TRANSISTOR 2SC536 Search Results

TRANSISTOR 2SC536 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 2SC536 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
MJE2955 Abstract: 2N3645 bc557 BC307 BC212 Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu The facturer	OCR Scan	O-92SP O-237 O-220 O-928> iO051 MJE2955 2N3645 bc557 BC307 BC212	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC536 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Amplifier Transistor 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol	Original	2SC536	PDF
2sc536 Abstract: 2SC536 transistor 2sc536 noise figure hFE-200 to-92 npn ST2SC536 Text: ST 2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SC536 150mA 30MHz 2sc536 2SC536 transistor 2sc536 noise figure hFE-200 to-92 npn ST2SC536	PDF
2sc536 Abstract: 2sc536 noise figure 2SC536 transistor transistor 2sC536 Text: ST 2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SC536 150mA 30MHz 2sc536 2sc536 noise figure 2SC536 transistor transistor 2sC536	PDF
2sc536 Abstract: transistor 2sC536 2SC536 transistor st 2SC536 equivalent 2sc536 noise figure 2SC536 C Collector 5v npn TRANSISTOR Text: ST 2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SC536 150mA 30MHz 2sc536 transistor 2sC536 2SC536 transistor st 2SC536 equivalent 2sc536 noise figure 2SC536 C Collector 5v npn TRANSISTOR	PDF
2sc536 noise figure Abstract: 2sc536 2SC536 transistor transistor 2sC536 hFE-200 to-92 npn Text: ST 2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SC536 150mA 30MHz 2sc536 noise figure 2sc536 2SC536 transistor transistor 2sC536 hFE-200 to-92 npn	PDF
2SC536 Abstract: No abstract text available Text: 2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SC536 150mA 30MHz 2SC536	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
2SC5369 Abstract: MICROWAVE TRANSISTOR 20113 nec ic 8582 IC 4008 NEC 9117 Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSION in mm • High f T 2.1±0.1 14 GHz TYP. 1.25±0.1 • High gain 0.2 –0 6 4 5 1 2 3 • 6-pin small mini mold package	Original	2SC5369 2SC5369 MICROWAVE TRANSISTOR 20113 nec ic 8582 IC 4008 NEC 9117	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC536S TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	O-92S 2SC536S 100MHz	PDF
2SC5368 Abstract: No abstract text available Text: TOSHIBA 2SC5368 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5368 Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS ¿3.1 ±0.1 5.8 DC-DC CONVERTER APPLICATIONS ÏHigh Speed : tr = 0.5/^s (Max. , tf=0.3/*s (Max.) (IC = 0.8A)	OCR Scan	2SC5368 100ms 2SC5368	PDF

transistor npn C536 Abstract: No abstract text available Text: 2SC5361 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5361 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs max (IC = 1.2 A) • High breakdown voltage: VCEO = 800 V	Original	2SC5361 2-10S1A transistor npn C536	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC5360 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5360 COLOR TV CHROMA OUTPUT APPLICATIONS • • • High Voltage Small Collector Output Capacitance High Transition Frequency VCEO=300V Cob = 5.0pF Typ. fT =100MHz (Typ.) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SC5360 100MHz	PDF
transistor npn C536 Abstract: C5361 2SC5361 Text: 2SC5361 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5361 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs max (IC = 1.2 A) • High breakdown voltage: VCEO = 800 V	Original	2SC5361 transistor npn C536 C5361 2SC5361	PDF
2SC5361 Abstract: No abstract text available Text: TOSHIBA 2SC5361 2SC5361 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS 10.3MAX. DC-DC CONVERTER APPLICATIONS • • • 1.32 Excellent Switching Times : tf = 0.5 /us Max. (l£ = 1.2 A)	OCR Scan	2SC5361	PDF
Untitled Abstract: No abstract text available Text: 2SC5361 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5361 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tf = 0.5 µs max (IC = 1.2 A) • High breakdown voltage: VCEO = 800 V	Original	2SC5361	PDF
transistor npn C536 Abstract: 2SC5361 Text: 2SC5361 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5361 High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • Unit: mm Excellent switching times: tf = 0.5 s max (IC = 1.2 A) • High breakdown voltage: VCEO = 800 V	Original	2SC5361 transistor npn C536 2SC5361	PDF
2sc536 Abstract: 2SC536 transistor 2SC536* transistor Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC536 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. COLLECTOR 400 mW (Tamb=25℃) Collector current ICM: 100 mA Collector-base voltage V(BR)CBO:	Original	2SC536 2sc536 2SC536 transistor 2SC536* transistor	PDF
C536 NPN TRANSISTOR Abstract: C536 transistor transistor C536 A608 transistor pnp transistor A608 2SA608N 2SC536NF-NPA-AT transistor npn C536 Text: Ordering number : EN6324B 2SA608N/2SC536N Bipolar Transistor http://onsemi.com – 50V, (–)150mA, Low VCE(sat) (PNP)NPN Single NPA-WA Applicaitons • Capable of being used in the low frequency to high frequency range Features • Large current capacity and wide ASO	Original	EN6324B 2SA608N/2SC536N 150mA, 2SA608N C536 NPN TRANSISTOR C536 transistor transistor C536 A608 transistor pnp transistor A608 2SA608N 2SC536NF-NPA-AT transistor npn C536	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A 2SC5361 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5361 Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS 10.3MAX DC-DC CONVERTER APPLICATIONS • • • Excellent Switching Times : tf = 0.5 /us Max. (Iq = 1.2 A)	OCR Scan	2SC5361	PDF
c5368 Abstract: transistor npn C536 2SC5368 Text: 2SC5368 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5368 High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High speed: tr = 0.5 µs max , tf = 0.3 µs (max) (IC = 0.8 A) • High breakdown voltage: VCEO = 450 V	Original	2SC5368 c5368 transistor npn C536 2SC5368	PDF

TRANSISTOR 2SC536 Search Results

TRANSISTOR 2SC536 Result Highlights (5)

TRANSISTOR 2SC536 Datasheets Context Search

MN1280

oz960

MJE2955

Untitled

2sc536

2sc536

2sc536

2sc536 noise figure

2SC536

2sb504

2SC5369

y51 h 120c

Untitled

2SC5368

transistor npn C536

Untitled

transistor npn C536

2SC5361

Untitled

transistor npn C536

2sc536

C536 NPN TRANSISTOR

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c5368