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    TOSHIBA WEEK CODE MARKING Search Results

    TOSHIBA WEEK CODE MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA WEEK CODE MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Y1416

    Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to provide our customers with easy access to this information


    Original     		PDF AND8004/D 14xxx Y1416 vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363

    Untitled

    Abstract: No abstract text available
    Text: TB62734FMG TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic TB62734FMG Step-Up Type DC-DC Converter for White LED’s The TB62734FMG is a high-efficiency step-up type DC-DC converter the design of which has been optimized for driving white LED’s.


    Original     		PDF TB62734FMG TB62734FMG

    marking codes fairchild

    Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to


    Original     		PDF AND8004/D r14525 marking codes fairchild HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D

    marking codes fairchild

    Abstract: SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to


    Original     		PDF AND8004/D 14xxx r14525 AND8004/D marking codes fairchild SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L

    Untitled

    Abstract: No abstract text available
    Text: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Tc=70℃(max) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF GT8G136

    8g136

    Abstract: toshiba week code marking
    Text: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Tc=70℃(max) Maximum Ratings (Ta = 25°C)


    Original     		PDF GT8G136 dissipationt10 8g136 toshiba week code marking

    Untitled

    Abstract: No abstract text available
    Text: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) Unit: mm (@VGE=3.0V(min),Ta=70℃(max)/ Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF GT8G136

    GT8G136

    Abstract: 8g136
    Text: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) Unit: mm (@VGE=3.0V(min),Ta=70℃(max)/ Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF GT8G136 dissipationt10 GT8G136 8g136

    10g131

    Abstract: ic MARKING QG GT10G131 TOSHIBA IGBT DATA BOOK NOR GATE IC A3170
    Text: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Unit: mm Strobe Flash Applications • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode


    Original     		PDF GT10G131 10g131 ic MARKING QG GT10G131 TOSHIBA IGBT DATA BOOK NOR GATE IC A3170

    igbt transistor

    Abstract: 8g133
    Text: GT8G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G133 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) • Peak collector current: IC = 150 A (max)


    Original     		PDF GT8G133 dissipationt10 igbt transistor 8g133

    Untitled

    Abstract: No abstract text available
    Text: TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8102 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Small footprint due to a small and slim package z Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPCS8102

    8G133

    Abstract: GT8G133 TOSHIBA IGBT DATA BOOK NOR GATE IC toshiba lead free mark
    Text: GT8G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G133 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) • Peak collector current: IC = 150 A (max)


    Original     		PDF GT8G133 dissipationt10 8G133 GT8G133 TOSHIBA IGBT DATA BOOK NOR GATE IC toshiba lead free mark

    Untitled

    Abstract: No abstract text available
    Text: TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS II TPCS8102 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Small footprint due to a small and slim package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPCS8102

    GT10G131

    Abstract: 10G131
    Text: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode


    Original     		PDF GT10G131 GT10G131 10G131

    cha marking code

    Abstract: No abstract text available
    Text: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) High forward transfer admittance : |Yfs| = 7 S (typ.)


    Original     		PDF TPC8303 cha marking code

    C2012JB1E105K

    Abstract: C2012JB1E225K CUS02 CXLD120 CXML322509-150 NSCW215T TB62734FMG VLF3010 TB62734
    Text: TB62734FMG TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic TB62734FMG Step-Up Type DC-DC Converter for White LED’s The TB62734FMG is a high-efficiency step-up type DC-DC converter the design of which has been optimized for driving white LED’s.


    Original     		PDF TB62734FMG TB62734FMG C2012JB1E105K C2012JB1E225K CUS02 CXLD120 CXML322509-150 NSCW215T VLF3010 TB62734

    Untitled

    Abstract: No abstract text available
    Text: TPC8012-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV TPC8012-H Switching Regulator Application DC-DC Converter Application Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.35 S (typ.)


    Original     		PDF TPC8012-H

    8g133

    Abstract: GT8G133 IGBT GT8G133
    Text: GT8G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G133 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) • Peak collector current: IC = 150 A (max)


    Original     		PDF GT8G133 dissipationt10 8g133 GT8G133 IGBT GT8G133

    10G131

    Abstract: No abstract text available
    Text: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode


    Original     		PDF GT10G131 10G131

    TPC8003

    Abstract: No abstract text available
    Text: TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Small footprint due to small and thin package Low drain−source ON resistance


    Original     		PDF TPC8003 TPC8003

    8g134

    Abstract: GT8G134 toshiba lead free mark
    Text: GT8G134 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G134 Strobe Flash Applications • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) Unit: mm (@VGE=2.5V(min)/ Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF GT8G134 dissipationt10 8g134 GT8G134 toshiba lead free mark

    Untitled

    Abstract: No abstract text available
    Text: TPC8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI TPC8004 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Small footprint due to small and thin package z Low drain−source ON resistance


    Original     		PDF TPC8004

    TPCS8006

    Abstract: No abstract text available
    Text: TPCS8006 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV TPCS8006 High-Speed Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) •


    Original     		PDF TPCS8006 TPCS8006

    Untitled

    Abstract: No abstract text available
    Text: TPC8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI TPC8004 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Small footprint due to small and thin package Low drain−source ON resistance


    Original     		PDF TPC8004 32HIBA