: 2SK3700 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅣ 2SK3700 ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 2.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 4.5 S (標準)	Original	2SK3700 10VID SC-65 2-16C1B toshiba k3700 2SK3700 K3700 SC-65	PDF
Untitled Abstract: No abstract text available Text: 2SK3700 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅣ 2SK3700 ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 2.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 4.5 S (標準)	Original	2SK3700	PDF
triac tag 8518 Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference	OCR Scan		PDF