TRANSISTOR 100N Search Results

TRANSISTOR 100N Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 100N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
RB521S-30 Abstract: UML12N Text: UML12N Transistors General purpose transistor isolated transistor and diode UML12N 2SC4617and RB521S-30 are housed independently in a UMT5 package. 1.3 2.0 0.65 0.65 0.9 2.1 0~0.1 0.1Min. zStructure Silicon epitaxial planar transistor Schottky barrier diode	Original	UML12N 2SC4617and RB521S-30 SC-88A UML12N	PDF
MARKING L12 Abstract: RB521S-30 UML12N Text: UML12N Transistors General purpose transistor isolated transistor and diode UML12N 2SC4617and RB521S-30 are housed independently in a UMT5 package. 1.3 2.0 0.65 0.65 0.9 2.1 0~0.1 0.1Min. zStructure Silicon epitaxial planar transistor Schottky barrier diode	Original	UML12N 2SC4617and RB521S-30 SC-88A 32MHZ MARKING L12 UML12N	PDF
2sa1929 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1929 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Mitsubishi 2SA1929 is a silicon PNP epitaxial type transistor. It is designed for	OCR Scan	2SA1929 2SA1929 -100V 300mA, 100Hz) 110mV 270Hz X10-3	PDF
2SA2018 Abstract: RB521S-30 2SA20 Text: UML6N Transistors General purpose transistor isolated transistor and diode UML6N 2SA2018 and RB521S-30 are housed independently in a UMT package. 1.3 2.0 0.65 0.65 0.9 (1) (5) 2.1 0~0.1 0.1Min. zStructure Silicon epitaxial planar transistor Schottky barrier diode	Original	2SA2018 RB521S-30 SC-88A 2SA20	PDF
BJT IC Vce Abstract: NPN Transistor Pair HFA3134 npn tr array pspice high frequency transistor npn 8 transistor array pspice model MM3134 525E Text: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model June 1998 MM3134 Introduction Parameters Not Modeled This application note describes the SPICE transistor model for the bipolar devices that comprise the HFA3134, Ultra High Frequency Transistor Array. This array is fabricated with	Original	HFA3134 MM3134 HFA3134, BJT IC Vce NPN Transistor Pair npn tr array pspice high frequency transistor npn 8 transistor array pspice model MM3134 525E	PDF
HFA3134 Abstract: npn 8 transistor array Text: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model TM Application Note June 1998 MM3134 Introduction Parameters Not Modeled This application note describes the SPICE transistor model for the bipolar devices that comprise the HFA3134, Ultra High Frequency Transistor Array. This array is fabricated with	Original	HFA3134 MM3134 HFA3134, npn 8 transistor array	PDF
IGT6D21 Abstract: IGT6E21 Text: IGT6D21.E21 Insulated Gate Bipolar Transistor This IG T " Transistor Insulated Gate Bipolar Transistor is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high	OCR Scan	IGT6D21 -f--10% IGT6E21	PDF
DRF1601 Abstract: smd transistor js UHF POWER TRANSISTOR NPN medium power transistor in a smd FR4 epoxy dielectric constant 4.2 power transistor SMD TRANSISTOR smd transistor 026 PL SOT223 UHF POWER Text: UHF POWER TRANSISTOR DRF1601 NPN SiGe RF TRANSISTOR The DRF1601 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1601 can be used as a driver device or an output device, depending on the specific application.	Original	DRF1601 DRF1601 OT-223 900MHz 100nF 100pF smd transistor js UHF POWER TRANSISTOR NPN medium power transistor in a smd FR4 epoxy dielectric constant 4.2 power transistor SMD TRANSISTOR smd transistor 026 PL SOT223 UHF POWER	PDF
smd transistor k 1540 Abstract: 703 TRANSISTOR smd transistor 835 transister transister smd DRF1401 NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js Text: UHF POWER TRANSISTOR DRF1401 NPN SiGe RF TRANSISTOR The DRF1401 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1401 can be used as a driver device or an output device, depending on the specific application.	Original	DRF1401 DRF1401 OT-223 900MHz 100nF 100pF smd transistor k 1540 703 TRANSISTOR smd transistor 835 transister transister smd NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js	PDF
K105 transistor Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11 Text: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and	OCR Scan	IGT4D11 K105 transistor transistor k105 IGT4E11 IGT-4E11	PDF
Transistor B 1566 Abstract: ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734 Text: UHF POWER TRANSISTOR DRF1402F NPN SiGe RF TRANSISTOR SOT-89 The DRF1402F is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-89 SMD package. 4 The DRF1402F can be used as a driver device or an output device, depending on the specific application	Original	DRF1402F OT-89 DRF1402F OT-89 465MHz 100nF Transistor B 1566 ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734	PDF
5962F0721805VXC Abstract: No abstract text available Text: Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH The ISL73096, ISL73127 and ISL73128 are radiation Features hardened bipolar transistor arrays. The ISL73096 consists of	Original	ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH ISL73096, ISL73127 ISL73128 ISL73096 5962F0721805VXC	PDF
Untitled Abstract: No abstract text available Text: fcT I ISI E G 2SC D • Ö235b05 G0G4352 T NPN Silicon Planar Transistor BD 424 T- 23- o f SIEMENS AKTIEN6ESELLSCHAF 25C 04352 BD 424 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. It is particularly intended for use as driver transistor in horizontal deflection stages of TV sets	OCR Scan	235b05 G0G4352 Q62702-D1068	PDF

