BUX20
Abstract: bux 716 transistor BUX
Text: *B U X 2 0 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN. TRIPLE DIFFUSE Preferred device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant Thermal fatigue inspection
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BUX20
CB-159
BUX20
bux 716
transistor BUX
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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PDF
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MMBT2369
Abstract: MARK 1J HIGH SPEED SWITCHING NPN SOT23 MMBT2369 SOT23
Text: MMBT2369 NPN Switching Transistor MMBT2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. C E SOT-23 Mark: 1J B Absolute Maximum Ratings * T a Symbol
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MMBT2369
MMBT2369
100mA.
OT-23
MARK 1J
HIGH SPEED SWITCHING NPN SOT23
MMBT2369 SOT23
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transistor smd 1E
Abstract: SMD Transistor 1f TRANSISTOR SMD MARKING CODE 1l TRANSISTOR SMD MARKING CODE 1a SMD transistor 1L 1b smd transistor smd transistor marking 1B SMD TRANSISTOR MARKING 1F transistor SMD 520 MARKING SMD npn TRANSISTOR 1a
Text: SMD General Purpose Transistor NPN BC846/BC847/BC848 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data SOT-23 SOT-23, Plastic Package Case: Solderable per MIL-STD-202G, Method 208
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BC846/BC847/BC848
OT-23
OT-23,
MIL-STD-202G,
BC846A
BC847A
BC847B
BC847C
BC848A
BC848B
transistor smd 1E
SMD Transistor 1f
TRANSISTOR SMD MARKING CODE 1l
TRANSISTOR SMD MARKING CODE 1a
SMD transistor 1L
1b smd transistor
smd transistor marking 1B
SMD TRANSISTOR MARKING 1F
transistor SMD 520
MARKING SMD npn TRANSISTOR 1a
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PDF
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PH3134-75S
Abstract: No abstract text available
Text: an AM P company Radar Pulsed Power Transistor, 75W, 1jxs Pulse, 10% Duty 3.1 • 3.4 GHz PH3134-75S Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry
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PH3134-75S
2-j11
PH3134-75S
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PDF
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Untitled
Abstract: No abstract text available
Text: I CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N-P N transistor Marking CMBT2369 = 1J PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 J.02 0.89* 2.00 0.60 0.40 0.90
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CMBT2369
100MHz;
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PDF
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1B marking transistor
Abstract: 33T4 CMBT2369
Text: CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N -P N transistor Marking CMBT2369 = 1J PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.48 0.38 0.14 opérés 3 Pin configuration 2.6 t = BASE 2 = EMITTER 3 = COLLECTOR 2.4 _1 .0 2 _ 0.89 0.60
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CMBT2369
100MHz;
1B marking transistor
33T4
CMBT2369
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PDF
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transistor j117
Abstract: j76 transistor CC-36 J1171 J117
Text: AfaCCM W an A M P company Radar Pulsed Power Transistor, 75W, 1jis Pulse, 10% Duty 3.1-3.4 GHz PH3134-75S Features • • • • • • • • NPN Silicon Microwave Power Transistor Com m on Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geom etry
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PH3134-75S
transistor j117
j76 transistor
CC-36
J1171
J117
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PDF
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Untitled
Abstract: No abstract text available
Text: CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N -P N transistor M arking CMBT2369 = 1J PACKAGE OU TLINE DETAILS A LL DIM ENSIONS IN m m _3.0_ 2.8 0.14 0.48 038 0.70 0.50 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1 2.6 1.4 1.2 2.4 R0.1 CÔÔ4T
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CMBT2369
100MHz;
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PDF
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100C
Abstract: BUK564-200A
Text: Product specification Philips Semiconductors PowerMOS transistor BUK564-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a
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BUK564-200A
OT404
BUK564-200A
100C
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PDF
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BUK541
Abstract: BUK541-100A BUK541-100B
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK541-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack
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BUK541-100A/B
BUK541
-100B
-SOT186
OT186;
BUK541-100A
BUK541-100B
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PDF
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK655-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. FREDFET with fast recovery
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BUK655-500B
T0220AB
BUK655-500B
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PDF
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LD25C
Abstract: GS12-16
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface
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BUK565-200A
LD25C
GS12-16
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE m DbE J> 86D 01798 D Lb53T31 0Dm03L. 3 T - 31 ^ 6 * BLX91A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe
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Lb53T31
0Dm03L.
