SOW-20
Abstract: TP0604 TP0604N3 TP0604WG low vgs mosfet to-92
Text: TP0604 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) -40V 2.0Ω -2.0A -2.4V Order Number / Package TO-92 SOW-20* TP0604N3 TP0604WG * Same as SO-20 with 300 mil wide body.
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TP0604
SOW-20*
TP0604N3
TP0604WG
SO-20
SOW-20
TP0604
TP0604N3
TP0604WG
low vgs mosfet to-92
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SOW-20
Abstract: TP0604WG
Text: TP0604WG Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON Max -40V 2.0Ω Order Number / Package SOW-20* TP0604WG * Same as SO-20 with 300 mil wide body. Advanced DMOS Technology Features 4 independent channels
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TP0604WG
SOW-20*
SO-20
SOW-20
TP0604WG
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SOW-20
Abstract: TP0604 TP0604WG
Text: TP0604 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON Max -40V 2.0Ω Order Number / Package SOW-20* TP0604WG * Same as SO-20 with 300 mil wide body. Advanced DMOS Technology Features 4 independent channels
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TP0604
SOW-20*
TP0604WG
SO-20
SOW-20
TP0604
TP0604WG
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SOW-20
Abstract: TP0604 TP0604WG
Text: TP0604 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON Max -40V 2.0Ω Order Number / Package SOW-20* TP0604WG * Same as SO-20 with 300 mil wide body. Advanced DMOS Technology Features 4 independent channels
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TP0604
SOW-20*
TP0604WG
SO-20
SOW-20
TP0604
TP0604WG
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SOW-20
Abstract: TP0604WG
Text: TP0604WG Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON Max -40V 2.0Ω Order Number / Package SOW-20* TP0604WG * Same as SO-20 with 300 mil wide body. Features Advanced DMOS Technology ❏ 4 independent channels
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TP0604WG
SOW-20*
SO-20
SOW-20
TP0604WG
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Untitled
Abstract: No abstract text available
Text: TP0604WG Transistors P-Channel Enhancement Mode MOSFET Array Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)600m @Temp (øC)150# IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.5#
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TP0604WG
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TN0604N3
Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Text: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -
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2N6659
VN2210N2
TN0104N3
2N7007
TN5325N3
AN0332
AP0332
VN2110K1
BSS123
DN2535
TN0604N3
HV5808
VQ1000
VP2210
HV50530
HV5708
TP0606N3
VP0635N5
VQ1001 replacement
2N6659 supertex
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TP0604
Abstract: No abstract text available
Text: TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► ► General Description Low threshold -2.4V max. High input impedance Low input capacitance (95pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown
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TP0604
DSFP-TP0604
A091608
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mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is
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T0-92
options4206A
ZVN4206C
ZVN4206E
ZVN4306A
TN2106K1
VN2210N3
TN0606N3
TN0606N6
mosfet cross reference
pj 929 diode
pj 1229 diode
BSS250
VN0109N5
pj 66 diode
pj 929
BSS295 "direct replacement"
BSS295 "cross reference"
pj 69 diode
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DN2540N5
Abstract: HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3
Text: March 2010 SUPERTEX PRODUCTS TRANSITIONED TO RoHS COMPLIANT PACKAGING Leaded / Non-Green Part Number Obsolete Lead-Free / Green Part Number (Replacement) 2N7000 2N7002 2N7008 CL2K4 CL2N3 CL2N8 DN2470K4 DN2530N3 DN2530N8 DN2535N3 DN2535N5 DN2540N3 DN2540N5
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2N7000
2N7002
2N7008
DN2470K4
DN2530N3
DN2530N8
DN2535N3
DN2535N5
DN2540N3
DN2540N5
DN2540N5
HT0440LG
TN2130K1-G
hv5308pj-b
TN2510N8
HT0440LG-G
LR8N3-G
LR645LG-G
DN2530N3-G
LR8N3
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tp0604
Abstract: No abstract text available
Text: TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This
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TP0604
MS-013,
DSFP-TP0604
A112107
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SITP
Abstract: TP0604 TP0604N3 SOW MARKING
Text: TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Low threshold -2.4V max. High input impedance Low input capacitance (95pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown
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TP0604
DSFP-TP0604
A022309
SITP
TP0604
TP0604N3
SOW MARKING
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SOW-20
Abstract: No abstract text available
Text: TP0604WG LJì Supertex inc. S u rfa ce M o un t L ow T h r e s h o ld P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information_ B V */ R ds <o n M a x Order Number / Package 2 .0 Q TP0604W G SOW-20* V DGS -4 0V * Same as SO-20 with 300 mil wide body.
