MMBT2907ALT1G
Abstract: data sheet transisters transisters datasheets 1N916 MMBT2907ALT1 MMBT2907ALT3 MMBT2907ALT3G
Text: MMBT2907ALT1 General Purpose Transisters PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2907A Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage
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MMBT2907ALT1
MMBT2907ALT1/D
MMBT2907ALT1G
data sheet transisters
transisters datasheets
1N916
MMBT2907ALT1
MMBT2907ALT3
MMBT2907ALT3G
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MMBT2907ALT1G
Abstract: transisters datasheets 1N916 MMBT2907ALT1 MMBT2907ALT3 MMBT2907ALT3G
Text: MMBT2907ALT1 General Purpose Transisters PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage
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MMBT2907ALT1
MMBT2907ALT1/D
MMBT2907ALT1G
transisters datasheets
1N916
MMBT2907ALT1
MMBT2907ALT3
MMBT2907ALT3G
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transisters
Abstract: 2SA1036K 2SA1577 2SC2411K 2SC4097 Power transisters ScansUX38
Text: 2SA1036K/2SA1577 h- "7 > v 7s $ /Transistors I fci £ * v \ s - i - M PNP y ' j 3 > Epitaxial Planar PNP Silicon Transisters 4 * ^ / Medi um Power Amp. 2 S A 1036K 2 S A 1577 • i iHI2\i‘;&|I3/'Dimensions Unit : mm) 2SA1577 2S A1036K lc Max.= —500mA
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2SA1036K/2SA1577
2SA1036K
2SA1577
500mA
2SC2411K/2SC4097
2SC2411K/
2SC4097.
transisters
2SC2411K
2SC4097
Power transisters
ScansUX38
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2SA1930 2sc5171
Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228
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SC-63/64)
SC-62)
SC-59
OT-23
2SA1483
2SC3803
2SA1426
2SA1204
2SA1734
2SA2065
2SA1930 2sc5171
tpc8107 equivalent
TPC8107 application circuit
2SC4157 equivalent
2sa1930 transistor equivalent
2SA949 equivalent
2sd880 equivalent
equivalent 2SC5200
2SK2865 Equivalent
marking 4d npn
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1036K
Abstract: No abstract text available
Text: 2SA1036K/2SA1577 h ~7 > v ^ $ / T ransistors X 2SA 10 3 6 K 2SA 1577 t ° ^ d r V T ^ y i ^ - ^ P N P ' > ' ; = ! > h - 7 > V * * Epitaxial Planar PNP Silicon Transisters • i^ ^ Jti'liffl/M ed iu m Power Amp. W fi \H ±[l./Dim ensions Unit: mm • « *
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2SA1036K/2SA1577
1036K
--500mA
2SC2411K
1036K
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AN5296 Application of the CA3018 Integrated
Abstract: TA618 ca3083 relay ts4 harris transistors transistor 102 CA3183 transistor 9-t TA6183 DARLINGTON TRANSISTOR ARRAY
Text: HARRIS SEflICOND SECTOR blE D • 43DP271 004703S bSG H H A S CA3146, CA3183 33 H a r r i s S E M I C O N D U C T O R ■ W » W W High-Voltage Transistor Arrays March 1993 Features Description • Matched General Purpose Transistors • VBE Matched ±5mV Max
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43DP271
004703S
CA3146,
CA3183
CA3146A,
CA3183A,
CA3183*
A3146A
CA3146
AN5296 Application of the CA3018 Integrated
TA618
ca3083
relay ts4
harris transistors
transistor 102
CA3183
transistor 9-t
TA6183
DARLINGTON TRANSISTOR ARRAY
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smd transistor marking 12W
Abstract: smd transistor 12W 3 pins SMD transistor Marking 13w transistor SMD 12W TRANSISTOR SMD 13W smd transistor 12W 98 transistor te 2305 smd transistor LY smd transistor 12W 12W smd transistor
Text: 8. P r e c a u t io n s in H a n d l i n g s urfa c e m o u n t d e v ic e s S M D types of surface m ount transistors, as described below: (1) Super Mini Transistor (TO-236 equivalent) The Super Mini Transistor’s envelope is com parable to those of the TO-236 and SOT-23
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O-126
O-220
O-236
OT-23
O-220SM
O-22QSM
T0-220SM
smd transistor marking 12W
smd transistor 12W 3 pins
SMD transistor Marking 13w
transistor SMD 12W
TRANSISTOR SMD 13W
smd transistor 12W 98
transistor te 2305
smd transistor LY
smd transistor 12W
12W smd transistor
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Untitled
Abstract: No abstract text available
Text: CA3146, CA3146A, CA3183, CA3183A HARRIS S E M I C O N D U C T O R August 1996 High-Voltage Transistor Arrays Features Description • Matched General Purpose Transistors - V qe M atch. ±5mV Max • Operation from DC to 120MHz (CA3146, CA3146A)
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CA3146,
CA3146A,
CA3183,
CA3183A
120MHz
CA3146A)
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PDF
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Untitled
Abstract: No abstract text available
Text: O K I semiconductor MSA4709 SUBSCRIBER LINE INTERFACE CIRCUIT GENERAL DESCRIPTION The MSA4709 is designed to provide BSH functions and to meet PABX transmission performance requirements. This device can replace the hybrid transformer circuit. FEATURES • B Battery feed , S (Supervision), and H
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MSA4709
MSA4709
-24V/-48V)
150KH
IV-D-25
IV-D-26
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at08a
Abstract: electronic ballast with MJE13002 electronic 40 w tube light choke 40 w electronic tube light choke SIMPLE 40w inverter circuit tube light choke test FERRITE core TRANSFORMER 300 watt inverter MJE12007 Ferrite 3c8 ELECTRONIC BALLAST 40W SCHEMATIC
Text: ELECTRONIC BALLASTS, Prepare,y R, J.Haver Motorola Inc. Voltage fed and current fed resonant inverter circuits for fluorescent lamp ballasts are discussed and a design example is presented. ,:!$,. A typical fluorescent lamp is a l-to 2-inch diameter on its
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200mA.