BLX91A
D01404S
7Z68928
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PDF
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BLX93A
Abstract: No abstract text available
Text: PHILIR-S INTERNATIONAL MIE D 7110flEb GGSTÖM? 3 BIPHIN BLX93A MAINTENANCE TYPE ' -r- 3 3 - 0 7 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C w ith a supply voltage up to 28 V . The transistor is resistance stabilized and is guaranteed to withstand severe
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7110flEb
BLX93A
711002b
002705b
T-33-07
BLX93A
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PDF
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BCV61
Abstract: BCV61A BCV61B BCV61C BCV62
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BCV61 NPN general purpose double transistor Product specification Supersedes data of 1997 Jun 16 1999 Apr 08 Philips Semiconductors Product specification NPN general purpose double transistor FEATURES BCV61 PINNING
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M3D071
BCV61
OT143B
BCV62.
SCA63
115002/00/03/pp8
BCV61
BCV61A
BCV61B
BCV61C
BCV62
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PDF
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Untitled
Abstract: No abstract text available
Text: 5SC D • û23SbOS GGQM'îlS b « S I E G 7 ^ ? - ^ 3 2 N 4033 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 2 N 4 0 3 3 is an epitaxial PNP silicon planar transistor in TO 3 9 case 5 C 3 DIN 41 8 7 3 . The collector is electrically connected to the case. The transistor is particularly intended for
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23SbOS
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BUK856-450IX
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor Protected IGBT GENERAL DESCRIPTION Protected N-channel insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has built-in zener
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BUK856-450IX
T0220AB
BUK856-450IX
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PDF
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transistor marking 551
Abstract: E551 1N MARKING marking code SAL sot-23
Text: KST13/14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T ^ 2 S V Characteristic Symbol Collector-Base Voltage Collactor-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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KST13/14
OT-23
KST13
KST14
100mA
100mA,
100mA
100MHz
transistor marking 551
E551
1N MARKING
marking code SAL sot-23
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance
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PHP5N20E
T0220AB
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PDF
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bi 370 transistor
Abstract: JNI Corporation AA1A4p bi 370 transistor e PA33 nec j
Text: SEC k Compound Transistor A l Î T / \ f Z AA1A4P f&tfc F*9ÜcN P N i 1J 3 > F 5 >•$>;*? Resistors Built-in Type NPN Silicon Epitaxial Transistor Medium Speed Switching ftWm/P A C K A G E ^/FEATUR ES DIMENSIONS Unit : mm o '<47 è I*3/Sï L t V ' ì t o
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CycleS50
SC-43B
bi 370 transistor
JNI Corporation
AA1A4p
bi 370 transistor e
PA33
nec j
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PDF
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors NPN general purpose transistor BC846W; BC847W; BC848W PIN CONFIGURATION FEATURES • S- mini package. n* n1 DESCRIPTION NPN transistor in a plastic SOT323 SC70 package. PINNING - SOT323 PIN Top view DESCRIPTION
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BC846W;
BC847W;
BC848W
OT323
MBC670
BC846AW:
BC846BW:
BC847W:
BC846W
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PDF
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PMBT2369
Abstract: "npn switching transistor" 65 marking sot23 Marking 02 SOT23 marking A1 TRANSISTOR marking code 10 sot23 TR PMBT2369
Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBT2369 NPN switching transistor Product specification Supersedes data of 1999 Apr 27 2004 Jan 22 Philips Semiconductors Product specification NPN switching transistor PMBT2369 FEATURES PINNING • Low current max. 200 mA
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PMBT2369
SCA76
R75/04/pp7
PMBT2369
"npn switching transistor"
65 marking sot23
Marking 02 SOT23
marking A1 TRANSISTOR
marking code 10 sot23
TR PMBT2369
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PDF
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2SC3056
Abstract: No abstract text available
Text: Ç p January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE: 2SC3056, 2SC3056A Silicon High Speed Power Transistor DESCRIPTION The 2SC3056/2SC3056A are silicon NPN planar general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transistor
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2SC3056,
2SC3056A
2SC3056/2SC3056A
2SC3056
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