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TP0604WG
SOW-20*
SO-20
TP0604W
SOW-20
SOW-20
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Untitled
Abstract: No abstract text available
Text: TP0604 Supertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BV dss / R ds on Max Order Num ber / Package SOW -20* b v dgs -40V 2.0Î2 TP0604W G * Same as S0-20 with 300 mil wide body. Features Advanced DMOS Technology
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TP0604
TP0604W
S0-20
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VP1304N2
Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Text: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND
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2N7002
BSS123
DN2535N2
DN2535N3
DN2535N5
DN2535ND
DN2540N2
DN2540N3
DN2540N5
DN2540N8
VP1304N2
TP2540ND
VN1304N3
VP3203N3
LND150N8
VN3205N5
VN1310N3
TN2510N8
TN0102N2
VP1306N2
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Untitled
Abstract: No abstract text available
Text: TC0604 Supertex inc. Low Threshold Complementary Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information_ BV DSS/ R d s o n M a x b v dgs Q 1 + Q 2 or Q 3 + Order Number / Package SOW -20* 3.0Q 40V TC0604WG * Same as S 0-20 with 300 mil wide body.
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TC0604
TC0604WG
TN0604W
TP0604W
SOW-20
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TP0602N3
Abstract: TR0602 TP0604N2
Text: ^Supertex inc. TP0602 T P 06 04 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package B V oss / R d S ON B V dgs (m ax) (min) (max) TO-39 TO-92 SOW-20* DICE* -20V 2.0£2 -2.0A -2.4V TP0602N2 TP0602N3 —
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TP0602
TP0602N2
TP0604N2
TP0602N3
TP0604N3
SOW-20*
TP0604W
TP0602ND
TP0604ND
TR0602/TP0604
TR0602
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Untitled
Abstract: No abstract text available
Text: TC0604WG Low Threshold Complementary Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information b v dss/ R d s o n Order Num ber / Package M ax BV dgs Qi + Q 2 or Q 3 + Q 4 SOW -20* 40V 3.0Q TC0604W G * Sam e as S 0 -2 0 w ith 300 mil w ide body.
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TC0604WG
TC0604W
TN0604W
TP0604W
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TP0602N3
Abstract: TP0602N2 TP0604N3 TP0604 TP0604N2 TP0604ND
Text: T P 06L Supertex inc. Lo w T h r e s h o ld P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVDSS/ BVogs t r d s <o n i ^D ON Order Number / Package ^G S(th) (max) (min) (max) TO-39 TO-92 SOW-20* DICEt -20V 2 .o a
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TP0602N2
TP0604N2
TP0602N3
TP0604N3
SOW-20*
TP0602ND
TP0604ND
TP0604WG
TP06L
TP0604N3
TP0604
TP0604N2
TP0604ND
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TC0604W
Abstract: fet free SOW-20 FAST DMOS FET Switches p-CHANNEL
Text: ^ Supertex inc. TC0604W G Low Threshold Complementary Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information_ b v dss / b v dgs ^ D S ON MaX Q, + Q2 or Q3 + Q4 40V 3.00 Order Number / Package SOW-20* TC0604WG * Same as S0-20 with 300 mil wide body.
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TC0604W
SOW-20*
TC0604WG
S0-20
TN0604WG
TP0604WG
SOW-20
fet free
FAST DMOS FET Switches p-CHANNEL
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pj 89 diode
Abstract: LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89
Text: Supertexinc. Short Form Catalog '96 High Voltage Integrated Circuits and DMOS Transistors Supertex inc. Leadership in CMOS/D MOS Technologies Supertex, Inc. designs, develops, manufactures, and markets quality semiconductor products for use in data processing, tele
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O-220
O-243
OT-89)
OT-23
20-Terminal
pj 89 diode
LR645 equivalent
FED-STD-209
pj 54 diode
TN0110 equivalent
pj 57 diode
CCW SOT23
HV5808
220v ac to 12V 20A SMPS
high-frequency control sot-89
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LS 7112
Abstract: No abstract text available
Text: TP0602 TP0604 S u p ertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BV0SS/ R d S ON b v dgs (max) (min) (max) TO-39 TO-92 SOW-20* Die+ -20V 2.0£i -2.0A -2.4V TP0602N2 TP0602N3 — TP0602ND
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TP0602
TP0604
TP0602N2
TP0602N3
TP0604N3
SOW-20*
TP0604WG
TP0602ND
TP0604ND
TP0602/TP0604
LS 7112
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pj 89 diode
Abstract: HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode
Text: M Supertex m e. Selector Guides MOSFETs S upertex enhancem ent- and depletion-m ode MOSFETs, utilizing vertical and lateral double-diffused processes, are suitable for a w ide variety of applications. They feature low capacitance for ease of drive and low gate-source threshold voltages fo r direct
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OT-23
TN2101K1
TN2106K1
TN2124K1
TP2106K1
VN2110K1
VP2110K1
-10ack
HV9111
HV9112
pj 89 diode
HV7708PG
HV7808
pj 44 diode
HV5808
VQ10003
VN 300
tp2106
220v ac to 9v dc converter
pj 56 diode
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tp06L
Abstract: tp0602n2 TP0604N3
Text: ^ S u p ertex me. TP06L Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package b v dss/ ^DS ON b v dqs (max) (min) (max) TO-39 TO-92 SOW-20* DICE+ -20V 2.0£i -2.0A -2.4V TP0602N2
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TP06L
TP0602N2
TP0602N
TP0604N3
SOW-20*
TP0602ND
TP0604ND
TP0604W
tp06L
TP0604N3
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