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    TRANSISTOR 126M Search Results

    TRANSISTOR 126M Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 126M Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HAT1058C

    Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,


    Original     		notic50 SON3024-8 HAT1062G ADE-A08-003Q HAT1058C HAT2106G HAT1068C Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23 PDF

    OC 140 germanium transistor

    Abstract: germanium power devices corporation germanium transistors NPN OC 74 germanium transistor HSD879D Germanium Transistor
    Text: HI-SINCERITY Spec. No. : HD200203 Issued Date : 1996.07.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. TO-126ML Features • Charger-up time is about 1 ms faster than of a germanium transistor.


    Original     		HD200203 HSD879D O-126ML 183oC 217oC 260oC OC 140 germanium transistor germanium power devices corporation germanium transistors NPN OC 74 germanium transistor HSD879D Germanium Transistor PDF

    germanium transistors NPN

    Abstract: in 3003 TRANSISTOR HSD879D Germanium Transistor
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HD200203 Issued Date : 1996.07.15 Revised Date : 2002.02.26 Page No. : 1/3 HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. Features TO-126ML • Charger-up time is about 1 ms faster than of a germanium transistor.


    Original     		HD200203 HSD879D O-126ML germanium transistors NPN in 3003 TRANSISTOR HSD879D Germanium Transistor PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 PDF

    HBD437D

    Abstract: DSA0026081
    Text: HI-SINCERITY Spec. No. : HD200201 Issued Date : 2001.04.01 Revised Date : 2005.08.16 Page No. : 1/4 MICROELECTRONICS CORP. HBD437D COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD437D is silison epitaxial-base NPN power transistor in TO-126ML plastic


    Original     		HD200201 HBD437D HBD437D O-126ML HBD438D. O-126ML Collecto60 183oC 217oC 260oC DSA0026081 PDF

    HSB1109

    Abstract: HSD1609 sb1109 TL 188 TRANSISTOR PNP
    Text: HI-SINCERITY Spec. No. : HE6607 Issued Date : 1993.03.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSD1609 TO-126ML


    Original     		HE6607 HSB1109 HSD1609 O-126ML 183oC 217oC 260oC HSB1109 HSD1609 sb1109 TL 188 TRANSISTOR PNP PDF

    HSB1109

    Abstract: HSD1609
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6607 Issued Date : 1993.03.15 Revised Date : 2002.02.06 Page No. : 1/3 HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSD1609 TO-126ML


    Original     		HE6607 HSB1109 HSD1609 O-126ML HSB1109 HSD1609 PDF

    HSD1609

    Abstract: HSB1109
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6606 Issued Date : 1993.03.15 Revised Date : 2002.01.15 Page No. : 1/4 HSD1609 NPN EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSB1109 TO-126ML


    Original     		HE6606 HSD1609 HSB1109 O-126ML HSD1609 HSB1109 PDF

    MJE13003D

    Abstract: 180-TYP
    Text: DC COMPONENTS CO., LTD. R MJE13003D DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. TO-126ML Pinning .163 4.12


    Original     		MJE13003D O-126ML MJE13003D 180-TYP PDF

    lb123d

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. LB123D DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high voltage, high speed switching circuits, and amplifier applications. TO-126ML Pinning .163 4.12 .153(3.87) 1 = Emitter


    Original     		LB123D O-126ML lb123d PDF

    sd1609

    Abstract: sd 1609 TO126ML HSB1109 HSD1609
    Text: HI-SINCERITY Spec. No. : HE6606 Issued Date : 1993.03.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSD1609 NPN EPITAXIAL PLANAR TRANSISTOR Features • Low frequency high voltage amplifier • Complementary pair with HSB1109 TO-126ML


    Original     		HE6606 HSD1609 HSB1109 O-126ML 183oC 217oC 260oC sd1609 sd 1609 TO126ML HSB1109 HSD1609 PDF

    HMPSA44V

    Abstract: A44V
    Text: HI-SINCERITY Spec. No. : HE6611 Issued Date : 1993.05.17 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HMPSA44V NPN EPITAXIAL PLANAR TRANSISTOR Description The HMPSA44V is designed for application that require high voltage. Features TO-126ML


    Original     		HE6611 HMPSA44V HMPSA44V O-126ML 300mV HMPSA94V 183oC 217oC 260oC A44V PDF

    2SD882D

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. 2SD882D DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in output stage of 1W audio amplifier, voltage regulator, DC-DC converter and relay driver. TO-126ML Pinning


    Original     		2SD882D O-126ML 2SD882D PDF

    2SB772D

    Abstract: transistor pnp 30V 2A 1W transistor pnp 30V 1A 1W power ic 5v 1A 034
    Text: DC COMPONENTS CO., LTD. 2SB772D DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in output stage of 1W audio amplifier, voltage regulator, DC-DC converter and relay driver. TO-126ML Pinning