MJE13002
200kHz
4-15V)
200mA
AR1635,
at08a
electronic ballast with MJE13002
electronic 40 w tube light choke
40 w electronic tube light choke
SIMPLE 40w inverter circuit
tube light choke test
FERRITE core TRANSFORMER 300 watt inverter
MJE12007
Ferrite 3c8
ELECTRONIC BALLAST 40W SCHEMATIC
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NJM062
Abstract: ic njm4558 pin diagram
Text: J-FET INPUT OPERATIONAL AMPLIFIER NJM062/064 The NJM062/064 are J-F E T input operational amplifiers which were designed as low-power versions of the NJM082. They feature high input impedance, wide bandwidth, high slew rate, and low input offset and bias current. The NJM062
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NJM062/064
NJM062/064
NJM082.
NJM062
NJM4558/2043/2904/3404/072
NJM064
NJM2902/3403/2058/2059/2060.
ic njm4558 pin diagram
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NJM062
Abstract: NJM082D NJM064 NJM082 transisters 429 dip8
Text: NJM062/064 J-FET INPUT OPERATIONAL AMPLIFIER PACKAGE OUTLINE • GENERAL DESCRIPTION The N JM 062/064 are J-FET input operational am plifiers which were designed as low-power versions of the NJM082. They feature high input impedance, wide bandwidth, high slew rate, and low input
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NJM062/064
NJM062/064
NJM082.
NJM062
NJM4558/2043/2904/3404/072
NJM064
NJM2902/3403/
10l2n
NJM082D
NJM082
transisters
429 dip8
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Untitled
Abstract: No abstract text available
Text: M3825X Group SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER The M3825x group is an 8-bit microcomputer de signed with MELPS 740 core technology. The microcomputer is equipped with additional functions including an LCD circuit, A-D convertor and UART. The M3825x is available in several configurations
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M3825X
100pF
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TRANSISTOR 642
Abstract: ca301b transistor 123 DL CA3018 CA3018A ICAN-5296 529B I426 f425 CA3016
Text: Arrays E SOLID STATE 01 1 e | 3075001 DGlMSfifl 5 | CA3018, CA3018A General-Purpose Transistor Arrays Two Isolated Transistors and a Darlington-Connected Transistor Pair For Low-Power Applications at Frequencies from DC Through the VHF Range features: Matched monolithic general
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CA3018,
CA3018A
CA3018)
CA3018A
CA3018
I4260AI
92CS-M258RI
92CS-IS196
TRANSISTOR 642
ca301b
transistor 123 DL
ICAN-5296
529B
I426
f425
CA3016
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Untitled
Abstract: No abstract text available
Text: GOULD 4055916 GOUL D IN C / GOULD A M I SEMI CONDUCTOR 03 DIV D • 03E MDSSTlb 1 1494 DQ114TM 0^ TABLE OF CONTENTS SECTION 1: DESIGN INFORMATION 1.1 CHOOSING AN ARRAY. 1-5 1.1.1 Determining Gate Count. 1-6
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DQ114TM
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an5296
Abstract: CA3146E 3183a AN5296 Application of the CA3018 Integrated Harris CA3146e CA3146 CA3183M96 3146A CA3183 CA3146 NPN
Text: CA3146, CA3146A, CA3183, CA3183A S E M I C O N D U C T O R High-Voltage Transistor Arrays August 1996 Features Description • Matched General Purpose Transistors - VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV Max • Operation from DC to 120MHz (CA3146, CA3146A)
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CA3146,
CA3146A,
CA3183,
CA3183A
120MHz
CA3146A)
an5296
CA3146E
3183a
AN5296 Application of the CA3018 Integrated
Harris CA3146e
CA3146
CA3183M96
3146A
CA3183
CA3146 NPN
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PDF
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Sony CXA1191M
Abstract: philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide
Text: Untitled HAM RADIO FILE - Various pinouts saved from the Chipdir 2010 http://www.chipdir.org/ 0512d -0512d +-\/-+ 1 -|5V in gnd in|- 24 2 -|5V in gnd in|- 23 3 -|5V in gnd in|- 22
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0512d
------------------------------------0512d
z86e04
Sony CXA1191M
philips ecg master replacement guide
FZK101
YD 803 SGS
FZK 101 Siemens
CMC 707 am radio receiver
philips ecg semiconductors master replacement guide
CXA1191M
ym2612
