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    TRANSISTOR 10MHZ 60W Search Results

    TRANSISTOR 10MHZ 60W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 10MHZ 60W Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor 10mhz 60w

    Abstract: transistor 38W 12.5W bypass transistor QPP-307
    Text: QPP-307 60W; 2110-2170MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-307 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the driver or output stage of linear RF power amplifiers for cellular base stations.


    Original     		QPP-307 2110-2170MHz QPP-307 H11860) H11861) transistor 10mhz 60w transistor 38W 12.5W bypass transistor PDF

    transistor 10mhz 60w

    Abstract: 60W POWER AMPLIFIER CIRCUIT MAPLST2122-060CF transistor f1
    Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 60W, 28V 4/6/2005 MAPLST2122-060CF Preliminary Features Package Style Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications.


    Original     		MAPLST2122-060CF 28VDC, -45dB 096MHz) 2110MHz) transistor 10mhz 60w 60W POWER AMPLIFIER CIRCUIT MAPLST2122-060CF transistor f1 PDF

    Crss RF

    Abstract: No abstract text available
    Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 60W, 28V 2/18/03 MAPLST2122-060WF Preliminary Features Package Style Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications.


    Original     		MAPLST2122-060WF 28VDC, -45dB 096MHz) 2110MHz) Crss RF PDF

    Cree Microwave

    Abstract: UGF21060 UGF21060F UGF21060P
    Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original     		UGF21060 17GHz, MRF21060/MRF21060S. UGF21060 Cree Microwave UGF21060F UGF21060P PDF

    transistor 10mhz 60w

    Abstract: UGF21060 UGF21060F UGF21060P mosfet class ab rf
    Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original     		UGF21060 17GHz, MRF21060/MRF21060S. 700mA 30kHz 2140MHz 84MHz 10MHz UGF21060 transistor 10mhz 60w UGF21060F UGF21060P mosfet class ab rf PDF

    60W POWER AMPLIFIER

    Abstract: UGF16060F UGF16060P UPF16060 transistor 10mhz 60w
    Text: UPF16060 60W, 1.66 GHz, 26V Broadband RF Field Effect Transistor Power N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband Commercial and Industrial applications in the frequency band 1626 to 1660 MHz. Rated with a minimum output power of 60W, it is ideal for 16QAM, CDMA, TDMA,


    Original     		UPF16060 16QAM, 400kHz) 600kHz) 540mA 1660MHz UPF16060 60W POWER AMPLIFIER UGF16060F UGF16060P transistor 10mhz 60w PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR BDY54 • High Power • Hermetic TO-3 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ


    Original     		BDY54 O-204AA) PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR BDY54 • High Power • Hermetic TO-3 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ


    Original     		BDY54 O-204AA) PDF

    ATC100B

    Abstract: MAPLST2122-090CF transistor f1
    Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 90W, 28V 4/6/2005 MAPLST2122-090CF Preliminary Package Style Features Q Q Q Q Q Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, W-CDMA and multicarrier power


    Original     		MAPLST2122-090CF 28VDC, -45dB 096MHz) 2110MHz) ATC100B MAPLST2122-090CF transistor f1 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 90W, 28V 2/18/2003 MAPLST2122-090WF Preliminary Package Style Features Q Q Q Q Q Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, W-CDMA and multicarrier power


    Original     		MAPLST2122-090WF 28VDC, -45dB 096MHz) 2110MHz) PDF

    tf 115 250v 2a

    Abstract: BUL53B
    Text: BUL53B–SM SEME LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA 11.5 2.0 0.25 3.5 1 3.0 3 • FAST SWITCHING tf = 100ns 9.0 1.5 15.8 4.6 3.5 2 • HIGH ENERGY RATING FEATURES 8.5 TO220 Ceramic Surface Mount Package


    Original     		BUL53BSM 100ns) 100mA 10MHz tf 115 250v 2a BUL53B PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    LAB 250 LB

    Abstract: No abstract text available
    Text: Illl = & = Illl SEME BUL53B-SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA • CERAMIC SURFACE MOUNT PACKAGE :- ► , • FULL MIL/AEROSPACE TEMPERATURE RANGE 2.0 3.5 < ► 4— * 9'f <-


    OCR Scan     		BUL53B-SM 100ns) T0220 100mA 100mA 10MHz LAB 250 LB PDF

    120v 10a transistor

    Abstract: No abstract text available
    Text: BDY90 MECHANICAL DATA NPN SILICON TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 FEATURES 1.52 (0.06) 3.43 (0.135) 2 • • 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197)


    Original     		BDY90 O-204AA) 120v 10a transistor PDF

    vce 500v NPN Transistor

    Abstract: BUL53BSMD
    Text: BUL53BSMD ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 4 .1 4 0 .1 6 3 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 )


    Original     		BUL53BSMD 100ns) 100mA 300ms 10MHz vce 500v NPN Transistor BUL53BSMD PDF