2sa 940 Abstract: 2SC2530 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu Text: FUJITSU MICROELECTRONICS m 3 7 4 ^ 5 0Dlb5Sb 2 BBFMI 31E D FUJITSU January 1990 Edition 1.1 PRODUCT P R O FILE' 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with Fujttus's unique Ring Em itter Transistor R E T technology. R ET devices are	OCR Scan	2SC2530 35MHz 2sa 940 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu	PDF
transistor BD 424 Abstract: a06 transistor 000M353 BD424 Q62702-D1068 S100 transistor A08 A07 NPN transistor transistor bd 202 Text: bâ I 25C D • fl23Sb05 G0D4352 T ISIEG BD 424 NPN Silicon Planar Transistor T- 23- o f SIEMENS AKTIEN6ESELLSCHAF 25C 04352 BD 424 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. It is particularly intended for use as driver transistor in horizontal deflection stages of TV sets	OCR Scan	235b05 G0G4352 Q62702-D1068 QDQ43SM BD424 transistor BD 424 a06 transistor 000M353 BD424 Q62702-D1068 S100 transistor A08 A07 NPN transistor transistor bd 202	PDF
UTC 7312 Abstract: BUX 88 S BUX11 bux THOMSON BUX 115 BUX11N TRANSISTOR -R7t Text: *BUX 11N NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TR AN S IS TO R S IL IC IU M NPN, T R IP L E D IF F U S E Preferred device D is p o s itif recommandé High speed, high current, high power transistor Transistor de puissance rapide, f o r t couran t 160 V	OCR Scan	CB-19 UTC 7312 BUX 88 S BUX11 bux THOMSON BUX 115 BUX11N TRANSISTOR -R7t	PDF
Untitled Abstract: No abstract text available Text: HFA3102 Semiconductor Dual Long-Tailed Pair Transistor Array August 1996 Description Features High Gain-Bandwidth Product fy . . . . 10GHz High Power Gain-Bandwidth Product . . 5GHz High Current Gain (h p ^ ). 70 Noise Figure (Transistor).	OCR Scan	HFA3102 10GHz HFA3102 10GHz) 1340nm 1320nm 1320um	PDF
2SC2320L Abstract: h a 431 transistor RO10K Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC2320L FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC2320L is a silicon NPN epitaxial type transistor designed for low OUTLINE DRAWING Unit:mrn < 5.6MAX	OCR Scan	2SC2320L 2SC2320L 100nnA, NVS150mV SC-43 270Hz h a 431 transistor RO10K	PDF
Untitled Abstract: No abstract text available Text: Central CZT2000 Sam lcoitductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2000 type is an NPN Epitaxial Planar Silicon Darlington Transistor manufactured in an epoxy molded surface mount package,	OCR Scan	CZT2000 OT-223 25piA 16OmA, 160mA 100nA 160mA	PDF
UN 2911 Abstract: No abstract text available Text: ¡si H a r r i <33 semiconductor HFA3046, HFA3096, HFA3127, HFA3128 s Ultra High Frequency Transistor Array July 1995 Features Description • NPN Transistor fT .8GHz • NPN Current Gain (h FE) .70	OCR Scan	HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 UN 2911	PDF
transistor amplifier 5v to 6v Abstract: transistor 2sA1015 2sa1015 Audio Frequency General Purpose Amplifier 2sa1015 transistor l00mA Text: PNP SILICON TRANSISTOR TO-92B 2SA1015 is PNP silicon planar transistor designed for audio frequency general purpose amplifier applications and driver stage amplifier applications. ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	2SA1015 O-92B 400mW 100mA l00mA 100nA 300ms, Boxi9477, transistor amplifier 5v to 6v transistor 2sA1015 Audio Frequency General Purpose Amplifier 2sa1015 transistor	PDF
CZT5401 Abstract: No abstract text available Text: Central CZT5401 Semiconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT5401 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.	OCR Scan	CZT5401 OT-223 TheCENTRALSEMICONDUCTORCZT5401 100MHz	PDF
transistor 2SA673 Abstract: TRANSISTOR BO 341 MICRO ELECTRONICS ltd transistor 2SA673 400MW Text: 2SA673 SILICON TRANSISTOR 2SA673 is PNP silicon epitdxial transistor design for medium power amplifiers and switching applications. ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VCBO VCEO VEBO Collector Current	OCR Scan	2SA673 500mA 400mW 100mA l00nA transistor 2SA673 TRANSISTOR BO 341 MICRO ELECTRONICS ltd transistor	PDF

TRANSISTOR 100N Search Results

TRANSISTOR 100N Result Highlights (5)

TRANSISTOR 100N Datasheets Context Search

la 4440 amplifier circuit diagram 300 watt

RB521S-30

MARKING L12

2sa1929

2SA2018

BJT IC Vce

HFA3134

IGT6D21

DRF1601

smd transistor k 1540

K105 transistor

Transistor B 1566

5962F0721805VXC

Untitled

2sa 940

transistor BD 424

UTC 7312

Untitled

2SC2320L

Untitled

UN 2911

transistor amplifier 5v to 6v

CZT5401

transistor 2SA673