MP6622
Abstract: bipolar power transistor data toshiba transistors equivalent Power MOSFET toshiba Power MOSFET, toshiba toshiba environment policy MP66 toshiba mosfet home Inverter circuit Three-phase inverter
Text: TOSHIBA Semiconductor Company | Transistors >>>Products SEMICONDUCTOR BULLETIN EYE JANUARY 2005 Vol.150 Data Sheets Bipolar Small-Signal Transistors Small-Signal FETs New MOSFET Module MP66 Series 500V/5A 6-in-1 module Combination Products of Differnet Type Devices
|
Original
|
00V/5A
MP6622
150ns
jp/eng/prd/tr/eye/eye200501
MP6622
bipolar power transistor data toshiba
transistors equivalent
Power MOSFET toshiba
Power MOSFET, toshiba
toshiba environment policy
MP66
toshiba mosfet
home Inverter circuit
Three-phase inverter
|
PDF
|
SSM3K7002
Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
Text: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,
|
Original
|
3402C-0209
SSM3K7002
ESM 310
SSM3J16FU
SSM3K03TE
zener diode reference guide
SSM5N03FE
US6 KEC
SSM5G01TU
6798
SSM3J13T
|
PDF
|
TCM8240MD
Abstract: 8086 hex code TCM8240 DHT 11 an 80171 08123 B 8016 8058 FF124 48208
Text: TCM8240MD Ver 1.2 TOSHIBA C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TCM8240MD Ver 1.2 13/Nov/04 TENTATIVE 1.3 Mega pixel sensor chip TCM8240MD is an area color image sensor , at 1.3 Mega-pixels of array resolution 1300x 1040 , incorporating a camera signal processor . The optical format is 1/3.3 inch, of which small size is suitable for
|
Original
|
TCM8240MD
TCM8240MD
13/Nov/04
1300x
8086 hex code
TCM8240
DHT 11
an 80171
08123 B
8016
8058
FF124
48208
|
PDF
|
alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
|
Original
|
Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
|
PDF
|
Photovoltaic coupler
Abstract: Nanotech entertainment JDP2S05SC JDP2S08SC TC74VCX245FTG TC74VCX2541FTG TC74VCX541FTG TC74VCXR2245FTG VQON16 octal MOSFET ARRAY
Text: TOSHIBA SEMICONDUCTOR BULLETIN EYE March 2006 VOLUME 164 CONTENTS INFORMATION IBM, Sony, Toshiba Broaden and Extend Successful Semiconductor Technology Alliance .2 New Products Ultra-small PIN Diode Low rs Type .2
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JDS2S03S TOSHIBA Diode Silicon Epitaxial Planar Type JDS2S03S VHF Tuner Band Switch Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Small total capacitance: CT = 0.7 pF typ.
|
Original
|
JDS2S03S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JDS2S03S TOSHIBA Diode Silicon Epitaxial Planar Type JDS2S03S VHF Tuner Band Switch Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Small total capacitance: CT = 0.7 pF typ.
|
Original
|
JDS2S03S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JDS2S03S TOSHIBA Diode Silicon Epitaxial Planar Type JDS2S03S VHF Tuner Band Switch Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Small total capacitance: CT = 0.7 pF typ.
|
Original
|
JDS2S03S
|
PDF
|
JDS2S03S
Abstract: No abstract text available
Text: JDS2S03S TOSHIBA Diode Silicon Epitaxial Planar Type JDS2S03S VHF Tuner Band Switch Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. · Small total capacitance: CT = 0.7 pF typ.
|
Original
|
JDS2S03S
JDS2S03S
|
PDF
|
JDV2S71E
Abstract: No abstract text available
Text: JDV2S71E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S71E UHF SHF TUNING Unit: mm • High capacitance ratio: C1 V/C 25V = 11.5 typ. • Low series resistance: rs = 1.0 Ω (typ.) • Excellent C-V characteristics,and small tracking error. • Useful for small size tuner.
|
Original
|
JDV2S71E
JDV2S71E
|
PDF
|
JDS2S03S
Abstract: No abstract text available
Text: JDS2S03S TOSHIBA Diode Silicon Epitaxial Planar Type JDS2S03S VHF Tuner Band Switch Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Small total capacitance: CT = 0.7 pF typ.