    Original     		2SB772D O-126ML -20mA, 2SB772D transistor pnp 30V 2A 1W transistor pnp 30V 1A 1W power ic 5v 1A 034 PDF

    HSB857D

    Abstract: HE6705
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2002.03.06 Page No. : 1/4 HSB857D PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. Absolute Maximum Ratings Ta=25°C TO-126ML • Maximum Temperatures


    Original     		HE6705 HSB857D O-126ML HSB857D HE6705 PDF

    TL 188 TRANSISTOR PNP

    Abstract: HTIP117D
    Text: HI-SINCERITY Spec. No. : HD200204 Issued Date : 2002.04.01 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HTIP117D PNP EPITAXIAL PLANAR TRANSISTOR Description TO-126ML The HTIP117D is designed for use in general purpose amplifier and low-speed


    Original     		HD200204 HTIP117D O-126ML HTIP117D 183oC 217oC 260oC TL 188 TRANSISTOR PNP PDF

    TL 188 TRANSISTOR PNP

    Abstract: HSB857D
    Text: HI-SINCERITY Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSB857D PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-126ML Absolute Maximum Ratings TA=25°C • Maximum Temperatures


    Original     		HE6705 HSB857D O-126ML 183oC 217oC 260oC TL 188 TRANSISTOR PNP HSB857D PDF

    C5201 transistor

    Abstract: c5201 Marking 8A 737 TRANSISTOR Transistor C5201 k 1457 BTC5201D3
    Text: Spec. No. : C653D3 Issued Date : 2003.10.03 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTC5201D3 Features • Low VCE sat • High BVCEO • Excellent current gain characteristics Symbol Outline TO-126ML


    Original     		C653D3 BTC5201D3 O-126ML UL94V-0 C5201 transistor c5201 Marking 8A 737 TRANSISTOR Transistor C5201 k 1457 BTC5201D3 PDF

    B1143

    Abstract: transistor D1683 2SD 1143 2SB1143S
    Text: Ordering number : EN2063C 2SB1143/2SD1683 Bipolar Transistor http://onsemi.com – 50V, (–)4A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • Adoption of FBET, MBIT processes


    Original     		EN2063C 2SB1143/2SD1683 O-126ML 2SB1143 B1143 transistor D1683 2SD 1143 2SB1143S PDF

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6602 Issued Date : 1993.03.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSC3953 NPN EPITAXIAL PLANAR TRANSISTOR Description High definition CRT display video output, wide-band amplifier. TO-126ML Features • High fT: 500MHz


    Original     		HE6602 HSC3953 O-126ML 500MHz 120Vmin 183oC 217oC 260oC PDF

    sc2682

    Abstract: HSC2682
    Text: HI-SINCERITY Spec. No. : HE6626 Issued Date : 1994.12.07 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSC2682 NPN EPITAXIAL PLANAR TRANSISTOR Description Audio frequency power amplifier, high frequency power amplifier. TO-126ML Absolute Maximum Ratings TA=25°C


    Original     		HE6626 HSC2682 O-126ML 183oC 217oC 260oC sc2682 HSC2682 PDF

    sd669a

    Abstract: HSD669A HSB649A
    Text: HI-SINCERITY Spec. No. : HE6630 Issued Date : 1995.12.18 Revised Date : 2006.07.27 Page No. : 1/4 MICROELECTRONICS CORP. HSD669A NPN Epitaxial Planar Transistor Description Low frequency power amplifier complementary pair with HSB649A TO-126ML Absolute Maximum Ratings T =25°C


    Original     		HE6630 HSD669A HSB649A O-126ML 150oC 200oC 183oC 217oC 260oC 245oC sd669a HSD669A HSB649A PDF

    HSB649A

    Abstract: HSD669A 180320 HSD669A-C
    Text: HI-SINCERITY Spec. No. : HE6630 Issued Date : 1995.12.18 Revised Date : 2003.06.18 Page No. : 1/3 MICROELECTRONICS CORP. HSD669A NPN EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier complementary pair with HSB649A TO-126ML Absolute Maximum Ratings Ta=25°C


    Original     		HE6630 HSD669A HSB649A O-126ML HSB649A HSD669A 180320 HSD669A-C PDF

    HSB649A

    Abstract: TL 188 TRANSISTOR PNP SB649A HSD669A
    Text: HI-SINCERITY Spec. No. : HE6629 Issued Date : 1995.12.18 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSB649A SILICON PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier complementary pair with HSD669A. TO-126ML Absolute Maximum Ratings TA=25°C


    Original     		HE6629 HSB649A HSD669A. O-126ML 183oC 217oC 260oC HSB649A TL 188 TRANSISTOR PNP SB649A HSD669A PDF