TRANSISTOR 1205 Search Results

TRANSISTOR 1205 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR 1205 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
J2735 Abstract: DVB-t2 ATC800B JESD625-A 61 TRANSISTOR DVBT2 transistor smd 723 GP414 Text: BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 1 — 11 May 2011 Objective data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W	Original	BLF6G15L-500H; BLF6G15LS-500H BLF6G15L-500H 6G15LS-500H J2735 DVB-t2 ATC800B JESD625-A 61 TRANSISTOR DVBT2 transistor smd 723 GP414	PDF
Untitled Abstract: No abstract text available Text: BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W	Original	BLF6G15L-500H; BLF6G15LS-500H BLF6G15L-500H 6G15LS-500H	PDF
Untitled Abstract: No abstract text available Text: BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 2 — 16 September 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W	Original	BLF6G15L-500H; BLF6G15LS-500H BLF6G15L-500H 6G15LS-500H	PDF
sot467b Abstract: No abstract text available Text: BLF6H10L-160; BLF6H10LS-160 Power LDMOS transistor Rev. 2 — 12 December 2012 Product data sheet 1. Product profile 1.1 General description A 160 W LDMOS RF power transistor for base station applications. The transistor can deliver 160 W from 729 MHz to 960 MHz. The excellent ruggedness and broadband	Original	BLF6H10L-160; BLF6H10LS-160 BLF6H10L-160 6H10LS-160 sot467b	PDF
2iy transistor Abstract: No abstract text available Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology	OCR Scan	BUK9628-55 SQT404 2iy transistor	PDF
Untitled Abstract: No abstract text available Text: PHOTOCOUPLER KB817-M GENERAL PURPOSE GENERAL PURPOSE HIGH ISOLATION VOLTAGE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES PHOTOCOUPLER SERIES FEATURES FEATURES 1.High isolation voltage between input and output Viso=5000 Vrms	Original	KB817-M KB817-M E225308 AD1557 MAR/14/2005	PDF
KB817-M Abstract: E225308 Text: PHOTOCOUPLER Part Number: KB817-M GENERAL PURPOSE GENERAL PURPOSE HIGH ISOLATION VOLTAGE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES PHOTOCOUPLER SERIES FEATURES FEATURES 1.High isolation voltage between input and output Viso=5000 Vrms	Original	KB817-M KB817-M E225308 100pcs/each AD1557 E225308	PDF
diode mark V6 Abstract: No abstract text available Text: PHOTOCOUPLER P// N: KB817-M GENERAL PURPOSE GENERAL PURPOSE HIGH ISOLATION VOLTAGE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES PHOTOCOUPLER SERIES FEATURES FEATURES 1.High isolation voltage between input and output Viso=5000 Vrms	Original	KB817-M KB817-M E225308 4000ions. AD1557 NOV/16/2005 diode mark V6	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
Untitled Abstract: No abstract text available Text: BLF2425M8L140; BLF2425M8LS140 Power LDMOS transistor Rev. 1 — 27 August 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.	Original	BLF2425M8L140; BLF2425M8LS140 BLF2425M8L140 BLF2425M8LS140 2425M8LS140	PDF
Untitled Abstract: No abstract text available Text: BLF8G22LS-240 Power LDMOS transistor Rev. 1 — 11 December 2012 Objective data sheet 1. Product profile 1.1 General description 240 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance	Original	BLF8G22LS-240	PDF
Untitled Abstract: No abstract text available Text: BLF8G22LS-270 Power LDMOS transistor Rev. 2 — 3 December 2012 Preliminary data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance	Original	BLF8G22LS-270	PDF
Untitled Abstract: No abstract text available Text: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.	Original	BLF2425M7L250P; BLF2425M7LS250P BLF2425M7L250P BLF2425M7LS250P 2425M7LS250P	PDF

Untitled Abstract: No abstract text available Text: BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 3 — 6 September 2012 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.	Original	BLF2425M7L140; BLF2425M7LS140 BLF2425M7L140 BLF2425M7LS140	PDF
Untitled Abstract: No abstract text available Text: BLF10M6135; BLF10M6LS135 Power LDMOS transistor Rev. 1 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF10M6135; BLF10M6LS135 BLF10M6135	PDF
Untitled Abstract: No abstract text available Text: BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 3 — 6 September 2012 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.	Original	BLF2425M7L140; BLF2425M7LS140 BLF2425M7L140 BLF2425M7LS140	PDF
Untitled Abstract: No abstract text available Text: BLF8G22LS-220 Power LDMOS transistor Rev. 1 — 20 December 2012 Objective data sheet 1. Product profile 1.1 General description 220 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance	Original	BLF8G22LS-220	PDF
Untitled Abstract: No abstract text available Text: BLF8G20LS-260A Power LDMOS transistor Rev. 2 — 9 November 2012 Preliminary data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.	Original	BLF8G20LS-260A	PDF
Untitled Abstract: No abstract text available Text: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 3 — 26 February 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.	Original	BLF2425M7L250P; BLF2425M7LS250P BLF2425M7L250P BLF2425M7LS250P 2425M7LS250P	PDF
Untitled Abstract: No abstract text available Text: BLF8G22LS-240 Power LDMOS transistor Rev. 2 — 22 January 2013 Preliminary data sheet 1. Product profile 1.1 General description 240 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance	Original	BLF8G22LS-240	PDF
Untitled Abstract: No abstract text available Text: BLF8G22LS-270 Power LDMOS transistor Rev. 1 — 12 October 2012 Objective data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance	Original	BLF8G22LS-270	PDF
BLF8G20LS-260A Abstract: ATC800B blf8g20 X3C19 Text: BLF8G20LS-260A Power LDMOS transistor Rev. 1 — 13 September 2012 Objective data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.	Original	BLF8G20LS-260A BLF8G20LS-260A ATC800B blf8g20 X3C19	PDF
Untitled Abstract: No abstract text available Text: BLF10M6160; BLF10M6LS160 Power LDMOS transistor Rev. 1 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF10M6160; BLF10M6LS160 BLF10M6160	PDF

TRANSISTOR 1205 Search Results

TRANSISTOR 1205 Result Highlights (5)

TRANSISTOR 1205 Datasheets Context Search

la 4440 amplifier circuit diagram 300 watt

J2735

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sot467b

2iy transistor

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KB817-M

diode mark V6

2N2222A 338

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BLF8G20LS-260A

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