    Untitled

    Abstract: No abstract text available
    Text: BUL53BSMD ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 4 .1 4 0 .1 6 3 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 )


    Original     		BUL53BSMD 100ns) 100mA 300ms 10MHz PDF

    transistor bipolar driver schematic

    Abstract: L9801 50W car power amplifier AN271 complementary bipolar transistor driver schematic Electronic car ignition circuit npn pnp transistor bipolar cross reference resistenc
    Text: AN271 APPLICATION NOTE HIGH SIDE MONOLITHIC SWITCH IN MULTIPOWER-BCD TECHNOLOGY by C.Cini, C. Diazzi, D. Rossi, S. Stortii Recent advances in integrated circuit technology have allowed the realization of a new mixed process integrating isolated DMOS power transistors in combination with bipolar and CMOS signal structures on the same chip.


    Original     		AN271 transistor bipolar driver schematic L9801 50W car power amplifier AN271 complementary bipolar transistor driver schematic Electronic car ignition circuit npn pnp transistor bipolar cross reference resistenc PDF

    complementary bipolar transistor driver schematic

    Abstract: L9801 12V DC to 19V dC converter schematic diagram
    Text: APPLICATION NOTE HIGH SIDE MONOLITHIC SWITCH IN MULTIPOWER-BCD TECHNOLOGY b y C.Cin i, C. Diazzi, D. Ro ssi, S. Sto rti Recent advances in integrated circuit technology have allowed the realization of a new mixed process integrating isolated DMOS power transistors in


    Original     		PDF

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


    Original     		2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878 PDF

    CLC431

    Abstract: CLC432 CLC5665 698W
    Text: N CLC5665 Low Distortion Amplifier with Disable General Description Features The CLC5665 is a low-cost, wideband amplifier that provides very low 2nd and 3rd harmonic distortion at 1MHz -89/-92dBc . The great slew rate of 1800V/ms, bandwidth of 90MHz (Av = +1) and


    Original     		CLC5665 CLC5665 -89/-92dBc) 800V/ms, 90MHz 20MHz CLC431 CLC432 698W PDF

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: FLL600IQ-2C 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B IMT-2000 GAAS FET AMPLIFIER f 10Mhz to 2 GHz
    Text: FUJITSU APPLICATION NOTE - No 005 60-W, 2.11 – 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application using the FLL600IQ-2C GaAs FET FEATURES • Targeted WCDMA ACPR at 6 W Average • Easy tuning for Power, WCDMA ACPR and IMD • Over 60 Watts Pout over entire band


    Original     		IMT-2000 FLL600IQ-2C 151mA FUJITSU MICROWAVE TRANSISTOR 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B GAAS FET AMPLIFIER f 10Mhz to 2 GHz PDF

    UA78HGSC

    Abstract: SL490DP N82S100 TCA280A ne5534h UA78HGS mw RADIO RECEIVER IC zn414 TCA280A equivalent MM58174 ML929DP
    Text: V o ltag e R eg ulator S electio n C hart Positive Three Terminal Regulators Output Current§ Package + 5V + 6V + 8V + 12V + 15V + 18V + 24V TO-92 LM78L05ACZ — — _ _ LM78L12ACZ LM78L15ACZ 0.1A .0 — — TO-92 LM340LAZ-5 _ _ LM340LAZ-12 LM340LAZ-15


    OCR Scan     		LM78L05ACZ LM78L12ACZ LM78L15ACZ LM340LAZ-5 LM340LAZ-12 LM340LAZ-15 LM2931Z5 LM78L05ACH LM78L12ACH LM78L15ACH UA78HGSC SL490DP N82S100 TCA280A ne5534h UA78HGS mw RADIO RECEIVER IC zn414 TCA280A equivalent MM58174 ML929DP PDF

    VARIABLE POWER SUPPLY. 0 - 30V, LM723

    Abstract: LM741 audio amplifiers IC LM741 timer circuit diagram lm35 sensor interfacing with adc0808 diagram LM338 TO-3 spice model LM741 AND LM386 Audio Amplifier lm1485 LM1084 spice LF351 op-amp audio equalizer smd code marking 162 sot23-5
    Text: Welcome to National Semiconductor’s Summer 2000 Edition of the Linear/Mixed-Signal Designer’s Guide! Included in this guide are: • • • • • Alphanumeric index Product selection trees Product selection guides Package descriptions CD-ROM with complete datasheets, a pdf version of this guide, and other valuable information


    Original     		PDF

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: understanding thermal basics for microwave power FLL600IQ-3 Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz
    Text: FUJITSU APPLICATION NOTE - No 007 60-W, 2.5- 2.7 GHz Push-Pull Amplifier For MMDS Base-Station Application Using The FLL600IQ-3 GaAs FET Device FEATURES • Targeted WCDMA ACPR at 6 W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 60 Watts Pout over entire band


    Original     		FLL600IQ-3 60-Wpush-pull 117mA FUJITSU MICROWAVE TRANSISTOR understanding thermal basics for microwave power Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz PDF