|
Original
|
JDS2S03S
JDS2S03S
|
PDF
|
TOSHIBA DIODE
Abstract: 1SS314
Text: 1SS314 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS314 VHF Tuner Band Switch Applications • Small package. • Small total capacitance: CT = 1.2 pF max • Low series resistance: rs = 0.5 Ω (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics
|
Original
|
1SS314
TOSHIBA DIODE
1SS314
|
PDF
|
1SV271
Abstract: No abstract text available
Text: 1SV271 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV271 VHF~UHF Band RF Attenuator Applications • Useful for small size tuner • Small total capacitance: CT = 0.25 pF typ. • Low series resistance: rs = 3 Ω (typ.) Unit: mm Maximum Ratings (Ta = 25°C)
|
Original
|
1SV271
1SV271
|
PDF
|
1SV308
Abstract: No abstract text available
Text: 1SV308 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV308 VHF Tuner Band Switch Applications • Unit: mm Small package. · Low series resistance: rs = 1.1 Ω typ. · Small total capacitance: CT = 0.3 pF (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol
|
Original
|
1SV308
1SV308
|
PDF
|
|
|
1SV308
Abstract: No abstract text available
Text: 1SV308 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV308 VHF Tuner Band Switch Applications • Unit: mm Small package. • Low series resistance: rs = 1.1 Ω typ. • Small total capacitance: CT = 0.3 pF (typ.) Maximum Ratings (Ta = 25°C) Characteristics
|
Original
|
1SV308
1SV308
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1SS361 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361 Ultra High Speed Switching Application Unit in mm l Small package l Low forward voltage : VF = 0.9V typ. l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)
|
Original
|
1SS361
|
PDF
|
1SS381
Abstract: No abstract text available
Text: 1SS381 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS381 VHF Tuner Band Switch Applications • Small package · Small total capacitance: CT = 1.2 pF max · Low series resistance: rs = 0.6 Ω (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics
|
Original
|
1SS381
1SS381
|
PDF
|
1SS314
Abstract: No abstract text available
Text: 1SS314 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS314 VHF Tuner Band Switch Applications • Small package. · Small total capacitance: CT = 1.2 pF max · Low series resistance: rs = 0.5 Ω (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics
|
Original
|
1SS314
1SS314
|
PDF
|
1SV307
Abstract: No abstract text available
Text: 1SV307 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV307 VHF Tuner Band Switch Applications • Unit: mm Small package • Low series resistance: rs = 1.1 Ω typ. • Small total capacitance: CT = 0.3 pF (typ.) Maximum Ratings (Ta = 25°C) Characteristics
|
Original
|
1SV307
1SV307
|
PDF
|
1SS379
Abstract: No abstract text available
Text: 1SS379 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS379 General Purpose Rectifier Applications Low forward voltage : VF = 1.0V typ. Low reverse current : IR = 0.1nA (typ.) Small total capacitance : CT = 3.0pF (typ.) Small package : SC-59 Unit in mm Maximum Ratings (Ta = 25°C)
|
Original
|
1SS379
SC-59
1SS379
|
PDF
|
1SS307
Abstract: No abstract text available
Text: 1SS307 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 General Puropose Rectifier Applications Low forward voltage : VF = 1.0V typ. Low reverse current : IR = 0.1nA (typ.) Small total capacitance : CT = 3.0pF (typ.) Small package : SC−59 Unit: mm Maximum Ratings (Ta = 25°C)
|
Original
|
1SS307
SC-59
O-236MOD
1SS307
|
PDF
|
1SS311
Abstract: 13G1B
Text: 1SS311 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 High Voltage,High Speed Switching Applications Low forward voltage : VF = 0.94V typ. High voltage : VR = 400V (min) Unit: mm Fast reverse recovery time : trr = 1.5ns (typ.) Small total capacitance
|
Original
|
1SS311
SC-59
1SS311
13G1B
|
PDF
|
1SS295
Abstract: No abstract text available
Text: 1SS295 TO SH IBA TOSHIBA DIODE UHF BAND MIXER APPLICATIONS. • • • 1 SS295 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Small Package Small Delta Forward Voltage Small Delta Total Capacitance : AVjp = 10mV Max. : AOr = 0.1pF (Max.) MAXIMUM RATINGS (Ta = 25°C)
|
OCR Scan
|
1SS295
SC-59
1SS295
|
PDF
|
1SS271
Abstract: No abstract text available
Text: 1SS271 TO SH IBA TOSHIBA DIODE V H F -U H F MIXER APPLICATION • • • SILICON EPITAXIAL SCHO TTKY BARRIER TYPE 1 SS271 Small Package Small Delta Forward Voltage Small Delta Total Capacitance Unit in mm : AVjp = 10mV Max. : AOr = 0.1pF (Max.) MAXIMUM RATINGS (Ta = 25°C)
|
OCR Scan
|
1SS271
SC-59
1SS271
|
PDF
|
