TRANSISTOR 2SC1980 Search Results

TRANSISTOR 2SC1980 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 2SC1980 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SA0921 Abstract: 2SA921 2SC1980 Text: Transistor 2SA0921 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings (Ta=25˚C)	Original	PDF	2SA0921 2SA921) 2SC1980 2SA0921 2SA921 2SC1980
2SA0921 Abstract: 2SA921 2SC1980 Text: Transistor 2SA0921 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 • Absolute Maximum Ratings 0.7±0.1 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage	Original	PDF	2SA0921 2SA921) 2SC1980 2SA0921 2SA921 2SC1980
2SA921 Abstract: 2SA92 2SC1980 2SC198 Text: Transistor 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings Ta=25˚C Parameter	Original	PDF	2SA921 2SC1980 2SA921 2SA92 2SC1980 2SC198
2SC1980 Abstract: TRANSISTOR 2SC1980 2SA921 Text: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA921 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings Ta=25˚C Parameter	Original	PDF	2SC1980 2SA921 2SC1980 TRANSISTOR 2SC1980 2SA921
2SA0921 Abstract: 2SA921 2SC1980 TRANSISTOR 2sc1980 Text: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA0921 2SA921 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings (Ta=25˚C)	Original	PDF	2SC1980 2SA0921 2SA921) 2SA0921 2SA921 2SC1980 TRANSISTOR 2sc1980
337 transistor Abstract: 2SC1980 2SA921 Gv-80dB Text: Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SA921 Unit: mm 5.0±0.2 4.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. 0.7±0.2 ● • Absolute Maximum Ratings	Original	PDF	2SC1980 2SA921 337 transistor 2SC1980 2SA921 Gv-80dB
Q2N4401 Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog	Original	PDF	RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
transistor 2N3563 Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .	Original	PDF
2SC5936 Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	PDF	XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	PDF	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
STk442-130 Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components	Original	PDF	100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
TRANSISTOR DATASHEET D1555 Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878 Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440	Original	PDF	2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
D1276A Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463	OCR Scan	PDF	2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A

AN3962FB Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202 Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030	OCR Scan	PDF	MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
2SB415 Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362 Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~	OCR Scan	PDF	4000HÂ 2SB415 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362