ecg semiconductors master replacement guide
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Untitled
Abstract: No abstract text available
Text: Voltage Followers S G 1 0 2 /2 0 2 /3 0 2 SG110/210/310 Th e S G 102/202/302 are high-gain operational am plifiers designed sp ecifically fo r unity-gain non-inverting voltage follow er applications. Th e devices incorporate advanced super-beta transistor processing techniques to
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SG110/210/310
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AN5296 Application of the CA3018 Integrated
Abstract: an5296 CA3146 CA3183 CA3183A CA3018 CA3046 CA3083 CA3146A CA3146AE
Text: CA3146, CA3146A, CA3183, CA3183A Data Sheet September 1998 File Number 532.4 High-Voltage Transistor Arrays Features The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a common monolithic substrate. • Matched General Purpose Transistors
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CA3146,
CA3146A,
CA3183,
CA3183A
CA3183A,
CA3183
120MHz
AN5296 Application of the CA3018 Integrated
an5296
CA3146
CA3183A
CA3018
CA3046
CA3083
CA3146A
CA3146AE
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PDF
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NJM062
Abstract: No abstract text available
Text: J-fET INPUT O P E R A M M L AMPLIFIER ^ NJM062/064 T he NJM062/064 are J-F E T input operational amplifiers which w ere designed as low-power versions of the NJM082. T hey featu re high input im pedance, wide bandw idth, high slew rate, and low input offset and bias current. T he NJM062
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NJM062/064
NJM062/064
NJM082.
NJM062
NJM4558/2043/2904/3404/072
NJM064
NJM2902/3403/2058/2059/2060.
NJM062/
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Untitled
Abstract: No abstract text available
Text: NJM062/064 J-fET INPUT OPERATIONAL AMPLIFIER • GENERAL DESCRIPTION PACKAGE OUTLINE T he N J M 062/064 are J-FET input operational am plifiers w hich were designed as low -p ow er versions o f the N JM 082. They feature high input impedance, w ide bandwidth, high slew rate, and low input
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OCR Scan
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NJM062/064
MQ62D
KJM82M
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PDF
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NJM062
Abstract: No abstract text available
Text: J-FET INPUT OPERATIONAL AMPLIFIER NJM062/064 T he NJM062/064 are J-F E T input operational amplifiers which were designed as low-power versions of the NJM082. T hey feature high input im pedance, wide bandw idth, high slew rate, and low input offset and bias current. T he NJM062
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OCR Scan
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NJM062/064
NJM062/064
NJM082.
NJM062
NJM4558/2043/2904/3404/072
NJM064
NJM2902/3403/2058/2059/2060.
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PDF
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rs flip-flop IC 7400
Abstract: 74ls105 TTL LS 7400 74LS series logic gates 7400 fan-out 74LS 3 input AND gate IC TTL 7400 schematic 74LS04 fan-out 74ls series logic family 90 watts inverter by 12v dc with 6 transisters
Text: GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS Ovar operating free-air temper ature range unless otherwise noted Supply Voltage Vq c (See Note 1) Input Voltage V|n (See Note 1) Interemitter Voltage (See Note 2) Resistor Node Voltage, 54121, 74121 (See Note 1)
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PDF
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Untitled
Abstract: No abstract text available
Text: J-FET INPUT OPERATIONAL AMPLIFIER NJM062/064 The NJM062/064 are J-FET input operational amplifiers which were designed as low-power versions of the NJM082. They feature high input impedance, wide bandwidth, high slew rate, and low input offset and bias current. The NJM062
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OCR Scan
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NJM062/064
NJM062/064
NJM082.
NJM062
NJM4558/2043/2904/3404/072
NJM064
NJM2902/3403/2058/2059/2060.
Input62
NJM062/
100ffi)
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