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    TPCS8214 Search Results

    TPCS8214 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TPCS8214 Toshiba Dual Silicon N-Channel MOS FET Original PDF

    TPCS8214 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    S8214

    Abstract: TPCS8214
    Text: TPCS8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPCS8214 Lithium Ion Battery Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 10.5mΩ (typ.) • High forward transfer admittance: |Yfs| = 10S (typ.)


    Original     		TPCS8214 S8214 TPCS8214 PDF

    S8214

    Abstract: TPCS8214
    Text: TPCS8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPCS8214 Lithium Ion Battery Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 10.5mΩ (typ.) • High forward transfer admittance: |Yfs| = 10S (typ.)


    Original     		TPCS8214 S8214 TPCS8214 PDF

    s8214

    Abstract: TPCS8214
    Text: TPCS8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPCS8214 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 10.5mΩ (typ.) • High forward transfer admittance: |Yfs| = 10S (typ.)


    Original     		TPCS8214 s8214 TPCS8214 PDF

    S8214

    Abstract: TPCS8214
    Text: TPCS8214 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅣ TPCS8214 ○ リチウムイオン 2 次電池用 • 単位: mm 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 10.5 mΩ (標準)


    Original     		TPCS8214 S8214 TPCS8214 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPCS8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPCS8214 Lithium Ion Battery Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 10.5mΩ (typ.) • High forward transfer admittance: |Yfs| = 10S (typ.)


    Original     		TPCS8214 PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078 PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 PDF

    tpc8118

    Abstract: SVI 2004 A toshiba f5d tpc8026 tpc8109 oks2c toshiba f5b TPC8028 MARKING TPC8107 SOP8 MOSFET MARKING STP
    Text: Power MOSFETs 低耐圧低Ronシリーズ 2007年 2月 Copyright 2007, Toshiba Corporation. 低Ron 低耐圧U-MOSの技術トレンド 30 2 Ron*A (mOhm*mm ) 25 20 15 10 Pch Nch 5 Pch IV Nch III Pch V Nch IV Pch VI Nch V or VI 2007年 2月 2 リチウムイオン電池保護回路用MOSFETトレンドマップ


    Original     		TPCM8001-H TPCM8003-H TPCM8002-H 2Q/2007 TPCM8102 1Q/2007 tpc8118 SVI 2004 A toshiba f5d tpc8026 tpc8109 oks2c toshiba f5b TPC8028 MARKING TPC8107 SOP8 MOSFET MARKING STP PDF

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718 PDF

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    2SK3566 equivalent

    Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
    Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent PDF

    tpc8118 equivalent replacement

    Abstract: SSM3J307T Zener diode smd 071 A01
    Text: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		BCE0082A tpc8118 equivalent replacement SSM3J307T Zener diode smd 071 A01 PDF

    SVI 2004 A

    Abstract: SVI 2004 TPC8028 tpc8026 toshiba f5d tpc8117 IC SEM 2004 tpc8118 toshiba smd marking SVI 2004 C
    Text: Medium Power MOSFETs Low Voltage＆ LowResistance series February, 2007 Copyright 2007, Toshiba Corporation. Low Resistance Trend 30 2 Ron*A (mOhm*mm ) 25 20 15 10 Pch Nch 5 Pch IV Nch III Pch V Nch IV Pch VI Nch V or VI February, 2007 2 Trend Map on Power MOSFET for LiB PCM


    Original     		PDF

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 PDF

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram PDF

    2sK2750 equivalent

    Abstract: 4614 mosfet 2SK3567 equivalent 2SK3799 equivalent TPC8107 application circuit 2SK3561 equivalent toshiba f5d 2SK2545 equivalent 2SK3566 equivalent 2sk3625
    Text: SELECTION GUIDE Power MOSFET www.toshiba-components.com X3 POWERMOSFET07 PowerMosfet-Brosch.indd 1 03.05.2007 13:53:26 Uhr 2 V S-6 Part Number (TSOP6) Maximum Ratings Circuit VDSS(V) ID(A) Configuration 10V RDS (ON) max (m ⍀) 4.5V 2.5V 2.0V 1.8V Qg typ. Ciss typ.


    Original     		POWERMOSFET07) TPC6004 TPC6003 TPC6005 TPC6006-H TPC6105 D-40549 2sK2750 equivalent 4614 mosfet 2SK3567 equivalent 2SK3799 equivalent TPC8107 application circuit 2SK3561 equivalent toshiba f5d 2SK2545 equivalent 2SK3566 equivalent 2sk3625 PDF

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322 PDF

    2sk3625

    Abstract: 2SK3566 equivalent 2SK3868 2SK3878 2sj618 NTPCA8008-H 2sk 2sj complementary mosfet TPC8107 2SK2611 MOSFET TOSHIBA 2SK2917
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2sk3625 2SK3566 equivalent 2SK3868 2SK3878 2sj618 NTPCA8008-H 2sk 2sj complementary mosfet TPC8107 2SK2611 MOSFET TOSHIBA 2SK2917 PDF